SIM6822M
Abstract: SIM6822 SIM6812 SIM6827M SIM68 SIM6800M SIM6 Diodes Incorporated equivalent part ls3b AT/SIM6822M
Text: SIM6800M Series High Voltage 3-Phase Motor Driver ICs Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ Description Built-in pre-drive IC MOSFET or IGBT power element Alleviate noise generation by adjusting an internal resistor CMOS compatible input 3.3 V and 5 V
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SIM6800M
40-pin)
E118037
SIM6800M-DS
SIM6822M
SIM6822
SIM6812
SIM6827M
SIM68
SIM6
Diodes Incorporated equivalent part
ls3b
AT/SIM6822M
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Untitled
Abstract: No abstract text available
Text: SIM6800M Series High Voltage 3-Phase Motor Driver ICs Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ Description Built-in pre-drive IC MOSFET or IGBT power element Alleviate noise generation by adjusting an internal resistor CMOS compatible input 3.3 V and 5 V
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SIM6800M
40-pin)
SIM6800M-DS
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Untitled
Abstract: No abstract text available
Text: L6385E High voltage high and low-side driver Datasheet - production data Description DIP-8 The L6385E is a simple and compact high voltage gate driver, manufactured with the BCD “offline” technology, and able to drive a half-bridge of power MOS or IGBT devices. The high-side
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L6385E
L6385E
DocID13863
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Untitled
Abstract: No abstract text available
Text: L6386AD High voltage high and low-side driver Datasheet - production data Description The L6386AD is a high voltage gate driver, manufactured with the BCD “offline” technology, and able to drive simultaneously one high and one low-side power MOS or IGBT
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L6386AD
L6386AD
SO-14
DocID14914
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CHMC IC
Abstract: CHMC D8316 D8316 chmc LTAGE D831 chmc si1 chmc so2 si103
Text: Silicore IGBT GATE DRIVER D8316 DESCRIPTION Outline Drawing D8316 is a dedicated IC integrating IGBT gate drive circuit on a sing le chip . A high cu rrent directly drives IGBT . FEATURE z Can directly control fro m a micro controller. z Can directly drive the IGBT gate using a high
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D8316
D8316
-200mA
5600pF
V/50kHz
CHMC IC
CHMC D8316
chmc
LTAGE
D831
chmc si1
chmc so2
si103
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Untitled
Abstract: No abstract text available
Text: STGIPN3H60A SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Datasheet - production data Applications • 3-phase inverters for motor drives • Dish washers, refrigerator compressors, heating systems, air-conditioning fans,
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STGIPN3H60A
NDIP-26L
DocID018958
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STGIPN3H60A
Abstract: NDIP-26L STGIPN3H60 STMicroelectronics 2905
Text: STGIPN3H60A SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Features • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ Optimized for low electromagnetic interference
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STGIPN3H60A
NDIP-26L
STGIPN3H60A
NDIP-26L
STGIPN3H60
STMicroelectronics 2905
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STGIPN3H60
Abstract: 3 phase IGBT inverter
Text: STGIPN3H60A SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Preliminary data Features • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■
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STGIPN3H60A
NDIP-26L
STGIPN3H60
3 phase IGBT inverter
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Untitled
Abstract: No abstract text available
Text: YD8316 YOUDA INTEGRATED CIRCUIT IGBT GATE DRIVER—YD8316 DESCRIPTION The YD8316 is a dedicated IC integrating IGBT gate drive circuits on a single chip. A high current directly drives IGBT FEATURES *Can directly control from a micro-controller, *Can directly drive the IGBT gate using a high current. Source current: -200mA max , sink current 1A(max),
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YD8316
YD8316
-200mA
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BG2C-5015
Abstract: IGBT DRIVER SCHEMATIC VLA513 VLA106-15242 15242 VLA502-01 VLA106-24242 VLA507
Text: Application First Release: February 20, 2006 NOTES: BG2C – Universal Gate Drive Prototype Board Description: The BG2C is a two channel gate drive circuit designed for use with high frequency optimized IGBT modules. The BG2C utilizes Powerex VLA507 or VLA513 hybrid gate drivers and VLA106 series DC to DC
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VLA507
VLA513
VLA106
200ns
2500VRMS
VLA502-01
BG2C-5015
IGBT DRIVER SCHEMATIC
VLA106-15242
15242
VLA106-24242
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VLA513
Abstract: BG2C OPTOCOUPLER, POWER, 5A DC, 24VDC CONTROL 15242 BG2C-5015 VLA106-15242 VLA106-24242 VLA507 powerex igbt high speed opto coupler
Text: Application First Release: February 20, 2006 NOTES: BG2C – Universal Gate Drive Prototype Board Description: The BG2C is a two channel gate drive circuit designed for use with high frequency optimized IGBT modules. The BG2C utilizes Powerex VLA507 or VLA513 hybrid gate drivers and VLA106 series DC to DC
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VLA507
VLA513
VLA106
200ns
2500VRMS
VLA502-01
BG2C
OPTOCOUPLER, POWER, 5A DC, 24VDC CONTROL
15242
BG2C-5015
VLA106-15242
VLA106-24242
powerex igbt
high speed opto coupler
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UA8316 Preliminary LINEAR INTEGRATED CIRCUIT IGBT GATE DRIVER DESCRIPTION Integrating IGBT gate drive circuits on a single chip, The UTC UA8316 is a dedicated IC and a high current can directly drive IGBT. FEATURES * A high current can directly drive IGBT
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UA8316
UA8316
-200mA
UA8316L-G07-T
UA8316G-G07-T
QW-R122-010
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NDIP-26L
Abstract: GIPN3H60A STGIPN3H60 3 phase IGBT inverter AN4043 EB1 marking STGIPN3H60A gipn3h60
Text: STGIPN3H60A SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Datasheet − production data Features • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes
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STGIPN3H60A
NDIP-26L
NDIP-26L
GIPN3H60A
STGIPN3H60
3 phase IGBT inverter
AN4043
EB1 marking
STGIPN3H60A
gipn3h60
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81712FP HIGH VOLTAGE THREE PHASE BRIDGE DRIVER DESCRIPTION M81712FP is high voltage Power MOSFET and IGBT module driver for THREE PHASE bridge applications. PIN CONFIGURATION TOP VIEW FEATURES ¡FLOATING SUPPLY VOLTAGE . 600V
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M81712FP
M81712FP
200mA/-500mA
28Pin
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Untitled
Abstract: No abstract text available
Text: Application Second Release: July 10, 2012 NOTES: BG2C – Universal Gate Drive Prototype Board Description: The BG2C is a two channel gate drive circuit designed for use with high frequency optimized IGBT modules. The BG2C utilizes Powerex VLA507 or VLA513 hybrid gate drivers and VLA106 series DC to DC
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VLA507
VLA513
VLA106
200ns
2500VRMS
100nd
VLA502-01
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Untitled
Abstract: No abstract text available
Text: STGIPN3H60A SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Datasheet − production data Features • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes
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STGIPN3H60A
NDIP-26L
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schematic diagram 24Vdc 5A regulator
Abstract: SCHEMATIC transformer drive IGBT M57959 M57962 VLA504-01 M57962L VLA5020 VLA106-15242 VLA-504-01 M57959L
Text: Application Second Release: July 10, 2012 NOTES: BG2B – Universal Gate Drive Prototype Board Description: The BG2B is a two channel gate drive circuit for high power IGBT modules. The BG2B utilizes Powerex hybrid gate drivers and DC to DC converters to provide efficient switching of modules rated up to 400A.
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2500VRMS
VLA500-01
VLA502-01
schematic diagram 24Vdc 5A regulator
SCHEMATIC transformer drive IGBT
M57959
M57962
VLA504-01
M57962L
VLA5020
VLA106-15242
VLA-504-01
M57959L
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Three phase inverter mosfet Diagram
Abstract: M81712FP high voltage diode module Thermal Shut Down Functioned IGBT washing machine block diagram three phase IGBT Bridge
Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81712FP HIGH VOLTAGE THREE PHASE BRIDGE DRIVER DESCRIPTION M81712FP is high voltage Power MOSFET and IGBT module driver for THREE PHASE bridge applications. PIN CONFIGURATION TOP VIEW FEATURES ¡FLOATING SUPPLY VOLTAGE . 600V
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M81712FP
M81712FP
200mA/-500mA
28Pin
Three phase inverter mosfet Diagram
high voltage diode module
Thermal Shut Down Functioned IGBT
washing machine block diagram
three phase IGBT Bridge
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m57962l
Abstract: VLA-504-01 igbt desaturation driver schematic M57959L VLA502-01 M57962 BG2B VLA502 M57159L-01 VLA106-15242
Text: Application First Release: April 1, 2005 NOTES: BG2B – Universal Gate Drive Prototype Board Description: The BG2B is a two channel gate drive circuit for high power IGBT modules. The BG2B utilizes Powerex hybrid gate drivers and DC to DC converters to provide efficient switching of modules rated up to 400A.
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2500VRMS
VLA500-01
VLA502-01
m57962l
VLA-504-01
igbt desaturation driver schematic
M57959L
M57962
BG2B
VLA502
M57159L-01
VLA106-15242
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TA8316AS
Abstract: TA8316 igbt gate drive circuits
Text: TOSHIBA TENTATIVE TA8316AS TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8316AS IGBT GATE DRIVER TA8316AS is a dedicated IC integrating IGBT gate drive circuits on a single chip. A high current directly drives IGBT. FEATURES • Can directly control from a microcontroller
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TA8316AS
TA8316AS
-200mA
961001EBA1
98TYP
TA8316
igbt gate drive circuits
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TA8316
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TA8316AS TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A 8 3 1 6 AS IGBT GATE DRIVER TA8316AS is a dedicated IC integrating IGBT gate drive circuits on a single chip. A high current directly drives IGBT. FEATURES • Can directly control from a microcontroller
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TA8316AS
TA8316AS
-200mA
961001EBA1
TA8316
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Untitled
Abstract: No abstract text available
Text: TA8316AS TOSHIBA TENTATIVE TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8316AS IGBT GATE DRIVER TA8316AS is a dedicated IC integrating IGBT gate drive circuits on a single chip. A high current directly drives IGBT. FEATURES • Can directly control from a microcontroller
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TA8316AS
TA8316AS
-200m
961001EBA1
98TYP
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igbt gate drive circuits
Abstract: TA8316AS
Text: TO SH IBA TENTATIVE TA8316AS TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8316AS IGBT GATE DRIVER TA8316AS is a dedicated IC integrating IGBT gate drive circuits on a single chip. A high current directly drives IGBT. FEATURES • Can directly control from a microcontroller
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TA8316AS
316AS
TA8316AS
-200mA
igbt gate drive circuits
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HC 5301
Abstract: SMD 5730 HCPL-6251 SMD TRANSISTOR js t hcpl-6750 HCPL530Q "Optical Coupler" optocoupler smd HCPL-5231 j 6 smd transistor
Text: Device Part No. Functional Diagram L HCPL530Q 1/ n n J Config uration 8-Pin DIP - Max. Description Intelligent Power Module and Gate Drive Interface Application • prop IPM isolation, 0.65 ps Isolated IGBT/ MOSFET gate drive, AC and brushless DC motor drives,
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HCPL530Q
HCPl-5301
5962-9685201HPX
Mil-Prf-38534
HCPL-530K.
HCPL-6551
PL-6650
HCPL-6651
HCPL-6730
HCPL-6731
HC 5301
SMD 5730
HCPL-6251
SMD TRANSISTOR js t
hcpl-6750
"Optical Coupler"
optocoupler smd
HCPL-5231
j 6 smd transistor
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