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    PIN DIAGRAM OF IGBT Search Results

    PIN DIAGRAM OF IGBT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TW030Z120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X) Visit Toshiba Electronic Devices & Storage Corporation

    PIN DIAGRAM OF IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SIM6822M

    Abstract: SIM6822 SIM6812 SIM6827M SIM68 SIM6800M SIM6 Diodes Incorporated equivalent part ls3b AT/SIM6822M
    Text: SIM6800M Series High Voltage 3-Phase Motor Driver ICs Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ Description Built-in pre-drive IC MOSFET or IGBT power element Alleviate noise generation by adjusting an internal resistor CMOS compatible input 3.3 V and 5 V


    Original     		PDF SIM6800M 40-pin) E118037 SIM6800M-DS SIM6822M SIM6822 SIM6812 SIM6827M SIM68 SIM6 Diodes Incorporated equivalent part ls3b AT/SIM6822M

    Untitled

    Abstract: No abstract text available
    Text: SIM6800M Series High Voltage 3-Phase Motor Driver ICs Features and Benefits ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ Description Built-in pre-drive IC MOSFET or IGBT power element Alleviate noise generation by adjusting an internal resistor CMOS compatible input 3.3 V and 5 V


    Original     		PDF SIM6800M 40-pin) SIM6800M-DS

    Untitled

    Abstract: No abstract text available
    Text: L6385E High voltage high and low-side driver Datasheet - production data Description DIP-8 The L6385E is a simple and compact high voltage gate driver, manufactured with the BCD “offline” technology, and able to drive a half-bridge of power MOS or IGBT devices. The high-side


    Original     		PDF L6385E L6385E DocID13863

    Untitled

    Abstract: No abstract text available
    Text: L6386AD High voltage high and low-side driver Datasheet - production data Description The L6386AD is a high voltage gate driver, manufactured with the BCD “offline” technology, and able to drive simultaneously one high and one low-side power MOS or IGBT


    Original     		PDF L6386AD L6386AD SO-14 DocID14914

    CHMC IC

    Abstract: CHMC D8316 D8316 chmc LTAGE D831 chmc si1 chmc so2 si103
    Text: Silicore IGBT GATE DRIVER D8316 DESCRIPTION Outline Drawing D8316 is a dedicated IC integrating IGBT gate drive circuit on a sing le chip . A high cu rrent directly drives IGBT . FEATURE z Can directly control fro m a micro controller. z Can directly drive the IGBT gate using a high


    Original     		PDF D8316 D8316 -200mA 5600pF V/50kHz CHMC IC CHMC D8316 chmc LTAGE D831 chmc si1 chmc so2 si103

    Untitled

    Abstract: No abstract text available
    Text: STGIPN3H60A SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Datasheet - production data Applications • 3-phase inverters for motor drives • Dish washers, refrigerator compressors, heating systems, air-conditioning fans,


    Original     		PDF STGIPN3H60A NDIP-26L DocID018958

    STGIPN3H60A

    Abstract: NDIP-26L STGIPN3H60 STMicroelectronics 2905
    Text: STGIPN3H60A SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Features • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ Optimized for low electromagnetic interference


    Original     		PDF STGIPN3H60A NDIP-26L STGIPN3H60A NDIP-26L STGIPN3H60 STMicroelectronics 2905

    STGIPN3H60

    Abstract: 3 phase IGBT inverter
    Text: STGIPN3H60A SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Preliminary data Features • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■


    Original     		PDF STGIPN3H60A NDIP-26L STGIPN3H60 3 phase IGBT inverter

    Untitled

    Abstract: No abstract text available
    Text: YD8316 YOUDA INTEGRATED CIRCUIT IGBT GATE DRIVER—YD8316 DESCRIPTION The YD8316 is a dedicated IC integrating IGBT gate drive circuits on a single chip. A high current directly drives IGBT FEATURES *Can directly control from a micro-controller, *Can directly drive the IGBT gate using a high current. Source current: -200mA max , sink current 1A(max),


    Original     		PDF YD8316 YD8316 -200mA

    BG2C-5015

    Abstract: IGBT DRIVER SCHEMATIC VLA513 VLA106-15242 15242 VLA502-01 VLA106-24242 VLA507
    Text: Application First Release: February 20, 2006 NOTES: BG2C – Universal Gate Drive Prototype Board Description: The BG2C is a two channel gate drive circuit designed for use with high frequency optimized IGBT modules. The BG2C utilizes Powerex VLA507 or VLA513 hybrid gate drivers and VLA106 series DC to DC


    Original     		PDF VLA507 VLA513 VLA106 200ns 2500VRMS VLA502-01 BG2C-5015 IGBT DRIVER SCHEMATIC VLA106-15242 15242 VLA106-24242

    VLA513

    Abstract: BG2C OPTOCOUPLER, POWER, 5A DC, 24VDC CONTROL 15242 BG2C-5015 VLA106-15242 VLA106-24242 VLA507 powerex igbt high speed opto coupler
    Text: Application First Release: February 20, 2006 NOTES: BG2C – Universal Gate Drive Prototype Board Description: The BG2C is a two channel gate drive circuit designed for use with high frequency optimized IGBT modules. The BG2C utilizes Powerex VLA507 or VLA513 hybrid gate drivers and VLA106 series DC to DC


    Original     		PDF VLA507 VLA513 VLA106 200ns 2500VRMS VLA502-01 BG2C OPTOCOUPLER, POWER, 5A DC, 24VDC CONTROL 15242 BG2C-5015 VLA106-15242 VLA106-24242 powerex igbt high speed opto coupler

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UA8316 Preliminary LINEAR INTEGRATED CIRCUIT IGBT GATE DRIVER „ DESCRIPTION Integrating IGBT gate drive circuits on a single chip, The UTC UA8316 is a dedicated IC and a high current can directly drive IGBT. „ FEATURES * A high current can directly drive IGBT


    Original     		PDF UA8316 UA8316 -200mA UA8316L-G07-T UA8316G-G07-T QW-R122-010

    NDIP-26L

    Abstract: GIPN3H60A STGIPN3H60 3 phase IGBT inverter AN4043 EB1 marking STGIPN3H60A gipn3h60
    Text: STGIPN3H60A SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Datasheet − production data Features • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes


    Original     		PDF STGIPN3H60A NDIP-26L NDIP-26L GIPN3H60A STGIPN3H60 3 phase IGBT inverter AN4043 EB1 marking STGIPN3H60A gipn3h60

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81712FP HIGH VOLTAGE THREE PHASE BRIDGE DRIVER DESCRIPTION M81712FP is high voltage Power MOSFET and IGBT module driver for THREE PHASE bridge applications. PIN CONFIGURATION TOP VIEW FEATURES ¡FLOATING SUPPLY VOLTAGE . 600V


    Original     		PDF M81712FP M81712FP 200mA/-500mA 28Pin

    Untitled

    Abstract: No abstract text available
    Text: Application Second Release: July 10, 2012 NOTES: BG2C – Universal Gate Drive Prototype Board Description: The BG2C is a two channel gate drive circuit designed for use with high frequency optimized IGBT modules. The BG2C utilizes Powerex VLA507 or VLA513 hybrid gate drivers and VLA106 series DC to DC


    Original     		PDF VLA507 VLA513 VLA106 200ns 2500VRMS 100nd VLA502-01

    Untitled

    Abstract: No abstract text available
    Text: STGIPN3H60A SLLIMM -nano small low-loss intelligent molded module IPM, 3 A - 600 V 3-phase IGBT inverter bridge Datasheet − production data Features • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes


    Original     		PDF STGIPN3H60A NDIP-26L

    schematic diagram 24Vdc 5A regulator

    Abstract: SCHEMATIC transformer drive IGBT M57959 M57962 VLA504-01 M57962L VLA5020 VLA106-15242 VLA-504-01 M57959L
    Text: Application Second Release: July 10, 2012 NOTES: BG2B – Universal Gate Drive Prototype Board Description: The BG2B is a two channel gate drive circuit for high power IGBT modules. The BG2B utilizes Powerex hybrid gate drivers and DC to DC converters to provide efficient switching of modules rated up to 400A.


    Original     		PDF 2500VRMS VLA500-01 VLA502-01 schematic diagram 24Vdc 5A regulator SCHEMATIC transformer drive IGBT M57959 M57962 VLA504-01 M57962L VLA5020 VLA106-15242 VLA-504-01 M57959L

    Three phase inverter mosfet Diagram

    Abstract: M81712FP high voltage diode module Thermal Shut Down Functioned IGBT washing machine block diagram three phase IGBT Bridge
    Text: MITSUBISHI SEMICONDUCTORS <HVIC> M81712FP HIGH VOLTAGE THREE PHASE BRIDGE DRIVER DESCRIPTION M81712FP is high voltage Power MOSFET and IGBT module driver for THREE PHASE bridge applications. PIN CONFIGURATION TOP VIEW FEATURES ¡FLOATING SUPPLY VOLTAGE . 600V


    Original     		PDF M81712FP M81712FP 200mA/-500mA 28Pin Three phase inverter mosfet Diagram high voltage diode module Thermal Shut Down Functioned IGBT washing machine block diagram three phase IGBT Bridge

    m57962l

    Abstract: VLA-504-01 igbt desaturation driver schematic M57959L VLA502-01 M57962 BG2B VLA502 M57159L-01 VLA106-15242
    Text: Application First Release: April 1, 2005 NOTES: BG2B – Universal Gate Drive Prototype Board Description: The BG2B is a two channel gate drive circuit for high power IGBT modules. The BG2B utilizes Powerex hybrid gate drivers and DC to DC converters to provide efficient switching of modules rated up to 400A.


    Original     		PDF 2500VRMS VLA500-01 VLA502-01 m57962l VLA-504-01 igbt desaturation driver schematic M57959L M57962 BG2B VLA502 M57159L-01 VLA106-15242

    TA8316AS

    Abstract: TA8316 igbt gate drive circuits
    Text: TOSHIBA TENTATIVE TA8316AS TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8316AS IGBT GATE DRIVER TA8316AS is a dedicated IC integrating IGBT gate drive circuits on a single chip. A high current directly drives IGBT. FEATURES • Can directly control from a microcontroller


    OCR Scan     		PDF TA8316AS TA8316AS -200mA 961001EBA1 98TYP TA8316 igbt gate drive circuits

    TA8316

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TA8316AS TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A 8 3 1 6 AS IGBT GATE DRIVER TA8316AS is a dedicated IC integrating IGBT gate drive circuits on a single chip. A high current directly drives IGBT. FEATURES • Can directly control from a microcontroller


    OCR Scan     		PDF TA8316AS TA8316AS -200mA 961001EBA1 TA8316

    Untitled

    Abstract: No abstract text available
    Text: TA8316AS TOSHIBA TENTATIVE TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8316AS IGBT GATE DRIVER TA8316AS is a dedicated IC integrating IGBT gate drive circuits on a single chip. A high current directly drives IGBT. FEATURES • Can directly control from a microcontroller


    OCR Scan     		PDF TA8316AS TA8316AS -200m 961001EBA1 98TYP

    igbt gate drive circuits

    Abstract: TA8316AS
    Text: TO SH IBA TENTATIVE TA8316AS TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8316AS IGBT GATE DRIVER TA8316AS is a dedicated IC integrating IGBT gate drive circuits on a single chip. A high current directly drives IGBT. FEATURES • Can directly control from a microcontroller


    OCR Scan     		PDF TA8316AS 316AS TA8316AS -200mA igbt gate drive circuits

    HC 5301

    Abstract: SMD 5730 HCPL-6251 SMD TRANSISTOR js t hcpl-6750 HCPL530Q "Optical Coupler" optocoupler smd HCPL-5231 j 6 smd transistor
    Text: Device Part No. Functional Diagram L HCPL530Q 1/ n n J Config­ uration 8-Pin DIP - Max. Description Intelligent Power Module and Gate Drive Interface Application • prop IPM isolation, 0.65 ps Isolated IGBT/ MOSFET gate drive, AC and brushless DC motor drives,


    OCR Scan     		PDF HCPL530Q HCPl-5301 5962-9685201HPX Mil-Prf-38534 HCPL-530K. HCPL-6551 PL-6650 HCPL-6651 HCPL-6730 HCPL-6731 HC 5301 SMD 5730 HCPL-6251 SMD TRANSISTOR js t hcpl-6750 "Optical Coupler" optocoupler smd HCPL-5231 j 6 smd transistor