JDP4P02U
Abstract: No abstract text available
Text: JDP4P02U TOSHIBA Diode Silicon Epitaxial Pin Type JDP4P02U UHF~VHF Band RF Attenuator Applications • Unit: mm Two independent diodes are packed into 4-pin ultra-small packages and suitable for high-density mounting. · Low capacitance: CT = 0.3 pF typ.
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JDP4P02U
JDP4P02U
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Untitled
Abstract: No abstract text available
Text: JDP4P02U TOSHIBA Diode Silicon Epitaxial Pin Type JDP4P02U UHF~VHF Band RF Attenuator Applications • Unit: mm Two independent diodes are packed into 4-pin ultra-small packages and suitable for high-density mounting. • Low capacitance: CT = 0.3 pF typ.
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JDP4P02U
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JDP4P02U
Abstract: No abstract text available
Text: JDP4P02U TOSHIBA Diode Silicon Epitaxial Pin Type JDP4P02U UHF~VHF Band RF Attenuator Applications • Unit: mm Two independent diodes are packed into 4-pin ultra-small packages and suitable for high-density mounting. • Low capacitance: CT = 0.3 pF typ.
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JDP4P02U
JDP4P02U
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UM4301B
Abstract: z02 surface mounted transistor UM2100 Microwave PIN diode UM7301B RS12 UM4000 UM4300 UM6000 UM7000
Text: CHAPTER - 3 PIN DIODE RF ATTENUATORS 2 NOTES Microsemi Corp.-Watertown•580 Pleasant St., Watertown, MA 02472•Tel. 617 926-0404•Fax. (617) 924-1235 3 PIN DIODE VARIABLE ATTENUATORS INTRODUCTION An Attenuator [1] is a network designed to introduce a known amount of loss when functioning between two
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UM2100,
UM4000,
UM4300,
UM9552
UM6000,
UM7000
UM4301B
z02 surface mounted transistor
UM2100
Microwave PIN diode
UM7301B
RS12
UM4000
UM4300
UM6000
UM7000
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HP4291A
Abstract: JDP2S02AS
Text: JDP2S02AS TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02AS UHF~VHF Band RF Attenuator Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ.
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JDP2S02AS
HP4291A
JDP2S02AS
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JDP2S01U
Abstract: No abstract text available
Text: JDP2S01U TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01U UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. · Low series resistance: rs = 0.65 Ω typ.
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JDP2S01U
JDP2S01U
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HP4291A
Abstract: JDP2S02S
Text: JDP2S02S TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02S UHF~VHF Band RF Attenuator Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. · Low series resistance: rs = 1.0 Ω typ.
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JDP2S02S
HP4291A
JDP2S02S
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JDP2S02T
Abstract: No abstract text available
Text: JDP2S02T TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S02T UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. · Low series resistance: rs = 1.0 Ω typ.
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JDP2S02T
JDP2S02T
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Untitled
Abstract: No abstract text available
Text: 1SV312 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications • Unit: mm Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design. • Low capacitance: CT = 0.25 pF typ.
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1SV312
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Untitled
Abstract: No abstract text available
Text: JDP2S02S TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02S UHF~VHF Band RF Attenuator Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ.
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JDP2S02S
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HP4291A
Abstract: JDP2S02AS TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE
Text: JDP2S02AS TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02AS UHF~VHF Band RF Attenuator Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ.
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JDP2S02AS
HP4291A
HP4291A
JDP2S02AS
TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE
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HP4291A
Abstract: JDP2S02S
Text: JDP2S02S TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02S UHF~VHF Band RF Attenuator Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ.
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JDP2S02S
HP4291A
JDP2S02S
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JDP2S04E
Abstract: No abstract text available
Text: JDP2S04E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S04E VHF~UHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low capacitance ratio: CT = 0.25 pF typ.
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JDP2S04E
JDP2S04E
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HP4291A
Abstract: JDP2S01E
Text: JDP2S01E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01E UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 0.65 Ω typ.
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JDP2S01E
HP4291A
JDP2S01E
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Untitled
Abstract: No abstract text available
Text: JDP2S01S TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S01S UHF~VHF Band RF Attenuator Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 0.65Ω typ.
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JDP2S01S
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Untitled
Abstract: No abstract text available
Text: JDP2S01T TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01T UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 0.65 Ω typ.
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JDP2S01T
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JDP2S01E
Abstract: No abstract text available
Text: JDP2S01E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01E UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. · Low series resistance: rs = 0.65 Ω typ.
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JDP2S01E
JDP2S01E
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JDP2S01T
Abstract: No abstract text available
Text: JDP2S01T TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01T UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 0.65 Ω typ.
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JDP2S01T
JDP2S01T
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1SV312
Abstract: No abstract text available
Text: 1SV312 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications • Unit: mm Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design. • Low capacitance: CT = 0.25 pF typ.
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1SV312
1SV312
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JDP2S01T
Abstract: No abstract text available
Text: JDP2S01T TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01T UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 0.65 Ω typ.
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JDP2S01T
JDP2S01T
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HP4291A
Abstract: JDP2S01E
Text: JDP2S01E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01E UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 0.65 Ω typ.
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JDP2S01E
HP4291A
JDP2S01E
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Untitled
Abstract: No abstract text available
Text: JDP2S02S TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02S UHF~VHF Band RF Attenuator Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ.
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JDP2S02S
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Untitled
Abstract: No abstract text available
Text: JDP2S04E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S04E VHF~UHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low capacitance ratio: CT = 0.25 pF typ.
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JDP2S04E
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MI204
Abstract: No abstract text available
Text: b E M T fiS 1} GD1 7 7 2 7 222 • ANTENNA SWITCH MI204 PIN DIODE DESCRIPTION OUTLINE DRAWING The M I204 PIN diode is employing a high reliability glass construction designed for RF small signal attenuator in V H F UHF. FEATURES ] ii • Long carrier lifetime
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MI204
MI204
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