Infrared Phototransistor
Abstract: "infrared phototransistor" all datasheet phototransistor QEE213 QSE213C QSE214C
Text: QSE213C/QSE214C Plastic Silicon Infrared Phototransistor Features Description • ■ ■ ■ ■ ■ The QSE213C/QSE214C is a silicon phototransistor encapsulated in a medium angle, infrared transparent, clear thin plastic sidelooker package. NPN Silicon Phototransistor
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QSE213C/QSE214C
QSE213C/QSE214C
QEE213
Infrared Phototransistor
"infrared phototransistor"
all datasheet phototransistor
QEE213
QSE213C
QSE214C
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MOC256
Abstract: MOC256M
Text: AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOC256-M DESCRIPTION The MOC256 is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector.
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MOC256-M
MOC256
E90700
MOC256V-M)
MOC256M
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Infrared Phototransistor
Abstract: QEE213 QSE213 QSE214
Text: QSE213/QSE214 Plastic Silicon Infrared Phototransistor Features Description • ■ ■ ■ ■ ■ The QSE213/QSE214 is a silicon phototransistor encapsulated in a medium angle, infrared transparent, black thin plastic sidelooker package. NPN Silicon Phototransistor
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QSE213/QSE214
QSE213/QSE214
QEE213
Infrared Phototransistor
QEE213
QSE213
QSE214
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mil 43
Abstract: phototransistor datasheet MTLC0124
Text: MTLC0124 Phototransistor Chips High Gain Phototransistor Device Structure Base Electrode 2.6mil X 2.6 mil 1. NPN Phototransistor 2. Planar Type Active Area 3. Electrodes: 3.1 N (Collector) : Gold Alloy 3.2 P (Base): Aluminum Alloy 3.3 N (Emitter): Aluminum alloy
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MTLC0124
mil 43
phototransistor datasheet
MTLC0124
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Untitled
Abstract: No abstract text available
Text: QSB363 / QSB363GR / QSB363YR / QSB363ZR Subminiature Plastic Silicon Infrared Phototransistor Features Description • • • • • • • • The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. NPN Silicon Phototransistor
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QSB363
QSB363GR
QSB363YR
QSB363ZR
QEB363
QEB373
QSB363
QSB363GR
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MOC256-M
Abstract: MOC256M
Text: AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOC256-M DESCRIPTION The MOC256-M is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector.
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MOC256-M
MOC256-M
E90700,
MOC256V-M)
MOC256M
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phototransistor datasheet
Abstract: MTLC0140-9
Text: MTLC0140-9 Data Sheet Phototransistor Chips High Gain Phototransistor Device Structure Base Electrode 1. NPN Phototransistor 2. Planar Type Active Area 3. Electrodes: 3.1 N Collector : Aluminum alloy (Front Side) Gold Alloy-(Back Side) 3.2 P (Base): Aluminum Alloy
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MTLC0140-9
phototransistor datasheet
MTLC0140-9
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high resolution phototransistor
Abstract: phototransistor datasheet OPT6794 Phototransistor
Text: Phototransistor OPT6794 DIMENSIONS Unit:mm 5.7 5.0 The OPT6794 is a high-sensitivity NPN silicon phototransistor mounted in a clear plastic package. With lensed package this small phototransistor is designed to optimize the mechanical resolution coupling efficiency, cost and reliability.
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OPT6794
OPT6794
1000LUX
2000LUX
high resolution phototransistor
phototransistor datasheet
Phototransistor
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MOC256M
Abstract: No abstract text available
Text: AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOC256-M DESCRIPTION The MOC256-M is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector.
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MOC256-M
MOC256-M
E90700,
MOC256V-M)
MOC256M
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phototransistor 3 pin
Abstract: Infrared emitter MOC256-M MOC256M
Text: AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOC256-M DESCRIPTION The MOC256-M is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector.
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MOC256-M
MOC256-M
E90700,
MOC256V-M)
phototransistor 3 pin
Infrared emitter
MOC256M
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PHOTOTRANSISTOR 3 PIN
Abstract: Infrared emitter infrared emitters and detectors MOC256-M
Text: AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOC256-M DESCRIPTION The MOC256-M is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector.
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MOC256-M
MOC256-M
E90700,
MOC256V-M)
PHOTOTRANSISTOR 3 PIN
Infrared emitter
infrared emitters and detectors
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Untitled
Abstract: No abstract text available
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT277 PACKAGE DIMENSIONS DESCRIPTION! The MCT277 ¡s a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.
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MCT277
E50151
C1686
C1679
C1243
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Untitled
Abstract: No abstract text available
Text: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT270 PACKAGE DIMENSIONS DESCRIPTIO N The MCT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor. WWW
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MCT270
MCT270
E90700
ST1603A
C1682
C1681
C1683
C1685
C1296A
74bfc
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Untitled
Abstract: No abstract text available
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT270 PACKAGE DIMENSION! DESCRIPTION The M CT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.
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MCT270
MCT270
2500VAC
3000VAC
E50151
C2090
C1681
C1682
C1683
C1684
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Untitled
Abstract: No abstract text available
Text: OPTOELECTRONICS I PHOTOTRANSISTOR OPTOCOUPLER MCT271 DESCRIPTION PACKAGE DIMENSIONS db & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.
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MCT271
MCT271
E90700
C1682
C1681
C1683
C1684
C1296A
74bbfl51
C1294
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C1685 transistor
Abstract: transistor c1684 C1681 C2079 KJh transistor TRANSISTOR C1685 C1679 C1680 C1686 MCT271
Text: [ S PHOTOTRANSISTOR OPTOCOUPLER U OPTOELECTRONICS MCT271 DESCRIPTION PACKAGE DIMENSIONS & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor.
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MCT271
ST1603A
C2079
E90700
C1682
C1683
C1684
C1685
C1296A
C1685 transistor
transistor c1684
C1681
C2079
KJh transistor
TRANSISTOR C1685
C1679
C1680
C1686
MCT271
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C1681
Abstract: transistor c1684 c1685 NPN C1685 transistor t051
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT272 PACKAGE DIMENSION! The MCT272 is a phototransistor-type optically coupled Isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r ~ 6.86 6.35
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MCT272
MCT272
Ratio--75%
time--10
E50151
C2090
C1683
C1684
C1294
C1681
transistor c1684
c1685
NPN C1685
transistor t051
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C1243
Abstract: C2090
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS MCT276 PACKAGE IENSIONS The MCT276 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode Is selectively coupled with a high speed NPN silicon phototransistor. r~ 6.86
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MCT276
MCT276
E5015CAL
C1686
C1679
C1680
C1243
C1243
C2090
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TIL111
Abstract: C1681
Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOISOLATOR TIL111 DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is
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TIL111
TIL111
E50151
C2079
C1686
C1679
C1680
C1681
C1682
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C1684
Abstract: C1683 C1681 transistor c1684 C1684 transistor transistor c1682 C1296A
Text: C sö PHOTOTRANSISTOR OPTOCOUPLER DPTDELECîHGNiCS 1 MCT271 PACKAGE DIMENSIONS DESCRIPTION The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor.
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MCT271
MCT271
E90700
C1682
C1681
C1683
C1684
C1296A
transistor c1684
C1684 transistor
transistor c1682
C1296A
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Untitled
Abstract: No abstract text available
Text: su PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is
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TIL111
TIL111
E90700
ST1603A
C2079
74bbfiÂ
C1684
C1683
C1685
C1294
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TIL111
Abstract: No abstract text available
Text: PHOTOTRANSISTOR OPTOISOLATOF OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type o ptically coupled isolator. An infrared em itting diode m anufactured from specially grow n gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is
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TIL111
TIL111
ST1603A
C2079
C1686
C1679
C1680
C1682
C1681
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WPTS-520D
Abstract: uv phototransistor C 520D 520D c 5802 transistor
Text: Photo Transistor Waitrony Module No.: WPTS-520D 1. General Description: The WPTS-520D is a high sensitivity NPN silicon phototransistor mounted in a 05mm black epoxy resin package. With daylight filter, this phototransistor is only sensitive to infrared rays. This phototransistor
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WPTS-520D
WPTS-520D
uv phototransistor
C 520D
520D
c 5802 transistor
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c 5802 transistor
Abstract: IAO5 Waitrony IE-2 WPTS-510D Rise time of photo transistor
Text: Photo Transistor Waitrony Module No.: WPTS-510D 1. General Description: The WPTS-510D is a high sensitivity NPN silicon phototransistor mounted in a 05mm black epoxy resin package. With daylight filter, this phototransistor is only sensitive to infrared rays. This phototransistor
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WPTS-510D
WPTS-510D
c 5802 transistor
IAO5
Waitrony IE-2
Rise time of photo transistor
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