phototransistor blue light
Abstract: GB-PT224A21C GB-PT224A21DB GB-PT224 GB-PT224A21BT phototransistor 940nm
Text: GB-PT224 SERIES Phototransistor 3mm DESCRIPTION: PACKAGE DIMENSIONS The PT224 series consists of a NPN silicon phototransistor encapsulated in blue transparent, dark blue or water clear plastic package. The dark blue plastic package which cuts the visible light is suitable for the detection
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GB-PT224
PT224
100mW
-40oC
-55oC
100oC
940nm
phototransistor blue light
GB-PT224A21C
GB-PT224A21DB
GB-PT224A21BT
phototransistor 940nm
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Phototransistor 5mm
Abstract: phototransistor blue light PT333 GB-PT333 GB-PT333A21BT GB-PT333A21C GB-PT333A21DB GB-PT333A22BT GB-PT333A22C GB-PT333A22DB
Text: GB-PT333 SERIES Phototransistor 5mm DESCRIPTION: PACKAGE DIMENSIONS The PT333 series consists of a NPN silicon phototransistor encapsulated in blue transparent, dark blue or water clear plastic package. The dark blue plastic package which cuts the visible light is suitable for the detection
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GB-PT333
PT333
100mW
-40oC
-55oC
100oC
940nm
Phototransistor 5mm
phototransistor blue light
GB-PT333A21BT
GB-PT333A21C
GB-PT333A21DB
GB-PT333A22BT
GB-PT333A22C
GB-PT333A22DB
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phototransistor blue light
Abstract: GB-PT333 GB-PT333A21BT GB-PT333A21C GB-PT333A21DB GB-PT333A22BT GB-PT333A22C GB-PT333A22DB GB-PT333B21BT GB-PT333B21C
Text: GB-PT333 SERIES Globe Technology Component DESCRIPTION: Phototransistor 5mm PACKAGE DIMENSIONS The PT333 series consists of a NPN silicon phototransistor encapsulated in blue transparent, dark blue or water clear plastic package. The dark blue plastic package which cuts the visible light is suitable for the detection
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GB-PT333
PT333
100mW
-40oC
-55oC
100oC
940nm
phototransistor blue light
GB-PT333A21BT
GB-PT333A21C
GB-PT333A21DB
GB-PT333A22BT
GB-PT333A22C
GB-PT333A22DB
GB-PT333B21BT
GB-PT333B21C
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XRHF51BFR
Abstract: XRNI82B
Text: Phototransistor 2.5x5mm XRNI82B Phototransistor Blue Transparent Lens Absolute Maximum Rating TA =25°° C Collector-to-Emitter Breakdown Voltage . 30V Emitter-to-Collector Breakdown Voltage . 5V
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XRNI82B
100mW
100uA
940nm
08mW/cm
XRHF51BFR
XRNI82B
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GL480E00000F
Abstract: No abstract text available
Text: PT481E00000F PT481E00000F Pale Blue Transparent Resin, Narrow Angle, Darlington Phototransistor • Features ■ Agency Approvals/Compliance 1. 2. 3. 4. 5. 6. 1. Compliant with RoHS directive 2002/95/EC 2. Content information about the six substances specified in “Management Methods for Control of
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PT481E00000F
2002/95/EC)
D1-A01301EN
GL480E00000F
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Rise time of photo transistor
Abstract: PNZ1270
Text: Phototransistors PNZ1270 Silicon NPN Phototransistor Unit : mm For optical control systems 0.5±0.1 Features High sensitivity Type number : Emitter mark Blue 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 ø1.8 0.85 ± 0.15 ea s ht e v tp is :// it pa fo na llo so win
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PNZ1270
Rise time of photo transistor
PNZ1270
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Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ1270 Silicon NPN Phototransistor Unit : mm For optical control systems ø1.8 M Di ain sc te on na tin nc ue e/ d 0.5±0.1 Features Type number : Emitter mark Blue 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 High sensitivity di p Pl lan nclu
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PNZ1270
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PNZ1270
Abstract: No abstract text available
Text: Phototransistors PNZ1270 Silicon NPN Phototransistor Unit : mm For optical control systems 0.5±0.1 Features High sensitivity Type number : Emitter mark Blue 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 ø1.8 0.15 R0.9 0.85 ± 0.15 2.8±0.2 Small size designed for easier mounting to printed circuit board
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PNZ1270
2856K
PNZ1270
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PNZ1270
Abstract: No abstract text available
Text: Phototransistors PNZ1270 Silicon NPN Phototransistor Unit : mm Type number : Emitter mark Blue 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 M Di ain sc te on na tin nc ue e/ d For optical control systems 0.5±0.1 Features High sensitivity ø1.8 0.85 ± 0.15 Absolute Maximum Ratings (Ta = 25˚C)
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PNZ1270
PNZ1270
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OPB704WZ
Abstract: OPB705 OPB704 REFLECTIVE SENSOR OPB Sensor OPB OPB703 OPB70DWZ
Text: Reflective Object Sensor OPB703, OPB704, OPB705 OPB703WZ, OPB704WZ, OPB705WZ, OPB70AWZ, OPB70BWZ, OPB70CWZ, OPB70DWZ Features: • • • • Phototransistor output High sensitivity Low-cost plastic housing Available with lenses for dust protection and ambient light filtration
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OPB703,
OPB704,
OPB705
OPB703WZ,
OPB704WZ,
OPB705WZ,
OPB70AWZ,
OPB70BWZ,
OPB70CWZ,
OPB70DWZ
OPB704WZ
OPB704
REFLECTIVE SENSOR OPB
Sensor OPB
OPB703
OPB70DWZ
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QSE11X
Abstract: No abstract text available
Text: SIDELOOKER PHOTOTRANSISTOR OPTOELECTBOIdCS QSE113/114 PACKAGE DIMENSIONS 08 DIA. DESCRIPTION The QSE11X family is a silicon phototransistor encapsulated in a wide angle, infrared transparent, dark blue, plastic sidelooker shell package. .050 1.27 FEATURES
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QSE113/114
QSE11X
QEE113
QEE123
ST2148
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Untitled
Abstract: No abstract text available
Text: Sidelooker Phototransistor TECHNOLOGIES QSE112/113/114 DESCRIPTION The QSE11X family is a silicon phototransistor encapsulated in a wide angle, infrared transparent, dark blue, plastic sidelooker shell package. FEATURES * Tight production distribution with 3:1
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QSE112/113/114
QSE11X
EE113
QEE123
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Untitled
Abstract: No abstract text available
Text: SIDELOOKER PHOTOTRANSISTOR OPTOELECTRONICS QSE113/114 PACKAGE DIMENSIONS PESCRIPTU The QSE11X family is a silicon phototransistor encapsulated in a wide angle, infrared transparent, dark blue, plastic sidelooker shell package. FEATURES Tight production distribution with min/max limits.
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QSE113/114
QSE11X
QEE113
QEE123
ST2148
74bbfi51
0GGb30b
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QEE113 IR EMITTER
Abstract: No abstract text available
Text: SIDELOOKER PHOTOTRANSISTOR DFTOELECIHONICS QSE122/123 PACKAGE DIMENSIONS .087 2.22 DESCRIPTION The Q SE12X family is a silicon phototransistor 08 DIA. encapsulated in a wide angle, infrared transparent, dark 11 blue, plastic sidelooker shell package. .050(1.27)
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QSE122/123
SE12X
QEE113
QEE123
51ent
QSE122
QSE123
QEE113 IR EMITTER
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L2A5
Abstract: QSE123
Text: SIDELOOKER PHOTOTRANSISTOR OPTOELECTRONICS QSE122/123 DESCRIPTION PACKAGE DIM ENSIONS T h e Q S E 12X fam ily is a silicon phototransistor encapsulated in a wide angle, infrared transparent, dark blue, plastic sidelooker shell package. FEATURES • High Sensitivity.
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QSE122/123
QEE113
ST2149
L2A5
QSE123
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ST214S
Abstract: No abstract text available
Text: [*o SIDELOOKER PHOTOTRANSISTOR OPTOELECTRONICS QSE113/114 PACKAGE DIMENSIONS DESCRIPTION The QSE11X family is a silicon phototransistor encapsulated in a wide angle, infrared transparent, dark blue, plastic sidelooker shell package. FEATURES • Tight production distribution with min/max limits.
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QSE113/114
QSE11X
QEE113
QEE123
ST214S
ST214S
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Untitled
Abstract: No abstract text available
Text: EU SIDELOOKER PHOTOTRANSISTOR OPTOELECTRONICS QSE122/123 PACKAGE DIMENSIONS DESCRIPTIO N Th e Q SE12X family is a silicon phototransistor encapsulated in a w ide angle, infrared transparent, dark blue, plastic sidelooker shell package. FEA TU RES • High Sensitivity.
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QSE122/123
SE12X
QEE113
ST2149
7MLbfi51
a00b30a
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OP599
Abstract: OP599A OP599B OP599C OP599D be700
Text: 0 . OPTEK Product Bulletin OP599 June 1996 NPN Plastic Silicon Phototransistors Type OP599 Series • Variety of sensitivity ranges • T-1 3/4 package style Description The OP599 series phototransistor consists of an NPN silicon phototransistor mounted in a dark blue
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OP599
othe20
100MA
100HA
D00Sb4D
OP599A
OP599B
OP599C
OP599D
be700
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QEE113
Abstract: QEE123 QSE113 QSE114 phototransistor blue light
Text: SIDELOOKER PHOTOTRANSISTOR OPTOELECTRONICS QSE113/114 PACKAGE DIMENSIONS DESCRIPTION Th e QSE11X fam ily is a silicon phototransistor encapsulated in a w ide angle, infrared transparent, dark blue, plastic sidelooker shell package. FEATURES • Tight production distribution with m in/m ax limits.
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ST2148
QSE113/114
QSE11X
QEE113
QEE123
QSE113
QSE114
phototransistor blue light
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Untitled
Abstract: No abstract text available
Text: 0 . OPTEK Product Bulletin OP599 June 1996 NPN Plastic Silicon Phototransistors Type OP599 Series • Variety of sensitivity ranges • T-1 3/4 package style Description The OP599 series phototransistor consists of an NPN silicon phototransistor mounted in a dark blue
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OP599
OP599
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Untitled
Abstract: No abstract text available
Text: Ì0 O P T E K Product Bulletin OP506W June 1996 NPN Silicon Phototransistor Type OP506W Features • Wide receiving angle • T-1 package style • Small package size for space limited applications Description The OP5CI6W consists of an NPN silicon phototransistor molded in a blue tinted
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OP506W
OP506W
0P280C#
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RHF5
Abstract: No abstract text available
Text: Phototransistor 2.5x5m m RNI82B P hototransistor Blue Transparent Lens A b s o lu te M axim um R ating T a = 25°C Collector-lo-Emitter Breakdown V oltage. 30V Emitter-to-Collector Breakdown V oltage. 5V
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RNI82B
100mW
100uA
940nm
08mW/cm2
RHF5
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Untitled
Abstract: No abstract text available
Text: Panasonic Phototransistors PN127 Silicon NPN Phototransistor U nit: mm For optical control systems Type number : Emitter mark Blue • Features • High sensitivity • Good collector photo current linearity with respect to optical power input • Fast response : tr = 2.5 |^s (typ.)
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PN127
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PN127
Abstract: No abstract text available
Text: Panasonic Phototransistors PN127 Silicon NPN Phototransistor U n it: mm For optical control systems Type number : Emitter mark Blue • Features • High sensitivity • G ood collector photo current linearity with respect to optical pow er input • Fast response : tr = 2.5 |^s (typ.)
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PN127
PN127
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