BPD-BQA934
Abstract: l129 BPD-BQB334 L-132 BPD-BQA334 BPD-BQAA34 BPD-BQB934 BPD-BQBA34 BPD-BQD934 BPD-BQDA34
Text: PHOTODIODE-END & SIDE LOOK Chip Package Part No. Material Electrical & Optical Characteristics Wavelength Op nm Light Current Lens IL(uA) Color @VR=5V Ee=1mW/cm2 Typ 3I BPD-BQA341 Si-Photodiode BPD-BQB341 (PIN) BPD-BQA334 BPD-BQB334 5I Si-Photodiode (PIN)
|
Original
|
PDF
|
BPD-BQA341
BPD-BQB341
BPD-BQA334
BPD-BQB334
BPD-BQD334
L-132
BPD-RQ03DV-1
L-133
BPD-BQA934
l129
BPD-BQB334
L-132
BPD-BQA334
BPD-BQAA34
BPD-BQB934
BPD-BQBA34
BPD-BQD934
BPD-BQDA34
|
Untitled
Abstract: No abstract text available
Text: QSE773 Sidelooker Pin Photodiode Features Description • Daylight filter The QSE773 is a plastic silicon pin photodiode in a sidelooker package. ■ Sidelooker package ■ Pin photodiode ■ Wide reception angle, 120° ■ Chip size = 0.107 sq. inches 2.71 sq. mm
|
Original
|
PDF
|
QSE773
QSE773
|
Untitled
Abstract: No abstract text available
Text: PIN Photodiode KODENSHI HPI-2C・HPI-2CR2 DIMENSIONS Unit : mm The HPI-2C is a high-speed, high-output silicon PIN photodiode, mounted in a low profile ceramic package. The HPI-2CR2 photodiode, with daylight filter, is available in the same package. FEATURES
|
Original
|
PDF
|
000lx
2856K
|
QSE773
Abstract: PIN Photodiode IR photodiode Photodiode a C-32V
Text: QSE773 Sidelooker Pin Photodiode Features Description • Daylight filter The QSE773 is a plastic silicon pin photodiode in a sidelooker package. ■ Sidelooker package ■ Pin photodiode ■ Wide reception angle, 120° ■ Chip size = 0.107 sq. inches 2.71 sq. mm
|
Original
|
PDF
|
QSE773
QSE773
PIN Photodiode
IR photodiode
Photodiode a
C-32V
|
QSE773
Abstract: IR LED direct exposure to photodiode
Text: QSE773 Sidelooker Pin Photodiode Features Description • Daylight filter The QSE773 is a plastic silicon pin photodiode in a sidelooker package. ■ Sidelooker package ■ Pin photodiode ■ Wide reception angle, 120° ■ Chip size = 0.107 sq. inches 2.71 sq. mm
|
Original
|
PDF
|
QSE773
QSE773
IR LED direct exposure to photodiode
|
photodiode linear array
Abstract: Photodiode Array linear 16 Photodiode-Array LA12 silicon linear photodiode array 4 elements photodetector array IR photodiode array linear array photodiode element
Text: SLD-74D1/4 Photodiode Array Features • 4 planar photodiode elements • Wide acceptance angle • Low capacitance, fast switching time • Low leakage current • Linear response vs irradiance • 8 pin Dual In-line package Description This Silonex photodiode array consists of four
|
Original
|
PDF
|
SLD-74D1/4
QF-84
photodiode linear array
Photodiode Array linear
16 Photodiode-Array
LA12
silicon linear photodiode array
4 elements photodetector array
IR photodiode array
linear array photodiode element
|
MID-73A1C
Abstract: mid ir photodiode
Text: SIDE-LOOK PACKAGE PIN PHOTODIODE MID-73A1C Description Package Dimensions Unit : mm inches The MID-73A1C is a photodiode mounted in special dark plastic package and suitable for the IRED (940nm) Type. 3.05 (.120) 7.5±0.12 (.295 3.00+0.120 (.118±.005)
|
Original
|
PDF
|
MID-73A1C
MID-73A1C
940nm)
00MIN.
mid ir photodiode
|
MID-85A1C
Abstract: No abstract text available
Text: SIDE LOOK PACKAGE PIN PHOTODIODE MID-85A1C Description Package Dimensions The MID-85A1C is a photodiode mounted in special dark Unit: mm inches 5.00 (.200 plastic package and suitable for the IRED (940nm) Type. 6.60 (.260) 4.00 (.160) 4.00 (.160) 22.60 TYP.
|
Original
|
PDF
|
MID-85A1C
MID-85A1C
940nm)
00MIN.
|
mid ir photodiode
Abstract: IR led 940nm MID-56A19
Text: T-1 3/4 PACKAGE PIN PHOTODIODE Description MID-56A19 Package Dimensions The MID-56A19 is a photodiode mounted in Unit: mm inches ψ5.05 (.200) special dark end look plastic package and suitable for the IRED 940nm type. 5.47 (.215) 7.62 (.300) 5.90 (.230)
|
Original
|
PDF
|
MID-56A19
MID-56A19
940nm
00MIN.
mid ir photodiode
IR led 940nm
|
mid ir photodiode
Abstract: MID-54A19 940NM
Text: T-1 3/4 PACKAGE PIN PHOTODIODE Description MID-54A19 Package Dimensions The MID-54A19 is a photodiode mounted in special ψ5.05 .200 dark end look plastic package and suitable for the Unit: mm ( inches IRED (940nm) type. 5.47 (.215) 7.62 (.300) 5.90 (.230)
|
Original
|
PDF
|
MID-54A19
MID-54A19
940nm)
40MIN.
50TYP.
00MIN.
mid ir photodiode
940NM
|
VTD34FSM
Abstract: bpw photodiode
Text: SILICON PHOTODIODE VTD34FSM BPW 34F INDUSTRY EQUIVALENT PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Infrared transmiting package • High sensitivity Planar silicon photodiode in an infrared transmitting, visible blocking molded plastic package.
|
Original
|
PDF
|
VTD34FSM
VTD34FSM
bpw photodiode
|
bpw 50
Abstract: PerkinElmer fyd-1150 K/PerkinElmer fyd-1150
Text: SILICON PHOTODIODE VTD34FSMH BPW 34F INDUSTRY EQUIVALENT PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Infrared transmiting package • High sensitivity Planar silicon photodiode in an infrared transmitting, visible blocking molded plastic package.
|
Original
|
PDF
|
VTD34FSMH
bpw 50
PerkinElmer fyd-1150
K/PerkinElmer fyd-1150
|
Untitled
Abstract: No abstract text available
Text: SILICON PHOTODIODE VTD34FSMH BPW 34F INDUSTRY EQUIVALENT PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Infrared transmiting package • High sensitivity Planar silicon photodiode in an infrared transmitting, visible blocking molded plastic package.
|
Original
|
PDF
|
VTD34FSMH
|
linear uv photodiode array
Abstract: Photodiode Array linear PI0512WS linear array photodiode element
Text: Peripheral Imaging Corporation 650 N. Mary Ave. Sunnyvale, California, 94085 Phone: 408-962-1913 Fax: 408-962-1998 PI0512WS 512-Pixel 50-µm-Pitch Wide Aperture Spectroscopic Photodiode Array Engineering Data Sheet Description Peripheral Imaging Corporation's WS series is family of self-scanning photodiode solid-state
|
Original
|
PDF
|
PI0512WS
512-Pixel
PI0512WS
linear uv photodiode array
Photodiode Array linear
linear array photodiode element
|
|
|
Untitled
Abstract: No abstract text available
Text: Photodiode Side Look Chip Part Nu mber Materi al BPD-RQ0AIV1* Electrical & Optical Characteristics Wave length p nm Si-Photodiode 940(820-1100) (PIN) Lens Colo r Black Light Current I L (u A) @V R =5V Ee=5 mW /cm 2 Reverse Open Circui t Breakdown Vo ltag e
|
Original
|
PDF
|
IR-17
|
Untitled
Abstract: No abstract text available
Text: Photodiode Side Look Chip Part Nu mber Materi al BPD-RQ0AIV1* Electrical & Optical Characteristics Wave length p nm Si-Photodiode 940(820-1100) (PIN) Lens Colo r Black Light Current I L (u A) @V R =5V Ee=5 mW /cm 2 Reverse Open Circui t Breakdown Vo ltag e
|
Original
|
PDF
|
IR-17
|
TCND5000
Abstract: No abstract text available
Text: TCND5000 Vishay Semiconductors Reflective Optical Sensor with PIN Photodiode Output Description The TCND5000 is a reflective sensor that includes an infrared emitter and PIN photodiode in a surface mount package which blocks visible light. Top view A Features
|
Original
|
PDF
|
TCND5000
TCND5000
2002/95/EC
2002/96/EC
08-Apr-05
|
tCnd5000
Abstract: No abstract text available
Text: TCND5000 Vishay Semiconductors Reflective Optical Sensor with PIN Photodiode Output Description The TCND5000 is a reflective sensor that includes an infrared emitter and PIN photodiode in a surface mount package which blocks visible light. Top view A Features
|
Original
|
PDF
|
TCND5000
TCND5000
2002/95/EC
2002/96/EC
1996any
18-Jul-08
|
TIL100
Abstract: TIL38 TIL 100 photodiode ge spectrally matched photodiode til38 photodiode
Text: 4-73 Silicon Photodiode TIL 100 Optoelectronic Products Ge neral Description The TIL100 is a high-speed PIN photodiode operating in a reverse-bias mode. It is spectrally matched with the TIL38 emitter. This photodiode was designed for infrared remote-control system.
|
OCR Scan
|
PDF
|
TIL100
TIL38
TIL 100
photodiode ge
spectrally matched photodiode
til38 photodiode
|
ir led 940 nm 1 w
Abstract: PH302C
Text: PLASTIC MOLDED PIN PHOTODIODE PH302C FEATURES DESCRIPTION_ • The PH302C is a photodiode with PIN structure. It has a wide photo-receiving area and high speed response enabling applications for various remote controlling equipment. The
|
OCR Scan
|
PDF
|
PH302C
PH302C
b4E7525
GGb5310
b427525
ir led 940 nm 1 w
|
Untitled
Abstract: No abstract text available
Text: SIDELOOKER PIN PHOTODIODE OPTOELECTRONICS QSE773 PACKAGE DIMENSIONS p .108 2.75 ±.008 DESCRIPTION The QSE773 is a silicon PIN photodiode encapsulated in an infrared transparent, black, plastic sidelooker package. FEATURES • High sensitivity ■ Low cost
|
OCR Scan
|
PDF
|
QSE773
QSE773
|
Untitled
Abstract: No abstract text available
Text: SIDELOOKER PIN PHOTODIODE OPTOELECTRONI CS QSE973 The QSE973 is a silicon PIN photodiode encapsulated in an infrared transparent, black, plastic sidelooker package. n SURFACE FEATURES High sensitivity Low cost Plastic package is infrared transparent and tinted to
|
OCR Scan
|
PDF
|
QSE973
QSE973
DDDb31fi
|
Untitled
Abstract: No abstract text available
Text: 1C BUILT-IN PHOTODIODE PH502HC FEATURES_ DESCRIPTION_ • The PH502HC is a digital-output light receiving IC, integrating a photodiode and a signal processing circuit in one chip. Direct connection with an IC without using a processing circuit
|
OCR Scan
|
PDF
|
PH502HC
PH502HC
SE308
b4275E5
|
Untitled
Abstract: No abstract text available
Text: ËO SIDELOOKER PIN PHOTODIODE OPTOELECTRONICS QSE773 The QSE773 is a silicon PIN photodiode encapsulated in an infrared transparent, black, plastic sidelooker package. -.108 2.75 - ±.008 .207 (5.26)— ±.008 K .300 (7.62) ±.012 .118(3.00)±.008 .610(15.48)
|
OCR Scan
|
PDF
|
QSE773
QSE773
ST1665
|
