S7329-01
Abstract: S7762 S8223 S8314
Text: PHOTODIODE Si PIN photodiode Plastic package Available with 60 MHz to 500 MHz response speeds Hamamatsu provides various types of Si PIN photodiodes molded into clear plastic packages. These photodiodes are available with cut-off frequencies from 60 MHz to 500 MHz, allowing you to make the selection that best suits your application.
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S7329-01
S7836-01
S8223
S8314
S7762
SE-171
KPIN1053E05
S7329-01
S7762
S8223
S8314
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S7836-01
Abstract: No abstract text available
Text: PHOTODIODE Si PIN photodiode Plastic package Available with 60 MHz to 500 MHz response speeds Hamamatsu provides various types of Si PIN photodiodes molded into clear plastic packages. These photodiodes are available with cut-off frequencies from 60 MHz to 500 MHz, allowing you to make the selection that best suits your application.
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SE-171
KPIN1053E04
S7836-01
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S8223
Abstract: laser diode 780 nm S8314 photodiode S3321-04 S7329-01 S7762 S7836 S8314 L-P-410
Text: PHOTODIODE Si PIN photodiode Plastic package Available with 60 MHz to 500 MHz response speeds Hamamatsu provides various types of Si PIN photodiodes molded into clear plastic packages. These photodiodes are available with cut-off frequencies from 60 MHz to 500 MHz, allowing you to make the selection that best suits your application.
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S7329-01
S7836
S3321-04
S8223
S8314
S7762
SE-171
KPIN1053E03
S8223
laser diode 780 nm
S8314 photodiode
S3321-04
S7329-01
S7762
S7836
S8314
L-P-410
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RLT650-500-T
Abstract: No abstract text available
Text: RLT650-500-T TECHNICAL DATA High Power Visible Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 650 nm Optical Ouput Power: 500 mW Package: TO-3, without Photodiode Electrical Connection Pin Configuration PIN 1
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RLT650-500-T
RLT650-500-T
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RLT83500G
Abstract: No abstract text available
Text: RLT83500G TECHNICAL DATA High Power Infrared Laser Diode Lasing wavelength: 830 nm typ. Max. optical power: 500 mW, cw Emitting Aperture: 1x50 m² Package: 9 mm PIN CONNECTION: 1 Laserdiode cathode 2) Laserdiode anode and photodiode cathode 3) Photodiode anode
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RLT83500G
rlt83500g
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s838
Abstract: S8223 S7329-01
Text: PREVIOUS DATA PHOTODIODE Si PIN photodiode Plastic package Available with 60 MHz to 500 MHz response speeds Hamamatsu provides various types of Si PIN photodiodes molded into clear plastic packages. These photodiodes are available with cut-off frequencies from 60 MHz to 500 MHz, allowing you to make the selection that best suits your application. S8387 offers high sensitivity in the violet
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S8387
SE-171
KPIN1053E02
s838
S8223
S7329-01
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laser diode 780 nm
Abstract: S8223 S7329-01 S8314 photodiode Laser Diode 780 IR-Laser-Diode s7836 S3321-04 S7762 S8314
Text: PHOTODIODE Si PIN photodiode Plastic package Available with 60 MHz to 500 MHz response speeds Hamamatsu provides various types of Si PIN photodiodes molded into clear plastic packages. These photodiodes are available with cut-off frequencies from 60 MHz to 500 MHz, allowing you to make the selection that best suits your application. S8387 offers high sensitivity in the violet
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S8387
SE-171
KPIN1053E02
laser diode 780 nm
S8223
S7329-01
S8314 photodiode
Laser Diode 780
IR-Laser-Diode
s7836
S3321-04
S7762
S8314
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photodiode 110
Abstract: transistor 1BW G8336-02 S7861 S7861-02 S8334 S8334-02 G8336 GaAs photodiode
Text: PHOTODIODE Si/GaAs PIN photodiode with preamp S8334/S7861/G8336 series TO-18 package, 0.65/0.8 mm, 500 Mbps/1.25, 2.1 Gbps S8334/S7861/G8336 series are high-speed receivers specifically developed for 0.65/0.8 µm band optical fiber communications. These devices incorporate a high-speed, high-sensitivity Si or GaAs PIN photodiode integrated with a high-speed preamp, allowing easy
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S8334/S7861/G8336
IEEE1394
S8334
S7861
G8336
SE-171
KPIN1042E01
photodiode 110
transistor 1BW
G8336-02
S7861-02
S8334-02
GaAs photodiode
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fast photodiode amplifier
Abstract: si photodiode G8336 G8336-02 S7861 S7861-02 S8334 S8334-02 GaAs photodiode
Text: PHOTODIODE Si/GaAs PIN photodiode with preamp S8334/S7861/G8336 series TO-18 package, 0.65/0.8 mm, 500 Mbps/1.25, 2.1 Gbps S8334/S7861/G8336 series devices are high-speed receivers specifically developed for 0.65/0.8 µm band optical fiber communications.
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S8334/S7861/G8336
IEEE1394
S8334
S7861
G8336
SE-171
KPIN1042E01
fast photodiode amplifier
si photodiode
G8336-02
S7861-02
S8334-02
GaAs photodiode
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si/GaAs PIN photodiode with preamp S8334/S7861/G8336 series TO-18 package, 0.65/0.8 mm, 500 Mbps/1.25, 2.1 Gbps S8334/S7861/G8336 series devices are high-speed receivers specifically developed for 0.65/0.8 µm band optical fiber communications.
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S8334/S7861/G8336
IEEE1394
S8334
S7861
G8336
SE-171
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PIN photodiode 500 nm
Abstract: silicon pin photodiode laser detection S6795 DVD Laser pickup optical pickup unit dvd laser green laser dvd optical pickup optical pickup laser pickup dvd S7747
Text: Si PIN PHOTODIODE S7747 6-element photodiode for violet laser detection FEATURES l Clear plastic molded package 454.8 mm l High sensitivity: 0.26 A/W Typ. (λ=410 nm) l High-speed response: 500 MHz Typ. (VR=5 V) APPLICATIONS l Violet to blue green laser detection
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S7747
S7747
S6795)
KMPDB0103EA
S6795
KMPDA0007EA
PIN photodiode 500 nm
silicon pin photodiode laser detection
S6795
DVD Laser pickup
optical pickup unit dvd laser
green laser
dvd optical pickup
optical pickup
laser pickup dvd
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G8337
Abstract: S8221 S8335 S-8335
Text: PHOTODIODE Si/GaAs PIN photodiode with preamp S8335/S8221/G8337 series Receptacle type, 0.65/0.8 µm, 500 Mbps/1.25 • 2.1 Gbps S8335/S8221/G8337 series are high-speed receivers specifically developed for 0.65/0.8 µm band optical fiber communications. These devices
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S8335/S8221/G8337
IEEE1394
S8335
S8221
G8337
SE-171
KPIN1043E01
S-8335
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"Photo Diode"
Abstract: dual photodiode fiber optical photo detector optical amplifier PHOTODIODE 708 photodiode amplifier Pulse-Width-Modulation Control Circuit SMA Package PDB-708
Text: PHOTONIC DETECTORS INC. High Speed Detector Amplifier Hybrid Type PDB-708 PACKAGE DIMENSIONS INCH [mm] .205 [5.21] .162 [4.11] .500 [12.7] MIN PHOTODIODE CHIP 5 4 6 Ø.100 [Ø2.54] PIN CIRCLE Ø.184 [4.67] Ø.210 [5.33] Ø.155 [3.94] 3 1 PHOTODIODE OP-AMP
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PDB-708
PDB-708
100-PDB-708
"Photo Diode"
dual photodiode
fiber optical photo detector
optical amplifier
PHOTODIODE 708
photodiode amplifier
Pulse-Width-Modulation Control Circuit
SMA Package
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PDB-708
Abstract: No abstract text available
Text: PHOTONIC DETECTORS INC. High Speed Detector Amplifier Hybrid Type PDB-708 PACKAGE DIMENSIONS INCH [mm] .205 [5.21] .162 [4.11] .500 [12.7] MIN PHOTODIODE CHIP 5 4 6 Ø.100 [Ø2.54] PIN CIRCLE Ø.184 [4.67] Ø.210 [5.33] Ø.155 [3.94] 3 1 PHOTODIODE OP-AMP
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PDB-708
PDB-708
100-PDB-708
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Untitled
Abstract: No abstract text available
Text: Non-Cooled Large Area DUV Silicon Avalanche Photodiode SD 630-70-75-500 PACKAGE DIMENSIONS INCHES Connector center pin cathode Connector outer jacket anode SHV PACKAGE FEATURES DESCRIPTION APPLICATIONS • Low noise • High gain • High Speed The SD 630-70-75-500 is a windowless non-cooled
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675nm
675nm
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Untitled
Abstract: No abstract text available
Text: Non-Cooled Large Area UV Silicon Avalanche Photodiode SD 630-70-73-500 PACKAGE DIMENSIONS INCHES Connector center pin cathode Connector outer jacket anode SHV PACKAGE FEATURES DESCRIPTION APPLICATIONS • Low noise • High gain • High Speed The SD 630-70-73-500 is a non-cooled large area UV
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675nm
675nm
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photodiode Avalanche photodiode
Abstract: avalanche photodiode bias APD, applications, bias supply Avalanche photodiode APD
Text: Non-Cooled Large Area Blue Silicon Avalanche Photodiode SD 630-70-74-500 PACKAGE DIMENSIONS INCHES Connector center pin cathode Connector outer jacket anode SHV PACKAGE FEATURES DESCRIPTION APPLICATIONS • Low noise • High gain • High Speed The SD 630-70-74-500 is a non-cooled large area
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675nm
675nm
photodiode Avalanche photodiode
avalanche photodiode bias
APD, applications, bias supply
Avalanche photodiode APD
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photodiode Avalanche photodiode
Abstract: APD, applications, bias supply avalanche photodiode bias avalanche photodiode bias and high voltage avalanche photodiode Avalanche photodiode APD
Text: Non-Cooled Large Area Red Silicon Avalanche Photodiode SD 630-70-72-500 PACKAGE DIMENSIONS INCHES Connector center pin cathode Connector outer jacket anode SHV PACKAGE FEATURES DESCRIPTION APPLICATIONS • Low noise • High gain • High Speed The SD 630-70-72-500 is a non-cooled large area
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675nm
675nm
photodiode Avalanche photodiode
APD, applications, bias supply
avalanche photodiode bias
avalanche photodiode bias and high voltage
avalanche photodiode
Avalanche photodiode APD
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Untitled
Abstract: No abstract text available
Text: Non-Cooled Large Area UV Silicon Avalanche Photodiode SD 630-70-73-500 PACKAGE DIMENSIONS INCHES Connector center pin cathode Connector outer jacket anode SHV PACKAGE FEATURES DESCRIPTION APPLICATIONS • Low noise • High gain • High Speed The SD 630-70-73-500 is a non-cooled large area UV
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675nm
675nm
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"IR led Sensor"
Abstract: IR photodiode 880 nm ir proximity sensor nir leds PDI-G103 ir led 940 nm 1 w isolated voltage sensor 1mhz PIN photodiode 500 nm IR LED SENSOR
Text: PHOTONIC DETECTORS INC. GaAlAs 880 nm peak Photodiode Type PDI-G103 PACKAGE DIMENSIONS inch [mm] HEADER .210 [5.33] WINDOW CAP (WELDED) .155 [3.98] .100 [2.54] PIN CIRCLE CL .053 [1.35] 45° 3X Ø.018 [0.46] VIEWING ANGLE 65° .500 [12.70] Ø.185 [4.70]
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PDI-G103
25OCssed
100-PDI-G103
"IR led Sensor"
IR photodiode 880 nm
ir proximity sensor
nir leds
PDI-G103
ir led 940 nm 1 w
isolated voltage sensor 1mhz
PIN photodiode 500 nm
IR LED SENSOR
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RLT808500G
Abstract: No abstract text available
Text: RLT808500G TECHNICAL DATA High Power Infrared Laserdiode Structure: High Efficiency MOVCD Quantum Well Design Lasing wavelength: 808 nm typ. NOTE! Output power: 500 mW, cw LASERDIODE Package: 9 mm MUST BE COOLED! PIN CONNECTION: 1 Laser diode cathode 2) Laser diode anode and photodiode cathode
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RLT808500G
rlt808500g
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Untitled
Abstract: No abstract text available
Text: PHOTONIC DETECTORS INC. GaAlAs 880 nm peak Photodiode Type PDI-G103L PACKAGE DIMENSIONS inch [mm] HEADER .210 [5.33] LENS CAP (WELDED) .155 [3.98] .100 [2.54] PIN CIRCLE CL .053 [1.35] 45° 3X Ø.018 [0.46] 40° VIEWING ANGLE .500 [12.70] Ø.185 [4.70] .150 [3.81]
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PDI-G103L
100-PDI-G103L
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S05S05
Abstract: No abstract text available
Text: SIEMENS FC RECEPTACLE and FLANGE SRD0021 7H /0 Ternary PIN Photodiode Dimensions in inches mm SRD00217H 10 .020 (.50) r 0 .012 (.30) m c o /i m c c \ S R D 002170 096 (2.4) 080 (2.0) .524 (13.1) .500 (12.5) FEATURES InGaAs/lnP, PIN photodiode Designed for telecom applications
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SRD00217H
SRD0021
SRD00217H
SRD002170
SRD00217H/0
S05S05
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quadrant photodiode
Abstract: No abstract text available
Text: «Of T0X9108 Large Area Silicon Quadrant PIN Photodiode Taxas Optoelectronics, Inc. DESCRIPTION FEATURES Quadrant Geometry For Alignment and Tracking Applications Diameter of Active Area, 0.650 Inch Rise and Fall Times, 10 ns Typ at 900 nm Wavelength Dark Current 500 nA Typ per Quadrant
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T0X9108
000D524
IH375)
quadrant photodiode
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