Untitled
Abstract: No abstract text available
Text: PKB3001U Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)160m Absolute Max. Power Diss. (W)4.5¥ Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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PKB3001U
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Untitled
Abstract: No abstract text available
Text: I ObE D N AMER PHILIPS/DISCRETE • DQ15D7^ 4 ■ MAINTENANCE TYPE PKB3001U (for new design use PTB32001X J V _ T 33 -os MICROW AVE POW ER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.
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DQ15D7^
PKB3001U
PTB32001X)
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PKB3001U
Abstract: PTB32001X
Text: N AMER PHILIPS/DISCRETE ObE D • fab53131 G01507cl 4 ■ MAINTENANCE TYPE PKB3001U for new design use PT632001X T > 3 3 -O S r * < „ MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.
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PTB32001X)
PKB3001U
PKB3001U
PTB32001X
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FET BFW10
Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI
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BA220
BA221
BA223
BA281
BA314
BA315
BA316
BA317
BA318
BA423
FET BFW10
KP101A
FET BFW11
BDX38
KPZ20G
CQY58A
BFW10 FET
RPW100
B0943
OF FET BFW11
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