TLP785GB
Abstract: 11-5L107 TLP785F TLP785 EN60747-5-2 TL-P785 TLP785 TLP78 BR 13005 A
Text: TLP785,TLP785F TOSHIBA Photocoupler GaAs IRED & Photo−Transistor TLP785,TLP785F Office Equipment Household Appliances Solid State Relays Switching Power Supplies Various Controllers Signal Transmission Between Different Voltage Circuits The TOSHIBA TLP785 consists of a silicone phototransistor optically
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TLP785
TLP785F
TLP785F
TLP785.
11-5L1
TLP785:
TLP785GB
11-5L107
TLP785 EN60747-5-2
TL-P785
TLP78
BR 13005 A
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TLP290-4
Abstract: 11-11F1
Text: TLP290-4 Photocouplers GaAs Infrared LED & Photo Transistor TLP290-4 1. Applications • Programmable Logic Controllers PLCs • Switching Power Supplies • Simplex/Multiplex Data Transmission 2. General The Toshiba TLP290-4 consists of phototransistors optically coupled to gallium arsenide infrared emitting diodes.
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TLP290-4
TLP290-4
11-11F1
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ILD252-X009T
Abstract: IL252X001 IL252-X001
Text: IL250, IL251, IL252, ILD250, ILD251, ILD252 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, with Base Connection FEATURES A/C 1 6 B C/A 2 5 C • Built-in reverse polarity input protection NC 3 4 E • Improved CTR symmetry
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IL250,
IL251,
IL252,
ILD250,
ILD251,
ILD252
2002/95/EC
2002/96/EC
i179037-1
UL1577,
ILD252-X009T
IL252X001
IL252-X001
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IL213AT
Abstract: No abstract text available
Text: IL211AT, IL212AT, IL213AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 A 1 8 NC K 2 7 B NC 3 6 C NC 4 5 E FEATURES • Isolation test voltage, 4000 VRMS • Industry standard SOIC-8 surface mountable package • Compatible with dual wave, vapor phase and IR
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IL211AT,
IL212AT,
IL213AT
i179002-1
2002/95/EC
2002/96/EC
i179025
IL213AT
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NTE3041
Abstract: No abstract text available
Text: NTE3041 Optoisolator NPN Transistor Output Description: The NTE3041 is an optoisolator in a 6–Lead DIP type package consisting of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Features: D High Current Transfer Ratio: 100% Min @ Spec Conditions
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NTE3041
526-NTE3041
NTE3041
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SFH617A-2x016
Abstract: SFH617A-4 SFH617A-4-X001 SFH617-A3 SFH617A SFH617A-2-X009 SFH617A-2X001 SFH617A-3X007T SFH617A-3X001
Text: SFH617A www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 5000 VRMS, 110 °C Rated FEATURES A 1 4 C C 2 3 E • Operating temperature from - 55 °C to + 110 °C • Good CTR linearity depending on forward current • Isolation test voltage, 5000 VRMS
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SFH617A
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
SFH617A-2x016
SFH617A-4
SFH617A-4-X001
SFH617-A3
SFH617A
SFH617A-2-X009
SFH617A-2X001
SFH617A-3X007T
SFH617A-3X001
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Application Note 45
Abstract: 83706 74HC04
Text: VISHAY SEMICONDUCTORS www.vishay.com Optocouplers and Solid-State Relays Application Note 45 How to Use Optocoupler Normalized Curves A phototransistor optocoupler provides signal transfer between an isolated input and output via an infrared LED and a silicon NPN phototransistor.
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18-Oct-11
Application Note 45
83706
74HC04
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APA3010P3C
Abstract: No abstract text available
Text: 3. 0mmx1.0mm RIGHT ANGLE PHOTOTRANSISTOR Part Number: APA3010P3C Features Description zMECHANICALLY AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE APA3010 SERIES INFRARED EMITTING LED LAMP. zWATER CLEAR LENS. zPACKAGE : 2000PCS / REEL.
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APA3010P3C
APA3010
2000PCS
DSAF0196
FEB/23/2007
APA3010P3C
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Untitled
Abstract: No abstract text available
Text: NPN-Silizium-Fototransistor Zeilen Silicon NPN Phototransistor Arrays Lead Pb Free Product - RoHS Compliant BPX 80 BPX 82 … 89 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1100 nm • Hohe Linearität • Mehrstellige Zeilenbauform aus klarem Epoxy
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Optocoupler 16 Pin quad sop
Abstract: No abstract text available
Text: SFH6916 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, Quad Channel, SOP-16, Half Pitch Mini-Flat Package i179076-4 FEATURES A 1 16 C C 2 15 E A 3 14 C C 4 13 E A 5 12 C C 6 11 E • Temperature stable A 7 10 C • Low coupling capacitance
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SFH6916
OP-16,
2002/95/EC
2002/96/EC
i179076-4
SFH6916
2011/65/EU
2002/95/EC.
2011/65/EU.
Optocoupler 16 Pin quad sop
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Untitled
Abstract: No abstract text available
Text: TLP1243 C8 TOSHIBA Photo-interrupter Infrared LED + Phototransistor TLP1243(C8) Copiers, Printers and Fax Machines Air-conditioners Game Machines The TLP1243 (C8) is a compact photointerrupter with a built-in connector that uses a GaAs infrared LED and an Si
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TLP1243
TLP1243
TLP1241
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4N35-X001
Abstract: 4N35 application note 4n35 ic
Text: 4N35-X, 4N36-X, 4N37-X, 4N38 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection FEATURES • Isolation test voltage 5000 VRMS • Interfaces with common logic families A 1 6 B C 2 5 C NC 3 4 E • Input-output coupling capacitance < 0.5 pF
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4N35-X,
4N36-X,
4N37-X,
2002/95/EC
2002/96/EC
i179004-14
2011/65/EU
2002/95/EC.
2011/65/EU.
4N35-X001
4N35 application note
4n35 ic
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CNY64C
Abstract: CNY66B
Text: CNY64, CNY65, CNY66 Vishay Semiconductors Optocoupler, Phototransistor Output, Very High Isolation Voltage FEATURES • Rated recurring peak voltage repetitive VIORM = 1450 Vpeak Top View A C CNY64 • Thickness through insulation 3 mm • Creepage current resistance according to
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CNY64,
CNY65,
CNY66
CNY64
0303/IEC
CNY65
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
CNY64C
CNY66B
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Untitled
Abstract: No abstract text available
Text: This component is RoHS compliant OPI-110 Series Optically Coupled Isolators Pb ATEX and IECEx CERTIFIED The OPI-110, A/B/C and D are a family of optically coupled isolators, each consisting of a infrared light emitting diode, coupled to an NPN silicon phototransistor sealed in an injection moulded plastic housing. This series is designed for
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OPI-110
OPI-110,
BAS01ATEX1278U/1
0021U
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TCRT5000 sensor circuit
Abstract: TCST1030 sensor cny70 TCST2202
Text: TCST1030 Vishay Semiconductors Transmissive Optical Sensor with Phototransistor Output FEATURES • Package type: leaded • Detector type: phototransistor • Dimensions L x W x H in mm : 8.3 x 4.7 x 8.15 • Gap (in mm): 3.1 19171_1 • Aperture: none • Typical output current under test: IC = 2.4 mA
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TCST1030
2002/95/EC
2002/96/EC
TCST1030
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
TCRT5000 sensor circuit
sensor cny70
TCST2202
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Optocouplers App Note
Abstract: No abstract text available
Text: TIL191, TILI 92, TIL193, TIL191A, TIL192A, TIL193A TILI 91B, TIL192B, TIL193B OPTOCOUPLERS D 3 2 6 3 , A P R IL 1 9 8 9 - R E V I S E D S E P T E M B E R 1 9 8 9 Gallium Arsenide Diode Infrared Source • Source Is Optically Coupled to Silicon N-P-N Phototransistor
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TIL191,
TIL193,
TIL191A,
TIL192A,
TIL193A
TIL192B,
TIL193B
E65085
TIL191
TIL192
Optocouplers App Note
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Untitled
Abstract: No abstract text available
Text: MCT2, MCT2E OPTOCOUPLERS D 2 7 3 1 , MARCH 1 9 8 3 COMPATIBLE W ITH STANDARD TTL INTEGRATED CIRCUITS Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N-P-N Phototransistor High-Voltage Electrical Isolation or 3 .5 5 -k V Rating 1.5 -kV
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Untitled
Abstract: No abstract text available
Text: GaAs IRED a PHOTO-TRANSISTOR TLP628,-2,-4 TLP628 Unit in mm PROGRAMMABLE CONTROLLERS. DC-OUTPUT MODULE. TELECOMMUNICATION. 4 The TOSHIBA TLP628, -2, and -4 consists of a gallium arsenide infreared emitting diode optically coupled to a phototransistor which has a 350V high voltage of collector-emitter breakdown
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TLP628
TLP628)
TLP628,
TLP628-4
5000Vrms
UL1577,
E67349
TLP628-4
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TLP641G
Abstract: No abstract text available
Text: D e I ^ O T T S S D 00174^0 T | ~ TOSHIBA {DISCRETE/OPTO! 99D 9097250 TOSHIBA <DISCRETE/OPTO 17498 D T-V/-S7 TLP64 I G GaAs I RED & P H O T O - T H Y R I STOR The TOSHIBA TLP641G consists of a photothyristor optically coupled to a gallium arsenide infrared emitting diode in a.six
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TLP64
TLP641G
150mA
E67349
100ys
D017SD0
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Untitled
Abstract: No abstract text available
Text: T e m ic TCET1600 up to TCET4600 Semiconductors Optocoupler with Phototransistor Output Description The TCET1600/ TCET2600/ TCET4600 consist of a phototransistor optically coupled to 2 gallium arsenide inffared-emitting diodes in a 4-lead up to 16-lead plastic
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TCET1600
TCET4600
TCET1600/
TCET2600/
TCET4600
16-lead
D-74025
04-Dec-97
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TI-131
Abstract: No abstract text available
Text: OPTEK TECHNOLOGY INC ObE D | L ^ Ö S ä O 0000154 7 | Op to electron ics- D iv is io n • J i g T R W Electronic Components Group Product Bulletin 5 114 January 1985 _ m - IMPIU Silicon Phototransistors Types OP509, OP509SLD, OP509SLC .030 0.79 NOW RA0ÍUS U K
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OP509,
OP509SLD,
OP509SLC
DP189SL
0P269SL
TI-131
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TIL81
Abstract: Phototransistor til 81 TIL 81 ir 4021 Phototransistor 4021
Text: ma SILICON PHOTOTRANSISTOR 61058 TYPE GS 4021 GENERAL DESCRIPTION OPTOELECTRONIC PRODUCTS DIVISION (REPLACES TIL 81) HIGH SENSITIVITY TO-46 HERMETIC PACKAGE Mii 61058 is an N-P-N Silicon Phototransistor in a lensed TO-46 three-lead package. It is available
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MIL-S-19500.
TIL81
Phototransistor til 81
TIL 81
ir 4021
Phototransistor 4021
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Untitled
Abstract: No abstract text available
Text: TLP628,-2,-4 GaAs IRED & PHOTO-TRANSISTOR T LP 62B I P R O G R A M M A B L E C ONTROLLERS. D C -O U T P U T M O D U L E . T E L E C O M M U N IC A T IO N . The TOSHIBA TLP628, -2, and -4 consists of a gallium arsenide infreared emitting diode optically coupled to a phototransistor
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TLP628
TLP628,
5000Vrms
UL1577,
E67349
TLP628-4
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4N23
Abstract: No abstract text available
Text: 4N22A, 4N23A, 4N24A OPTOCOUPLERS D 3 0 5 5 , AUGUST 1987 JEDEC REGISTERED DEVICES GALLIUM ARSENIDE DIODE INFRARED SOURCE OPTICALLY COUPLED TO A HIGH-GAIN N-P-N SILICON PHOTOTRANSISTOR • Both Input and Output Circuits Are Isolated from the Can • JAN, JAN TX, JAN TXV Versions Available
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4N22A,
4N23A,
4N24A
4N24A)
4N23
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