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    PIN DIODE ATTENUATOR UHF Search Results

    PIN DIODE ATTENUATOR UHF Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    PIN DIODE ATTENUATOR UHF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JDP4P02U

    Abstract: No abstract text available
    Text: JDP4P02U TOSHIBA Diode Silicon Epitaxial Pin Type JDP4P02U UHF~VHF Band RF Attenuator Applications • Unit: mm Two independent diodes are packed into 4-pin ultra-small packages and suitable for high-density mounting. · Low capacitance: CT = 0.3 pF typ.


    Original     		PDF JDP4P02U JDP4P02U

    Untitled

    Abstract: No abstract text available
    Text: JDP4P02U TOSHIBA Diode Silicon Epitaxial Pin Type JDP4P02U UHF~VHF Band RF Attenuator Applications • Unit: mm Two independent diodes are packed into 4-pin ultra-small packages and suitable for high-density mounting. • Low capacitance: CT = 0.3 pF typ.


    Original     		PDF JDP4P02U

    JDP4P02U

    Abstract: No abstract text available
    Text: JDP4P02U TOSHIBA Diode Silicon Epitaxial Pin Type JDP4P02U UHF~VHF Band RF Attenuator Applications • Unit: mm Two independent diodes are packed into 4-pin ultra-small packages and suitable for high-density mounting. • Low capacitance: CT = 0.3 pF typ.


    Original     		PDF JDP4P02U JDP4P02U

    UM4301B

    Abstract: z02 surface mounted transistor UM2100 Microwave PIN diode UM7301B RS12 UM4000 UM4300 UM6000 UM7000
    Text: CHAPTER - 3 PIN DIODE RF ATTENUATORS 2 NOTES Microsemi Corp.-Watertown•580 Pleasant St., Watertown, MA 02472•Tel. 617 926-0404•Fax. (617) 924-1235 3 PIN DIODE VARIABLE ATTENUATORS INTRODUCTION An Attenuator [1] is a network designed to introduce a known amount of loss when functioning between two


    Original     		PDF UM2100, UM4000, UM4300, UM9552 UM6000, UM7000 UM4301B z02 surface mounted transistor UM2100 Microwave PIN diode UM7301B RS12 UM4000 UM4300 UM6000 UM7000

    HP4291A

    Abstract: JDP2S02AS
    Text: JDP2S02AS TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02AS UHF~VHF Band RF Attenuator Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ.


    Original     		PDF JDP2S02AS HP4291A JDP2S02AS

    JDP2S01U

    Abstract: No abstract text available
    Text: JDP2S01U TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01U UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. · Low series resistance: rs = 0.65 Ω typ.


    Original     		PDF JDP2S01U JDP2S01U

    HP4291A

    Abstract: JDP2S02S
    Text: JDP2S02S TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02S UHF~VHF Band RF Attenuator Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. · Low series resistance: rs = 1.0 Ω typ.


    Original     		PDF JDP2S02S HP4291A JDP2S02S

    JDP2S02T

    Abstract: No abstract text available
    Text: JDP2S02T TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S02T UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. · Low series resistance: rs = 1.0 Ω typ.


    Original     		PDF JDP2S02T JDP2S02T

    Untitled

    Abstract: No abstract text available
    Text: 1SV312 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications • Unit: mm Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design. • Low capacitance: CT = 0.25 pF typ.


    Original     		PDF 1SV312

    Untitled

    Abstract: No abstract text available
    Text: JDP2S02S TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02S UHF~VHF Band RF Attenuator Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ.


    Original     		PDF JDP2S02S

    HP4291A

    Abstract: JDP2S02AS TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE
    Text: JDP2S02AS TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02AS UHF~VHF Band RF Attenuator Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ.


    Original     		PDF JDP2S02AS HP4291A HP4291A JDP2S02AS TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE

    HP4291A

    Abstract: JDP2S02S
    Text: JDP2S02S TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02S UHF~VHF Band RF Attenuator Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ.


    Original     		PDF JDP2S02S HP4291A JDP2S02S

    JDP2S04E

    Abstract: No abstract text available
    Text: JDP2S04E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S04E VHF~UHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low capacitance ratio: CT = 0.25 pF typ.


    Original     		PDF JDP2S04E JDP2S04E

    HP4291A

    Abstract: JDP2S01E
    Text: JDP2S01E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01E UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 0.65 Ω typ.


    Original     		PDF JDP2S01E HP4291A JDP2S01E

    Untitled

    Abstract: No abstract text available
    Text: JDP2S01S TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S01S UHF~VHF Band RF Attenuator Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 0.65Ω typ.


    Original     		PDF JDP2S01S

    Untitled

    Abstract: No abstract text available
    Text: JDP2S01T TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01T UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 0.65 Ω typ.


    Original     		PDF JDP2S01T

    JDP2S01E

    Abstract: No abstract text available
    Text: JDP2S01E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01E UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. · Low series resistance: rs = 0.65 Ω typ.


    Original     		PDF JDP2S01E JDP2S01E

    JDP2S01T

    Abstract: No abstract text available
    Text: JDP2S01T TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01T UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 0.65 Ω typ.


    Original     		PDF JDP2S01T JDP2S01T

    1SV312

    Abstract: No abstract text available
    Text: 1SV312 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV312 VHF~UHF Band RF Attenuator Applications • Unit: mm Two independent diodes mounted onto a 4-pin ultra compact package and it is suitable for high-density circuit design. • Low capacitance: CT = 0.25 pF typ.


    Original     		PDF 1SV312 1SV312

    JDP2S01T

    Abstract: No abstract text available
    Text: JDP2S01T TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01T UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 0.65 Ω typ.


    Original     		PDF JDP2S01T JDP2S01T

    HP4291A

    Abstract: JDP2S01E
    Text: JDP2S01E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01E UHF~VHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 0.65 Ω typ.


    Original     		PDF JDP2S01E HP4291A JDP2S01E

    Untitled

    Abstract: No abstract text available
    Text: JDP2S02S TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02S UHF~VHF Band RF Attenuator Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ.


    Original     		PDF JDP2S02S

    Untitled

    Abstract: No abstract text available
    Text: JDP2S04E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S04E VHF~UHF Band RF Attenuator Applications • Unit: mm Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low capacitance ratio: CT = 0.25 pF typ.


    Original     		PDF JDP2S04E

    MI204

    Abstract: No abstract text available
    Text: b E M T fiS 1} GD1 7 7 2 7 222 • ANTENNA SWITCH MI204 PIN DIODE DESCRIPTION OUTLINE DRAWING The M I204 PIN diode is employing a high reliability glass construction designed for RF small signal attenuator in V H F UHF. FEATURES ] ii • Long carrier lifetime


    OCR Scan     		PDF MI204 MI204