Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1263 PN type Photo Diode LA0225CV For Optical Disk Blue-purple Laser Diode monitor Overview LA0225CV is a photo diode for optical disk blue-purple laser diode monitor. Functions • The blue-purple sensitive PN type photo diode • Photo diode opening size: 1.0mm
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ENA1263
LA0225CV
LA0225CV
A1263-4/4
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laser diode 405nm
Abstract: "Photo Diode" a1263 LA0225CV 405nm diode 71608 blue Laser-Diode 405nm laser diode la0225
Text: Ordering number : ENA1263 PN type Photo Diode LA0225CV For Optical Disk Blue-purple Laser Diode monitor Overview LA0225CV is a photo diode for optical disk blue-purple laser diode monitor. Functions • The blue-purple sensitive PN type photo diode • Photo diode opening size: 1.0mm
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ENA1263
LA0225CV
LA0225CV
A1263-4/4
laser diode 405nm
"Photo Diode"
a1263
405nm diode
71608
blue Laser-Diode
405nm laser diode
la0225
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transistor a1001
Abstract: 4 PC blue Laser-Diode la0225 405nm laser
Text: Ordering number : ENA1001A PN type Photo Diode LA0225CS For Optical Disk Blue-purple Laser Diode monitors Overview LA0225CS is a photo diode for optical disk blue-purple laser diode monitors. Functions • The blue-purple sensitive PN type photo diode • Photo diode opening size: 1.0mm
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ENA1001A
LA0225CS
LA0225CS
A1001-4/4
transistor a1001
4 PC
blue Laser-Diode
la0225
405nm laser
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1001A PN type Photo Diode LA0225CS For Optical Disk Blue-purple Laser Diode monitors Overview LA0225CS is a photo diode for optical disk blue-purple laser diode monitors. Functions • The blue-purple sensitive PN type photo diode • Photo diode opening size: 1.0mm
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ENA1001A
LA0225CS
LA0225CS
A1001-4/4
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PDF
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405nm laser
Abstract: No abstract text available
Text: Ordering number : ENA0828A PN type Photo Diode LA0224CS For Optical Disk Blue-purple Laser Diode monitors Overview LA0224CS is a photo diode for optical disk blue-purple laser diode monitors. Functions • The blue-purple sensitive PN type photo diode • Photo diode opening size: 1.0mm
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ENA0828A
LA0224CS
LA0224CS
A0828-4/4
405nm laser
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0828 PN type Photo Diode LA0224CS For Optical Disk Blue-purple Laser Diode monitors Overview LA0224CS is a photo diode for optical disk blue-purple laser diode monitors. Functions • The blue-purple sensitive PN type photo diode • Photo diode opening size: 1.0mm
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ENA0828
LA0224CS
LA0224CS
A0828-4/4
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN*A1001 PN type Photo Diode LA0225CS For Optical Disk Blue-purple Laser Diode monitors Overview LA0225CS is a photo diode for optical disk blue-purple laser diode monitors. Functions • The blue-purple sensitive PN type photo diode • Photo diode opening size: 1.0mm
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A1001
LA0225CS
LA0225CS
A1001-4/4
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PDF
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Untitled
Abstract: No abstract text available
Text: O rdering num ber: EN 5100 No.5100 /I _ FP108 SA iYO, TR : PN P Epitaxial Planar Silicon T ransistor SBD : Schottky B arrier Diode DC/DC Converter Applications F e a tu re s •Composite type with a PN P transistor and a Schottky b arrier diode contained in one packge,
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OCR Scan
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FP108
FP108
2SB1121
SB10-015CP,
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PDF
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Untitled
Abstract: No abstract text available
Text: Optointerrupter Specifications H22A4, H22A5, H22A6 Optointerrupter G a A s Infrared Emitting Diode Module with 1mm Aperture N PN Silicon Phototransistor The H22A Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon phototransistor in a
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OCR Scan
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H22A4,
H22A5,
H22A6
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PDF
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MCA231
Abstract: MCA230 MCA255
Text: E SOLID STATE Optoelectronic Specifications T -4/-S5 Photon Coupled Isolator MCA230, MCA231, MCA255 GaAs Infrared Emitting Diode & N PN Silicon Darlington Connected Phototransistor The GE Solid State MCA series consists of a gallium arsenide infrared emitting diode coupled with a silicon photo-darlington
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OCR Scan
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T-Hl-85
MCA230,
MCA231,
MCA255
E51868
300ftsec,
300Hz)
MCA231
MCA230
MCA255
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infrared r
Abstract: No abstract text available
Text: Optointerrupter Specifications H23A1, H23A2 Matched Emitter-Detector Pair G a A s Infrared Emitting Diode and N PN Silicon Phototransistor T h e H23A1 is a matched emitter-detector pair which consists o f a gallium arsenide infrared em itting diode and a silicon
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OCR Scan
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H23A1,
H23A2
H23A1
infrared r
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PDF
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Untitled
Abstract: No abstract text available
Text: BAT86 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAT86
BAS86.
DO-35
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: BAT86 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAT86
BAS86.
DO-35
D-74025
05-Apr-04
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PDF
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Untitled
Abstract: No abstract text available
Text: BAT86 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAT86
BAS86.
DO-35
D-74025
03-Feb-04
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAS86
DO-35
BAT86.
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: LL46 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive
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DO-35
BAT46
OD-123
BAT46W-V
AEC-Q101
OD-80
GS18/10K
10K/box
GS08/2
2002/95/EC.
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PDF
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BAT86
Abstract: No abstract text available
Text: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAS86
DO-35
BAT86.
AEC-Q101
2002/95/EC
2002/96/EC
11-Mar-11
BAT86
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Untitled
Abstract: No abstract text available
Text: BAT41 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive
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BAT41
AEC-Q101
DO-35
TR/10K
50K/box
TAP/10K
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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MINI-MELF DIODE markings
Abstract: No abstract text available
Text: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAS86
DO-35
BAT86.
AEC-Q101
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
MINI-MELF DIODE markings
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PDF
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Untitled
Abstract: No abstract text available
Text: BAT41 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive
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BAT41
AEC-Q101
DO-35
TR/10K
50K/box
TAP/10K
2002/95/EC.
2002/95/EC
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAS86
DO-35
BAT86.
AEC-Q101
2002/95/EC
2002/96/EC
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAS86
DO-35
BAT86.
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
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marking 02 sod
Abstract: SD103AW SD103AW-CA2-R SD103AW-CC2-R SD103AWL-CA2-R S4 DIODE schottky DIODE marking S4 sod schottky diode s4 SOD-123 marking V diode SOD DIODE marking S4 SOD-123
Text: UNISONIC TECHNOLOGIES CO., LTD SD103AW DIODE SCHOTTKY BARRIER SWITCHING DIODE - FEATURES * Low Forward Voltage Drop * Fast Switching * Negligible Reverse Recovery Time * Low Reverse Capacitance * Designed for Surface Mount Application * PN Junction Guard Ring for Transient and ESD Protection
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SD103AW
OD-123
OD-523
SD103AWL
SD103AW-CA2-R
SD103AWL-CA2-R
SD103AW-CC2-R
SD103AWL-CC2-R
marking 02 sod
SD103AW
SD103AW-CA2-R
SD103AW-CC2-R
SD103AWL-CA2-R
S4 DIODE schottky
DIODE marking S4 sod
schottky diode s4 SOD-123
marking V diode SOD
DIODE marking S4 SOD-123
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BAT85 equivalent
Abstract: BAS85 BAT85 BAT85TR
Text: BAT85 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • This diode is also available in the MiniMELF case
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BAT85
BAS85.
DO-35
BAT85-TR
BAT85-TAP
D-74025
31-Mar-04
BAT85 equivalent
BAS85
BAT85
BAT85TR
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