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    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61LV256 32K x 8 LOW VOLTAGE CMOS STATIC RAM April 2004 FEATURES • High-speed access times: - 8, 10, 12, 15 ns • Automatic power-down when chip is deselected • CMOS low power operation - 345 mW max. operating - 7 mW (max.) CMOS standby


    Original     		PDF IS61LV256 IS61LV256 768-word PK13197T28

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61C256AL 32K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION DECEMBER 2005 DESCRIPTION The ISSI IS61C256AL is a very high-speed, low power, FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW typical CMOS standby


    Original     		PDF IS61C256AL IS61C256AL PK13197T28

    IS62LV256AL-20T

    Abstract: IS62LV256AL-20TL IS62LV256AL-45T IS62LV256AL-45TL IS65LV256AL IS62LV256AL IS62LV256AL-20J IS62LV256AL-20JL
    Text: IS65LV256AL IS62LV256AL ISSI 32K x 8 LOW VOLTAGE CMOS STATIC RAM OCTOBER 2006 FEATURES • High-speed access time: 20, 45 ns • Automatic power-down when chip is deselected • CMOS low power operation — 17 µW typical CMOS standby — 50 mW (typical) operating


    Original     		PDF IS65LV256AL IS62LV256AL IS62/65LV256AL 768-word IS62LV256AL-20T IS62LV256AL-20TL IS62LV256AL-45T IS62LV256AL-45TL IS65LV256AL IS62LV256AL IS62LV256AL-20J IS62LV256AL-20JL

    IS61LV256

    Abstract: IS61LV256-10J IS61LV256-10T IS61LV256-12J IS61LV256-12T IS61LV256-8J IS61LV256-8T IS61LV256-12TLI IS61LV256-15JL is61lv25615jl
    Text: ISSI IS61LV256 32K x 8 LOW VOLTAGE CMOS STATIC RAM June 2005 FEATURES • High-speed access times: - 8, 10, 12, 15 ns • Automatic power-down when chip is deselected • CMOS low power operation - 345 mW max. operating - 7 mW (max.) CMOS standby • TTL compatible interface levels


    Original     		PDF IS61LV256 IS61LV256 768-word PK13197T28 IS61LV256-10J IS61LV256-10T IS61LV256-12J IS61LV256-12T IS61LV256-8J IS61LV256-8T IS61LV256-12TLI IS61LV256-15JL is61lv25615jl

    IS62WV12816ALL

    Abstract: IS62WV12816BLL
    Text: IS62WV12816ALL IS62WV12816BLL ISSI 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEBRUARY 2003 FEATURES DESCRIPTION • High-speed access time: 45ns, 55ns, 70ns The ISSI IS62WV12816ALL/ IS62WV12816BLL are highspeed, 2M bit static RAMs organized as 128K words by 16


    Original     		PDF IS62WV12816ALL IS62WV12816BLL IS62WV12816ALL/ IS62WV12816BLL 25BSC 207BSC 75BSC 148BSC IS62WV12816ALL

    IS61C64AL

    Abstract: 61C64AL IS61C64AL-10JLI IS61C64AL-10JI IS61C64AL-10TI IS61C64AL-10TLI is61c64al10jli
    Text: ISSI IS61C64AL 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES OCTOBER 2006 DESCRIPTION The ISSI IS61C64AL is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSI's • High-speed access time: 10 ns • CMOS low power operation


    Original     		PDF IS61C64AL IS61C64AL 8192-word PK13197T28 61C64AL IS61C64AL-10JLI IS61C64AL-10JI IS61C64AL-10TI IS61C64AL-10TLI is61c64al10jli

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS65C256AL IS62C256AL 32K x 8 LOW POWER CMOS STATIC RAM OCTOBER 2006 FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW typical • Low standby power — 150 µW (typical) CMOS standby — 15 mW (typical) operating • Fully static operation: no clock or refresh


    Original     		PDF IS65C256AL IS62C256AL IS62C256AL/IS65C256AL

    Untitled

    Abstract: No abstract text available
    Text: IS65LV256AL IS62LV256AL ISSI 32K x 8 LOW VOLTAGE CMOS STATIC RAM PRELIMINARY INFORMATION SEPTEMBER 2005 FEATURES • High-speed access time: 20, 45 ns • Automatic power-down when chip is deselected • CMOS low power operation — 17 µW typical CMOS standby


    Original     		PDF IS65LV256AL IS62LV256AL IS62/65LV256AL 768-word

    ISSI

    Abstract: No abstract text available
    Text: 2 ISSI PACKAGING INFORMATION 300-mil Plastic SOJ Package Code: J N E1 E 1 SEATING PLANE D B e Sym. b A A2 C A1 MILLIMETERS INCHES Min. Typ. Max. Min. Typ. Max. E2 Notes: 1. Controlling dimension: inches, unless otherwise specified. 2. BSC = Basic lead spacing between centers.


    Original     		PDF 300-mil PK13197T28 ISSI

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS61LV256AL 32K x 8 LOW VOLTAGE CMOS STATIC RAM PRELIMINARY INFORMATION DECEMBER 2005 FEATURES • High-speed access times: — 10 ns • Automatic power-down when chip is deselected • CMOS low power operation — 60 µW typical CMOS standby — 65 mW (typical) operating


    Original     		PDF IS61LV256AL IS61LV256AL 768-word PK13197T28

    IS61C64AL

    Abstract: IS61C64AL-10JI IS61C64AL-10JLI IS61C64AL-10TI IS61C64AL-10TLI
    Text: ISSI IS61C64AL 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES MARCH 2006 DESCRIPTION The ISSI IS61C64AL is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSI's • High-speed access time: 10 ns • CMOS low power operation


    Original     		PDF IS61C64AL IS61C64AL 8192-word PK13197T28 IS61C64AL-10JI IS61C64AL-10JLI IS61C64AL-10TI IS61C64AL-10TLI

    IS61LV256AL

    Abstract: IS61LV256AL-10J IS61LV256AL-10JI IS61LV256AL-10JL IS61LV256AL-10JLI IS61LV256AL-10T IS61LV256AL-10TI IS61LV256AL-10TL IS61LV256AL-10TLI
    Text: ISSI IS61LV256AL 32K x 8 LOW VOLTAGE CMOS STATIC RAM OCTOBER 2006 FEATURES • High-speed access times: — 10 ns • Automatic power-down when chip is deselected • CMOS low power operation — 60 µW typical CMOS standby — 65 mW (typical) operating


    Original     		PDF IS61LV256AL IS61LV256AL 768-word PK13197T28 IS61LV256AL-10J IS61LV256AL-10JI IS61LV256AL-10JL IS61LV256AL-10JLI IS61LV256AL-10T IS61LV256AL-10TI IS61LV256AL-10TL IS61LV256AL-10TLI

    IS62C256AL-45ULI

    Abstract: IS62C256AL IS62C256AL-25TI IS62C256AL-25UI IS62C256AL-45T IS62C256AL-45TL IS62C256AL-45U IS62C256AL-45UL IS65C256AL
    Text: ISSI IS65C256AL IS62C256AL 32K x 8 LOW POWER CMOS STATIC RAM Preliminary Information June 2005 FEATURES • Access time: 25 ns, 45 ns • Low active power: 200 mW typical • Low standby power — 150 µW (typical) CMOS standby — 15 mW (typical) operating


    Original     		PDF IS65C256AL IS62C256AL IS62C256AL/IS65C256AL IS62C256AL-45ULI IS62C256AL IS62C256AL-25TI IS62C256AL-25UI IS62C256AL-45T IS62C256AL-45TL IS62C256AL-45U IS62C256AL-45UL IS65C256AL

    IS65WV12816ALL

    Abstract: IS65WV12816BLL 55BA IS65WV12816BLL-55BA3
    Text: IS65WV12816ALL IS65WV12816BLL ISSI 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM PRELIMINARY INFORMATION FEBRUARY 2003 FEATURES • High-speed access time: 55ns, 70ns Option A2: –40 to +105oC • CMOS low power operation: Option A3: –40 to +125oC


    Original     		PDF IS65WV12816ALL IS65WV12816BLL 105oC 125oC IS65WV12816ALL/ IS65WV12816BLL PK13197T2 IS65WV12816ALL 55BA IS65WV12816BLL-55BA3

    330-MIL

    Abstract: IS62LV256AL IS62LV256AL-20J IS62LV256AL-20JL IS62LV256AL-20T IS62LV256AL-20TL IS62LV256AL-45T IS62LV256AL-45TL IS65LV256AL
    Text: IS65LV256AL IS62LV256AL ISSI 32K x 8 LOW VOLTAGE CMOS STATIC RAM MARCH 2006 FEATURES • High-speed access time: 20, 45 ns • Automatic power-down when chip is deselected • CMOS low power operation — 17 µW typical CMOS standby — 50 mW (typical) operating


    Original     		PDF IS65LV256AL IS62LV256AL IS62/65LV256AL 768-word 330-MIL IS62LV256AL IS62LV256AL-20J IS62LV256AL-20JL IS62LV256AL-20T IS62LV256AL-20TL IS62LV256AL-45T IS62LV256AL-45TL IS65LV256AL

    Untitled

    Abstract: No abstract text available
    Text: ISSI' IS 4 1 L V 1 6 2 5 6 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE ADVANCE INFORMATION SEPTEMBER 1998 DESCRIPTION FEATURES Extended Data-Out (EDO) Page Mode access cycle LVTTL compatible inputs and outputs Single +3.3V ± 10% power supply 5V I/O tolerant


    OCR Scan     		PDF 40-pin 16-bit IS41LV16256 within27 PK13197T2 0044Q4

    is61m256

    Abstract: is61m256-15n ISSI is61c256AH - 15J IS61C256AH IS61C256AH-15JI
    Text: IS61C256AH IS61M256 ISSI 32K x 8 HIGH-SPEED CMOS STATIC RAM MARCH 1998 FEATURES DESCRIPTION • High-speed access time: 8,10,12,15, 20, 25 ns The IS61C256AH and IS61M256 are very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabri­ cated using


    OCR Scan     		PDF IS61C256AH IS61M256 PK13197T28 TGG44G4 is61m256-15n ISSI is61c256AH - 15J IS61C256AH-15JI

    Untitled

    Abstract: No abstract text available
    Text: m IS6 2 LV1 2 8 1 6 L 1 2 8 K x 1 6 C M O S S T A T IC a d v SeceEm b e rRi 997 ION R A M FEATURES • High-speed access time: 70, 100, and 120 ns • CMOS low power operation — 120 mW typical operating — 6 fiW (typical) CMOS standby • TTL compatible interface levels


    OCR Scan     		PDF 44-pin 52-bit PK13197T2 0044Q4

    N1111

    Abstract: No abstract text available
    Text: ISSI 32,768 x 8 LOW VOLTAGE CMOS EPROM a d v a n c e f in f o r m a t io n JANUARY 1997 FEATURES • • • • Single 3.3V power supply Fast access time: 90 ns JEDEC-approved pinout Low power consumption — 100 nA max standby current — 25 mA (max) active current at 5 MHz


    OCR Scan     		PDF 28-pin 32-pin ISSIIS27LV256 256K-bitCMOS 32K-word IS27C256 IS27LV256 PK13197T28 N1111

    Untitled

    Abstract: No abstract text available
    Text: 64K x 16 HIGH-SPEED ULTRA-LOW POWER CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES ADVAN^ LF1°9^ ATI0N DESCRIPTION • H igh-speed access tim e: 15, 20, 35, and 45 ns • CM O S low pow er operation — 40 mW typical operating — 90 \i\N (typical) standby • T T L com patible interface levels


    OCR Scan     		PDF 44-pin IS62LV6416LL 576-bit PK13197K 10Q4404

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS 61C 3216 JANUARY 1998 32K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 10, 12,15, and 20 ns The IS 6 1 C 3 2 1 6 is a h ig h -s p e e d , 5 1 2 K s ta tic R A M o rg a n iz e d a s 3 2 ,7 6 8 w o rd s b y 16 b its. It is fa b ric a te d u sin g


    OCR Scan     		PDF K13197J28 00QG574

    Untitled

    Abstract: No abstract text available
    Text: IS 4 2 S 1 6 1 0 0 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM ISSI ADVANCE INFORMATION SEPTEMBER 1998 DESCRIPTION FEATURES Clock frequency: 100 MHz Fully synchronous; all signals referenced to a positive clock edge Two banks can be operated simultaneously and


    OCR Scan     		PDF 16-MBIT) IS42S16100 288-w 16-bit 50-Pin Programm83 PK13197T2 T004404

    25F041

    Abstract: 25F021 D61D5
    Text: IS25F011A IS25F021A IS25F041A 1M, 2M, and 4M-bit Serial Flash Memories with 4-pin SPI Interface Features Flash Storage for Resource-Limited Systems 4-pin SPI Serial Interface - Ideal for portable/mobile and ^controller-based applications that store voice, text, and data


    OCR Scan     		PDF IS25F011A IS25F021A IS25F041A 264-byte 10K/100K 16MHz PK13197T28 25F041 25F021 D61D5

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS6 1 C12816 128K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation The IS S IIS61C12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated


    OCR Scan     		PDF C12816 IIS61C12816 152-bit PK13197K