NSL-4960
Abstract: NSL-4980 NSL-7910 4980 NSL-5910 NSL-4970 nsl 4960 NSL-4950 NSL-6910 silonex NSL
Text: TO-8 Photocells Hermetic Package Features • Five Photoconductive Materials • Tolerance: ±40% @1 ftc, ±33% @ 2 ftc Description The Silonex TO-8 series of photoconductive provide up to eight standard resistance ranges in CdS or CdSe materials. Absolute Maximum Ratings
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NSL-5920
NSL-5930
NSL-5940
NSL-6910
NSL-6920
NSL-6930
NSL-6940
NSL-7910
QF-84
NSL-4960
NSL-4980
NSL-7910
4980
NSL-5910
NSL-4970
nsl 4960
NSL-4950
NSL-6910
silonex NSL
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cds photocell
Abstract: cds cell Application note NORPS-12 NORPS-12 c 5200 10M15 photoconductive cells characteristic LA12 QF-84
Text: NORPS-12 CdS Photocell Plastic Package Description Absolute Ratings Maximum The NORPS-12 is a CdS photoconductive cell with a spectral response similar to that of the human eye, encapsulated in a moistureresistant coating and enclosed in a plastic casing.
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NORPS-12
NORPS-12
250mW
QF-84
cds photocell
cds cell
Application note NORPS-12
c 5200
10M15
photoconductive cells characteristic
LA12
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C1103
Abstract: No abstract text available
Text: INFRARED DETECTOR PbS photoconductive detector P394 series, P2532-01, P2682-01 Infrared detectors utilizing photoconductive effects Features Applications l Room temperature operation Makes PbS cells useful in a wide range of applications including radiation thermometers and flame monitors
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P2532-01,
P2682-01
SE-171
KIRD1019E05
C1103
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Untitled
Abstract: No abstract text available
Text: INFRARED DETECTOR MCT photoconductive detector P3257-31 TE-cooled type capable of detection up to 11.5 µm Features Applications l One-stage TE-cooled type l High-speed response l Easy-to-use infrared detector module with preamp is available l CO2 laser monitors
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P3257-31
A3179
C1103-07
P4631-10
SE-171
KIRD1052E01
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Untitled
Abstract: No abstract text available
Text: INFRARED DETECTOR PbSe photoconductive detector P791/P2038/P2680 series, P3207-05 Detection capability up 5 µm range TE-cooled type Hamamatsu provides various types of PbSe photoconductive cells including room temperature operation types and thermoelectrically cooled
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P791/P2038/P2680
P3207-05
SE-171
KIRDA1020E02
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Untitled
Abstract: No abstract text available
Text: INFRARED DETECTOR PbS photoconductive detector P394 series, P2532-01, P2682-01 Infrared detectors utilizing photoconductive effects Features Applications l Room temperature operation Makes PbS cells useful in a wide range of applications including radiation thermometers and flame monitors
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P2532-01,
P2682-01
SE-171
KIRD1019E03
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Untitled
Abstract: No abstract text available
Text: InSb photoconductive detectors P6606 series Thermoelectrically cooled detectors capable of long-term measurements Features Applications Thermoelectric cooling ensures high speed and high sensitivity up to 6.5 m. Environment measurements gas analysis, etc.
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P6606
A3179-01
A3179-04
C1103-05
C1103-07
C5185
P4631-03
P660e:
SE-171
KIRD1026E10
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photoconductive cells characteristic
Abstract: No abstract text available
Text: INFRARED DETECTOR PbSe photoconductive detector P791/P2038/P2680 series, P3207-05 Detection capability up 5 µm range TE-cooled type Hamamatsu provides various types of PbSe photoconductive cells including room temperature operation types and thermoelectrically cooled
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P791/P2038/P2680
P3207-05
SE-171
KIRDA1020E05
photoconductive cells characteristic
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N10110
Abstract: No abstract text available
Text: INFRARED DETECTOR InAs photovoltaic detector P8079 series, P7163 Infrared detectors with high sensitivity and high-speed response InAs photovoltaic detectors have high sensitivity and high-speed response in the near infrared region from 1.5 to 3.8 µm. These detectors offer better characteristics than PbSe photoconductive detectors.
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P8079
P7163
A31Telephone:
SE-171
KIRD1027E06
N10110
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Untitled
Abstract: No abstract text available
Text: PREVIOUS DATA INFRARED DETECTOR PbS photoconductive detector P9217 series Room-temperature detectors capable of detecting up to 2.9 µm P9217 is a PbS photoconductive detector with greatly improved stability and resistance to high temperatures as compared with conventional types.
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P9217
C3757-02
SE-171
KIRD1065E03
KIRDA0181EA
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Untitled
Abstract: No abstract text available
Text: INFRARED DETECTOR InSb photoconductive detector P6606 series Thermoelectrically cooled detectors capable of long-term measurements Features Applications l Thermoelectric cooling ensures high speed and high l Environment measurements gas analysis, etc. sensitivity up to 6.5 µm.
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P6606
A3179
A3179-01
A3179-04
C1103-05
C1103-07
SE-171
KIRD1026E06
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VT83N2
Abstract: No abstract text available
Text: Photoconductive Cell VT800 Series PACKAGE DIMENSIONS inch mm 5 2 ABSOLUTE MAXIMUM RATINGS Parameter Continuous Power Dissipation Derate Above 25°C Temperature Range Operating and Storage Symbol Rating Units PD ∆PD / ∆T 175 3.5 mW mW/°C TA –40 to +75
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VT800
R10/R100)
k100/10)
VT83N1
VT83N2
VT83N3
VT83N4
VT83N2
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PDB-C139
Abstract: PDB-C139F
Text: PHOTONIC Silicon Photodiode, Blue Enhanced Photoconductive DETECTORS INC. Type PDB-C139 , with daylight filter Type PDB-C139F PACKAGE DIMENSIONS INCH [mm] 0.213 [5.41] 0.090 [2.29] CLEAR PLASTIC PDB-C139 BLACK PLASTIC (PDB-C139F) Ø0.228 [5.80] CHIP ACTIVE
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PDB-C139
PDB-C139F
PDB-C139)
PDB-C139F)
PDB-C139
PDB-C139F
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nsl06
Abstract: LA12 NSL-06S53 Photoconductive Cell
Text: NSL-06S53 TO-18 Hermetic Photocell Description The NSL-06S53 is a Type 5 CdS photoconductive cell in a flat lens TO-18 package . 5.21 - 5.45 3.56 - 3.81 38 4.62 - 4.90 Absolute Maximum Ratings Operating & Storage Temp Power Dissipation @ 25°C 1 Voltage (peak AC or DC)
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NSL-06S53
NSL-06S53
QF-84
nsl06
LA12
Photoconductive Cell
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NSL-4962
Abstract: NSL-4932 4932 NSL-4912 photocells* nsl NSL-4922 NSL-4942 NSL-4952 5942 NSL-4982
Text: TO-8 Photocells Ceramic Package Features • Three photoconductive materials • Tolerance: ±40% @1 ftc, ±33% @ 2 ftc Description The Silonex TO-8 series of photoconductive cells provide up to eight standard resistance ranges in CdS or CdSe materials. Most of these devices are also
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NSL-4962
NSL-4972
NSL-4982
NSL-5912
NSL-5922
NSL-5932
NSL-5942
NSL-6922
NSL-6952
QF-84
NSL-4962
NSL-4932
4932
NSL-4912
photocells* nsl
NSL-4922
NSL-4942
NSL-4952
5942
NSL-4982
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scintillator
Abstract: "x-ray scanner" 16 Photodiode-Array common cathode photodiode 9 ELEMENT photoDIODE ARRAY c216 PDB-C216-S
Text: PHOTONIC X-RAY, Silicon Photodiode Array, Photoconductive with scintillation screen Type PDB-C216-S DETECTORS INC. PACKAGE DIMENSIONS INCH [mm] C L CL ±.005 [.13] .992 [25.20] .062 [1.57] .100 [2.54] ACTIVE AREA 1 .373 [9.47] .062 [1.57] COMMON CATHODE
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PDB-C216-S
100-PDB-C216-S
scintillator
"x-ray scanner"
16 Photodiode-Array
common cathode photodiode
9 ELEMENT photoDIODE ARRAY
c216
PDB-C216-S
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NSL-4460
Abstract: NSL-4470 NSL-4450 FTC 580 e/NSL-801
Text: SILONEX INC 23E BSSS571 GDQGa'iT □ SILONEX; 1 W A T T PHOTOCONDUCTIVE CELLS NSL-4400 SERIES FEATURES • High Power Dissipation Capability @ 25° C: 1000 mW - Hermetically Sealed 500 mW - Plastic Encapsulated 750 mW on demand* - Plastic Encapsulated • Maximum Operating Voltage:
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BSSS571
NSL-4400
/LL40\
NSL-4460
NSL-4470
NSL-4450
FTC 580
e/NSL-801
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power LED 650nm
Abstract: 1/Detector/"Detector IC"/"CD"/NSL-4960 NSL-4960 photoconductive cell cdse
Text: 5 OC 8255271 SILONEX INC SILO N EX SD IN C 0 0 2 1 9 _ 0 DE~Jfl25S271 t -4 1 -4 1 0 0 □□5 n 1 e] T r LU N tX TO-8 PHOTOCONDUCTIVE CELLS FEATURES NSL-2900, 3900, 4900 SERIES TO-8 • Th ree P h o to co n d u ctiv e M aterials • Po w er D issip atio n @ 25° C:
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Jfl25S271
NSL-2900,
power LED 650nm
1/Detector/"Detector IC"/"CD"/NSL-4960
NSL-4960
photoconductive cell cdse
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L0619
Abstract: No abstract text available
Text: 1 W ATT PHOTOCONDUCTIVE CELLS N SL-4400 SERIES FcA i bR :3 • High Power Dissipation Capability @ 25° C: 1000 mW - Hermetically Sealed 500 mW - Plastic Encapsulated 750 mW on dem and* - Plastic Encapsulated • Maximum Operating Voltage: 1000 V Peak AC or DC
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SL-4400
L0619
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NSL-7550
Abstract: 67Meg 200MEG NSL-7530 320v Silonex
Text: SILONEX ; Prelim inary Data Sheet TO -5 PHOTOCONDUCTIVE CELLS MATURES • S ix Photoconductive Materials • Power Dissipation @ 25°C 200 mW - Hermetically Sealed 12f5 mW - Plastic Encapsulated • Resistance Tolerance: ± 40% @ 1 Ftc ± 3 3 - 1 / 3 % & 2 Ftc
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NSL-3510
NSl-3520
NSl-3530
NSL-3540
HSl-4510
NSL-4520
NSL-4530
NSL-7550
67Meg
200MEG
NSL-7530
320v
Silonex
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cellule photoconductrice
Abstract: ORP30 ORP90 caracteristiques cellule photoconductrice philips ET-E 60 ORP 12 PHOTOCELL photocell orp 12 phot UBL1 CELLULE
Text: PHILIPS IÖRP9Ö CADMIUM SULFIDE PHOTOCONDUCTIVE CELL with side sensitivity CELLULE PHOTOCONDUCTRICE A SULFURE DE CADMIUM avec la surface sensible du côté lateral KADMIUMSULFID PHOTOLEITER fiir Lichteinfall von der Seite Application: Flame control, smoke detection, industrial
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Untitled
Abstract: No abstract text available
Text: E G & G/HEIMANN OPTOELE bSE D TDD3320 000007? 2fifl • HEIMANN Photoconductive Cells CdS A 90.00 0 5 ± O .2 • Epoxy Encapsulated • Small Dimensions R 1 0 [kQ ] 90.1112 90.1213 90.1314 90.1114 9-33 16-94 27-340 9 -340 Auto Dimmer for Digital Clock Streetlight Control
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TDD3320
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Untitled
Abstract: No abstract text available
Text: ^□'□3350 000007L. 341 E G & G/HEIMANN OPTOELE bSE D HEIMANN Photoconductive Cells CdS A 90.0 LO • Epoxy Encapsulated MM Applications • Small Dimensions • • Operating temperature - 20°C .+ 70°C • TV-Brightness Control • Room Light Control
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000007L.
characteris100
peratureof70Â
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NSL-4960
Abstract: photoconductive cell cdse silonex NSL cdse Photoconductive Cell Silonex NSL-395 PHOTOCELL NSL-2930 NSL-2940
Text: SILONEX INC 53E [ • ÛE55271 QDOOST? 7 ■ SILONEX i TO-8 PHOTOCONDUCTIVE CELLS f "F4|-4 FEATURES NSL-2900, 3900, 4900 SERIES • Three Photoconductive Materials TO-8 • Power Dissipation @ 25° C: 500 mW - Hermetically Sealed 250 mW - Plastic Encapsulated
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SS5271
NSL-4960
photoconductive cell cdse
silonex NSL
cdse
Photoconductive Cell
Silonex
NSL-395
PHOTOCELL
NSL-2930
NSL-2940
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