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    PHPT60603PY Search Results

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    PHPT60603PY Price and Stock

    Nexperia PHPT60603PYX

    TRANS PNP 60V 3A LFPAK56 PWRSO8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PHPT60603PYX Digi-Reel 205,498 1
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    PHPT60603PYX Cut Tape 205,498 1
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    PHPT60603PYX Reel 204,000 1,500
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    Avnet Americas PHPT60603PYX Reel 12 Weeks 4,500
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    Mouser Electronics PHPT60603PYX 191,568
    • 1 $0.58
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    Verical PHPT60603PYX 9,000 1,500
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    PHPT60603PYX 3,000 1,500
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    PHPT60603PYX 308 77
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    Arrow Electronics PHPT60603PYX 9,000 12 Weeks 1,500
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    PHPT60603PYX 3,000 12 Weeks 1,500
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    Newark PHPT60603PYX Cut Tape 1,655 1
    • 1 $0.137
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    PHPT60603PYX Reel 1,500
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    TME PHPT60603PYX 1
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    Avnet Asia PHPT60603PYX 12 Weeks 4,500
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    Avnet Silica PHPT60603PYX 14 Weeks 1,500
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    Chip One Stop PHPT60603PYX Package 308
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    EBV Elektronik PHPT60603PYX 39,000 14 Weeks 1,500
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    New Advantage Corporation PHPT60603PYX 376,500 1
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    Nexperia PHPT60603PY-QX

    PHPT60603PY-Q/SOT669/LFPAK
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    DigiKey PHPT60603PY-QX Reel 1,500
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    Avnet Americas PHPT60603PY-QX Reel 4,500
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    Mouser Electronics PHPT60603PY-QX
    • 1 $0.62
    • 10 $0.421
    • 100 $0.287
    • 1000 $0.206
    • 10000 $0.166
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    Newark PHPT60603PY-QX Cut Tape 5
    • 1 $0.57
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    • 100 $0.314
    • 1000 $0.21
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    Quest Components PHPT60603PYX 34
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    ComSIT USA PHPT60603PYX 499
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    PHPT60603PY Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PHPT60603PY115 NXP Semiconductors POWER BIPOLAR TRANSISTOR, LFPAK Original PDF
    PHPT60603PYX NXP Semiconductors Transistors (BJT) - Single, Discrete Semiconductor Products, IC TRANS PNP 60V 3A LFPAK56 Original PDF

    PHPT60603PY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603PY 60 V, 3 A PNP high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60603NY.


    Original
    PHPT60603PY OT669 LFPAK56) PHPT60603NY. AEC-Q101 PDF

    PHPT60603NY

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY


    Original
    PHPT60603NY OT669 LFPAK56) PHPT60603PY AECQ-101 PHPT60603NY PDF

    sot669 footprint

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 10 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY


    Original
    PHPT60603NY OT669 LFPAK56) PHPT60603PY AECQ-101 sot669 footprint PDF

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original
    DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143 PDF

    Untitled

    Abstract: No abstract text available
    Text: NXP transistors in LFPAK56 – the true power package for smart efficiency Full power in half the footprint First bipolar transistors in LFPAK/Power-SO8 These high-power bipolar transistors, housed in LFPAK56 Power-SO8 packages, deliver DPAK-like thermal and electrical performance in just half the footprint. Offering reliable,


    Original
    LFPAK56 AEC-Q101 OT223, com/group/12466 PDF

    2n2222 spice model

    Abstract: No abstract text available
    Text: 2N7637-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original
    2N7637-GA 2N7637 8338E-48 0733E-26 73E-10 86E-10 90E-2 2N7637-GA 2n2222 spice model PDF

    Untitled

    Abstract: No abstract text available
    Text: GA05JT03-46 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original
    GA05JT03-46 GA05JT03 8338E-48 0733E-26 16E-10 021E-10 050E-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: GA50JT06-258 Normally – OFF Silicon Carbide Junction Transistor Features •         VDS = 600 V RDS ON = 25 mΩ ID (Tc = 25°C) = 100 A hFE (Tc = 25°C) = 105 Package 225°C maximum operating temperature Gate Oxide Free SiC Switch


    Original
    GA50JT06-258 O-258 GA50JT06 00E-47 26E-26 3989E-9 026E-09 00E-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7640-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch


    Original
    2N7640-GA 2N7640 8338E-48 0733E-26 2281E-10 33957E-9 20E-03 2N7640-GA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original
    2N7635-GA 2N7635 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7635-GA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7639-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 60 mΩ ID (Tc = 25°C) = 32 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original
    2N7639-GA 2N7639-GA 8338E-48 0733E-26 2281E-10 33957E-9 20E-03 PDF

    diode 0A70

    Abstract: GA05JT01-46
    Text: GA05JT01-46 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original
    GA05JT01-46 GA05JT01 8338E-48 0733E-26 16E-10 021E-10 050E-2 diode 0A70 GA05JT01-46 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7638-GA Normally – OFF Silicon Carbide Junction Transistor VDS = 600 V RDS ON = 170 mΩ ID (Tc = 25°C) = 20 A hFE (Tc = 25°C) = Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate


    Original
    2N7638-GA 2N7638 8338E-48 0733E-26 73E-10 86E-10 90E-2 2N7638-GA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7636-GA Normally – OFF Silicon Carbide Junction Transistor Features Package •           RoHS Compliant 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area


    Original
    2N7636-GA 2N7636 8338E-48 0733E-26 37E-10 97E-10 50E-02 2N7636-GA PDF