InGaas PIN photodiode, 1550
Abstract: InGaAs photodiode 1310 1550 PIN Photodiode 4 Ghz 1550 nm PHOTODIODE PD 20
Text: InGaAs PIN Photodiode Modules R-11-300-R/R-xxx Features • InGaAs/InP PIN Photodiode • High responsivity at 1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case
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R-11-300-R/R-xxx
LUMNDS539-0703
InGaas PIN photodiode, 1550
InGaAs photodiode 1310 1550
PIN Photodiode 4 Ghz 1550 nm
PHOTODIODE PD 20
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PIN Photodiode 1550nm
Abstract: PIN photodiode 1310 1310nm photodiode 1550nm photodiode 3,8 Ghz PIN photodiode responsivity 1550nm 2,5 GHz InGaAs Photodiode 1550nm
Text: InGaAs PIN Photodiode Modules R-11-300-X-XXX-XX Features • InGaAs/InP PIN Photodiode • High responsivity at 1310nm and 1550nm • Low dark current • Fast pulse response • -40~85ºC operating temperature • Hermetically sealed 3-pin metal case Packaging
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R-11-300-X-XXX-XX
1310nm
1550nm
LUMNDS539-MAR2007
PIN Photodiode 1550nm
PIN photodiode 1310
1310nm photodiode
1550nm photodiode 3,8 Ghz
PIN photodiode responsivity 1550nm 2,5 GHz
InGaAs Photodiode 1550nm
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InGaas PIN photodiode chip
Abstract: No abstract text available
Text: InGaAs PIN Photodiode Chip R-11-300-C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Operate at -40 to 85ºC • Active diameter is 280µm • Monitor PD application Absolute Maximum Rating Tc=25ºC
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R-11-300-C
131ing
LUMNDS561-MAR1504
InGaas PIN photodiode chip
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InGaas PIN photodiode chip
Abstract: No abstract text available
Text: InGaAs PIN Photodiode Chip R-11-300-C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Operate at -40 to 85ºC • Active diameter is 280µm • Monitor PD application Absolute Maximum Rating Tc=25ºC
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R-11-300-C
LUMNDS561-MAR3104
InGaas PIN photodiode chip
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN Photodiode R-11-XXX-G-B B Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • Active diameter is 40, 55, 75,100 or 300 µm
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R-11-XXX-G-B
R-11-040-G-B
LUMNDS564-OCT1504
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Photodiode 1310
Abstract: InGaAs photodiode TO-46 R-11-055-G-B R-11-075-G-BB R-11-100-G-B R-11-300-G-B 10 gb laser photodiode TO46 package R1105
Text: InGaAs PIN Photodiode R-11-xxx-G-B B Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • Active diameter is 55, 75,100 or 300 µm
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R-11-xxx-G-B
LUMNDS564-MAR1804
Photodiode 1310
InGaAs photodiode TO-46
R-11-055-G-B
R-11-075-G-BB
R-11-100-G-B
R-11-300-G-B
10 gb laser photodiode
TO46 package
R1105
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN Photodiode R-11-XXX-G-A B Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • Active diameter is 40, 55, 75,100 or 300 µm
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R-11-XXX-G-A
R-11-040-G-A
LUMNDS008-OCT1504
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PT511-2
Abstract: No abstract text available
Text: PT511-2 TECHNICAL DATA TO-Can PIN Photodiode PT511-2 is an InGaAs pin structure based photodiode on InP by MOCVD method and planar diffusing technology. The sensitive area is Ø 300µm respectively. TO-46 package with flat glass lens. Absolute Maximum Ratings
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PT511-2
PT511-2
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN Photodiode R-11-XXX-G-B B -C Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • Active diameter is 40, 55, 75,100 or 300 µm
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R-11-XXX-G-B
R-11-040-G-B
LUMNDS792-OCT1504
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PT511B
Abstract: No abstract text available
Text: PT511B TECHNICAL DATA TO-Can PIN Photodiode Ball Lens PT511B is an InGaAs pin structure based photodiode on InP by MOCVD method and planar diffusing technology. The sensitive area is Ø 300µm respectively. TO-46 package with ball lens. Absolute Maximum Ratings Ta=25°C
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PT511B
PT511B
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PT521
Abstract: No abstract text available
Text: PT521 TECHNICAL DATA TO-Can PIN Photodiode Flat Window PT521 is an InGaAs pin structure based photodiode on InP by MOCVD method and planar diffusing technology. The sensitive area is Ø 300µm respectively. TO-46 package with flat window. Absolute Maximum Ratings Ta=25°C
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PT521
PT521
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mid ir photodiode
Abstract: MID-56419
Text: T-1 3/4 PACKAGE PIN PHOTODIODE MID-56419 Package Dimensions Description The MID-56419 is a photodiode mounted in water clear Unit: mm inches end look plastic package and suitable for the variety ψ5.05 (.200) wavelength. 5.47 (.215) 7.62 (.300) 5.90 (.230)
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MID-56419
MID-56419
00MIN.
emerg419
mid ir photodiode
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PIN photodiode 850nm
Abstract: PIN photodiode sensitivity 850nm 850nm MID-54H19
Text: T-1 3/4 PACKAGE PIN PHOTODIODE Description MID-54H19 Package Dimensions The MID-54H19 is a photodiode mounted in special Unit : mm inches dark end look plastic package and suitable for the ψ5.05 (.200) IRED (850nm/880nm) type. 5.47 (.215) 7.62 (.300)
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MID-54H19
MID-54H19
850nm/880nm)
40MIN.
50TYP.
00MIN.
PIN photodiode 850nm
PIN photodiode sensitivity 850nm
850nm
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mid ir photodiode
Abstract: IR led 940nm MID-56A19
Text: T-1 3/4 PACKAGE PIN PHOTODIODE Description MID-56A19 Package Dimensions The MID-56A19 is a photodiode mounted in Unit: mm inches ψ5.05 (.200) special dark end look plastic package and suitable for the IRED 940nm type. 5.47 (.215) 7.62 (.300) 5.90 (.230)
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MID-56A19
MID-56A19
940nm
00MIN.
mid ir photodiode
IR led 940nm
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mid ir photodiode
Abstract: MID-54A19 940NM
Text: T-1 3/4 PACKAGE PIN PHOTODIODE Description MID-54A19 Package Dimensions The MID-54A19 is a photodiode mounted in special ψ5.05 .200 dark end look plastic package and suitable for the Unit: mm ( inches IRED (940nm) type. 5.47 (.215) 7.62 (.300) 5.90 (.230)
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MID-54A19
MID-54A19
940nm)
40MIN.
50TYP.
00MIN.
mid ir photodiode
940NM
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KPINA0024EA
Abstract: S3071 S3072 S3399 S3883 V424
Text: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from φ1.5 to φ5.0 mm yet they offer excellent frequency response from 40 to 300 MHz. These photodiodes are suitable for spatial light transmission and high-speed pulsed light detection.
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S3071,
S3072,
S3399,
S3883
S3399
S3883
S3071:
S3072:
KPINA0024EA
S3071
S3072
V424
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KPINA0024EA
Abstract: S3071 S3072 S3399 S3883
Text: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from φ1.5 to φ5.0 mm yet they offer excellent frequency response from 40 to 300 MHz. These photodiodes are suitable for spatial light transmission and high-speed pulsed light detection.
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S3071,
S3072,
S3399,
S3883
S3399
S3883
S3071:
S3072:
KPINA0024EA
S3071
S3072
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S3071
Abstract: S3072 S3399 S3883 VR24
Text: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from φ1.5 to φ5.0 mm yet they offer excellent frequency response from 40 to 300 MHz. These photodiodes are suitable for spatial light transmission and high-speed pulsed light detection.
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S3071,
S3072,
S3399,
S3883
S3399
S3883
S3071:
S3072:
S3071
S3072
VR24
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FGA10
Abstract: THORLABS FGA10 InGaAs photodiode spectral response InGaAs photodiode photodiode bias circuit C1012 1800nm Thorlabs PHOTODIODE FGA10 photodiode InGaAs NEP
Text: 435 Route 206 • P.O. Box 366 Newton, NJ 07860-0366 Ph. 973-579-7227 FAX 973-300-3600 FGA10 InGaAs Photodiode High Speed The FGA10 is a high-speed InGaAs photodiode with a spectral response from 700nm to 1800nm. This photodiode has a PIN structure that provides fast rise and fall times with a bias of 5V.
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FGA10
700nm
1800nm.
900nm:
700-1800nm
100nA
35/fBW
2234-S01
THORLABS FGA10
InGaAs photodiode spectral response
InGaAs photodiode
photodiode bias circuit
C1012
1800nm
Thorlabs
PHOTODIODE FGA10
photodiode InGaAs NEP
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KPINA0024EA
Abstract: S3071 S3072 S3399 S3883
Text: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from φ1.5 to φ5.0 mm yet they offer excellent frequency response from 40 to 300 MHz. These photodiodes are suitable for spatial light transmission and high-speed pulsed light detection.
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S3071,
S3072,
S3399,
S3883
S3399
S3883
S3071:
S3072:
KPINA0024EA
S3071
S3072
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si PIN photodiode S3071, S3072, S3399, S3883 Large area, high-speed Si PIN photodiodes S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from φ1.5 to φ5.0 mm yet they offer excellent frequency response from 40 to 300 MHz. These photodiodes are suitable for spatial light transmission and high-speed pulsed light detection.
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S3071,
S3072,
S3399,
S3883
S3399
S3883
S3071:
S3072:
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RLT65300T
Abstract: No abstract text available
Text: RLT65300T TECHNICAL DATA High Power Visible Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 650 nm Optical Ouput Power: 300 mW Package: TO-3, without Photodiode Electrical Connection Pin Configuration PIN 1 2 Bottom View
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RLT65300T
rlt65300t
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forward reverse schematic diagram
Abstract: R-11-055-G-B R-11-075-G-B R-11-075-G-BB R-11-100-G-B R-11-300-G-B InGaAs photodiodes 1310 1550
Text: InGaAs PIN Photodiodes R-11-055-G-B • R-11-075-G-B/BB • R-11-100-G-B • R-11-300-G-B Features • InGaAs/ InP PIN Photodiode • High responsivity at 1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85˚C operating temperature
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R-11-055-G-B
R-11-075-G-B/BB
R-11-100-G-B
R-11-300-G-B
R-11-055-G-B
LUMNDS008-0402
forward reverse schematic diagram
R-11-075-G-B
R-11-075-G-BB
R-11-100-G-B
R-11-300-G-B
InGaAs photodiodes 1310 1550
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Untitled
Abstract: No abstract text available
Text: ËO SIDELOOKER PIN PHOTODIODE OPTOELECTRONICS QSE773 The QSE773 is a silicon PIN photodiode encapsulated in an infrared transparent, black, plastic sidelooker package. -.108 2.75 - ±.008 .207 (5.26)— ±.008 K .300 (7.62) ±.012 .118(3.00)±.008 .610(15.48)
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QSE773
QSE773
ST1665
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