Untitled
Abstract: No abstract text available
Text: Photodiode Arrays for x-ray Security Scanning Left: 16 Element, 1.6 mm Pitch Photodiode Array With Segmented Csi Scintillator. Right: 16 Element, 2.5 mm Pitch Photodiode Array With GOS Low Energy Screen Scintillator. Photodiode Arrays – VTA Series Applications
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VTA2164H-D
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650NM photodiode
Abstract: LOG100 photodiode 650nm nep photodiode amplifier REF200
Text: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The
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OPT301
OPT301
650nm)
20dB/decade
REF200
REF200
2N2222
4-20mA
650NM photodiode
LOG100
photodiode 650nm nep
photodiode amplifier
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photodiode 650nm nep
Abstract: LOG100 OPT301 resistor1M REF200 OPT301M 650NM photodiode 650NM photodetector opt301s 2N2222 curve
Text: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The
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OPT301
OPT301
650nm)
photodiode 650nm nep
LOG100
resistor1M
REF200
OPT301M
650NM photodiode
650NM photodetector
opt301s
2N2222 curve
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650NM photodiode
Abstract: photodiode amplifier 650NM photodetector Isolated 4-20ma photodiode 650nm nep LOG100 2n2222 transistor datasheet 650NM photodiode 40 kilohertz metal proximity detector sensor op amp
Text: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The
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OPT301
OPT301
650nm)
650NM photodiode
photodiode amplifier
650NM photodetector
Isolated 4-20ma
photodiode 650nm nep
LOG100
2n2222 transistor datasheet
650NM photodiode 40 kilohertz
metal proximity detector sensor
op amp
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LOG100
Abstract: No abstract text available
Text: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The
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OPT301
650nm)
OPT301
LOG100
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LOG100
Abstract: 650NM photodiode
Text: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The
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OPT301
650nm)
OPT301
LOG100
650NM photodiode
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LOG100
Abstract: No abstract text available
Text: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The
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OPT301
650nm)
OPT301
LOG100
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LOG100
Abstract: No abstract text available
Text: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The
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OPT301
OPT301
650nm)
LOG100
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photodiode 650nm nep
Abstract: 650NM photodiode LOG100 INA106 OPT301 OPT301M REF200 650NM photodetector blue laser sources pickup
Text: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The
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OPT301
OPT301
650nm)
20dB/decade
REF200
REF200
2N2222
4-20mA
photodiode 650nm nep
650NM photodiode
LOG100
INA106
OPT301M
650NM photodetector
blue laser sources pickup
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LOG100
Abstract: No abstract text available
Text: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The
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OPT301
650nm)
OPT301
LOG100
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LOG100
Abstract: OPT301 OPT301M REF200 6nc3 650nm photoDIODE Photodiode 650nm
Text: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The
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OPT301
OPT301
650nm)
LOG100
OPT301M
REF200
6nc3
650nm photoDIODE
Photodiode 650nm
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LOG100
Abstract: 2N2222 curve
Text: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The
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OPT301
650nm)
OPT301
LOG100
2N2222 curve
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LOG100
Abstract: 650NM photodiode photodiode amplifier REF200 ultraviolet sensor flame OPT301 OPT301M
Text: OPT301 FPO 70% INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT301 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The
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OPT301
OPT301
650nm)
LOG100
650NM photodiode
photodiode amplifier
REF200
ultraviolet sensor flame
OPT301M
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Untitled
Abstract: No abstract text available
Text: 16-element Si photodiode arrays S11212-421 S11212 series S11212-321 S11212-121 S11212-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection The S11212 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It has improved sensitivity uniformity and smaller photodiode element variations compared to our previous product S5668
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16-element
S11212-421
S11212
S11212-321
S11212-121
S11212-021
S5668
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650NM photodiode
Abstract: photodiode 650nm nep LOG100 650NM photodetector INA106 equivalent LARGE SURFACE AREA PHOTODIODE photodiode amplifier REF200 transistor 2n2222 TO-90 OPT209P-J
Text: OPT209 FPO 70% PHOTODIODE WITH ON-CHIP AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT209 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The
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OPT209
OPT209
650nm)
16kHz
IN4148
REF200
REF200
2N2222
650NM photodiode
photodiode 650nm nep
LOG100
650NM photodetector
INA106 equivalent
LARGE SURFACE AREA PHOTODIODE
photodiode amplifier
transistor 2n2222 TO-90
OPT209P-J
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LOG100
Abstract: OPT209 OPT209P REF200 650NM photodiode 1232B INA106 equivalent
Text: OPT209 FPO FPO 70% PHOTODIODE WITH ON-CHIP AMPLIFIER FEATURES DESCRIPTION ● PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT209 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The
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OPT209
OPT209
650nm)
16kHz
IN4148
REF200
REF200
2N2222
LOG100
OPT209P
650NM photodiode
1232B
INA106 equivalent
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Untitled
Abstract: No abstract text available
Text: 16-element Si photodiode arrays S11212-421 S11212 series S11212-321 S11212-121 S11212-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection The S11212 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray
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16-element
S11212-421
S11212
S11212-321
S11212-121
S11212-021
S5668
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Untitled
Abstract: No abstract text available
Text: 16-element Si photodiode arrays S11212-421 S11212 series S11212-321 S11212-121 S11212-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection The S11212 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray
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16-element
S11212-421
S11212
S11212-321
S11212-121
S11212-021
S5668
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Untitled
Abstract: No abstract text available
Text: 16-element Si photodiode arrays S11299-421 S11299 series S11299-321 S11299-121 S11299-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection, slender board type The S11299 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. It has improved sensitivity uniformity and smaller photodiode element variations compared to our previous product S5668
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16-element
S11299-421
S11299
S11299-321
S11299-121
S11299-021
S5668
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330KO
Abstract: S1232
Text: BU R R - BROW N OPT209 PHOTODIODE WITH ON-CHIP AMPLIFIER FEATURES DESCRIPTION • PHOTODIODE SIZE: 0.090 x 0.090 inch 2.29 x 2.29mm The OPT209 is an opto-electronic integrated circuit containing a photodiode and transim pedance amplifier on a single dielectrically isolated chip. The
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OPT209
650nm)
16kHz
OPT209
17313L
330KO
S1232
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Untitled
Abstract: No abstract text available
Text: 16-element Si photodiode arrays S11212-421 S11212-321 S11212 series S11212-121 S11212-021 Back-illuminated photodiode arrays for X-ray non-destructive inspection The S11212 series is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray
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16-element
S11212-421
S11212-321
S11212
S11212-121
S11212-021
S5668
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S268P
Abstract: No abstract text available
Text: S268P Silicon PIN Photodiode Array Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant
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S268P
S268P
D-74025
15-Jul-96
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Untitled
Abstract: No abstract text available
Text: B U R R - BRO W N 0PT2Q1 INTEGRATED PHOTODIODE AND AMPLIFIER FEATURES DESCRIPTION • PHOTODIODE SIZE: 0.090 X 0.090 inch 2.29 x 2.29mm The OPT201 is an opto-electronic integrated circuit containing a photodiode and transim pedance amplifier on a single dielectrically isolated chip. The
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OPT201
650nm)
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE 76-element Si photodiode array S3954 High UV sensitivity photodiode array mounted in DIP Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Half pitch 78-lead DIP l Element size: 3.175 x 0.3175 mm l Entire active area: 3.175 × 25.6875 mm
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76-element
S3954
78-lead
SE-171
KMPD1041E02
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