BAT41
Abstract: LL41
Text: BAT41 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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BAT41
DO-35
100uA
100OC
200mA
300uS
BAT41
LL41
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BAT46 sod80
Abstract: BAT46 C 704 diode MINI-MELF DIODE green CATHODE DIODE WITH SOD CASE
Text: L L 46 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.
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DO-35
BAT46.
OD-80)
100uA
300us,
250mA
BAT46 sod80
BAT46
C 704 diode
MINI-MELF DIODE green CATHODE
DIODE WITH SOD CASE
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Untitled
Abstract: No abstract text available
Text: BAT41 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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BAT41
DO-35
100uA
100OC
200mA
300uS
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Untitled
Abstract: No abstract text available
Text: BAT86 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAT86
BAS86.
DO-35
D-74025
03-Feb-04
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Untitled
Abstract: No abstract text available
Text: BAT86 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAT86
BAS86.
DO-35
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: BAT86 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAT86
BAS86.
DO-35
D-74025
05-Apr-04
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Untitled
Abstract: No abstract text available
Text: BAT86 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAT86
BAS86.
DO-35
D-74025
31-Mar-04
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Diode BAT41
Abstract: BAT41 200MA diode SOD-80 IF1001 MINI-MELF DIODE green CATHODE
Text: L L 41 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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DO-35
BAT41.
OD-80)
100uA/300uS
300us
100OC
200mA
Diode BAT41
BAT41
200MA diode SOD-80
IF1001
MINI-MELF DIODE green CATHODE
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bat48 sod-80
Abstract: BAT48 200MA diode SOD-80 MINI-MELF DIODE green CATHODE
Text: L L 48 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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DO-35
BAT48.
OD-80)
100uA
300us,
200mA
500mA
bat48 sod-80
BAT48
200MA diode SOD-80
MINI-MELF DIODE green CATHODE
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES
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WBFBP-06C
FBAS70TW
WBFBP-06C
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Untitled
Abstract: No abstract text available
Text: L L 46 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.
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DO-35
BAT46.
OD-80C)
100uA
300us,
250mA
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transistor k43
Abstract: FBAS40TW marking k43 diode
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES
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WBFBP-06C
FBAS40TW
WBFBP-06C
transistor k43
FBAS40TW
marking k43 diode
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K73 Package
Abstract: FBAS70TW
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES
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WBFBP-06C
FBAS70TW
WBFBP-06C
K73 Package
FBAS70TW
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES
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WBFBP-06C
FBAS40TW
WBFBP-06C
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Untitled
Abstract: No abstract text available
Text: BAT41 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive
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BAT41
AEC-Q101
DO-35
TR/10K
50K/box
TAP/10K
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAS86
DO-35
BAT86.
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: LL46 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive
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DO-35
BAT46
OD-123
BAT46W-V
AEC-Q101
OD-80
GS18/10K
10K/box
GS08/2
2002/95/EC.
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Untitled
Abstract: No abstract text available
Text: BAT41 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive
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BAT41
AEC-Q101
DO-35
TR/10K
50K/box
TAP/10K
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAS86
DO-35
BAT86.
AEC-Q101
2002/95/EC
2002/96/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAS86
DO-35
BAT86.
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
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BAS86
Abstract: BAT86 DO-204AH
Text: BAT86 Vishay Semiconductors formerly General Semiconductor Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic
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BAT86
BAS86.
DO-204AH
DO-35
100mA
13-May-02
BAS86
BAT86
DO-204AH
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MINI-MELF DIODE markings
Abstract: No abstract text available
Text: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAS86
DO-35
BAT86.
AEC-Q101
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
MINI-MELF DIODE markings
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BAS85
Abstract: BAT85
Text: BAS85 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. This diode is also available in the DO-35 case with type
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BAS85
DO-35
BAT85.
OD-80)
300us
100mA
BAS85
BAT85
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BAT85
Abstract: No abstract text available
Text: BAT85 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges This diode is also available in the MiniMELF case with type
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BAT85
BAS85.
DO-35
300us,
100mA
BAT85
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