IAG 080
Abstract: photodiode ingaas ghz
Text: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited
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Abstract: No abstract text available
Text: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited
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Abstract: No abstract text available
Text: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited
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ISO 2768-mk
Abstract: PRBS-31 STM-16 ZL60011 20034
Text: ZL60011 1310 nm, 1550 nm 2.5 Gbps PIN Preamplifier with Photo-current Monitor Data Sheet July 2004 Ordering Information ZL60011/TBD TO-46 with lens -40°C to +85°C Description This optical receiver is a 3.3 V device which contains a PIN photodiode and a low noise transimpedance with
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ZL60011
ZL60011/TBD
OC-48
GR-468CORE.
ISO 2768-mk
PRBS-31
STM-16
ZL60011
20034
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MC2045
Abstract: ZL60009
Text: ZL60009 PIN/Preamp 1300 nm-1550 nm Data Sheet June 2004 Ordering Information ZL60009/TBD TO-46 with lens -40°C to +85°C Description This optical receiver is a 3.3 V device which contains a PIN photodiode and a low noise transimpedance amplifier assembled in a TO-46 package. It is designed
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ZL60009
nm-1550
ZL60009/TBD
GR-468CORE.
MC2045
ZL60009
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Untitled
Abstract: No abstract text available
Text: ZL60009 PIN/Preamp 1300 nm-1550 nm Data Sheet June 2004 Ordering Information ZL60009/TBD TO-46 with lens -40°C to +85°C Description This optical receiver is a 3.3 V device which contains a PIN photodiode and a low noise transimpedance amplifier assembled in a TO-46 package. It is designed
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ZL60009
nm-1550
ZL60009/TBD
GR-468CORE.
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs APD with preamp G9910-14 ROSA type, 1.3/1.55 µm, 2.7 Gbps Features Applications l High-speed response: 2.7 Gbps l High gain: 15 V/mW λ=1550 nm l Differential output l Responsivity: -5 to -33 dBm l Optical return loss: 35 dB l Isolation type: Housing and signal ground are
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G9910-14
SE-171
KAPD1016E01
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PerkinElmer tr 1700
Abstract: PerkinElmer Avalanche Photodiode
Text: Features and Benefits PerkinElmer’s new family of APD modules features built in amplifier and thermoelectric cooler. They are ideal for demanding LIDAR and range-finding applications. Ultra low noise equivalent power NEP Introduction The new LLAM series of avalanche
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12-lead
DTS0108P
PerkinElmer tr 1700
PerkinElmer Avalanche Photodiode
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Untitled
Abstract: No abstract text available
Text: 80 & 200 m InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339757-VAR Description CMC Electronics’ 264-339757-VAR are using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The
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264-339757-VAR
264-339757-VAR
12-lead
1000-1600nm
200um
Opto757-VAR
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InGaas PIN photodiode, 1550 NEP
Abstract: InGaAs Photodiode 1550nm photodiode 1550nm nep InGaas PIN photodiode, 1550 sensitivity InGaas APD photodiode, 1550 sensitivity InGaAs APD photodiode 1550 pin photodiode 2 GHz 1550 InGaAs Avalanche Photodiode IAG-Series avalanche 1550nm photodiode 5 Ghz IAG 080
Text: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at
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IAG 080
Abstract: No abstract text available
Text: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at
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photodiode 1550nm nep
Abstract: No abstract text available
Text: InGaAs Avalanche Photodiode on TEC, Preamplifier Modules MICROELECTRONICS 264-339759-VAR Description CMC Electronics’ 264-339759 Series are using either a InGaAs APD with an ionization ratio of 0.2 or a Silion APD with an ionization ratio of 0.02. The APD is coupled to a Gasfet input
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264-339759-VAR
12lead
200um]
200um,
Opto759-VAR
photodiode 1550nm nep
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InGaas PIN photodiode, 1550 NEP
Abstract: quad photodiode psd quadrant photodiode InGaas PIN photodiode, 1550 sensitivity photodiode 850nm nep UDT Sensors Photodiode, 1550nm NEP InGaas PIN photodiode chip quad photodiode PIN photodiode 850nm
Text: InGaAs Quad Detectors 4 Quadrant Detectors for NIR Wavelengths The UDT InGaAs Quad series of Photodetectors allow position measurements of wavelengths from 850nm to 1700nm. The 4 Quadrant devices made of InGaAs come in 1mmφ InGaAs-1000-4 and 3mmφ (InGaAs-3000-4) sizes. They exhibit an excellent combination of High
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850nm
1700nm.
InGaAs-1000-4)
InGaAs-3000-4)
1550nm
InGaas PIN photodiode, 1550 NEP
quad photodiode psd
quadrant photodiode
InGaas PIN photodiode, 1550 sensitivity
photodiode 850nm nep
UDT Sensors
Photodiode, 1550nm NEP
InGaas PIN photodiode chip
quad photodiode
PIN photodiode 850nm
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Microwave Components
Abstract: No abstract text available
Text: Design Guide RF and Microwave Fiber-Optics MICROWAVE is switched on and off to send digitally coded information Introduction through a fiber to a photodiode receiver. In 1984 Ortel Corporation began developing and producing lasers and detectors for linear fiberoptic links. Since
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Abstract: No abstract text available
Text: Pigtailed InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 276-339761-000 Description CMC Electronics’ 264-339761-000 uses an InGaAs APD with a GaAs FET frontend transimpedance amplifier in a DIL-14 package. The InGaAs APD has a low ionization ratio for lower shot noise. The
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DIL-14
1000-1600nm
Opto761-VAR
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InGaas PIN photodiode, 1550 NEP
Abstract: No abstract text available
Text: Obsolescence Notice This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete_products/ ZL60015
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ZL60015
ZL60015TBD,
ZL60015TDDB,
ZL60015TEDB,
ZL60015TFDB,
ZL60015TGDB,
ZL60015TJDB
ZL60015PADB,
ZL60015PDDB,
InGaas PIN photodiode, 1550 NEP
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InGaas PIN photodiode, 1550 NEP
Abstract: Photodiode receiver specification for 1550 nm ISO 2768-mk ZL60015 ZL60015TBD ZL60015TDDB ZL60015TEDB photodiode 1550 NEP InGaAs 1550 photodiode transimpedance amplifier "ISO 2768-mK"
Text: ZL60015 Optical Receiver. 1310/1550 nm, 2.5 Gbps PIN + Pre-amp with Photocurrent Monitor Data Sheet January 2005 Ordering Information ZL60015TBD, TO-46 with lens The ZL60015 is also available assembled in standard optical receptacles, or with a 1m 9µm fiber
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ZL60015
ZL60015TBD,
ZL60015
ZL60015TDDB,
ZL60015TEDB,
ZL60015TFDB,
ZL60015TGDB,
ZL60015TJDB
ZL60015PADB,
ZL60015PDDB,
InGaas PIN photodiode, 1550 NEP
Photodiode receiver specification for 1550 nm
ISO 2768-mk
ZL60015TBD
ZL60015TDDB
ZL60015TEDB
photodiode 1550 NEP
InGaAs 1550 photodiode transimpedance amplifier
"ISO 2768-mK"
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opto 2561
Abstract: 2561 OPTO MXA-256-1 MXA-256-2 photodiode 256 elements PerkinElmer 1700 inGaAs photodiode 1550 array InGaas PIN photodiode, 1550 NEP
Text: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging
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MXA-256-1,
MXA-256-X
opto 2561
2561 OPTO
MXA-256-1
MXA-256-2
photodiode 256 elements
PerkinElmer 1700
inGaAs photodiode 1550 array
InGaas PIN photodiode, 1550 NEP
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InGaas PIN photodiode, 1550 NEP
Abstract: PerkinElmer 1700 MXA-256-1 MXA-256-2 2561 OPTO photodiode array 1550 nm inGaAs photodiode 1550 array
Text: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging
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MXA-256-1,
MXA-256-X
InGaas PIN photodiode, 1550 NEP
PerkinElmer 1700
MXA-256-1
MXA-256-2
2561 OPTO
photodiode array 1550 nm
inGaAs photodiode 1550 array
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FND-100Q
Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.
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CAT0506P
FND-100Q
FND-100
C30724E
YAG-444-4A
InGaAs APD quadrant
PerkinElmer fnd-100q
Si apd photodiode
nir emitter leds with 700 to 900 nm
SPCM-AQR
C30950E
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IAG200
Abstract: ABC550-04
Text: Detectors H0 Series Silicon and InGaAs-APD Receiver Description The H0-Series includes a Silicon or InGaAs Avalanche Photodiode with an optimized low noise hybrid preamplifier for the use in laser range finding, LIDAR, medical and analytical applications. Housed in a modified 5 pin TO-46 package they offer bandwidths up to 1 GHz and a single ended output. Higher bandwidth can be achieved
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SAR500,
SAR1500
SAT800,
IAG080
IAG200
ABC550-04
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IAG080H0
Abstract: IAG080
Text: Detectors H0 Series Silicon and InGaAs-APD Receiver Description The H0-Series includes a Silicon or InGaAs Avalanche Photodiode with an optimized low noise hybrid preamplifier for the use in laser range finding, LIDAR, medical and analytical applications. Housed in a modified 5 pin TO-46 package they offer bandwidths up to 100 MHz and a single ended output.
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SAR500,
SAR1500
SAT800,
IAG080
IAG200
IAG080H0
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK 47E D 3 0 3 0 b l 0 D00033fl 2 • CANA ■ J20Si and J16Si Series ry/ 55 Applications • Two-Color Temperature Measurements • Dual-Wavelength Power Meters Features • Dual-Wavelength Detection • Parallel Outputs • Si/Si or Si/Ge Sandwich
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D00033fl
J20Si
J16Si
-5A4-R03M
-5A4-R02M
-8A4-R02M
-8A4-R05M
3030bl0
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8A4 diode
Abstract: J20Si DIODE GE GE power diode Ge dual photodiode photodiode ge J20Si-SA4-R03M photodiode 1550 NEP pin Photodiode 1550 nm two color photodiode j20si
Text: E G & G/ CANADA/ OPTOELEK 47E 3030bl0 D D00Q33fl 2 • J20SÌ and J16SÌ Series T Features Applications • • • • • Dual-W avelength Detection P arallel Outputs Si/Si or S i/G e Sandwich CANA V/-55 - Two-Color Temperature M easurem ents Dual-W avelength Power Meters
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3D30bl0
D00G33fl
-5A4-R03M
-5A4-R02M
-8A4-R02M
-8A4-R05M
J16Si
8A4 diode
J20Si
DIODE GE
GE power diode
Ge dual photodiode
photodiode ge
J20Si-SA4-R03M
photodiode 1550 NEP
pin Photodiode 1550 nm
two color photodiode j20si
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