4562
Abstract: SHD116168 SHD116168B
Text: SHD116168 SHD116168B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4562, REV. C HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Very Low Forward Voltage Drop
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SHD116168
SHD116168B
4562
SHD116168
SHD116168B
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SCP-6291
Abstract: Diode Arrays Diode Array
Text: SCP-6291 TECHNICAL DATA PART NUMBER: SCP-6291, Rev - Diode Array Devices Are Serialized Built And Screened To Space Level Quality Space Quality Level Conformance Testing Is Performed On Each Lot Two Diodes In Series Per Leg For Redundancy MAX. RATINGS / ELECTRICAL CHARACTERISTICS FOR EACH DIODE PAIR
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SCP-6291
SCP-6291,
100oC
SCP-6291
Diode Arrays
Diode Array
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Untitled
Abstract: No abstract text available
Text: SHD116168 SHD116168B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4562, REV. D HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Very Low Forward Voltage Drop
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SHD116168
SHD116168B
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Untitled
Abstract: No abstract text available
Text: SHD116268 SHD116268B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 864, REV. C HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
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SHD116268
SHD116268B
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Untitled
Abstract: No abstract text available
Text: SHD116168 SHD116168B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4562, REV. D HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Very Low Forward Voltage Drop
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SHD116168
SHD116168B
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1n5819 melf
Abstract: 1N5819-1 JANTX 1N5819UR-1 MELF DL41 1N5819 1N5819-1 1.1N5819 DO-213AB Schottky Barrier Diode
Text: tSENSITRON 1N5819-1 1N5819UR-1 SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. A HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise
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1N5819-1
1N5819UR-1
1n5819 melf
1N5819-1 JANTX
1N5819UR-1
MELF DL41 1N5819
1N5819-1
1.1N5819
DO-213AB
Schottky Barrier Diode
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4562
Abstract: SHD116168 SHD116168B
Text: SHD116168 SHD116168B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4562, REV. B HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
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SHD116168
SHD116168B
4562
SHD116168
SHD116168B
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SHD116268
Abstract: SHD116268B
Text: SHD116268 SHD116268B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 864, REV. B HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
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SHD116268
SHD116268B
SHD116268
SHD116268B
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1N5819-1 JAN
Abstract: 1N5819UR1 JANTX 1N5819-1 JANTX 1N5819UR-1 1N5819UR1 JANTXV
Text: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. o All ratings are at TA = 25 C unless otherwise specified.
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1N5819-1
1N5819UR-1
1N5819-1 JAN
1N5819UR1 JANTX
1N5819-1 JANTX
1N5819UR1 JANTXV
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1.1N5819
Abstract: 1n5819 melf 1N5819UR-1 d 2038 datasheets diode 1n5819 1N5819-1 SS5819UR-1 DO-213AB SS5819-1 PIV RATING 14 V DIODE
Text: SS5819-1 SS5819UR-1 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2038, REV. - HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.
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SS5819-1
SS5819UR-1
1.1N5819
1n5819 melf
1N5819UR-1
d 2038
datasheets diode 1n5819
1N5819-1
SS5819UR-1
DO-213AB
SS5819-1
PIV RATING 14 V DIODE
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normal diode
Abstract: 1400V Diode "normal Diode" slow diode MZ0409W snap-off diode
Text: AN5370 Application Note AN5370 Using Avalanche Diodes Without Sharing Capacitors Application Note Replaces July 2000, version AN5370-1.1 AN5370-1.2 July 2002 1. INTRODUCTION The important property of the avalanche diode is its ability to safely handle, without damage, relatively large reverse powers
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AN5370
AN5370
AN5370-1
normal diode
1400V Diode
"normal Diode"
slow diode
MZ0409W
snap-off diode
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5819-1
Abstract: SS5819UR-1 1N5819UR-1 1N5819-1 DO-213AB SS5819-1
Text: SS5819-1 SS5819UR-1 SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2038, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.
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SS5819-1
SS5819UR-1
5819-1
SS5819UR-1
1N5819UR-1
1N5819-1
DO-213AB
SS5819-1
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1N5819UR-1
Abstract: 1n5819 melf 1N5819-1 DO-213AB 1N5819UR1
Text: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. o All ratings are at TA = 25 C unless otherwise specified.
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1N5819-1
1N5819UR-1
1N5819UR-1
1n5819 melf
1N5819-1
DO-213AB
1N5819UR1
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1N5819 sensitron
Abstract: 1N5819UR-1 1N5819-1 DO-213AB
Text: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. C HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.
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1N5819-1
1N5819UR-1
1N5819 sensitron
1N5819UR-1
1N5819-1
DO-213AB
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Untitled
Abstract: No abstract text available
Text: SHD117012 P/N SHD117012(P/N)A SHD117012(P/N)B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4564, REV. – HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Add Suffix "S" to Part Number for S-100 Screening. Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
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SHD117012
S-100
45-VOLT,
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Untitled
Abstract: No abstract text available
Text: 1N5819-1 and 1N5819UR-1 Standard HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 193, REV. C.2 AVAILABLE AS 1N5819-1, 1N5819UR-1 JAN EQUIVALENT: SJ5819-1/SJ5819UR-1* SV5819-1/SV5819UR-1* SX5819-1/SX5819UR-1*
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1N5819-1
1N5819UR-1
1N5819-1,
SJ5819-1/SJ5819UR-1*
SV5819-1/SV5819UR-1*
SX5819-1/SX5819UR-1*
SS5819-1/SS5819UR-1*
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fri07
Abstract: 1n3842 1N3299 1N3836 4e20-3 1N3844 4E20-8 4E50-M-28 1N3300 1N3300A
Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes 25°C @ Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current
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UF4001
UF4002
UF4003
UF4004
UF4005
UF4006
UF4007
fri07
1n3842
1N3299
1N3836
4e20-3
1N3844
4E20-8
4E50-M-28
1N3300
1N3300A
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4E20-8
Abstract: 1N3299 1N3300 1N3300A 1N3303 1N3303A 1N3304 1N3489 1N3489A 1N3490
Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25°C Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current
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UF4001
UF4002
UF4003
UF4004
UF4005
UF4006
UF4007
4E20-8
1N3299
1N3300
1N3300A
1N3303
1N3303A
1N3304
1N3489
1N3489A
1N3490
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1N3842
Abstract: 4E20-28 4e20-3 4E30-8 1N3490 1N3299 1N3839 1N3300 1N3300A 1N3303
Text: FOUR LAYER DIODES Parameters for All 4 -La ye r Diodes @ 25°C Switching current 125pA Is Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 nA @ 0.6 Vs Reverse leakage current
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125pA
UF4001
UF4002
UF4003
UF4004
UF4005
UF4006
UF4007
1N3842
4E20-28
4e20-3
4E30-8
1N3490
1N3299
1N3839
1N3300
1N3300A
1N3303
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4E50M-28
Abstract: FR103 1N3772
Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25 C 125pA Is Switching current Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current
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125pA
UF4001
UF4002
UF4003
UF4004
UF4005
UF4006
UF4007
4E50M-28
FR103
1N3772
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mosfet 803
Abstract: No abstract text available
Text: t43E D • b7flS073 D0Q0774 S « O M N I OM9011SF OM9013SF OM9012SF OM9014SF OMNIREL CORP HERMETIC MOSFET POWER MODULE 250 Watt Power Module, 100/500 Volt;* N-Channel MOSFETs With Power Schottkys, High Speed Rectifiers And Zener Gate Clamps FEATURES • Dual Inline 16 Pin Hermetic Power Package
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b7flS073
D0Q0774
OM9011SF
OM9013SF
OM9012SF
OM9014SF
OM9014SF
300/asec,
QM9011SF
mosfet 803
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m9012
Abstract: SF 119 D OM9011SF OM9012SF OM9013SF OM9014SF ltue
Text: 143E D • OM9011SF OM9013SF OM9012SF OM9014SF b7a=1073 0000774 S « O M N I OMNIREL CORP HERM ETIC M O SFET PO W ER MODULE 250 Watt Power Module, 100/500 Volt;* N-Channel M O SF E T s With Power Schottkys, High Speed Rectifiers And Zener Gate Clam ps FEATU RES
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D0Q0774
OM9011SF
OM9013SF
OM9012SF
OM9014SF
300/asec,
OM9Q11SF-
OM9Q14SF
m9012
SF 119 D
OM9014SF
ltue
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UGB-10
Abstract: unitrode uge-5 UGB10 UGF25 UGD-10
Text: MICROSEMI CORP/ WATERTOWN W T ' ì b a GG1E301 7^2 M U N I T UGB, UGD, UGE, UGF„SERIES SQE RECTIFIER ASSEMBLIES 7 ^3-3 'V ST High Voltage Doorbell Modules Standard and Fast Recovery FEATURES • Current Ratings: to 10A • PIV: 2.5 kV to 10kV • Recovery Times: to 500ns
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GG1E301
500ns
600KV
580PLEASANT
MA02172
UGB-10
unitrode uge-5
UGB10
UGF25
UGD-10
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71005
Abstract: 100 Volt mosfet schematic circuit OM9005SD OM9006SD
Text: 43E D OM9005SD OM9006SD [=70^073 Q0DD772 1 • OMNI HERMETIC MOSFET POWER MODULE OMNIREL CORP 160 Watt Power Module, 100/60 Volt, N-Channel MOSFETs With Power Schottky«^ DiodèàAnd High Speed R ectifiers FEATURES • • • • • • • Dual Inline 16 Pin Hermetic Power Package
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00DD772
OM9005SD
OM9006SD
Z-31-Z7
71005
100 Volt mosfet schematic circuit
OM9006SD
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