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Text: Silicon Avalanche Photodiode SAE-Series Red-Enhanced DESCRIPTION The SAE500VS epitaxial avalanche photodiode is a general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak
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Text: Silicon Avalanche Photodiode SAE-Series Red-Enhanced DESCRIPTION The SAE500VS epitaxial avalanche photodiode is a general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak
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avalanche photodiode bias and high voltage
Abstract: SAE500VS SAE500VX photodiode responsivity 1.1 avalanche photodiode bias
Text: Silicon Avalanche Photodiode SAE-Series Red-Enhanced DESCRIPTION The SAE500VS epitaxial avalanche photodiode is a general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak
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avalanche photodiode bias and high voltage
SAE500VX
photodiode responsivity 1.1
avalanche photodiode bias
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SAE230VX
Abstract: SAE500VX SAE500VS SAE500 avalanche photodiode
Text: Silicon Avalanche Photodiode SAE-Series Red-Enhanced DESCRIPTION The SAE500VS epitaxial avalanche photodiode is a general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak responsivity
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IAE080X
Abstract: InGaas PIN photodiode, 1550 sensitivity IAE200X iae200 rangefinding InGaas APD photodiode, 1550 sensitivity InGaas PIN photodiode, 1550 ,sensitivity InGaAs photodiode spectral response TO46 photodiode free space communication
Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at
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avalanche photodiode bias
Abstract: sae500vs
Text: Silicon Avalanche Photodiode SAE-Series Red-Enhanced DESCRIPTION The SAE500VS epitaxial avalanche photodiode is a general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak responsivity
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inGaAs photodiode 1550
Abstract: No abstract text available
Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE 200 avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at
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Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at
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InGaas PIN photodiode, 1550 NEP
Abstract: InGaAs Photodiode 1550nm photodiode 1550nm nep InGaas PIN photodiode, 1550 sensitivity InGaas APD photodiode, 1550 sensitivity InGaAs APD photodiode 1550 pin photodiode 2 GHz 1550 InGaAs Avalanche Photodiode IAG-Series avalanche 1550nm photodiode 5 Ghz IAG 080
Text: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at
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Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at
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IAG 080
Abstract: No abstract text available
Text: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at
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PerkinElmer Avalanche Photodiode
Abstract: PerkinElmer Optoelectronics C30737E-230 C30737E-500 C30737 C30737P-230 C30737P-500
Text: Optoelectronics C30737 Epitaxial Silicon Avalanche Photodiode Description Applications The C30737 type avalanche photodiode provides high responsivity between 500 nm and 1000 nm, as well as extremely fast rise times at all wavelengths with a frequency response up to 1.0 GHz. The active area
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LO09/01/04
PerkinElmer Avalanche Photodiode
PerkinElmer Optoelectronics
C30737E-230
C30737E-500
C30737P-230
C30737P-500
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Text: PHOTODIODE Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features Applications l High humidity resistance 85 ˚C, 85 %, 1000 h l Visible-compensation filter l Ceramic package (6 x 8 mm) l Active area: 2.8 × 2.4 mm l Light dimmer in locations at high humidity or for outdoor use
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Abstract: SE-171
Text: PHOTODIODE Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features l High humidity resistance 85 ˚C, 85 %, 1000 h l Visible-compensation filter l Ceramic package (6 x 8 mm) l Active area: 2.8 × 2.4 mm Applications l Light dimmer in locations at high humidity or for outdoor use
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Text: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited
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Text: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited
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transistor 1BW
Abstract: SE-171 1bw 85 S8265
Text: PHOTODIODE Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features Applications l High humidity resistance 85 ˚C, 85 %, 1000 h l Visible-compensation filter l Ceramic package (6 x 8 mm) l Active area: 2.8 × 2.4 mm l Light dimmer in locations at high humidity or for outdoor use
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transistor 1BW
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Abstract: No abstract text available
Text: Detectors Only available on request! InGaAs Avalanche Photodiode IAE-Series Description The IAE-series avalanche photodiode is a large area InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at 1550 nm is ideally
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Text: Si photodiode S8265 Visible sensitivity photodiode with high humidity resistance Features Applications High humidity resistance 85 °C, 85 %, 1000 h Light dimmer in locations at high humidity or for outdoor use Visible-compensation filter Ceramic package (6 x 8 mm)
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Text: IPD14-12-5T-2 rev 1.0 25.03.2015 Description IPD14-12-5T-2 is a InGaAs photodiode with a sensitivity range of 1000 – 1600 nm.The photodiode chip is disposed inside a TO-18 package and covered by a gold plated cap and window. Maximum Ratings TCASE=25°C
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IAE080X
Abstract: IAE200X InGaas PIN photodiode, 1550 sensitivity application rangefinding InGaAs APD photodiode 1550 inGaAs photodiode 1550 avalanche photodiode free space InGaas APD photodiode, 1550 sensitivity apd 1550 OTDR InGaas PIN photodiode, 1550 sensitivity
Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is a large area InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at 1550 nm is ideally suited to eyesafe rangefinding applications, free space optical
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Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is a large area InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at 1550 nm is ideally suited to eyesafe rangefinding applications, free space optical
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Text: HFD3855 Silicon PIN Photodiode DESCRIPTION The HFD3855 PIN Photodiode is designed for high speed use in fiber optic receivers. It has a large area detector, providing efficient response to 50 -1000 mm diameter fibers at wavelengths of 750 to 950 nanometers.The
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HFD3855
HFD3022
HFD3855s
FIBER033
FIBER051
RBER036
FIBER101
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FID08T13TX
Abstract: 08T13TX photodiode 850nm PIN photodiode 10 nm
Text: FID 08T13TX SILICON UN PHOTOnOK DESCRIPTION The FID08T13TX is a Si-PIN photodiode designed for use in optical local area network LAN system and optical data link system at 0.8jum wavelength region. A photodiode chip having 1000/xm 1mm diameter of photosensitive
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300MHz,
374T75b
FD08T13TX
08T13TX
photodiode 850nm
PIN photodiode 10 nm
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