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    PIN PHOTODIODE INGAAS SENSITIVITY Search Results

    PIN PHOTODIODE INGAAS SENSITIVITY Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet
    CS-DSDMDB50MF-025 Amphenol Cables on Demand Amphenol CS-DSDMDB50MF-025 50-Pin (DB50) Deluxe D-Sub Cable - Copper Shielded - Male / Female 25ft Datasheet

    PIN PHOTODIODE INGAAS SENSITIVITY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G9906-01

    Abstract: KIRD1075E02 SE-171 photodiode InGaAs NEP
    Text: PHOTODIODE InGaAs PIN photodiode G9906-01 Small package InGaAs PIN photodiode for C-L band G9906-01 is an InGaAs PIN photodiode designed to minimize temperature dependence of the photo sensitivity in the C-L band. It has an active area of φ0.3 mm and is housed in a subminiature package making it ideal for use in smaller modules.


    Original     		PDF G9906-01 G9906-01 SE-171 KIRD1075E02 KIRD1075E02 photodiode InGaAs NEP

    opto 2561

    Abstract: 2561 OPTO MXA-256-1 MXA-256-2 photodiode 256 elements PerkinElmer 1700 inGaAs photodiode 1550 array InGaas PIN photodiode, 1550 NEP
    Text: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging


    Original     		PDF MXA-256-1, MXA-256-X opto 2561 2561 OPTO MXA-256-1 MXA-256-2 photodiode 256 elements PerkinElmer 1700 inGaAs photodiode 1550 array InGaas PIN photodiode, 1550 NEP

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED PD1300-35D32-I Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1300-35D32-I is InGaAs PIN-photodiode featuring excellent responsibility and high photocurrent for near infrared. This PIN-photodiode consists of a large chip with


    Original     		PDF PD1300-35D32-I PD1300-35D32-I 15degrees. 35mmition: 1300nm

    InGaas PIN photodiode, 1550 NEP

    Abstract: PerkinElmer 1700 MXA-256-1 MXA-256-2 2561 OPTO photodiode array 1550 nm inGaAs photodiode 1550 array
    Text: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging


    Original     		PDF MXA-256-1, MXA-256-X InGaas PIN photodiode, 1550 NEP PerkinElmer 1700 MXA-256-1 MXA-256-2 2561 OPTO photodiode array 1550 nm inGaAs photodiode 1550 array

    G8370-01

    Abstract: G8370 G8370-02 G8370-03 G8370-05
    Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		PDF G8370 G8370-01 G8370-02 G8370-03 G8370-05 SE-171 KIRD1050E03 G8370-01 G8370-02 G8370-03 G8370-05

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		PDF G8370 G8370-01 G8370-02 G8370-03 G8370-05 SE-171 KIRD1050E04

    photodiode InGaAs NEP

    Abstract: G8370 G8370-01 G8370-02 G8370-03 G8370-05
    Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		PDF G8370 G8370-01 G8370-02 G8370-03 G8370-05 SE-171 KIRD1050E03 photodiode InGaAs NEP G8370-01 G8370-02 G8370-03 G8370-05

    G8370-01

    Abstract: G8370 G8370-02 G8370-03 G8370-05
    Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		PDF G8370 G8370-01 G8370-02 G8370-03 G8370-05 SE-171 KIRD1050E04 2006DN G8370-01 G8370-02 G8370-03 G8370-05

    G8370-01

    Abstract: G8370 G8370-02 G8370-03 G8370-05
    Text: PHOTODIODE InGaAs PIN photodiode G8370 series Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes have large shunt resistance and feature very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.


    Original     		PDF G8370 G8370-01 G8370-02 G8370-03 G8370-05 SE-171 KIRD1050E01 G8370-01 G8370-02 G8370-03 G8370-05

    PD-1300

    Abstract: ingaas LED
    Text: epitex Opto-Device & Custom LED PD1300-35T00 Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1300-35T00 is InGaAs PIN-photodiode featuring excellent. responsibility and high photocurrent for near infrared. This PIN-photodiode consists of a large chip with 0.35x0.35mm


    Original     		PDF PD1300-35T00 PD1300-35T00 60degrees. 35mmx0 1300nm PD-1300 ingaas LED

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED Φ5 STEM TYPE stem type InGaAs PD Lead Pb Free Product RoHS compliant PD1300-35D52-I InGaAs PIN-PD PD1300-35D52 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted


    Original     		PDF PD1300-35D52-I PD1300-35D52 35mmx0 1300nm

    ingaas LED

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED PD1300-35D00-I Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1300-35D00-I is InGaAs PIN-photodiode featuring excellent. responsibility and high photocurrent for near infrared. This PIN-photodiode consists of a large chip with 0.35x0.35mm


    Original     		PDF PD1300-35D00-I PD1300-35D00-I 60degrees. 35mmx0 1300nm ingaas LED

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED PD1450-35T52 Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1450-35T52 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted on the TO-18 stem and is hermetical sealed


    Original     		PDF PD1450-35T52 PD1450-35T52 35mmx0 1450nm

    Untitled

    Abstract: No abstract text available
    Text: InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP dual inline package . It can be used to perform simple spectroscopic analysis.


    Original     		PDF G12430 G12430-016D G12430-032D G12430-046D 40-pin 48-pin 18-pin KIRD1124E02

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED Φ5 STEM TYPE stem type InGaAs PD PRELIMINARY Lead Pb Free Product RoHS compliant PD1450-35D52-I InGaAs PIN-PD PD1450-35D52-I is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted


    Original     		PDF PD1450-35D52-I PD1450-35D52-I 35mmx0 1450nm

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED PD1300-35T52 Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1300-35T52 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted on the TO-18 stem and is hermetical sealed


    Original     		PDF PD1300-35T52 PD1300-35T52 35mmx0 1300nm

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED PD1300-35D52-I Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1300-35D52 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted on the TO-18 stem and is hermetical sealed


    Original     		PDF PD1300-35D52-I PD1300-35D52 35mmx0 1300nm

    PD1450-35T32

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED PD1450-35T32 Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1450-35T32 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted on the TO-18 stem and is hermetical sealed


    Original     		PDF PD1450-35T32 PD1450-35T32 35mmx0 1300nm

    PIN photodiode 500 nm

    Abstract: GFD1300-550 Photodiode Honeywell DBM 01 ACTIVE LOAD PHOTODIODE photodiode esd sensitivity pin Photodiode 1300 nm
    Text: GFD1300-550 1300 nm InGaAs PIN Photodiode FEATURES • InGaAs planar PIN photodiode giving a minimum responsivity of 6 mV/µW at a 1300 nm wavelength • Typical bandwidth of 100 MHZ • Operating temperature-10¡C to +65¡C Opho_225.tif DESCRIPTION The GFD1300-550 is an InGaAs photodiode with


    Original     		PDF GFD1300-550 temperature-10 GFD1300-550 FIBER54 PIN photodiode 500 nm Photodiode Honeywell DBM 01 ACTIVE LOAD PHOTODIODE photodiode esd sensitivity pin Photodiode 1300 nm

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE InGaAs PIN photodiode G8195 series Pigtail type, 1.3/1.55 µm, 2 GHz G8195 series are high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode integrated in a pig-tail module.


    Original     		PDF G8195 SE-171 KIRD1034E02

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED PD1450-35T52 Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1450-35T52 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted on the TO-18 stem and is hermetical sealed


    Original     		PDF PD1450-35T52 PD1450-35T52 35mmx0 1450nm

    Untitled

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED PD1300-35T32 Φ5 STEM TYPE stem type InGaAs PD InGaAs PIN-PD PD1300-35T32 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a large chip with 0.35x0.35mm active area mounted on the TO-18 stem and is hermetical sealed


    Original     		PDF PD1300-35T32 PD1300-35T32 35mmx0 1300nm

    PD1300-35T00

    Abstract: No abstract text available
    Text: epitex Opto-Device & Custom LED Φ5 STEM TYPE stem type InGaAs PD Lead Pb Free Product RoHS compliant PD1300-35T00 InGaAs PIN-PD PD1300-35T00 is InGaAs PIN-photodiode featuring excellent. responsibility and high photocurrent for near infrared. This PIN-photodiode consists of a large chip with 0.35x0.35mm


    Original     		PDF PD1300-35T00 PD1300-35T00 60degrees. 1300nm

    SE-171

    Abstract: G8195 G8195-11 G8195-12 pin photodiode 10 ghz Hamamatsu se171
    Text: PHOTODIODE InGaAs PIN photodiode G8195 series Pigtail type, 1.3/1.55 µm, 2 GHz G8195 series are high-speed receivers specifically developed for 1.3/1.55 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity InGaAs PIN photodiode integrated in a pig-tail module.


    Original     		PDF G8195 SE-171 KIRD1034E02 G8195-11 G8195-12 pin photodiode 10 ghz Hamamatsu se171