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    PNP -NPN SILICON HIGH POWER TRANSISTOR Search Results

    PNP -NPN SILICON HIGH POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    PNP -NPN SILICON HIGH POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PNP Transistors

    Abstract: No abstract text available
    Text: 40362L High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40362L VCEV hFE 35 IC Notes VCEO 70 hFE A .05 COB Polarity PNP ICEV Power Dissipation


    Original     		PDF 40362L 40362L O-205AD/TO-39 07-Sep-2010 PNP Transistors

    40394

    Abstract: PNP Transistors MD14
    Text: 40394 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40394 VCEV 60 hFE 15 IC .15 Notes VCEO 40 hFE A .001 COB Polarity PNP ICEV Power Dissipation


    Original     		PDF 07-Sep-2010 40394 PNP Transistors MD14

    PNP Transistors

    Abstract: TO-205AD 40349
    Text: 40349 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40349 VCEV 160 hFE 30 IC .15 Notes VCEO 140 hFE A .15 COB Polarity NPN ICEV Power Dissipation


    Original     		PDF O-205AD/TO-39 07-Sep-2010 PNP Transistors TO-205AD 40349

    40348

    Abstract: No abstract text available
    Text: 40348 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40348 VCEV 90 hFE 30 IC .30 Notes VCEO 65 hFE A .30 COB Polarity NPN ICEV Power Dissipation


    Original     		PDF O-205AD/TO-39 07-Sep-2010 40348

    DTS-411

    Abstract: DTS411 PNP Transistors
    Text: DTS411 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type DTS411 VCEV 300 hFE 30 IC 1.0 Notes VCEO 300 hFE A 1.0 COB Polarity NPN ICEV 300


    Original     		PDF DTS411 DTS411 O-204AA/TO-3 07-Sep-2010 DTS-411 PNP Transistors

    MJE15034G

    Abstract: No abstract text available
    Text: MJE15034 NPN , MJE15035 (PNP) Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com Complementary silicon plastic power transistors are designed for use as high−frequency drivers in audio amplifiers. 4.0 AMPERES POWER TRANSISTORS


    Original     		PDF MJE15034 MJE15035 O-220, O-220 25plicable MJE15034/D MJE15034G

    NTE281

    Abstract: NTE280 NTE281MCP
    Text: NTE280 NPN & NTE281 (PNP) Silicon Complementary Trasistors Audio Power Amplifier Description: The NTE280 (NPN) and NTE281 (PNP) are silicon complementary transistors in a TO3 type package designed for use in high power, high fidelity audio frequency amplifier applications.


    Original     		PDF NTE280 NTE281 NTE280MP NTE280 NTE281MCP NTE281

    MJE15034G

    Abstract: MJE15035G MJE15034 MJE15035 mje1503x 160-100MS
    Text: MJE15034 NPN, MJE15035 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com Complementary silicon plastic power transistors are designed for use as high−frequency drivers in audio amplifiers.


    Original     		PDF MJE15034 MJE15035 O-220, MJE15034, MJE15035 O-220AB MJE15034/D MJE15034G MJE15035G mje1503x 160-100MS

    nte37

    Abstract: NTE37MCP NTE36
    Text: NTE36 NPN & NTE37 (PNP) Silicon Complementary Transistors AF Power Amplifier, High Current Switch Description: The NTE36 (NPN) and NTE37 (PNP) are silicon complementary transistors in a TO3P type case designed for AF power amplifier and high current switching applications.


    Original     		PDF NTE36 NTE37 10IB1 10IB2 nte37 NTE37MCP NTE36

    NTE2305

    Abstract: No abstract text available
    Text: NTE2305 NPN & NTE2306 (PNP) Silicon Complementary Transistors High Voltage Power Amplifier Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits.


    Original     		PDF NTE2305 NTE2306 NTE2305

    PNP Transistor DPAK

    Abstract: No abstract text available
    Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS


    Original     		PDF MJD200 MJD210 PNP Transistor DPAK

    MJD200RL

    Abstract: 1N5825 MJD200 MJD200G MJD200RLG MJD200T4 MJD210 MSD6100
    Text: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS


    Original     		PDF MJD200 MJD210 MJD200/D MJD200RL 1N5825 MJD200 MJD200G MJD200RLG MJD200T4 MJD210 MSD6100

    250w npn

    Abstract: NPN 250W NTE60 NTE61 NTE61MCP
    Text: NTE60 NPN & NTE61 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.


    Original     		PDF NTE60 NTE61 500mA 500mA, 250w npn NPN 250W NTE60 NTE61 NTE61MCP

    nte175

    Abstract: NTE38
    Text: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high– speed switching and linear amplifier applications for high–voltage operational amplifiers, switching


    Original     		PDF NTE38 NTE175 NTE38: 200mA NTE175: NTE38 875mA nte175

    1N5825

    Abstract: MJD200 MJD210 MSD6100
    Text: ON Semiconductort NPN Complementary Plastic Power Transistors MJD200 PNP MJD210 NPN/PNP Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS . . . designed for low voltage, low–power, high–gain audio amplifier


    Original     		PDF MJD200 MJD210 r14525 MJD200/D 1N5825 MJD200 MJD210 MSD6100

    PNP Transistors

    Abstract: hFE-20
    Text: 2N6575 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 2N6575 VCEV 700 hFE 20 IC 7.0 Notes VCEO 300 hFE A 3.0 COB 220 Industry Type 2N6575


    Original     		PDF 2N6575 2N6575 O-204AA/TO-3 07-Sep-2010 PNP Transistors hFE-20

    PNP Transistors

    Abstract: MJE1320
    Text: MJE1320 High Voltage Silicon Epoxy High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon Epoxy High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type MJE1320 VCEV 1800 hFE 2.5 IC 2 Notes VCEO 900 hFE A 2.0 COB 80 Industry Type


    Original     		PDF MJE1320 MJE1320 O-220AB/TO-220 07-Sep-2010 PNP Transistors

    PNP Transistors

    Abstract: TO206AA
    Text: 2N6432 High Voltage Silicon Low Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon Low Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 2N6432 VCBO 200 hFE 30 IC 20 Industry Type 2N6432 Visa & Mastercard Accepted! Notes


    Original     		PDF 2N6432 2N6432 O-206AA/TO-18 07-Sep-2010 PNP Transistors TO206AA

    PNP Transistors

    Abstract: "PNP Transistors"
    Text: 2N5320 High Voltage Silicon Low Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon Low Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 2N5320 VCBO 100 hFE 30 IC 500 Industry Type 2N5320 Visa & Mastercard Accepted! Notes


    Original     		PDF 2N5320 2N5320 O-205AD/TO-39 07-Sep-2010 PNP Transistors "PNP Transistors"

    NTE30

    Abstract: NTE29
    Text: NTE29 NPN & NTE30 (PNP) Silicon Complementary Transistors High Power, High Current Switch Description: The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed for use in high power amplifier and switching circuit applications.


    Original     		PDF NTE29 NTE30 NTE30 NTE29

    NTE29

    Abstract: NTE30 0584C
    Text: NTE29 NPN & NTE30 (PNP) Silicon Complementary Transistors High Power, High Current Switch Description: The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed for use in high power amplifier and switching circuit applications.


    Original     		PDF NTE29 NTE30 NTE29 NTE30 0584C

    tip122 tip127 audio amp

    Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power


    Original     		PDF MJ3281A MJ1302A MJ3281A* MJ1302A* 204AA TIP73B TIP74 TIP74A TIP74B TIP75 tip122 tip127 audio amp BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100

    Untitled

    Abstract: No abstract text available
    Text: MJD200 NPN , MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS, 12.5 WATTS


    Original     		PDF MJD200 MJD210 AEC-Q101 MJD200/D

    NTE87

    Abstract: NTE88 NTE88MCP NTE88M
    Text: NTE87 NPN & NTE88 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE87 (NPN) and NTE88 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. These


    Original     		PDF NTE87 NTE88 NTE87 NTE88 NTE88MCP NTE88M