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    PJ 50 DIODE DATASHEET Search Results

    PJ 50 DIODE DATASHEET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    PJ 50 DIODE DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    di292

    Abstract: CMOS spice model ci470 CI573 pj 26 diode i2931 di640 ci547 RI57 W1-300
    Text: Spice Models for HOTLink spect to ground. Pin VGND should be connected to InputBuff Operation Guide system ground. Overview Pin A is the modeled input pin. The TTLinput buffĆ This memo responds to customer requests for a er is valid for all of the TTL inputs on the


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    PDF CY7B923/933. CY7B933. di292 CMOS spice model ci470 CI573 pj 26 diode i2931 di640 ci547 RI57 W1-300

    di292

    Abstract: pj 26 diode MJ-05 ci3022 ci470 SCM30 ci573 CMOS spice model di2910 RI57
    Text: Spice Models InputBuff Operation Guide How to Use InputBuff Overview Pin VPWR should be connected to the system positive supply and be between 4.5 and 5.5 volts with respect to ground. Pin VGND should be connected to system ground. This memo responds to customer requests for a SPICE model for the HOTLink TTL and ECL input buffers. The requested uses of the output model include:


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    pj 59

    Abstract: PJ216 pj 26 diode PJ 75 PJ 67 PJ 74 PJ-25 ci3015 pj 84 pj 50 diode
    Text: fax id: 5113 Spice Models InputBuff Operation Guide How to Use InputBuff Overview Pin VPWR should be connected to the system positive supply and be between 4.5 and 5.5 volts with respect to ground. Pin VGND should be connected to system ground. This memo responds to customer requests for a SPICE model for the HOTLink TTL and ECL input buffers. The requested uses of the output model include:


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    strh40p10

    Abstract: STRH40P10HYG MIL-STD-750E STRH40P10HY1 STRH40P10H
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2


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    PDF STRH40P10 O-254AA SC06140p strh40p10 STRH40P10HYG MIL-STD-750E STRH40P10HY1 STRH40P10H

    Untitled

    Abstract: No abstract text available
    Text: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested 1 2 • Hermetic package 3 • 100 krad TID • SEE radiation hardened TO-257AA


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    PDF STRH12P10 O-257AA DocID022337

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened


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    PDF STRH40P10 O-254AA SC06140p STRH40P10HY1any DocID18354

    STRH12P10GYG

    Abstract: No abstract text available
    Text: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested • Hermetic package • 100 krad TID • SEE radiation hardened TO-257AA Applications


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    PDF STRH12P10 O-257AA DocID022337 STRH12P10GYG

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened


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    PDF STRH40P10 O-254AA SC06140p DocID18354

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened


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    PDF STRH40P10 O-254AA SC06140p DocID18354

    Untitled

    Abstract: No abstract text available
    Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened


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    PDF STRH40P10 O-254AA SC06140p DocID18354

    am-008

    Abstract: MIL-STD-750E STRH100N6H
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA


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    PDF STRH100N6 O-254AA STRH100N6HY1 STRH100N6HYG DocID18353 am-008 MIL-STD-750E STRH100N6H

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA


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    PDF STRH100N6 O-254AA STRH100N6HY1 DocID18353

    Untitled

    Abstract: No abstract text available
    Text: STRH100N6 Rad-Hard N-channel, 60 V, 40 A Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 60 V 40 A 12 mΩ 134.4 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID • SEE radiation hardened TO-254AA


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    PDF STRH100N6 O-254AA STRH100N6HY1 DocID18353

    Step-Up/Down

    Abstract: pj 89 diode XP162A12A6PR XC9302A502 CR54 U2FWJ44N XC9301 XC9302 XP161A1265PR diode pj 70
    Text: XC9301/XC9302 Series ETR0601_001c PWM,PWM/PFM Switching Step-Up & Down DC/DC Converter Controller ICs ☆Green Operation Compatible •GENERAL DESCRIPTION The XC9301/XC9302 series are step-up/down DC/DC converter controller ICs with fast, low ON resistance drivers built-in. A


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    PDF XC9301/XC9302 ETR0601 180kHz 300kHz. XC9302 Step-Up/Down pj 89 diode XP162A12A6PR XC9302A502 CR54 U2FWJ44N XC9301 XP161A1265PR diode pj 70

    RAD SMD MARKING CODE

    Abstract: smd diode marking code TO3
    Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications


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    PDF STRH40N6 STRH40N6S1 DocID18351 RAD SMD MARKING CODE smd diode marking code TO3

    Untitled

    Abstract: No abstract text available
    Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications


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    PDF STRH40N6 STRH40N6S1 STRH40N6SG

    Untitled

    Abstract: No abstract text available
    Text: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications


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    PDF STRH40N6 STRH40N6S1

    DLP-2232MSPF

    Abstract: 2232MSPF
    Text: DLP2232MSPF LEAD FREE USB / MICROCONTROLLER MODULE The DLP-2232MSPF combines the same USB interface used in the DLP-2232H and the DLP-1232H modules with a Texas Instruments microcontroller with internal FRAM to form a rapid development tool. The MSP430FR5739 microcontroller is preprogrammed with basic functionality for accessing the


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    PDF DLP2232MSPF DLP-2232MSPF DLP-2232H DLP-1232H MSP430FR5739 12-pin MSP-FET430UIF 16-bit 10-bit 2232MSPF

    I2C dma applications msp430

    Abstract: MSP430FR5969 MSP430FR5949IRHA 5E002 SLAU367
    Text: ECCN 5E002 TSPA - Technology / Software Publicly Available MSP430FR59xx MSP430FR58xx www.ti.com SLAS704 – OCTOBER 2012 MIXED SIGNAL MICROCONTROLLER FEATURES • • Embedded Microcontroller – 16-Bit RISC Architecture up to 16‑‑MHz Clock – Wide Supply Voltage Range 1.8 V to 3.6 V


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    PDF 5E002 MSP430FR59xx MSP430FR58xx SLAS704 16-Bit 16MHz I2C dma applications msp430 MSP430FR5969 MSP430FR5949IRHA SLAU367

    SLAU320

    Abstract: SLAU367 MSP430FR5949 MSP430FR5969IRGZ MSP430FR5869 SLAS704 MSP430FR5847IRHA MSP430FR5969 MSP430FR5949IRHA 09C0H
    Text: ECCN 5E002 TSPA - Technology / Software Publicly Available MSP430FR59xx MSP430FR58xx www.ti.com SLAS704 – OCTOBER 2012 MIXED SIGNAL MICROCONTROLLER FEATURES • • Embedded Microcontroller – 16-Bit RISC Architecture up to 16‑‑MHz Clock – Wide Supply Voltage Range 1.8 V to 3.6 V


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    PDF 5E002 MSP430FR59xx MSP430FR58xx SLAS704 16-Bit 16MHz SLAU320 SLAU367 MSP430FR5949 MSP430FR5969IRGZ MSP430FR5869 SLAS704 MSP430FR5847IRHA MSP430FR5969 MSP430FR5949IRHA 09C0H

    MSP430FR5949IRHA

    Abstract: SLAU320 MSP430FR5949 SLAU367 MSPTS430RGZ48C MSP430FR5847 MSP430FR5969IRGZ PJ7 diode msp430 uart
    Text: ECCN 5E002 TSPA - Technology / Software Publicly Available MSP430FR59xx MSP430FR58xx www.ti.com SLAS704 – OCTOBER 2012 MIXED SIGNAL MICROCONTROLLER FEATURES • • Embedded Microcontroller – 16-Bit RISC Architecture up to 16‑‑MHz Clock – Wide Supply Voltage Range 1.8 V to 3.6 V


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    PDF 5E002 MSP430FR59xx MSP430FR58xx SLAS704 16-Bit 16MHz MSP430FR5949IRHA SLAU320 MSP430FR5949 SLAU367 MSPTS430RGZ48C MSP430FR5847 MSP430FR5969IRGZ PJ7 diode msp430 uart

    MSP430FR5849IRHA

    Abstract: No abstract text available
    Text: ECCN 5E002 TSPA - Technology / Software Publicly Available MSP430FR59xx MSP430FR58xx www.ti.com SLAS704 – OCTOBER 2012 MIXED SIGNAL MICROCONTROLLER FEATURES • • Embedded Microcontroller – 16-Bit RISC Architecture up to 16 MHz Clock – Wide Supply Voltage Range 1.8 V to 3.6 V


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    PDF 5E002 MSP430FR59xx MSP430FR58xx SLAS704 16-Bit MSP430FR5849IRHA

    pj 72 diode

    Abstract: pj 49 diode pj 44 diode ic 7pin dip PWM Converter pj 89 diode 9v 200 ohm relay P248L VP0808 vp1550 pj 85 lv
    Text: Chapter S: Product Selector Guides Chapter Product Selector Guides 1. Hotswap Controller ICs/lnrush Current Limiters/Circuit Breaker IC s. 248 2. LED Driver IC s .


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    PDF VP1550 VP2106 VP2110 VP2206 VP2450 VP3203 TC2320 -200V pj 72 diode pj 49 diode pj 44 diode ic 7pin dip PWM Converter pj 89 diode 9v 200 ohm relay P248L VP0808 pj 85 lv

    pj 89 diode

    Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
    Text: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct


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    PDF OT-23 TN2101K1 TN2106K1 TN2124K1 TP2106K1 VN2110K1 VP2110K1 -10ack HV9111 HV9112 pj 89 diode HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode