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    PHOTODIODE 34B Search Results

    PHOTODIODE 34B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADPD2140WBCPZN-R7 Analog Devices Discrete Filtered Photodiode Visit Analog Devices Buy
    ADPD2140WBCPZN-RL Analog Devices Discrete Filtered Photodiode Visit Analog Devices Buy
    ADPD2140BCPZN-R7 Analog Devices Discrete Filtered Photodiode Visit Analog Devices Buy
    ADPD2140BCPZN-RL Analog Devices Discrete Filtered Photodiode Visit Analog Devices Buy
    EVAL-CN0272-SDPZ Analog Devices 2MHz photodiode preamp & dark Visit Analog Devices Buy

    PHOTODIODE 34B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Current to voltage Converter 4-20mA using LM324

    Abstract: Voltage to Current Converter 4-20mA using LM324 jfet cascode XTR101 Voltage to Current Converter 4-20mA LM324 XTR110 comparator 7445 PDS-555 REF200 INA117
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


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    PDF REF200 Current to voltage Converter 4-20mA using LM324 Voltage to Current Converter 4-20mA using LM324 jfet cascode XTR101 Voltage to Current Converter 4-20mA LM324 XTR110 comparator 7445 PDS-555 INA117

    Voltage to Current Converter 4-20mA using LM324

    Abstract: Current to voltage Converter 4-20mA using LM324 Voltage to Current Converter 4-20mA LM324 bridge transducer 4-20ma using instrumentation amplifier LM324 current source inverter 4-20ma current source precision 4-20ma current source constant current source rtd circuits NPN transistor 2n2222 beta value lm324 triangle
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


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    Untitled

    Abstract: No abstract text available
    Text: NOIH2SM1000A HAS2 Image Sensor INTRODUCTION Scope This ICD version is generated after qualification campaign closure. This specification details the ratings, physical, geometrical, electrical and electro-optical characteristics, and test- and inspection-data for the High


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    PDF NOIH2SM1000A NOIH2SM1000A/D

    MIL-STD-883 method 2019

    Abstract: ESCC ndr 550 APS2-FVD-06-003 radiation ionizing dose TID detector
    Text: NOIH2SM1000A HAS2 Image Sensor INTRODUCTION Scope This ICD version is generated after qualification campaign closure. This specification details the ratings, physical, geometrical, electrical and electro-optical characteristics, and test- and inspection-data for the High


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    PDF NOIH2SM1000A NOIH2SM1000A/D MIL-STD-883 method 2019 ESCC ndr 550 APS2-FVD-06-003 radiation ionizing dose TID detector

    APS2-FVD-06-003

    Abstract: NOIH2SM1000A STAR250 star tracker just phd soldering process 606 diode ESCC21300 NOIH2SM1000A-HHC NOIH2SM1000S-HHC
    Text: NOIH2SM1000A HAS2 Image Sensor INTRODUCTION Scope This ICD version is generated after qualification campaign closure. This specification details the ratings, physical, geometrical, electrical and electro-optical characteristics, and test- and inspection-data for the High


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    PDF NOIH2SM1000A NOIH2SM1000A/D APS2-FVD-06-003 STAR250 star tracker just phd soldering process 606 diode ESCC21300 NOIH2SM1000A-HHC NOIH2SM1000S-HHC

    bond pull test

    Abstract: STAR250 star tracker image sensor star tracker
    Text: NOIH2SM1000A HAS2 Image Sensor INTRODUCTION Scope This ICD version is generated after qualification campaign closure. This specification details the ratings, physical, geometrical, electrical and electro-optical characteristics, and test- and inspection-data for the High


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    PDF NOIH2SM1000A NOIH2SM1000A/D bond pull test STAR250 star tracker image sensor star tracker

    Untitled

    Abstract: No abstract text available
    Text: NOIH2SM1000A HAS2 Image Sensor INTRODUCTION Scope This ICD version is generated after qualification campaign closure. This specification details the ratings, physical, geometrical, electrical and electro-optical characteristics, and test- and inspection-data for the High


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    PDF NOIH2SM1000A NOIH2SM1000A/D

    BK7G18 glass

    Abstract: NOIH2SM1000A
    Text: NOIH2SM1000A HAS2 Image Sensor INTRODUCTION Scope This ICD version is generated after qualification campaign closure. This specification details the ratings, physical, geometrical, electrical and electro-optical characteristics, and test- and inspection-data for the High


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    PDF NOIH2SM1000A NOIH2SM1000A/D BK7G18 glass

    transistor 56B marking

    Abstract: NOIH2SM1000A
    Text: NOIH2SM1000A HAS2 Image Sensor INTRODUCTION Scope This ICD version is generated after qualification campaign closure. This specification details the ratings, physical, geometrical, electrical and electro-optical characteristics, and test- and inspection-data for the High


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    PDF NOIH2SM1000A NOIH2SM1000A/D transistor 56B marking

    optO i

    Abstract: Gate level simulation just phd soldering process radiation ionizing dose TID detector Reflective Optical Sensor with Transistor Output euv photodiode
    Text: NOIH2SM1000A HAS2 Image Sensor Introduction • 0.1 Scope The HAS2 is classified as class 1A JEDEC classification [AD03] device for ESD sensitivity. For proper handling and storage conditions, refer to the ON Semiconductor application note AN52561. This ICD version is generated after qualification campaign


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    PDF NOIH2SM1000A AN52561. NOIH2SM1000A/D optO i Gate level simulation just phd soldering process radiation ionizing dose TID detector Reflective Optical Sensor with Transistor Output euv photodiode

    APS2-FVD-06-003

    Abstract: PIN photodiode 10 nm
    Text: NOIH2SM1000A HAS2 Image Sensor 1. Introduction • 1.1 Scope The HAS2 is classified as class 1A JEDEC classification [AD03] device for ESD sensitivity. For proper handling and storage conditions, refer to the ON Semiconductor application note AN52561. This ICD version is generated after qualification campaign


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    PDF NOIH2SM1000A AN52561. NOIH2SM1000A/D APS2-FVD-06-003 PIN photodiode 10 nm

    00149

    Abstract: No abstract text available
    Text: NOIH2SM1000A HAS2 Image Sensor 1. Introduction • 1.1 Scope The HAS2 is classified as class 1A JEDEC classification [AD03] device for ESD sensitivity. For proper handling and storage conditions, refer to the ON Semiconductor application note AN52561. This ICD version is generated after qualification campaign


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    PDF NOIH2SM1000A AN52561. NOIH2SM1000A/D 00149

    HAS2 cypress

    Abstract: STAR250 long range gold detector circuit diagram digital SUN SENSOR cmos detector space radiation BK7G18 psoc new projects 2011 RAD-HARD distance sensor STAR-1000 STAR250 star tracker AD03
    Text: CYIH1SM1000AA-HHCS Detailed Specification - ICD 1. Introduction 1.7 Handling Precautions 1.1 Scope This version of the ICD is the version generated after qualification campaign closure. This specification details the ratings, physical, geometrical, electrical and electro-optical characteristics, test- and


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    PDF CYIH1SM1000AA-HHCS HAS2 cypress STAR250 long range gold detector circuit diagram digital SUN SENSOR cmos detector space radiation BK7G18 psoc new projects 2011 RAD-HARD distance sensor STAR-1000 STAR250 star tracker AD03

    HAS2 cypress

    Abstract: APS2-FVD-06-003 SUN SPOT 300KR
    Text: Image Sensor CYIH1SM1000AA-HHCS Detailed Specification - ICD 1. Introduction 1.7 Handling Precautions 1.1 Scope This version of the ICD is the version generated after qualification campaign closure. This specification details the ratings, physical, geometrical,


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    PDF CYIH1SM1000AA-HHCS HAS2 cypress APS2-FVD-06-003 SUN SPOT 300KR

    BPW34B

    Abstract: No abstract text available
    Text: SIEMENS BPW 34B Silicon PIN Photodiode Enhanced Blue Sensitivity FEATURES • Especially »unable for applications from 350 nm to 1100 nm • Short switching time typ. 25 ns • DIL plastic package with high packing density • SMT version on request APPLICATIONS


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    PDF 2B56K BPW34B

    I-455

    Abstract: No abstract text available
    Text: HFD3002-002/XXX Silicon PIN Photodiode FEATURES • Low capacitance • High speed: tr = 30 ns max. at Vr = 5 V; 10 ns max. at V r = 15 V • High responsivity • Housing electrically isolated • Wave solderable • Mounting options SMA single hole ST single hole


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    PDF HFD3002-002/XXX HFD3002-002/XXX HFD3002 HFD3002-002/XXXs DDS2154 FIBER101 RBER036 RBER037 I-455

    Untitled

    Abstract: No abstract text available
    Text: . OPTEK P roduct B ulletin O PF482 Au gu st 1996 Fiber Optic High Speed PIN Photodiode in ST* Receptacle Type OPF482 Features A bsolute M axim um Ratings T a = 2 5 ° C unless otherw ise noted • Component pre-mounted and ready to use • High speed, low capacitance


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    PDF PF482 OPF482

    photodiode 34b

    Abstract: OPF482 240C2
    Text: @ O P IE K Product Bulletin OPF482 August 1996 Fiber Optic High Speed PIN Photodiode in ST* Receptacle Type OPF482 Features Absolute Maximum Ratings T a = 2 5 ° C u n le s s o th e rw is e n o te d • Reverse V olta g e . 1 oo VDC


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    PDF OPF482 OPF482 photodiode 34b 240C2

    floppy disk drive 3.5 diskette diagram

    Abstract: 8084 microprocessor Microprocessor 8048 floppy disk motor head driver 8048 microprocessor P2211
    Text: SSI 34B580 mcmsuàm' Port Expander Floppy Disk Drive July, 1990 DESCRIPTION FEATURES The SSI 34B580 device is a bipolar integrated circuit that serves as an input/output port expander for an 8084 type microprocessor based floppy disk drive system. The device consolidates functions normally


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    PDF 34B580 34P570 8048type SA400 28-Pin floppy disk drive 3.5 diskette diagram 8084 microprocessor Microprocessor 8048 floppy disk motor head driver 8048 microprocessor P2211

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


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    PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12

    SFH100

    Abstract: germanium photodiode PIN fotodioden BPY12 SFH231 fotodiode Q62702-P1052 400nm photodiode germanium BPW 61
    Text: Si-Fotodetektoren Silicon Photodetectors 7. Fotodioden für spezielle Wellenlängen Package Type <6 Radiant sensitive 7. Photodiodes for Special Wavelengths s, ^•Smax W e10V 7.1 mm2 A/W nA UV-empfindliche Fotodiode SFH291 7.2 ±55 2.73x2.73 0.3 (£ 1 )/5 V


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    PDF SFH291 Q62702-P1038 BPX60 400nm) Q62702-P54 ns/50 Q62702-P945 SFH100 25niWicm) BPX61 SFH100 germanium photodiode PIN fotodioden BPY12 SFH231 fotodiode Q62702-P1052 400nm photodiode germanium BPW 61

    SDL2361H1

    Abstract: SDL-2300 SDL-2352-H1 SDL-2382-P1 SDL-2360 SDL-23-10-P1 6NA8 sdl-2380 SDL-2371-H SDL laser diode manual
    Text: • UP TO 4.0 WATT CW HIGH BRIGHTNESS GaAIAs LASER DIODES Key Features 4, 3, 2, 1.2, 0.5 W cw Power 500, 370, 200, 100 and 50 pm Apertures High Efficiency MOCVD Quantum Well Design Internal TEC Option For Wavelength Control High Reliability Open Heat Sink, Window, and Fiber Packages


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    PDF SDL-2300 SDL-2340, SDL2361H1 SDL-2352-H1 SDL-2382-P1 SDL-2360 SDL-23-10-P1 6NA8 sdl-2380 SDL-2371-H SDL laser diode manual

    KT853

    Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
    Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN


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    PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 3N24x 24xTX KT853 KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B

    CJ 4148 ZENER

    Abstract: etri converter S837 XTR110 transistor PNP A105
    Text: B U R R -B R O W N Ml A P P L I C A T I O N B U L L E T IN M a ilin g A d d r e s s : PO B o x 1 1 4 0 0 • T u c s o n , A Z 8 5 7 3 4 • S tr e e t A d d r e s s : 6 7 3 0 S. T u c s o n B lv d . • T u c s o n , A Z 8 5 7 0 6 Tel: 602 746-1111 • Tw x: 910 -95 2-11 1 • Telex: 066-6491 • FAX (602) 8 89 -15 10 • Im m e d ia te P ro d u ct Info: (800) 5 48 -61 32


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