avalanche 1550nm photodiode 5 Ghz
Abstract: Photo Diodes 1550nm photodiode 5 Ghz PD893E6 mitsubishi receiver InGaAs Photodiode 1550nm mitsubishi avalanche photodiode ingaas ghz
Text: MITSUBISHI PHOTO DIODES PD8XX6 SERIES InGaAs AVALANCHE PHOTO DIODES PD893E6 Feature DESCRIPTION PD8XX6 Series are InGaAs avalanche photodiodes which has a sensitive area of φ20µm. PD8XX6 is suitable for receiving the light having a wavelength band of 1200 to 1580nm.
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PD893E6
1580nm.
1580nm
avalanche 1550nm photodiode 5 Ghz
Photo Diodes
1550nm photodiode 5 Ghz
PD893E6
mitsubishi receiver
InGaAs Photodiode 1550nm
mitsubishi avalanche photodiode ingaas ghz
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PD8042
Abstract: PD893D2 PD8932 PD893D
Text: MITSUBISHI PHOTO DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES PD8042, PD8932, PD893D2 Feature DESCRIPTION PD8XX2 Series are InGaAs avalanche photodiodes which has a sensitive area of φ50µm. PD8XX2 is suitable for receiving the light having a wavelength band of 1000 to 1600nm.
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PD8042,
PD8932,
PD893D2
1600nm.
1600nm
PD8042
PD8932
PD8042
PD893D2
PD8932
PD893D
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Photo Diodes
Abstract: tia amplifier ghz PD739C13 mitsubishi receiver
Text: MITSUBISHI PHOTO DIODES PD739C13 InGaAs PIN PHOTO DIODES PD739C13 Feature DESCRIPTION PD739C13 is a φ20µm InGaAs pin photodiodes with Trans-Impedance Amplifier TIA . This PD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical
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PD739C13
PD739C13
488G/s,
180um
Photo Diodes
tia amplifier ghz
mitsubishi receiver
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PD8043
Abstract: avalanche 1550nm photodiode 5 Ghz 1550nm photodiode 2 Ghz PD8933 PD893D3 InGaAs Photodiode 1550nm avalanche photodiode ingaas ghz
Text: MITSUBISHI PHOTO DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES PD8043, PD8933, PD893D3 Feature DESCRIPTION PD8XX3 Series are InGaAs avalanche photodiodes which has a sensitive area of φ35µm. PD8XX3 is suitable for receiving the light having a wavelength band of 1000 to 1600nm.
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PD8043,
PD8933,
PD893D3
1600nm.
1600nm
PD8043
avalanche 1550nm photodiode 5 Ghz
1550nm photodiode 2 Ghz
PD8933
PD893D3
InGaAs Photodiode 1550nm
avalanche photodiode ingaas ghz
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Photo Diodes
Abstract: PD739A13 TIA AGC application note tia amplifier ghz TIA application note mitsubishi receiver pin photo diodes
Text: MITSUBISHI PHOTO DIODES PD739A13 InGaAs PIN PHOTO DIODES PD739A13 Feature DESCRIPTION PD739A13 is a φ20µm InGaAs pin photodiodes with Trans-Impedance Amplifier TIA . This PD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical
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PD739A13
PD739A13
10MHz-1
488G/s,
180um
Photo Diodes
TIA AGC application note
tia amplifier ghz
TIA application note
mitsubishi receiver
pin photo diodes
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1300nm
Abstract: PD793D26 PD7XX26 PIN 1300nm pin photo diodes
Text: MITSUBISHI PHOTO DIODES PD7XX26 SERIES InGaAs PIN PHOTO DIODES PD793D26 Feature DESCRIPTION PD793D26 Series are InGaAs pin photodiodes which has a sensitive area of φ 20µm. PD7XX26 is suitable for receving the light having a wavelength band of 1000 to 1600nm.
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PD7XX26
PD793D26
PD793D26
1600nm.
1600nm
1300nm
1300nm,
1300nm
PIN 1300nm
pin photo diodes
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mitsubishi APD
Abstract: PD8* APD Photo Diodes tia amplifier ghz PD839C4 mitsubishi receiver "photo diodes" APD 1550nm PD839C4 equivalent
Text: MITSUBISHI PHOTO DIODES PD839C4 InGaAs AVALANCHE PHOTO DIODES PD839C4 Feature DESCRIPTION PD839C4 is a φ35µm InGaAs Avalanche Photodiodes APD with Trans Impedance Amplifier(TIA). This APD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical
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PD839C4
PD839C4
10MHz-1
488G/s,
180um
mitsubishi APD
PD8* APD
Photo Diodes
tia amplifier ghz
mitsubishi receiver
"photo diodes"
APD 1550nm
PD839C4 equivalent
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Alumina submount
Abstract: PD7087 PD708C7 PD7937 PD793D7 mitsubishi receiver
Text: MITSUBISHI PHOTO DIODES PD7XX7 SERIES InGaAs PIN PHOTO DIODES PD7087, PD708C7, PD7937, PD793D7 Feature DESCRIPTION PD7XX7 Series are InGaAs pin photodiodes which has a sensitive area of φ 40µm. PD7XX7 is suitable for receving the light having a wavelength band of 1000 to 1600nm.
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PD7087,
PD708C7,
PD7937,
PD793D7
1600nm.
1600nm
PD708C7)
PD708C7
PD7937
Alumina submount
PD7087
PD708C7
PD7937
PD793D7
mitsubishi receiver
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mitsubishi APD
Abstract: PD8* APD TIA AGC application note Photo Diodes PD839A4 photo amplifier tia amplifier ghz mitsubishi receiver "photo diodes" APD 1550nm
Text: MITSUBISHI PHOTO DIODES PD839A4 InGaAs AVALANCHE PHOTO DIODES PD839A4 Feature DESCRIPTION PD839A4 is a φ35µm InGaAs Avalanche Photodiodes APD with Trans Impedance Amplifier(TIA). This APD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical
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PD839A4
PD839A4
10MHz-1
488G/s,
mitsubishi APD
PD8* APD
TIA AGC application note
Photo Diodes
photo amplifier
tia amplifier ghz
mitsubishi receiver
"photo diodes"
APD 1550nm
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ia2c
Abstract: No abstract text available
Text: MITSUBISHI InGaAs PHOTODIODES PD8XX1 SERIES FOR OPTICAL COMMUNICATION MITSUBISHI DISCRETE SC TYPE NAME DQIMSM? fi H M I T S " 31E » \ -0 7 • ‘T ' M P D 8001, PD 8931 DESCRIPTION FEATURES The PD8XXÎ series are InGaAs avalanche photodiodes de •
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001425G
55/im
ia2c
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PD7005
Abstract: PD7035 PD7935
Text: MITSUBISHI InGaAs PHOTODIODES P D 7X X 5 MITSUBISHI DISCRETE SC tj24ciô2ci G o m a a s s h i m i t s h 31E D SERIES FOR OPTICA L COMMUNICATION " T TYPE NAME - q i - c r ? PD7005, PD7035, PD7935 FEATURES DESCRIPTION M itsubishi PD7XX5 series are InGaAs photodiodes de
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tj24clÃ
PD7005,
PD7035,
PD7935
1300nm)
00mEM2
1300nm,
200ps/dlv
PD7005
PD7035
PD7935
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Untitled
Abstract: No abstract text available
Text: M IT S U B IS H I InGaAs PHOTODIODES P D 7X X 5 MITSUBISHI DISCRETE SC 31E B ì> SERIES tj24cl ñ 2 ci GGIMEBR ^ HIMITS FOR O P T IC A L C O M M U N IC A TIO N j "T-m-cn TYPE NAME PD7005, PD7035, PD7935 DESCRIPTION FEATURES Mitsubishi PD7XX5 series are InGaAs photodiodes de
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tj24cl
PD7005,
PD7035,
PD7935
1600nm
1300nm)
1300nm,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI InGaAs PHOTODIODES PD7XX6 MITSUBISHI DISCRETE SC 31E D I S E R IE S Q014E43 □ B M I T 5 F O R O P T IC A L C O M M U N IC A T IO N T - 4 1 -D 7 TYPE NAME DESCRIPTION FEATURES The PD 7X X 6 series are InG aAs photodiodes designed to • • High quantum efficiency
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Q014E43
300/um
0ai424b
1300nm)
1300nm,
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photodiodes mitsubishi
Abstract: No abstract text available
Text: blE ]> • GD1 4 7 2 5 MITSUBISHI DISCRETE 7 flfl IMITS MITSUBISHI InGaAs PHOTODIODES PD8XX2 SERIES SC FOR OPTICAL COMMUNICATION TYPE NAME DESCRIPTION PD8XX2 is an FEATURES InGaAs avalanche • High quantum efficiency photodiode suitable fo r receiving the light having a wavelength
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1600nm.
photodiodes mitsubishi
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Untitled
Abstract: No abstract text available
Text: bl E D • bEHTflE'ì D014713 Tbb MITS MITSUBISHI DISCRETE SC MITSUBISHI InGaAs PHOTODIODES PD7XX5 SERIES FOR OPTICAL COMMUNICATION TYPE NAME FEATURES DESCRIPTION PD7XX5 is an InGaAs pin photodiode having light receiving diameter o f 80 fi m, w hich a is suitable
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D014713
1600nm.
1600nm
1300nm)
1300nm,
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mitsubishi ml laser
Abstract: S1250 n type laser diode
Text: MITSUBISHI OPTICAL SEMICONDUCTOR DEVICES ORDERING INFORMATION 1. LASER DIODES, PHOTODIODES Device type f ML : Laser diode l^PD : Photodiode * i Wavelength code Package code (2 digits, or, 2 digits + 1 alphabet) Chip series No. * Pin connection 2 /fixed only to the monitor PD»
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S1250
mitsubishi ml laser
S1250
n type laser diode
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Photo Diodes
Abstract: "photo diodes"
Text: MITSUBISHI PHOTO DIODES PD7XX13 SERIES InGaAs PIN PHOTO DIODES Feature DESCRIPTION 0 B u it in GaAs Pre-amplifier with AGC function ^Single 5.0 supply voltage for Pre-amplifier ^D ifferential output ^ B a ll lens cap PD7XX8 Series are a 02O|xm InGaAs pin photodiodes
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PD7XX13
200MHz,
10MHz-1
488G/S
Photo Diodes
"photo diodes"
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SILICON AVALANCHE PHOTODIODES blE ]> • PD1XX2 SERIES bSHRflST 0014705 TiT » M I T S MITSUBISHI DISCRETE SC FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS TYPE NAME DESCRIPTION FEATURES PD1XX2 is a silicon avalanche photodiode (Si-APD) • High speed response (pulse rise tim e 150ps)
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150ps)
800GHz)
AD1000)
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Untitled
Abstract: No abstract text available
Text: b lE » • bSH^fiST üüm?G3 M ITS U B IS H I D1 7 DISCRETE « M IT S MITSUBISHI SILICON Pin PHOTODIODES PD2XX1 SERIES SC FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS TYPE NAME DESCRIPTION FEATURES PD2XX1 is a silicon pin photodiode having a light • High speed response
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800nm
850nm
PD2101
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Untitled
Abstract: No abstract text available
Text: M IT S U B IS H I InGaAs PHOTO DIODES PD8XX2 SERIES FO R O PTICAL. C O M M U N IC A T IO N MITSUBISHI DISCRETE SC TYPE NAME E bSMRôS'ï Q01H2S1 T EIMITS 31E D :"Pm -07 PD3002, PD3932 DESCRIPTION FEATURES The PD 8X X 2 series are InG aAs avalanche photodiodes de
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Q01H2S1
PD3002,
PD3932
1300nrn
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750NR
Abstract: AD1000 1000nm ir avalanche photodiodes M025 PD1002 PD1032 10 gb laser diode Silicon apd
Text: MITSUBISHI SILICON AVALANCHE PHOTODIODES LIE D • b S 4 tìfl2cì 0 a m 7 0 S MITSUBISHI PD1XX2 SERIES TTT « M I T S DISCRETE SC FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS TYPE NAME FEATURES DESCRIPTION PD 1XX2 is a silico n avalanche p h o to d io d e (S i-A P D )
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PD1002,
PD1032
150ps)
800GHz)
AD1000)
750NR
AD1000
1000nm ir
avalanche photodiodes
M025
PD1002
PD1032
10 gb laser diode
Silicon apd
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30h80
Abstract: avalanche photodiodes vn09 PD80 PD8932 InGaAs photodiodes mitsubishi high speed
Text: M IT S U B IS H I InGaAs P H O TO DIO DES PDSXX2 VîS* F O R O PTICAL. C O M M U N IC A T IO N MITSUBISHI DISCRETE SC TYPE NAME S E R IE S 1=24=102^ 0014251 T EIMITS 31E D r^rm-o7 PD3002, PD8932 DESCRIPTION FEATURES The P08XX2 series are InGaAs avalanche photodiodes de
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PD8932
rr-m-07
1300nm
DQ14ESS
30h80
avalanche photodiodes
vn09
PD80
PD8932
InGaAs photodiodes mitsubishi high speed
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avalanche photodiodes
Abstract: PD8001
Text: M IT S U B IS H I InGaAs PH O T O DIO DES PDSXX1 SERIES F O R O P T IC A L C O M M U N IC A T IO N MITSUBISHI DISCRETE SC TYPE NAME DQIMSM? fi EHMIT5' 31E D • T '- M l - c r ç P D 8001, PD8931 DESCRIPTION FEATURES The P D 8 X X t series are In G aA s avalanche photodiodes d e
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PD8001,
PD8931
55/im
avalanche photodiodes
PD8001
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30h80
Abstract: No abstract text available
Text: M IT S U B IS H I InGaAs PH O T O DIO DES PD7XX6 SERIES MITSUBISHI DISCRETE SC 31E D I bSM^ÛE^ 0014EM3 □ B M I T 5 FO R O P T IC A L C O M M U N IC A T IO N r-P i4l -vrt TYPE NAME DESCRIPTION FEATURES The P D 7 X X 6 se rie s are In G a A s photodiodes de sign e d to
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0014EM3
T-q-l-07
300/um
1001300nm)
1300nm,
30h80
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