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    PHOTODIODE HIGH RESPONSIVITY HIGH SHUNT RESISTANCE Search Results

    PHOTODIODE HIGH RESPONSIVITY HIGH SHUNT RESISTANCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    High-End-Gas-Cooker Renesas Electronics Corporation High-End Gas Cooker Reference Design Visit Renesas Electronics Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    PHOTODIODE HIGH RESPONSIVITY HIGH SHUNT RESISTANCE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PD10M

    Abstract: InGaAs Photodiode 1550nm DSA002636
    Text: PD10M 10mm InGaAs Photodiode FEATURES • Planar Structure • Dielectric Passivation • High Shunt Resistance • High Responsivity APPLICATIONS • Sensing • High Sensitivity Instrumentation PD10M-1xx Ceramic Flat Pack PRODUCT DESCRIPTION The PD10M is an InGaAs photodiode with a


    Original     		PDF PD10M PD10M-1xx PD10M InGaAs Photodiode 1550nm DSA002636

    PD500

    Abstract: Photodiode, 1550nm Photodiode 1550nm sensitivity InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2
    Text: PD500 500 m InGaAs Photodiode FEATURES • Planar Structure • Dielectric Passivation • High Shunt Resistance • High Responsivity APPLICATIONS • High Sensitivity Instrumentation • Laser Back Facet Monitoring PD500-0xx Ceramic Sub-Mount PD500-1xx


    Original     		PDF PD500 PD500-0xx PD500-1xx PD500 Photodiode, 1550nm Photodiode 1550nm sensitivity InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2

    TO8 package

    Abstract: 5mm photodiode photodiode 5mm Photodiode 1550nm sensitivity photodiode responsivity 1550nm, 1 InGaAs Photodiode 1550nm
    Text: PD5M 5mm InGaAs Photodiode FEATURES • Planar Structure • Dielectric Passivation • High Shunt Resistance • High Responsivity APPLICATIONS PD5M-0xx Ceramic Sub-Mount • Sensing • High Sensitivity Instrumentation PD5M-1xx TO8 can Package PRODUCT DESCRIPTION


    Original     		PDF

    TO5 package

    Abstract: InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2
    Text: PD3M 3mm InGaAs Photodiode FEATURES • Planar Structure • Dielectric Passivation • High Shunt Resistance • High Responsivity APPLICATIONS PD3M-0xx Ceramic Sub-Mount • Sensing • High Sensitivity Instrumentation PD3M-1xx TO5 can Package PRODUCT DESCRIPTION


    Original     		PDF

    TO46 package

    Abstract: photodiode high responsivity high shunt resistance InGaAs photodiode InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2
    Text: PD1M 1mm InGaAs Photodiode FEATURES • Planar Structure • Dielectric Passivation • High Shunt Resistance • High Responsivity APPLICATIONS PD1M-0xx Ceramic Sub-Mount • Sensing • High Sensitivity Instrumentation PD1M-1xx TO46 can Package PRODUCT DESCRIPTION


    Original     		PDF

    TO5 package

    Abstract: Anadigics TO5 packages Photodiode 1550nm sensitivity InGaAs Photodiode 1550nm
    Text: PD2M 2mm InGaAs Photodiode FEATURES • Planar Structure • Dielectric Passivation • High Shunt Resistance • High Responsivity APPLICATIONS PD2M-0xx Ceramic Sub-Mount • Sensing • High Sensitivity Instrumentation PD2M-1xx TO5 can Package PRODUCT DESCRIPTION


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    ETX5000T8

    Abstract: photodiode high responsivity high shunt resistance 1550 epitaxx ETX500
    Text: ETX5000T8 Large Area InGaAs P-I-N Photodiode 5 mm Active Diameter Features • High responsivity at 1300, 1550 and 850 nm • High shunt resistance for low noise • Low dark current for high accuracy • Packaged in a TO-8 can Applications • Fiber optic test instruments


    Original     		PDF ETX5000T8 ETX5000T8 photodiode high responsivity high shunt resistance 1550 epitaxx ETX500

    Pacific Silicon Sensor

    Abstract: PS0.25-5 TO52 package VAT-20 TO52
    Text: PS0.25-5 TO52S1 PIN Photodiode Special characteristics: High Speed epitaxy Low Dark current 0,25 mm² active area Parameters: PS0.25-5 Ch Active Area 0.5 x 0.5 mm 0,25 mm 2 max. 4.0 nA typ. 0.5 nA typ. 1.8 pF Spectral Responsivity at 800 nm Shunt Resistance


    Original     		PDF O52S1 Pacific Silicon Sensor PS0.25-5 TO52 package VAT-20 TO52

    ETX 40

    Abstract: JDSU ETX JDSU ETX 100 3000T5 JDSU ETX 500 ETX1000T ETX 2000 K T5 2000T5 ETX1000
    Text: COMMUNICATIONS COMPONENTS Large Area InGaAs Photodiodes ETX 500, ETX 1000, ETX 2000, ETX 3000 Series Key Features • High responsivity in near infrared spectrum • Low dark current for high accuracy • High shunt resistance • Linear over wide range of input optical power


    Original     		PDF 1000T, 2000T5, 3000T5 ETX500 498-JDSU 5378-JDSU ETX 40 JDSU ETX JDSU ETX 100 JDSU ETX 500 ETX1000T ETX 2000 K T5 2000T5 ETX1000

    JDSU ETX

    Abstract: JDSU ETX 500 JDSU ETX 100 ETX1000T InGaas PIN photodiode chip ETX 40 ETX1000 1000T InGaAs photodiode spectral response photodiode high responsivity high shunt resistance
    Text: COMMUNICATIONS COMPONENTS Large-area InGaAs Photodiodes ETX 500 and ETX 1000 Series Key Features • High responsivity in near infrared spectrum • Low dark current for high accuracy • High shunt resistance • Linear over wide range of input optical power


    Original     		PDF 1000T GR468, 1000T. 498-JDSU 5378-JDSU ETX500 JDSU ETX JDSU ETX 500 JDSU ETX 100 ETX1000T InGaas PIN photodiode chip ETX 40 ETX1000 InGaAs photodiode spectral response photodiode high responsivity high shunt resistance

    Untitled

    Abstract: No abstract text available
    Text: Silicon PIN Photodiode Sandwich Detector SD 138-11-31-211 CHIP DIMENSIONS INCH [mm] FEATURES Large Active Area Low Noise High Shunt Resistance Hermetically Sealed High Saturation SYMBOL DESCRIPTION The SD138-11-31-211 device features two silicon PIN photodiodes vertically


    Original     		PDF SD138-11-31-211

    BPW21 application note

    Abstract: 308-067 uA741 linear photometer 564-037 BPW21 303-674 bpw21 op BPW21 equivalent uv Photocell bpw21 amplifier
    Text: Issued July 1998 298-4562 Data Pack F Photodiodes Data Sheet Basics of photometry Figure 2 This is a brief introduction to the basics of photometry. To be able to understand this subject better a brief review of geometric principles utilised is required. Geometric principles


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    BPW21 application note

    Abstract: BPW21 photodiode application lux meter 308-067 photodiode lumen uA741 linear photometer photodiode RS 308-067 564-037 303-674 UV Photodiode
    Text: Issued March 1999 298-4562 Data Pack F Photodiodes Data Sheet Basics of photometry Figure 2 This is a brief introduction to the basics of photometry. To be able to understand this subject better a brief review of geometric principles utilised is required.


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    308-067

    Abstract: 57-27 silicon diode BPW21 application note Photodiode laser detector BPX-65 large area quadrant photodiode RS 308-067 uA741 linear photometer photodiode application lux meter uv photodiode photo diode array amplifier
    Text: Issued March 1993 F14784 Photodiodes Basics of photometry This is a brief introduction to the basics of photometry. To be able to understand this subject better a brief review of geometric principles utilised is required. Figure 2 Geometric principles Radian


    Original     		PDF F14784 308-067 57-27 silicon diode BPW21 application note Photodiode laser detector BPX-65 large area quadrant photodiode RS 308-067 uA741 linear photometer photodiode application lux meter uv photodiode photo diode array amplifier

    photodiode RS 308-067

    Abstract: BPW21 application note bpw21 op RS 308-067 3054-62 Photodiode laser detector BPX-65 lm308 equivalent T05 Package large area quadrant photodiode BPW21
    Text: Issued March 1993 014-784 Data Pack F Photodiodes Data Sheet Basics of photometry Figure 2 This is a brief introduction to the basics of photometry. To be able to understand this subject better a brief review of geometric principles utilised is required. Geometric principles


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Blue Enhanced Photoconductive Silicon Photodiode PDB-C140 FEATURES • • • • Low noise Blue enhanced High shunt resistance High response DESCRIPTION APPLICATIONS The PDB-C140 is a blue enhanced PIN silicon photodiode in a photoconductive mode, packaged in


    Original     		PDF PDB-C140 PDB-C140 9x10-13 660nm

    laser range finder schematics

    Abstract: BPW34 application note "laser range finder" 254 nm uv LED SPOT-9DMI APPLICATION NOTE BpW34 far uv photodiode UDT sensors BPX65 PIN-10AP
    Text: TABLE OF CONTENTS Revision 98.3 Index and Selection Guide Photodiode Characteristics and Applications Application Notes and Further Reading Sources Standard Photodiodes, Electro-Optical Specifications and Design Notes Planar Diffused Photodiodes Photoconductive Series


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: EP lTÀ X X ETX S000T8 Large Area InGaAs P-l-N Photodiode 5 mm Active Diameter Features •High responsivity at 1300, i 550 and 850 nm ■High shunt resistance for low noise ■Low dark current for high accuracy ■Packaged in a TO-8 can A pp lications ■Fiber optic test instruments


    OCR Scan     		PDF S000T8 5000T8 33b0N0t.

    EPITAXX

    Abstract: photodiode high responsivity high shunt resistance 1550 ETX 40
    Text: EPI E TX 5 0 0 0 T 8 Large Area InGaAs P-l-N Photodiode 5 mm Active Diameter Features •High responsivity at 1300, i 550 and 850 nm ■High shunt resistance for low noise ■Low dark current for high accuracy ■Packaged in a TO-8 can A p p lica tio n s ■ Fiber optic test instruments


    OCR Scan     		PDF 5000T8 33b0M0b EPITAXX photodiode high responsivity high shunt resistance 1550 ETX 40

    ETX2000T5

    Abstract: ETX3000T5 ETX500T EPITAXX ETX 300 InGaas PIN photodiode, 1550 sensitivity noise diode LARGE SURFACE AREA PHOTODIODE photodiode high responsivity high shunt resistance 1550 epitaxx InGaAs Epitaxx
    Text: E TX 500T, ET X 100 0 T ERi iMAA ETX 2 0 0 0 T 5 , ET X 300 0 T5 m m « Large Area InGaAs Photodiodes Features • Hiqh responsivity at 1300, 1550, and 850 nm. ■ Low dark current for high accuracy ■ High shunt resistance for low noise ■ Linear over wide range of input optical


    OCR Scan     		PDF 1000T 2000T5, 3000T5 33bOMDb 0DD0375 ETX2000T5 ETX3000T5 ETX500T EPITAXX ETX 300 InGaas PIN photodiode, 1550 sensitivity noise diode LARGE SURFACE AREA PHOTODIODE photodiode high responsivity high shunt resistance 1550 epitaxx InGaAs Epitaxx

    EPITAXX

    Abstract: EPITAXX ETX 300 ETX500T ETX3000T5 InGaAs Epitaxx linear 3000T5 ETX2000T5 InGaAs 1550 photodiode transimpedance amplifier EPITAXX ETX 75 inGaAs photodiode 1550
    Text: =ss ETX 5001V ETX 1000T ETX 2000T5, ETX 3000T5 ERl iAAA Large Area InGaAs Photodiodes Features • High responsivity at 1300, 1550, and 850 nm. ■ Low dark current for high accuracy ■ High shunt resistance for low noise ■ Linear over wide range of input optical


    OCR Scan     		PDF 2000T5, 3000T5 500nm, 1000p 33b0MDb EPITAXX EPITAXX ETX 300 ETX500T ETX3000T5 InGaAs Epitaxx linear 3000T5 ETX2000T5 InGaAs 1550 photodiode transimpedance amplifier EPITAXX ETX 75 inGaAs photodiode 1550

    J16-18A-R01M-HS

    Abstract: J16-8SP-R05M-HS J16-18A-R01M germanium photodiode
    Text: J ^ E G zG JU D SO N Germanium Detector Operating Notes 0.8 to 1.8 jim 'f§jjpilljf!' Biii 'viflnJP General Responsivity Operating Circuit J16 Series detectors are high-quality G erm anium photodiodes designed for the 800 to 1800 nm w avelength range. The equivalent circuit for a G erm a­


    OCR Scan     		PDF J16TE 3G30bGS 00D03Sb 3030b05 00GG3E7 J16-18A-R01M-HS J16-8SP-R05M-HS J16-18A-R01M germanium photodiode

    J16D

    Abstract: J161 germanium diode equivalent GE PHOTODIODE J16-18A-R01M-HS J16-5SP-R03M-HS 103 SRM
    Text: E G I 8c G JUDSON 3TE D • 30BGb05 000DE13 4 *JUD ^ T -V /-V / J IO Series Germanium Detector Operating Notes General Responsivity Operating Circuit J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range.


    OCR Scan     		PDF 30BGb05 000DE13 J16TE2 11-mission. 3030L 000D21L, J16D J161 germanium diode equivalent GE PHOTODIODE J16-18A-R01M-HS J16-5SP-R03M-HS 103 SRM

    J16-5SP-R02M-SC

    Abstract: J16-8SP-R05M GE PHOTODIODE J16-18A-R01M-SC J16P1R10M J16-5SP-R03M-HS J16-5SP-R03M-SC judson germanium photodiode J16-8SP-R05M-SC J16-18A-R01M
    Text: E G 8c G JUDSON BTE J> J 16 Series 3CI30bD5 D0DDS13 JUD 4 T - H t - H l Germanium Detector Operating Notes General Responsivity Operating Circuit J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range.


    OCR Scan     		PDF 3CI30bD5 D0DDS13 J16TE2 1550nm. 3G30L 000021L. J16-5SP-R02M-SC J16-8SP-R05M GE PHOTODIODE J16-18A-R01M-SC J16P1R10M J16-5SP-R03M-HS J16-5SP-R03M-SC judson germanium photodiode J16-8SP-R05M-SC J16-18A-R01M