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    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
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    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
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    PINOUT DIAGRAM FOR AM2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    29LV160

    Abstract: Am29LV800 28F160 28F160B3 28F640B3 AP-657 INTEL application notes Intel AP Am29LV0641D 38000-3FFFF
    Text: AP-680 AP-680 APPLICATION NOTE Multi-Source Solution for Intel 28Fxx0B3 Advanced Boot Block and AMD* AM29LVxxxx October 2001 NOTE: This document formerly known as Multi-Source Solution for Intel® 28F160B3 Advanced Boot Block and AMD 29LV160. Order Number: 297876-004


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    AP-680 28Fxx0B3 AM29LVxxxx 28F160B3 29LV160. 28FxxxB3 48-Lead 29LVxxx. 29LV160 Am29LV800 28F160 28F640B3 AP-657 INTEL application notes Intel AP Am29LV0641D 38000-3FFFF PDF

    29LV160

    Abstract: 28F160 28F160B3 28F640B3 AP-657 intel 28f160 Advanced Boot Block Flash 28FxxxB 29lv160 Flash
    Text: AP-680 AP-680 APPLICATION NOTE Multi-Source Solution for Intel 28Fxx0B3 Advanced Boot Block and AMD* AM29LVxxxx October 2001 NOTE: This document formerly known as Multi-Source Solution for Intel® 28F160B3 Advanced Boot Block and AMD 29LV160. Order Number: 297876-005


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    AP-680 28Fxx0B3 AM29LVxxxx 28F160B3 29LV160. 28FxxxB3 48-Lead 29LVxxx 29LV160 28F160 28F640B3 AP-657 intel 28f160 Advanced Boot Block Flash 28FxxxB 29lv160 Flash PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION Am29LV256M 64 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 2.7–3.6 volt read, erase, and program operations


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    Am29LV256M 16-Bit/32 128-word/64-byte 8-word/16-byte PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION Am29F160D 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 5.0 Volt-only, Boot or Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt single power supply operation — Minimizes system-level power requirements ■ High performance


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    Am29F160D 16-Bit) PDF

    L256ML

    Abstract: transistor marking A21 uAM29LV256M L256MH12V amd part marking L256mh LAA064 Product Selector Guide
    Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


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    Am29LV256M 16-Bit/32 128-word/256-byte 8-word/16-byte TS056 LAA064 L256ML transistor marking A21 uAM29LV256M L256MH12V amd part marking L256mh Product Selector Guide PDF

    L640ML12P

    Abstract: 64 fortified bga ei 306 20 64
    Text: ADVANCE INFORMATION Am29LV640MH/L 64 Megabit 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 V for read, erase, and program operations


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    Am29LV640MH/L 16-Bit/8 128-word/256-byte 8-word/16-byte TS056 TSR056 L640ML12P 64 fortified bga ei 306 20 64 PDF

    LAA064

    Abstract: g6 amd
    Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


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    Am29LV256M 16-Bit/32 128-word/256-byte 8-word/16-byte TS056 TSR056 64-byte 256-byte. LAA064 g6 amd PDF

    Am29LV256MH

    Abstract: 64-ball ei 306 20 64
    Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


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    Am29LV256M 16-Bit/32 128-word/256-byte 8-word/16-byte LAA064 Am29LV256MH 64-ball ei 306 20 64 PDF

    Untitled

    Abstract: No abstract text available
    Text: A D V A N C E IN F O R M A T IO N AMDZ1 Am29F160D 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 5.0 Volt-only, Boot or Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt single power supply operation — Minimizes system-level power requirements


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    Am29F160D 16-Bit) AM29F160DT55, AM29F160DB55, AM29F160DU55 PDF

    AM27C49T

    Abstract: No abstract text available
    Text: a Am27C49 65,536-Bit 8192x8 High-Performance CMOS PROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS High-speed (35 ns)/Low-Power (90 mA) CMOS EPROM Technology Direct plug-ln replacement for Bipolar PROMs — JEDEC-approved pinout 5-Volt ±10% power supplies for both Commer­


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    Am27C49 536-Bit 8192x8) 9890A-6 09890-002B AM27C49T PDF

    Amd 27C49

    Abstract: No abstract text available
    Text: Am27C49 65,536-Bit 8192x8 High-Performance CMOS PROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS High-speed (35 ns)/Low-Power (90 mA) CMOS EPROM Technology Direct plug-in replacement for Bipolar PROMs JEDEC-approved pinout S-Volt ±10% power supplies for both Commer­


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    Am27C49 536-Bit 8192x8) 27C49 9890A-6 Amd 27C49 PDF

    IDT49C410

    Abstract: IDT49C402 IDT49C818
    Text: FAST CMOS OCTAL REGISTER W ITH SPC Serial P r o t o c o l C h a n n e l ADVANCE INFORMATION IDT49C818 Inu'-v«1 DESCRIPTION: FEATURES: • High-speed non-inverting 8-bit parallel register for any data path, control path or pipelining application • Pin-out similar to the Am29818 and 54/74S818, but uses an


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    IDT49C818 Am29818 54/74S818, IDT49C818 SS049C418-002 SSQ49C616-003 IDT49C410 IDT71981 IDT49C410 IDT49C402 PDF

    Untitled

    Abstract: No abstract text available
    Text: a A d v a n c e Inform ation Am27C800 8 Megabit 1,048,576 x 8-bit/524,288 x 16-Bit ROM Compatible CMOS EPROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS m • ■ ■ Fast access time -1 2 0 ns Low power consumption - 25 nA typical CMOS standby current


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    Am27C800 8-bit/524 16-Bit) 42-pin 44-pin 5452-005A PDF

    AM29C953

    Abstract: Am29C855 AM29C853
    Text: A m 29C 833/A m 29C 853/A m 29C 855 A m 29C 933/A m 29C 953/A m 29C 955 Am29C833/Am29C853/Am29C855 Am29C933/Am29C953/Am29C955 High-Performance CMOS Parity Bus Transceivers DISTINCTIVE CHARACTERISTICS • • • • High-speed CMOS bidirectional bus transceivers


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    833/A 853/A 933/A 953/A Am29C833/Am29C853/Am29C855 Am29C933/Am29C953/Am29C955 Am29C855 200-mV Am29C900 Am29C833 AM29C953 AM29C853 PDF

    PCB VK 557

    Abstract: AM27C191 AM27C291 PD3024 am27c
    Text: a Am27C191 /Am27C291 16,384-Bit 2048x8 High-Performance CMOS PROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-speed (25 ns)/Low-Power (60 mA) CMOS EPROM Technology • 5-Volt ±10% power supplies for both Commercial and Military • Direct plug-ln replacement for Bipolar PROMs —


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    Am27C191/Am27C291 384-Bit 2048x8) 300-mll Am27C291 600-mil Am27Cl9l Am27C191 /Am27C291 PCB VK 557 PD3024 am27c PDF

    AM27C191

    Abstract: No abstract text available
    Text: Am27C191 /Am27C291 Advanced Micro Devices 16,384-Bit 2048x8 High-Performance CMOS PROM DISTINCTIVE CHARACTERISTICS High-speed (25 ns)/Low-Power (60 mA) CMOS EPROM Technology 5-Volt ±10% power supplies for both Commercial and Military Direct plug-ln replacement for Bipolar PROM* —


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    Am27C191 /Am27C291 384-Bit 2048x8) 300-mll Am27C29l 600-null Am27C19l Am27C191/Am27C291 PDF

    AM26LS32

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors-Signetlcs Linear Products Quad high-speed differential line receivers PIN CONFIGURATION FEATURES • Input voltage range of 15V differential or common mode on AM26LS33; 7V (differential or common mode) on AM26LS32


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    AM26LS32 AM26LS33 RS-422 RS-423 200mV 500mV PDF

    AM27C49

    Abstract: AM27C49T-55
    Text: Am27C49 65,536-Bit 8192x8 High-Performance CMOS PROM Advanced Micro Devices DISTINCTIVE CHARACTERISTICS High-speed (35 ns)/Low-Power (90 mA) CMOS EPROM Technology Direct plug-in replacement for Bipolar PROMs — JEDEC-approved pinout S-Volt ±10% power supplies for both Commer­


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    Am27C49 536-Bit 8192x8) AM27C49T-55 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORM ATION AMD£1 Am29F160D 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 5.0 Volt-only, Boot or Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt single power supply operation ■ — Minimizes system-level power requirem ents ■


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    Am29F160D 16-Bit) 0DB55, AM29F160DU55 AM29F160DT55, AM29F160DB55, AM29F160DT70, AM29F160DB70, AM29F160DU70 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AM D Am29F160D 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 5.0 Volt-only, Boot or Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt single power supply operation ■ — Minimizes system-level power requirem ents ■ High perform ance


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    Am29F160D 16-Bit) AM29F160DT55, AM29F160DB55, AM29F160DU55 AM29F160DT70, AM29F160DB70, PDF

    Untitled

    Abstract: No abstract text available
    Text: AMDB Am29LV102B 2 Megabit 256 K x 8-Bit CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and


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    Am29LV102B 32-Pin TSR032) AM29LV102B-55R AM29LV102B-70 AM29LV102B-90 AM29LV102B-120 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY 14E D | 0ES752fl üa27t.?S Am27C49 =1 Adva^ 65,536-Bit (8192x8 High-Performance CMOS PROM Devices DISTINCTIVE CHARACTERISTICS • • • High-speed (35 ns)/Low-Power (90 mA) CMOS EPROM Technology Direct plug-ln replacement for Bipolar PROMs —


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    0ES752fl Am27C49 536-Bit 8192x8) 9890A-6 025752a PDF

    29c833

    Abstract: 29C933 amd 955
    Text: Am29C833/Am29C853/Am29C855 Am29C933/Am29C953/Am29C955 Am29C833/Am29C853/Am29C855 Am29C933/Am29C953/Am29C955 High-Performance CMOS Parity Bus Transceivers DISTINCTIVE CHARACTERISTICS • • • • High-speed CMOS bidirectional bustransceivers - T-R delay = 6 ns typical


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    Am29C833/Am29C853/Am29C855 Am29C933/Am29C953/Am29C955 Am29C855 200-mV Am29C900 Am29C833 Am29C853 29c833 29C933 amd 955 PDF

    AM29C953

    Abstract: CD3024 PD3024 AM29C833BLA
    Text: Am29C833/Am29C853/Am29C855 Am29C933/Am29C953/Am29C955 Am29C833/Am29C853/Am29C855 Am29C933/Am29C953/Am29C955 High-Performance CMOS Parity Bus Transceivers DISTINCTIVE CHARACTERISTICS • • • • High-speed CMOS bidirectional bustransceivers - T-R delay = 6 ns typical


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    Am29C833/Am29C853/Am29C855 Am29C933/Am29C953/Am29C955 Am29C855 200-mV Am29C900 Am29C833 Am29C853 AIS-WCP-20M-01/88-0 AM29C953 CD3024 PD3024 AM29C833BLA PDF