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    PIV RATING 14 V DIODE Search Results

    PIV RATING 14 V DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    PIV RATING 14 V DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4562

    Abstract: SHD116168 SHD116168B
    Text: SHD116168 SHD116168B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4562, REV. C HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Very Low Forward Voltage Drop


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    SHD116168 SHD116168B 4562 SHD116168 SHD116168B PDF

    SCP-6291

    Abstract: Diode Arrays Diode Array
    Text: SCP-6291 TECHNICAL DATA PART NUMBER: SCP-6291, Rev - Diode Array Devices Are Serialized Built And Screened To Space Level Quality Space Quality Level Conformance Testing Is Performed On Each Lot Two Diodes In Series Per Leg For Redundancy MAX. RATINGS / ELECTRICAL CHARACTERISTICS FOR EACH DIODE PAIR


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    SCP-6291 SCP-6291, 100oC SCP-6291 Diode Arrays Diode Array PDF

    Untitled

    Abstract: No abstract text available
    Text: SHD116168 SHD116168B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4562, REV. D HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Very Low Forward Voltage Drop


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    SHD116168 SHD116168B PDF

    Untitled

    Abstract: No abstract text available
    Text: SHD116268 SHD116268B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 864, REV. C HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode


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    SHD116268 SHD116268B PDF

    Untitled

    Abstract: No abstract text available
    Text: SHD116168 SHD116168B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4562, REV. D HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Very Low Forward Voltage Drop


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    SHD116168 SHD116168B PDF

    1n5819 melf

    Abstract: 1N5819-1 JANTX 1N5819UR-1 MELF DL41 1N5819 1N5819-1 1.1N5819 DO-213AB Schottky Barrier Diode
    Text: tSENSITRON 1N5819-1 1N5819UR-1 SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. A HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise


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    1N5819-1 1N5819UR-1 1n5819 melf 1N5819-1 JANTX 1N5819UR-1 MELF DL41 1N5819 1N5819-1 1.1N5819 DO-213AB Schottky Barrier Diode PDF

    4562

    Abstract: SHD116168 SHD116168B
    Text: SHD116168 SHD116168B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4562, REV. B HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode


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    SHD116168 SHD116168B 4562 SHD116168 SHD116168B PDF

    SHD116268

    Abstract: SHD116268B
    Text: SHD116268 SHD116268B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 864, REV. B HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode


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    SHD116268 SHD116268B SHD116268 SHD116268B PDF

    1N5819-1 JAN

    Abstract: 1N5819UR1 JANTX 1N5819-1 JANTX 1N5819UR-1 1N5819UR1 JANTXV
    Text: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. o All ratings are at TA = 25 C unless otherwise specified.


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    1N5819-1 1N5819UR-1 1N5819-1 JAN 1N5819UR1 JANTX 1N5819-1 JANTX 1N5819UR1 JANTXV PDF

    1.1N5819

    Abstract: 1n5819 melf 1N5819UR-1 d 2038 datasheets diode 1n5819 1N5819-1 SS5819UR-1 DO-213AB SS5819-1 PIV RATING 14 V DIODE
    Text: SS5819-1 SS5819UR-1 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2038, REV. - HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.


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    SS5819-1 SS5819UR-1 1.1N5819 1n5819 melf 1N5819UR-1 d 2038 datasheets diode 1n5819 1N5819-1 SS5819UR-1 DO-213AB SS5819-1 PIV RATING 14 V DIODE PDF

    normal diode

    Abstract: 1400V Diode "normal Diode" slow diode MZ0409W snap-off diode
    Text: AN5370 Application Note AN5370 Using Avalanche Diodes Without Sharing Capacitors Application Note Replaces July 2000, version AN5370-1.1 AN5370-1.2 July 2002 1. INTRODUCTION The important property of the avalanche diode is its ability to safely handle, without damage, relatively large reverse powers


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    AN5370 AN5370 AN5370-1 normal diode 1400V Diode "normal Diode" slow diode MZ0409W snap-off diode PDF

    5819-1

    Abstract: SS5819UR-1 1N5819UR-1 1N5819-1 DO-213AB SS5819-1
    Text: SS5819-1 SS5819UR-1 SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2038, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.


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    SS5819-1 SS5819UR-1 5819-1 SS5819UR-1 1N5819UR-1 1N5819-1 DO-213AB SS5819-1 PDF

    1N5819UR-1

    Abstract: 1n5819 melf 1N5819-1 DO-213AB 1N5819UR1
    Text: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. B HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. o All ratings are at TA = 25 C unless otherwise specified.


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    1N5819-1 1N5819UR-1 1N5819UR-1 1n5819 melf 1N5819-1 DO-213AB 1N5819UR1 PDF

    1N5819 sensitron

    Abstract: 1N5819UR-1 1N5819-1 DO-213AB
    Text: 1N5819-1 1N5819UR-1 SENSITRON SEMICONDUCTOR JAN JANTX JANTXV TECHNICAL DATA DATA SHEET 193, REV. C HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE DESCRIPTION: A 45 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT SCHOTTKY BARRIER DIODE. All ratings are at TA = 25oC unless otherwise specified.


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    1N5819-1 1N5819UR-1 1N5819 sensitron 1N5819UR-1 1N5819-1 DO-213AB PDF

    Untitled

    Abstract: No abstract text available
    Text: SHD117012 P/N SHD117012(P/N)A SHD117012(P/N)B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4564, REV. – HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Drop Add Suffix "S" to Part Number for S-100 Screening. Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode


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    SHD117012 S-100 45-VOLT, PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5819-1 and 1N5819UR-1 Standard HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 193, REV. C.2 AVAILABLE AS 1N5819-1, 1N5819UR-1 JAN EQUIVALENT: SJ5819-1/SJ5819UR-1* SV5819-1/SV5819UR-1* SX5819-1/SX5819UR-1*


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    1N5819-1 1N5819UR-1 1N5819-1, SJ5819-1/SJ5819UR-1* SV5819-1/SV5819UR-1* SX5819-1/SX5819UR-1* SS5819-1/SS5819UR-1* PDF

    fri07

    Abstract: 1n3842 1N3299 1N3836 4e20-3 1N3844 4E20-8 4E50-M-28 1N3300 1N3300A
    Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes 25°C @ Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current


    OCR Scan
    UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 fri07 1n3842 1N3299 1N3836 4e20-3 1N3844 4E20-8 4E50-M-28 1N3300 1N3300A PDF

    4E20-8

    Abstract: 1N3299 1N3300 1N3300A 1N3303 1N3303A 1N3304 1N3489 1N3489A 1N3490
    Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25°C Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current


    OCR Scan
    UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 4E20-8 1N3299 1N3300 1N3300A 1N3303 1N3303A 1N3304 1N3489 1N3489A 1N3490 PDF

    1N3842

    Abstract: 4E20-28 4e20-3 4E30-8 1N3490 1N3299 1N3839 1N3300 1N3300A 1N3303
    Text: FOUR LAYER DIODES Parameters for All 4 -La ye r Diodes @ 25°C Switching current 125pA Is Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 nA @ 0.6 Vs Reverse leakage current


    OCR Scan
    125pA UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 1N3842 4E20-28 4e20-3 4E30-8 1N3490 1N3299 1N3839 1N3300 1N3300A 1N3303 PDF

    4E50M-28

    Abstract: FR103 1N3772
    Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25 C 125pA Is Switching current Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current


    OCR Scan
    125pA UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 4E50M-28 FR103 1N3772 PDF

    mosfet 803

    Abstract: No abstract text available
    Text: t43E D • b7flS073 D0Q0774 S « O M N I OM9011SF OM9013SF OM9012SF OM9014SF OMNIREL CORP HERMETIC MOSFET POWER MODULE 250 Watt Power Module, 100/500 Volt;* N-Channel MOSFETs With Power Schottkys, High Speed Rectifiers And Zener Gate Clamps FEATURES • Dual Inline 16 Pin Hermetic Power Package


    OCR Scan
    b7flS073 D0Q0774 OM9011SF OM9013SF OM9012SF OM9014SF OM9014SF 300/asec, QM9011SF mosfet 803 PDF

    m9012

    Abstract: SF 119 D OM9011SF OM9012SF OM9013SF OM9014SF ltue
    Text: 143E D • OM9011SF OM9013SF OM9012SF OM9014SF b7a=1073 0000774 S « O M N I OMNIREL CORP HERM ETIC M O SFET PO W ER MODULE 250 Watt Power Module, 100/500 Volt;* N-Channel M O SF E T s With Power Schottkys, High Speed Rectifiers And Zener Gate Clam ps FEATU RES


    OCR Scan
    D0Q0774 OM9011SF OM9013SF OM9012SF OM9014SF 300/asec, OM9Q11SF- OM9Q14SF m9012 SF 119 D OM9014SF ltue PDF

    UGB-10

    Abstract: unitrode uge-5 UGB10 UGF25 UGD-10
    Text: MICROSEMI CORP/ WATERTOWN W T ' ì b a GG1E301 7^2 M U N I T UGB, UGD, UGE, UGF„SERIES SQE RECTIFIER ASSEMBLIES 7 ^3-3 'V ST High Voltage Doorbell Modules Standard and Fast Recovery FEATURES • Current Ratings: to 10A • PIV: 2.5 kV to 10kV • Recovery Times: to 500ns


    OCR Scan
    GG1E301 500ns 600KV 580PLEASANT MA02172 UGB-10 unitrode uge-5 UGB10 UGF25 UGD-10 PDF

    71005

    Abstract: 100 Volt mosfet schematic circuit OM9005SD OM9006SD
    Text: 43E D OM9005SD OM9006SD [=70^073 Q0DD772 1 • OMNI HERMETIC MOSFET POWER MODULE OMNIREL CORP 160 Watt Power Module, 100/60 Volt, N-Channel MOSFETs With Power Schottky«^ DiodèàAnd High Speed R ectifiers FEATURES • • • • • • • Dual Inline 16 Pin Hermetic Power Package


    OCR Scan
    00DD772 OM9005SD OM9006SD Z-31-Z7 71005 100 Volt mosfet schematic circuit OM9006SD PDF