udt UV100
Abstract: PIN-10D PIN-10AP PIN-6DPI UDT Sensors PSD FIL-3C PIN-040A PIN-HS040 XUV-100C PIN-5DI
Text: INTRODUCTION PACKAGE MECHANICAL SPECIFICATIONS AND PARAMETERS 1. Parameter Definitions: A = Distance from top of chip to top of glass. a = Photodiode Anode. B = Distance from top of glass to bottom of case. c = Photodiode Cathode Note: cathode is common to case in metal package products unless otherwise noted .
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UV-35P
XUV-50C
XUV-100C
RD-100
RD-100A
UV-035DC
UV-100DC
UV-035EC
UV-100EC
UV-005DC
udt UV100
PIN-10D
PIN-10AP
PIN-6DPI
UDT Sensors PSD
FIL-3C
PIN-040A
PIN-HS040
XUV-100C
PIN-5DI
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PIN-10D
Abstract: PIN-5DI PIN-13DI PIN-10DF PIN-10DI PIN10DI OSD100-0A InGaAs APD quadrant OSD5-5T PIN-44DI
Text: Photoconductive Series Planar Diffused Silicon Photodiodes The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications,
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OS-P200
OSD100-0A
OSD100-5TA
PIN-10D
PIN-5DI
PIN-13DI
PIN-10DF
PIN-10DI
PIN10DI
OSD100-0A
InGaAs APD quadrant
OSD5-5T
PIN-44DI
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PIN-125DPL
Abstract: PIN-10DP InGaAs APD quadrant OSD1-5T pin-6dp PIN-10AP PIN-10DPI PIN-13DPI PIN-220DP PIN-25D
Text: Photovoltaic Series Planar Diffused Silicon Photodiodes The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral
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OS-P200
OSD100-0A
OSD100-5TA
PIN-125DPL
PIN-10DP
InGaAs APD quadrant
OSD1-5T
pin-6dp
PIN-10AP
PIN-10DPI
PIN-13DPI
PIN-220DP
PIN-25D
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FIL-UV50
Abstract: FIL-UV100 PIN-10D XUV-005 UV-100 UV-100L PIN-5D PIN-5DPI UV-035DQC PIN-10AP
Text: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the
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diffuFIL-UV100
FIL-UV005
FIL-UV20
FIL-UV50
FIL-UV100
FIL-UV50
FIL-UV100
PIN-10D
XUV-005
UV-100
UV-100L
PIN-5D
PIN-5DPI
UV-035DQC
PIN-10AP
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UDT Pin-6dp
Abstract: UDT UV-005 UDT Pin-6dpI OSD5.8-7Q OSD15-5T OSD5-5T BPX65 amplifier UDT photodiode -5T PIN-020A UDT-455UV
Text: Photops Photodiode-Amplifier Hybrids The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photops™ general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100nm. They have an integrated package ensuring low noise output under a variety of
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1100nm.
drif-013D,
UV-013
15OSD-5-0,
OSD15-0,
OSD15-5T
BPX-65R
BPX-65
UV-001,
UDT Pin-6dp
UDT UV-005
UDT Pin-6dpI
OSD5.8-7Q
OSD15-5T
OSD5-5T
BPX65 amplifier
UDT photodiode -5T
PIN-020A
UDT-455UV
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SPOT-9DMI
Abstract: SPOT-2DMI SC-10D QD7-0 PIN-040A SPOT-4D SPOT-9D OSD15-5T SPOT-2D OSD5-5T
Text: Segmented Photodiodes SPOT Series Position Sensing Detector (PSD) The SPOT Series are common substrate photodetectors segmented into either two (2) or four (4) separate active areas. They are available with either a 0.005" or 0.0004" well defined gap between the adjacent
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350-1100nm.
BPX-65
UV-001,
UV-005,
UV-015
PIN-125DPL
PIN-HR005
PIN-HR008
PIN-HR020
PIN-HR026
SPOT-9DMI
SPOT-2DMI
SC-10D
QD7-0
PIN-040A
SPOT-4D
SPOT-9D
OSD15-5T
SPOT-2D
OSD5-5T
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PIN-10AP
Abstract: PIN-10DP PIN-10D UV-005EQ PIN-5DI BPX65 high sensitive XUV-020 UV-005DC UV-013D UV-013E
Text: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the
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diffuFIL-UV100
FIL-UV005
FIL-UV20
FIL-UV50
FIL-UV100
PIN-10AP
PIN-10DP
PIN-10D
UV-005EQ
PIN-5DI
BPX65 high sensitive
XUV-020
UV-005DC
UV-013D
UV-013E
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PIN-5DI
Abstract: PIN-020A PIN-3CDI UDT Pin-040A PIN-10DI PIN-6DI PIN-13DI FIL-3C diodes 10di 13DI
Text: PHOTOCONDUCTIVE SERIES PLANAR DIFFUSED SILICON PHOTODIODES APPLICATIONS • • • • • • The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications, including such
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laser range finder schematics
Abstract: BPW34 application note "laser range finder" 254 nm uv LED SPOT-9DMI APPLICATION NOTE BpW34 far uv photodiode UDT sensors BPX65 PIN-10AP
Text: TABLE OF CONTENTS Revision 98.3 Index and Selection Guide Photodiode Characteristics and Applications Application Notes and Further Reading Sources Standard Photodiodes, Electro-Optical Specifications and Design Notes Planar Diffused Photodiodes Photoconductive Series
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PIN-10AP
Abstract: PIN-10D osd15-5t OSD5-5T PIN-040A BPX65R PIN-10DI UV-100 PIN-10DP UV-020
Text: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the
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OSD35-LR-A
OSD35-LR-D
PIN-RD07
PIN-RD15
UV-35P
UV-005DC
UV-035DC
UV-100DC
UV-005EC
UV-035EC
PIN-10AP
PIN-10D
osd15-5t
OSD5-5T
PIN-040A
BPX65R
PIN-10DI
UV-100
PIN-10DP
UV-020
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PIN-040A
Abstract: osd15-5t OSD5.8-7Q OSD5-5T PIN-020A PIN-44DI OSD35-7Q SPOT-15-YAG OSD15-0 bpx65r
Text: YAG Series Nd:YAG Optimized Photodetectors The YAG Series of photo detectors are optimized for high response at 1060 nm, the YAG laser light wavelength, and low capacitance, for high speed operation and low noise. These detectors can be used for sensing low light intensities, such as the light reflected from objects illuminated by
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-013D,
UV-013
15OSD-5-0,
OSD15-0,
OSD15-5T
BPX-65R
BPX-65
UV-001,
UV-005,
PIN-040A
osd15-5t
OSD5.8-7Q
OSD5-5T
PIN-020A
PIN-44DI
OSD35-7Q
SPOT-15-YAG
OSD15-0
bpx65r
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FIL-3C
Abstract: fil 3c
Text: Photoconductive Series Planar Diffused Silicon Photodiodes The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications,
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