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    PHOTON-COUPLED TRANSISTOR IR 15 Search Results

    PHOTON-COUPLED TRANSISTOR IR 15 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PHOTON-COUPLED TRANSISTOR IR 15 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NTE3102

    Abstract: No abstract text available
    Text: NTE3102 Photon Coupled Interrupter Module NPN Transistor Description: The NTE3102 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical


    Original     		NTE3102 NTE3102 PDF

    mst8120

    Abstract: No abstract text available
    Text: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Circuit Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers Home Page


    Original     		MST81 mst8120 PDF

    Untitled

    Abstract: No abstract text available
    Text: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Circuit Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers Home Page


    Original     		IS21-1A, IS21-1B, IS21-1C IS21-1 IS21-1A IS21-1B IS21-1A: PDF

    ball mouse

    Abstract: H21A
    Text: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Circuit Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers Home Page


    Original     		H21A1, H21A2, H21A3 H22A1, H22A2, H22A3 ball mouse H21A PDF

    Untitled

    Abstract: No abstract text available
    Text: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Circuit Features Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers Home Page


    Original     		H24B1-H24B2 H24B1/H24B2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Circuit Features Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers Home Page


    Original     		H24A1-H24A2 H24A1/H24A2 10kohm PDF

    is212

    Abstract: No abstract text available
    Text: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Circuit Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers Home Page


    Original     		IS21-2 750ohm 75ohm 75ohm IS21-2A IS21-2B is212 PDF

    ball mouse

    Abstract: No abstract text available
    Text: 1 of 3 Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 Circuit Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers


    Original     		IS21-1A, IS21-1B, IS21-1C IS21-1 IS21-1A IS21-1B IS21-1A: ball mouse PDF

    is212

    Abstract: No abstract text available
    Text: 1 of 4 Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 Circuit Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers


    Original     		IS21-2 IS21-2C 750ohm 75ohm 75ohm is212 PDF

    TRANSISTOR R46

    Abstract: No abstract text available
    Text: IS610X, IS611X IS610, IS611 PHOTON COUPLED BILATERAL ANALOG FET APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form DESCRIPTION The IS610, IS611 are optically coupled isolators consisting of infrared light emitting diode and a


    Original     		IS610X, IS611X IS610, IS611 E91231 IS611 DB91069-AAS/A2 TRANSISTOR R46 PDF

    TRANSISTOR R46

    Abstract: E91231 IS610 IS610X IS611 IS611X
    Text: IS610X, IS611X IS610, IS611 PHOTON COUPLED BILATERAL ANALOG FET APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form DESCRIPTION The IS610, IS611 are optically coupled isolators consisting of infrared light emitting diode and a


    Original     		IS610X, IS611X IS610, IS611 E91231 IS611 DB91069-AAS/A2 TRANSISTOR R46 E91231 IS610 IS610X IS611X PDF

    TRANSISTOR R46

    Abstract: H11F1
    Text: H11F1, H11F2, H11F3 PHOTON COUPLED BILATERAL ANALOG FET APPROVALS l UL recognised, File No. E91231 DESCRIPTION The H11F_ series are optically coupled isolators consisting of infrared light emitting diode and a symmetrical bilateral silicon photodetector. The


    Original     		H11F1, H11F2, H11F3 E91231 DB91018-AAS/A3 TRANSISTOR R46 H11F1 PDF

    TRANSISTOR 2SC 950

    Abstract: phototransistor npn NPN Transistor 5V DARLINGTON transistor 2sc nte 3122 SI 3105 A
    Text: INFRARED EMITTING DIODES NTE Type Number Description Diagram Number typical Total External Radiated Power mW Maximum Forward Voltage (Volta) VF 1.28 Vr 141 Po 15 Typical Peak Emission Wove length DC Forward Current (mA) Power Dlaalpatlon (mW) 6 If 100 Pd


    OCR Scan     		650nW TRANSISTOR 2SC 950 phototransistor npn NPN Transistor 5V DARLINGTON transistor 2sc nte 3122 SI 3105 A PDF

    photon coupled interrupter 3101

    Abstract: photon coupled interrupter photon coupled interrupter nte 3100 npn phototransistor npn photo interrupter module darlington IR phototransistor Si pin photodiode module npn 940 T018 T046
    Text: INFRARED EMITTING DIODES NTE type Number 3017 3027 3028 3029A 3099 30001 Typical Total External Radiated Power mW Diagram Number Description PN Gallium Arsenide Bi-Directional Bi-Directional Maximum Forward Voltage (Volts) Reverse Voltage (Volts) DC Forward


    OCR Scan     		650nW 150nW b4315S^ 0003hl3 photon coupled interrupter 3101 photon coupled interrupter photon coupled interrupter nte 3100 npn phototransistor npn photo interrupter module darlington IR phototransistor Si pin photodiode module npn 940 T018 T046 PDF

    h13b1

    Abstract: ins060 H13A2 4N38 4N38A H11A10 H11AA1 H11AA2 H11B1 H11B2
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100 100 50 50 300 300 100 100 100 100 100 100 100 100 100 100 100


    OCR Scan     		H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 h13b1 ins060 H13A2 4N38 PDF

    photo interrupter module h13a1

    Abstract: H13A1 photo interrupter module DT230B GE SCR 1000 H11C1 4N38 4N38A H11A10 H11AA1
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H 11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 ID nA MAX. BVc e o (VOLTS) MIN. 50 30 I I 100 200 30 30 20'ä I 20% 20% 10% 100 100 100 100 50 50 300 300 100 100 100 100 100 100


    OCR Scan     		H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 photo interrupter module h13a1 H13A1 photo interrupter module DT230B GE SCR 1000 H11C1 4N38 PDF

    a4n33

    Abstract: H11B255 H13A2 H11C1 photo interrupter module photo interrupter module h13a1 4N38 4N38A H11A10 H11AA1
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100 100 50 50 300 300 100 100 100 100 100 100 100 100 100 100 100


    OCR Scan     		H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 a4n33 H11B255 H13A2 H11C1 photo interrupter module photo interrupter module h13a1 4N38 PDF

    photo interrupter module

    Abstract: GE SCR 1000 GE SCR 1000 AMP H11C H13B1 4N38 4N38A H11A10 H11AA1 H11AA2
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER R A TIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? 1500 1500 I I 20% 10% ID nA MAX. BV c e o (VOLTS) MIN. 50 30 100 200 30 30 100 100


    OCR Scan     		H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 photo interrupter module GE SCR 1000 GE SCR 1000 AMP H11C H13B1 4N38 PDF

    SEN 1327

    Abstract: CI06B pnp phototransistor H11A10 1307 TRANSISTOR D34C1 SCR ci06b "Photo Interrupter" dual transistor H11B1 4N38
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 TYPICAL OiSEC.) VCEISAT) MAX. Tr Tf 1 2 2 1 1 2 2 2 2 I 5 1I 55 5 5 5 5 5 5 4 .4 .4 .4 1.0


    OCR Scan     		H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 SEN 1327 CI06B pnp phototransistor 1307 TRANSISTOR D34C1 SCR ci06b "Photo Interrupter" dual transistor 4N38 PDF

    L 3005 TRANSISTOR

    Abstract: transistor 3005 2 transistor 3005 SI 3102 v NPN 200 VOLTS POWER TRANSISTOR photon coupled interrupter nte 3100 npn PHOTO GAP DETECTOR
    Text: typical NTE Type Number Description Typical Peak Emission Wavelength nm Typical Response Time (ns) Diagram Number Total External Radiated Power (mW) Po VF Vr If Pd Xp ton, toff 550|iW 1.5 3 50 75 900 10 Maximum Forward Voltage (Volts) Reverse Voltage (Volts)


    OCR Scan     		PDF

    13001 TRANSISTOR

    Abstract: CNY30 CNY30-CNY34 GE SCR 1000 1000C AN006 CNY34 INS080I4
    Text: G E SOLI» STATE 01 Optoelectronic Specifications DE|3fl750fll OanflBG 0 | T ^ h 3-7 Photon Coupled Isolator CNY30-CNY34 Ga As Infrared Emitting Diode & light Activated SCR The GE Solid State CNY30 and CNY34 consist of a gallium arsenide, infrared emitting diode coupled with a light activated silicon con­


    OCR Scan     		3fl750Ã T-V/-77 CNY30-CNY34 CNY30 CNY34 220VAC 13001 TRANSISTOR CNY30-CNY34 GE SCR 1000 1000C AN006 INS080I4 PDF

    SCR induction furnace circuit diagram

    Abstract: schematic diagram power inverter 1500w schematic diagram inverter 2000w 1200W inverter "circuit diagram" sc146d Triac cross reference scr 106d 12v to 220v inverter schematic diagram 2000w 220v DC MOTOR SPEED CONTROLLER using opto coupler 12 volt dc to 220v ac inverter 1500w schematic diagram solar tracker circuits
    Text: OPTOELECTRONIC CIRCUITS LIGHT DETECTING CIRCUITS L ight detecting circuits are those circuits that cause an action based on the level o f light received by the photo detector. OFF RELAY: 12V , 0 .3 A COIL: 2 0 A , FORM C. CONTACTS OR SOLID-STATE SW ITCHING OF 16A STEADY-STATE 150 A COLD


    OCR Scan     		PDF

    4W0E

    Abstract: SMEW H11C4 H11C5-H11C6 VP243 GE SCR 1000 H11C5 H11C6 400v transistor the light activated scr
    Text: G E SOLID STATE 01 DE J 3ñ7SDñl DOlTOfl b | Optoelectronic Specifications " T -w -s 7 Photon Coupled Isolator H11C4 Ga As Infrared Emitting Diode & Light Activated SCR The GE Solid State H 11C4, H 11C5 and H11C6 are gallium arsenide, infrared emitting diodes coupled with light activated silicon con- j


    OCR Scan     		3fl75DÃ H11C4 H11C5, H11C6^ H11C4, H11C5 33mW/Â 4W0E SMEW H11C4 H11C5-H11C6 VP243 GE SCR 1000 H11C6 400v transistor the light activated scr PDF

    4N38

    Abstract: 4N38A 4N38 A
    Text: G E SOLID STATE 01 Optoelectronic Specifications D E § 3a ? s o a i o o n t a o Photon Coupled Isolator4N38,4N38A The G E Solid State 4N38 and 4N38A consist o f a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line


    OCR Scan     		T-4/-83 Isolator4N38 4N38A E51868 0110b 4N38A_ 4N38 4N38A 4N38 A PDF