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    PIN CONFIGURATION OF TRANSISTOR C1815 Search Results

    PIN CONFIGURATION OF TRANSISTOR C1815 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PIN CONFIGURATION OF TRANSISTOR C1815 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pin configuration NPN transistor 2sc1815

    Abstract: pin configuration of transistor c1815 transistor C1815 C1815 GR c1815 transistor transistor C1815 y C1815 y NPN C1815 Transistor hFE CLASSIFICATION Marking CE c1815 g
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.


    Original     		PDF 2SC1815 2SC1815 C1815 100uAdc, 100mAdc, 10mAdc) 310mAdc) 10Vdc, pin configuration NPN transistor 2sc1815 pin configuration of transistor c1815 transistor C1815 C1815 GR c1815 transistor transistor C1815 y C1815 y NPN C1815 Transistor hFE CLASSIFICATION Marking CE c1815 g

    C1815 NPN Transistor

    Abstract: npn TRANSISTOR c1815 pin configuration of transistor c1815 2SC1815 transistor C1815 y Transistor hFE CLASSIFICATION Marking CE pin configuration NPN transistor 2sc1815 2SC1815 GR c1815 g
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.


    Original     		PDF 2SC1815 2SC1815 C1815 100uAdc, 310mAdc) 60Vdc, 50Vdc, 100mAdc, 10mAdc) C1815 NPN Transistor npn TRANSISTOR c1815 pin configuration of transistor c1815 transistor C1815 y Transistor hFE CLASSIFICATION Marking CE pin configuration NPN transistor 2sc1815 2SC1815 GR c1815 g

    pin configuration NPN transistor 2sc1815

    Abstract: pin configuration of transistor c1815 C1815 GR 2SC1815 2SC1815 DATASHEET c1815 C1815 equivalent c1815 transistor C1815 y transistor C1815 y
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.


    Original     		PDF 2SC1815 2SC1815 C1815 100uAdat) 100mAdc, 10mAdc) 310mAdc) 10Vdc, pin configuration NPN transistor 2sc1815 pin configuration of transistor c1815 C1815 GR 2SC1815 DATASHEET c1815 C1815 equivalent c1815 transistor C1815 y transistor C1815 y

    pin configuration NPN transistor 2sc1815

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.


    Original     		PDF 2SC1815 2SC1815 C1815 100mAdc, 10mAdc) 310mAdc) 10Vdc, 30MHz) pin configuration NPN transistor 2sc1815

    2SC1815

    Abstract: C1815
    Text: MCC           !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.


    Original     		PDF 2SC1815 2SC1815 C1815 100uAdc, 310mAdc) 60Vdc, 50Vdc, 100mAdc, 10mAdc) C1815

    pin configuration NPN transistor 2sc1815

    Abstract: pin configuration of transistor c1815 2SC1815 npn c1815 C1815 NPN Transistor IC 244 pin configuration 2s*1815 transistor
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications.


    Original     		PDF 2SC1815 2SC1815 C1815 100uAdc, 310mAdc) 60Vdc, 100mAdc, 10mAdc) 10Vdc, pin configuration NPN transistor 2sc1815 pin configuration of transistor c1815 npn c1815 C1815 NPN Transistor IC 244 pin configuration 2s*1815 transistor

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD U9131X Preliminary CMOS IC TONE/PULSE DIALER WITH REDIAL FUNCTION  DESCRIPTION The UTC U9131X series are monolithic ICs that offer the dialing signals in either pulse or tone mode. The UTC U9131X series feature a redial memory.


    Original     		PDF U9131X U9131X OP-18 100mS QW-R502-A34

    W91312

    Abstract: circuit diagram of keypad interface with dtmf W91312N c1815 W91310 1N4004 1N4148
    Text: Preliminary W91312N TONE/PULSE DIALER WITH REDIAL FUNCTION GENERAL DESCRIPTION The W91312N are monolithic ICs that provide the necessary signals for either pulse or tone dialing. The W91312 N feature a redial memory. FEATURES • • • • • • • •


    Original     		PDF W91312N W91312N W91312 18-pin 1N4004 1N4148 100uF C1815 circuit diagram of keypad interface with dtmf c1815 W91310 1N4004 1N4148

    W91312

    Abstract: PT 2299 W91312N circuit diagram of keypad interface with dtmf c1815 1N4004 1N4148 W91310 keyboard to DTMF transistor 9013
    Text: Preliminary W91312N TONE/PULSE DIALER WITH REDIAL FUNCTION GENERAL DESCRIPTION The W91312N are monolithic ICs that provide the necessary signals for either pulse or tone dialing. The W91312 N feature a redial memory. FEATURES • • • • • • • •


    Original     		PDF W91312N W91312N W91312 18-pin 1N4004 1N4148 100uF C1815 PT 2299 circuit diagram of keypad interface with dtmf c1815 1N4004 1N4148 W91310 keyboard to DTMF transistor 9013

    smoke DETECTOR CIRCUIT DIAGRAM

    Abstract: KBR-3.84MS pin configuration NPN transistor c945 NPN
    Text: 一華半導體股份有限公司 SMOKE DETECTOR MOSDESIGN SEMICONDUCTOR CORP. M75210 COST-EFFECTIVE PHOTOELECTRIC SMOKE DETECTOR GENERAL DESCRIPTION The M75210 is a very low-power IC providing all of the required features for a photoelectric type smoke detector. It is


    Original     		PDF M75210 M75210 PIN16 smoke DETECTOR CIRCUIT DIAGRAM KBR-3.84MS pin configuration NPN transistor c945 NPN

    C1815 replacement

    Abstract: c1815 W91440N W91442 W91442N W91443 W91444 W91444G W91445G W91446
    Text: W91440N SERIES 10-MEMORY TONE/PULSE DIALER WITH SAVE FUNCTION GENERAL DESCRIPTION The W91440N series are Si-gate CMOS ICs that provide the necessary signals for either tone or pulse dialing. The W91440N series features save memory and a 10 by 16 digit automatic dialing


    Original     		PDF W91440N 10-MEMORY 1N4004 1N4148 100uF C1815 replacement c1815 W91442 W91442N W91443 W91444 W91444G W91445G W91446

    C1815 replacement

    Abstract: W91434 W91436 tone pulse dialer c1815 W91430N W91432 W91432N W91434G W91435
    Text: W91430N SERIES 13-MEMORY TONE/PULSE DIALER WITH SAVE FUNCTION GENERAL DESCRIPTION The W91430N series are Si-gate CMOS ICs that provide the necessary signals for either tone or pulse dialing. The W91430N series features save memory and a 13 by 16 digit automatic dialing


    Original     		PDF W91430N 13-MEMORY 32-digit 1N4004 1N4148 100uF C1815 replacement W91434 W91436 tone pulse dialer c1815 W91432 W91432N W91434G W91435

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


    Original     		PDF SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649

    secos gmbh

    Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3


    Original     		PDF SC-59 SGSR809-A SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA