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    Untitled

    Abstract: No abstract text available
    Text: November 1996 Revision 1.1 DATA SHEET EDC1UV641 1/4 -(60/70)(J/T)G-S 8MByte (1M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC1UV641(1/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 1M words by 64 bits, in a 168-pins, dual-in-line (DIMM) memory modules.


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    PDF EDC1UV641 168-pins, MB81V1 1Mx16 MP-DRAMM-DS-20391-11/96

    PJ 43 gs 1m

    Abstract: No abstract text available
    Text: July 1997 Revision 1.0 data sheet EDC1UV641 1/4 B-60(J/T)G-S 8MByte (1M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC1UV641(1/4)B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 1M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module.


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    PDF EDC1UV641 168-pin, MB81V1 165B-60 1Mx16 PJ 43 gs 1m

    Untitled

    Abstract: No abstract text available
    Text: September 1996 Revision 1.0 DATA SHEET EDC1UV641 1/4 -(60/70)(J/T)G-S 8MByte (1M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC1UV641(1/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 1M words by 64 bits, in a 168-pins, dual-in-line (DIMM) memory modules.


    Original
    PDF EDC1UV641 168-pins, MB81V1 1Mx16 MP-DRAMM-DS-20391-9/96

    2MX16

    Abstract: No abstract text available
    Text: July 1997 Revision 1.0 data sheet EDC2UV7282B- 60/70 (J/T)G-S 16MByte (2M x 72) CMOS EDO DRAM Module - 3.3V (ECC) General Description The EDC2UV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 72 bits, in a 168-pin, dual-in-line (DIMM) memory module with ECC.


    Original
    PDF EDC2UV7282B- 16MByte EDC2UV7282B-60 16-megabyte 168-pin, MB81V17805B-60 2MX16

    edo dram 50ns 72-pin simm

    Abstract: Fujitsu DRAM
    Text: July 1997 Revision 1.0 data sheet EDC4UV6482B-60 J/T G-S 32MByte (4M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC4UV6482B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module.


    Original
    PDF EDC4UV6482B-60 32MByte 32-megabyte 168-pin, MB81V17805B-60 edo dram 50ns 72-pin simm Fujitsu DRAM

    Untitled

    Abstract: No abstract text available
    Text: July 1997 Revision 1.0 data sheet EDC2UV6482B-60 J/T G-S 16MByte (2M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC2UV6482B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module.


    Original
    PDF EDC2UV6482B-60 16MByte 16-megabyte 168-pin, MB81V17805B-60

    EDC2UV641

    Abstract: No abstract text available
    Text: September 1996 Revision 1.0 DATA SHEET EDC2UV641 1/4 -(60/70)(J/T)G-S 16MByte (2M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC2UV641(1/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 168-pins, dual-in-line (DIMM) memory modules.


    Original
    PDF EDC2UV641 16MByte 16-megabyte 168-pins, MB81V1 1Mx16 16MByom MP-DRAMM-DS-20390-9/96

    mark edo

    Abstract: 74ABT16244
    Text: July 1997 Revision 1.0 data sheet EDC4BV7282B-60 J/T G-S 32MByte (4M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered General Description The EDC4BV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 72 bits, in a 168-pins, dual-in-line (DIMM) memory module with ECC.


    Original
    PDF EDC4BV7282B-60 32MByte 32-megabyte 168-pins, MB81V17805B-60 74ABT16244 mark edo

    pj 72 diode

    Abstract: 4Mx8 dram simm
    Text: July 1997 Revision 1.0 data sheet EDC8UV724 2/4 B-60(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module - 3.3V (ECC) General Description The EDC8UV724(2/4)B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module organized as 8M words by 72 bits, in a 168-pin, dual-in-line (DIMM) memory module with ECC.


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    PDF EDC8UV724 64MByte 64-megabyte 168-pin, MB81V1 405B-60 pj 72 diode 4Mx8 dram simm

    74LVT16244

    Abstract: fujitsu 42 pds
    Text: July 1997 Revision 1.0 data sheet EDC8BV724 2/4 B-60(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered General Description The EDC8BV724(2/4)B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module organized as 8M words by 72 bits, in a 168-pins, dual-in-line (DIMM) memory module with ECC.


    Original
    PDF EDC8BV724 64MByte 64-megabyte 168-pins, MB81V1 405B-60 74LVT16244 fujitsu 42 pds

    1Mx4 EDO RAM

    Abstract: edo dram 50ns 72-pin simm edo dram 72-pin simm 4 m 2MX16
    Text: July 1997 Revision 1.0 data sheet EDC4UV7282B-60 J/T G-S 32MByte (4M x 72) CMOS EDO DRAM Module - 3.3V (ECC) General Description The EDC4UV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 72 bits, in a 168-pin, dual-in-line (DIMM) memory module with ECC.


    Original
    PDF EDC4UV7282B-60 32MByte 32-megabyte 168-pin, MB81V17805B-60 1Mx4 EDO RAM edo dram 50ns 72-pin simm edo dram 72-pin simm 4 m 2MX16

    Untitled

    Abstract: No abstract text available
    Text: cP IITSU July 1997 Revision 1.0 data sheet EDC1UV641 1/4 B-60(J/T)G-S 8MByte (1Mx64) CMOS EDO DRAM Module - 3.3V General Description The EDC1UV641 (1/4)B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module orga­ nized as 1M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module.


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    PDF EDC1UV641( 1Mx64) EDC1UV641 168-pin, MB81V1 165B-60

    Untitled

    Abstract: No abstract text available
    Text: November 1996 Revision 1.1 FUJITSU D A T A S H E E T - EDC1UV641 1/4 -(60/70)(J/T)G-S 8MByte (1Mx 64) CMOS EDO DRAM Module -3.3V General Description The EDC1UV641(1/4)-(60/70)(J/T)G -S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module


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    PDF EDC1UV641 168-pins, MB81V1 1Mx16 168-pin 12QforTSOP

    alu 74381

    Abstract: 74381 alu alu 74382 74381 74382 CI 74382 CI 74381 bt 1690 4435bs ZR37381-65
    Text: Z 'iiR A N ADVANCE INFORMATION _ZR37381 CASCADABLE 16-BIT ARITHMETIC/LOGIC UNIT FEATURES • ■ ■ ■ High-speed 16-bit, 8-function ALU Superset combination of four 74381 /382-type 4-bit ALUs Input and output registers for pipelined operation can be


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    PDF ZR37381 16-BIT 16-bit, /382-type L4C381 DS37381-0489-5K alu 74381 74381 alu alu 74382 74381 74382 CI 74382 CI 74381 bt 1690 4435bs ZR37381-65

    C2U SOT-89

    Abstract: No abstract text available
    Text: September 1996 Revision 1.0 FUJITSU DATA SH EET - EDC2UV641 1 /4 -(60/70)(J/T)G-S 16MByte (2Mx 64) CMOS EDO DRAM Module -3.3V General Description The EDC2UV641 (1/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module


    OCR Scan
    PDF EDC2UV641 16MByte 16-megabyte 168-pins, MB81V1 1Mx16 C2U SOT-89

    Untitled

    Abstract: No abstract text available
    Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC4B V7282B-60 J/T G-S 32MByte (4M x 72) CMOS EDO DRAM Module -3.3 V (ECC), Buffered General Description The EDC4BV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized


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    PDF V7282B-60 32MByte EDC4BV7282B-60 32-megabyte 168-pins, V17805B-60 74ABT16244 72-pin 144-pin 168-pin

    Untitled

    Abstract: No abstract text available
    Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC2UV7282B- 60/70 (J/T)G-S 16MByte (2M x 72) CMOS EDO DRAM Module -3.3V (ECC) General Description The EDC2UV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized


    OCR Scan
    PDF EDC2UV7282B- 16MByte EDC2UV7282B-60 16-megabyte 168-pin, MB81V17805B-60 72-pin 144-pin 168-pin 200-pin

    Untitled

    Abstract: No abstract text available
    Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC2UV6482B-60 J/T G-S 16MByte (2M x 64) CMOS EDO DRAM Module -3.3V General Description The EDC2UV6482B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module.


    OCR Scan
    PDF EDC2UV6482B-60 16MByte 16-megabyte 168-pin, MB81V17805B-60 16MByte 72-pin 144-pin 168-pin

    Untitled

    Abstract: No abstract text available
    Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC4UV6482B-60 J/T G-S 32MByte (4Mx 64) CMOS EDO DRAM Module -3.3V General Description The EDC4UV6482B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 64 bits, in a 168-pin, dual-in-line (DIMM) memory module.


    OCR Scan
    PDF EDC4UV6482B-60 32MByte 32-megabyte 168-pin, MB81V17805B-60 32MByte 72-pin 144-pin 168-pin

    Untitled

    Abstract: No abstract text available
    Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC8UV724 2/4 B-60(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module -3.3 V (ECC) General Description The EDC8UV724(2/4)B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module orga­


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    PDF EDC8UV724 64MByte 64-megabyte 168-pin, MB81V1 405B-60 1Mx16,

    fujitsu power supply

    Abstract: No abstract text available
    Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC8B V724 2I4 B-60(JIT)G-S 64MByte (8M x 72) CMOS EDO DRAM Module -3.3 V (ECC), Buffered General Description The EDC8BV724(2/4)B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module orga­


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    PDF 64MByte EDC8BV724 64-megabyte 168-pins, MB81V1 405B-60 74LVT16244 fujitsu power supply

    Untitled

    Abstract: No abstract text available
    Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC4UV7282B-60 J/T G-S 32MByte (4M x 72) CMOS EDO DRAM Module -3.3V (ECC) General Description The EDC4UV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized


    OCR Scan
    PDF EDC4UV7282B-60 32MByte 32-megabyte 168-pin, MB81V17805B-60 72-pin 144-pin 168-pin 200-pin

    Untitled

    Abstract: No abstract text available
    Text: November 1996 Revision 1.1 D A T A S H E E T FUJITSU - EDC2UV641 1/4 -(60/70)(J/T)G-S 16MByte (2M x64) CMOS EDO DRAM Module - 3.3V General Description The EDC 2UV641(1/4)-(60/70)(J/T)G -S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module


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    PDF EDC2UV641 16MByte 2UV641 16-megabyte 168-pins, MB81V1 1Mx16 128AS* 168-pin 374T75b

    IC 3-8 decoder 74138 pin diagram

    Abstract: binary to gray code conversion using ic 74157 Multiplexer IC 74151 16 bit odd even parity checker using two IC 74180 binary to gray code conversion using ic 74139 7444 series Excess-3-gray code to Decimal decoder full adder using Multiplexer IC 74151 ic 74151 ic 74148 block diagram MSI IC 74138 decoder
    Text: s I SEMICONDUCTOR GROUP 23E D • t?54E40 G00fl535 1 "T-q2-q \ p a rtII CMOS STANDARD CELL LSI MSM91H000 SERIES ¿U S' This M a terial C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r O K I SEMICONDUCTOR GROUP 23E D ■ b72M240 DGGÔ23b G


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    PDF MSM91H000 b72MS40 DQQ023b t-42-41 b724240 IC 3-8 decoder 74138 pin diagram binary to gray code conversion using ic 74157 Multiplexer IC 74151 16 bit odd even parity checker using two IC 74180 binary to gray code conversion using ic 74139 7444 series Excess-3-gray code to Decimal decoder full adder using Multiplexer IC 74151 ic 74151 ic 74148 block diagram MSI IC 74138 decoder