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    PHOTO-DIODE BIAS Search Results

    PHOTO-DIODE BIAS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADL5317ACPZ-REEL7 Analog Devices APD Bias Controller and Curren Visit Analog Devices Buy
    LT3571IUD#PBF Analog Devices 75V DC/DC Conv for APD Bias Visit Analog Devices Buy
    LT3571IUD#TRPBF Analog Devices 75V DC/DC Conv for APD Bias Visit Analog Devices Buy
    LT3571EUD#PBF Analog Devices 75V DC/DC Conv for APD Bias Visit Analog Devices Buy
    LT3571EUD#TRPBF Analog Devices 75V DC/DC Conv for APD Bias Visit Analog Devices Buy

    PHOTO-DIODE BIAS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MF-1134

    Abstract: SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL gas detector NDL5405 NDL5405C NDL5430C NDL5430CR NDL5471RC NDL5490 NDL5490L
    Text: PRELIMINARY DATA SHEET PHOTO DIODE NDL5430C Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS for 10 Gb/s f30 mm InGaAs PIN PHOTO DIODE DESCRIPTION NDL5430C Series are InGaAs PIN photo diodes for 10 Gb/s long wavelength transmission systems. It covers


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    PDF NDL5430C NDL5430C NDL5430CR MF-1134 SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL gas detector NDL5405 NDL5405C NDL5430CR NDL5471RC NDL5490 NDL5490L

    P781

    Abstract: P7816 DATASHEET OF IC 741 photo diode photoreflector KPCA0007EA KPCB0016EB KPCB0018EA KPCB0019EA KPCB0020EA
    Text: PHOTOREFLECTOR Photoreflector P7816 Thin package, photo IC diode output type photoreflector P7816 is a photoreflector using a photo IC diode on the output. The photo IC diode consists of a photodiode integrated with a current amplifier, and linearly amplifies and outputs the photocurrent generated in the photodiode. The two lead, current output allows operation just the same as


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    PDF P7816 P7816 SE-171 KPC1005E01 P781 DATASHEET OF IC 741 photo diode photoreflector KPCA0007EA KPCB0016EB KPCB0018EA KPCB0019EA KPCB0020EA

    TDA8808

    Abstract: TDA8808AT TDA8808T TDA8808T/C3
    Text: INTEGRATED CIRCUITS DATA SHEET TDA8808T TDA8808AT Photo diode signal processor for compact disc players Product specification File under Integrated Circuits, IC01 November 1987 Philips Semiconductors Product specification Photo diode signal processor for compact disc players


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    PDF TDA8808T TDA8808AT TDA8808 TDA8808AT TDA8808T TDA8808T/C3

    PDF PIN PHOTO DIODE DESCRIPTION

    Abstract: tda8808 TDA8808AT TDA8808T GCLF PHOTO diode
    Text: INTEGRATED CIRCUITS DATA SHEET TDA8808T TDA8808AT Photo diode signal processor for compact disc players Product specification File under Integrated Circuits, IC01 November 1987 Philips Semiconductors Product specification Photo diode signal processor for compact disc players


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    PDF TDA8808T TDA8808AT TDA8808 PDF PIN PHOTO DIODE DESCRIPTION TDA8808AT TDA8808T GCLF PHOTO diode

    hamamatsu CDs photoconductive

    Abstract: No abstract text available
    Text: PRELIMINARY PHOTO IC Photo IC diode S10085 Plastic package shaped the same as metal package S10085 photo IC diode has spectral response almost only the visible range. S10085 offers small torelance in different color temperatures than the conventional type S9648 . S10085 is encapsulated in a plastic package having the same shape as metal packages. The shape of S10085 also


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    PDF S10085 S10085 S9648) SE-171 KPIC1063E01 hamamatsu CDs photoconductive

    NDL5422P

    Abstract: VMA23
    Text: φ50 µm InGaAs PIN PHOTO DIODE BUTTERFLY MODULE WITH INTERNAL PRE-AMPLIFIER FOR 2.5 Gb/s NDL5422P FEATURES DESCRIPTION • INTERNAL Si PRE-AMPLIFIER IC The NDL5422P is an InGaAs PIN photo diode 6 pin butterfly package module incorporating silicon pre-amplifier IC. It is


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    PDF NDL5422P NDL5422P GI-50/125 24-Hour VMA23

    Microsemi LX3055

    Abstract: photo diode 10 Gbps LX3055 1550nm photodiode 1.6 Ghz VCSEL 1550 nm 1 Gbps 1550nm VCSEL InGaAs Photodiode 1550nm PHOTO diode
    Text: LX3055 TM Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET Microsemi’s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offer high responsivity, low dark current, and


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    PDF LX3055 1310nm 1550nm LX3055 Microsemi LX3055 photo diode 10 Gbps 1550nm photodiode 1.6 Ghz VCSEL 1550 nm 1 Gbps 1550nm VCSEL InGaAs Photodiode 1550nm PHOTO diode

    OF3603N-F5

    Abstract: PDF PIN APD DIODE DESCRIPTION sc technical drawing PEDF3603N-F5-01
    Text: PEDF3603N-F5-01 1Electronic Components OF3603N-F5 This version: Nov. 2000 1310 nm SMT Avalanche Photo Diode Module with Single Mode Fiber GENERAL DESCRIPTION The surface mount type APD-Preamp module is a avalanche photo diode coupled to a single mode fiber with a


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    PDF PEDF3603N-F5-01 OF3603N-F5 STM16/OC48. OF3603N-F5 PDF PIN APD DIODE DESCRIPTION sc technical drawing PEDF3603N-F5-01

    1550nm photodiode 1.6 Ghz

    Abstract: 1550nm photodiode 5 Ghz LX3055 InGaAs Photodiode 1550nm
    Text: LX3055 TM Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET Microsemi’s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offers high responsivity, low dark current, and


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    PDF LX3055 1310nm 1550nm LX3055 1550nm photodiode 1.6 Ghz 1550nm photodiode 5 Ghz InGaAs Photodiode 1550nm

    OF3604N-F5

    Abstract: PDF PIN APD DIODE DESCRIPTION OF3603N-F5 PDEF3604N-F5-01 PEDF3604N-F5-01
    Text: PEDF3604N-F5-01 1Electronic Components OF3604N-F5 This version: Nov. 2000 1310 nm SMT Avalanche Photo Diode Module with Single Mode Fiber GENERAL DESCRIPTION The surface mount type APD-Preamp module is a avalanche photo diode coupled to a single mode fiber with a


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    PDF PEDF3604N-F5-01 OF3604N-F5 STM16/OC48. OF3604N-F5 PDF PIN APD DIODE DESCRIPTION OF3603N-F5 PDEF3604N-F5-01 PEDF3604N-F5-01

    HIGH VOLTAGE DIODE kv

    Abstract: C8237 H8236-07 H8236-40 GaAsP Laser Diode Hamamatsu avalanche diode
    Text: HPD HYBRID PHOTO-DETECTOR MODULES H8236-07, -40 PRELIMINARY DATA OCT. 2000 PATENT PENDING The HPD (Hybrid Photo-Detector) is a new vacuum photo-detector including a photocathode and an avalanche diode. The HPD provides a gain of more than 1000 in a single multiplication


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    PDF H8236-07, SE-171-41 TPMO1011E03 HIGH VOLTAGE DIODE kv C8237 H8236-07 H8236-40 GaAsP Laser Diode Hamamatsu avalanche diode

    ic 741 datasheet

    Abstract: S7565 s7805 S7805-10 ETC 529 DIODE
    Text: PHOTO IC Photo IC diode NEW S7565, S7805-10 Linear current amplification photo IC for visible range S7565 and S7805-10 amplify the photocurrents generated in the photodiode and provide adequate output current equal to that obtained from large active area photodiodes. These photo ICs can be used in a wide range of applications involving visible light


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    PDF S7565, S7805-10 S7565 S7805-10 S7565 S7805-10: SE-171 KPIC1040E01 ic 741 datasheet s7805 ETC 529 DIODE

    Untitled

    Abstract: No abstract text available
    Text: PHOTO IC Photo IC diode S7565, S7805-10 Linear current amplification photo IC for visible range S7565 and S7805-10 amplify the photocurrents generated in the photodiode and provide adequate output current equal to that obtained from large active area photodiodes. These photo ICs can be used in a wide range of applications involving visible light


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    PDF S7565, S7805-10 S7565 S7805-10 S7565 S7805-10: SE-171 KPIC1040E01

    OD9603N

    Abstract: sc technical drawing PEDF9603N-01
    Text: PEDF9603N-01 1Electronic Components OD9603N This version: Nov. 2000 1310 nm SMT Photo Diode Module with Single Mode Fiber GENERAL DESCRIPTION The surface mount type PD-Preamp module is a 1.3 µm InGaAs PIN photo diode coupled to a single mode fiber with a pigtail. It is designed for STM16/OC48.


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    PDF PEDF9603N-01 OD9603N STM16/OC48. OD9603N sc technical drawing PEDF9603N-01

    s11154-01ct

    Abstract: No abstract text available
    Text: Photo IC diode S11154-01CT Reduced color temperature errors The S11154-01CT is a photo IC diode with spectral response characteristics that closely resemble human eye sensitivity. Two active areas are formed on the same chip, and the outputs of the two active areas are subtracted from each other by the current


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    PDF S11154-01CT S11154-01CT SE-171 KPIN1076E06

    S11154-01CT

    Abstract: S11252-01WT S9705 sensor S9705 S1125
    Text: Photo IC diode S11154-01CT Reduced color temperature errors The S11154-01CT is a photo IC diode with spectral response characteristics that closely resemble human eye sensitivity. Two active areas are formed on the same chip, and the outputs of the two active areas are subtracted from each other by the current


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    PDF S11154-01CT S11154-01CT SE-171 KPIN1076E06 S11252-01WT S9705 sensor S9705 S1125

    Untitled

    Abstract: No abstract text available
    Text: Photo IC diode S7565 Linear current amplification photo IC for visible range The S7565 amplifies the photocurrents generated in the photodiode and provides adequate output current equal to that obtained from large active area photodiodes. This photo IC can be used in a wide range of applications involving visible light detection.


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    PDF S7565 S7565 SE-171 KPIC1040E03

    nec NDL1202

    Abstract: No abstract text available
    Text: DATA SHEET NEC PHOTO DIODE NDL1202 aECTOON DEVICE OPTICAL FIBER COM MUNICATION SILICO N AVALANCHE PHOTO DIODE DESCRIPTION NDL1202 is an Avalanche Photo Diode especially designed for a detector of large capacity and long distance optical fiber communication systems. It has a high speed response time and a wide spectral sensitivity between 500 and 1 000 nm.


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    PDF NDL1202 NDL1202 1987M nec NDL1202

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET PHOTO DIODE NEC NDL1202 ELECTRON DEVICE OPTICAL FIBER COMMUNICATION SILICON AVALANCHE PHOTO DIODE DESCRIPTION NDL1202 is an Avalanche Photo Diode especially designed for a detector of large capacity and long distance optical fiber communication systems. It has a high speed response time and a wide spectral sensitivity between 500 and 1 0 0 0 nm.


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    PDF NDL1202 NDL1202 tj427S2S 19S7M

    l1202

    Abstract: nec A 1383
    Text: DATA SHEET NEC PHOTO DIODE N D L1202 ELECTRON DEVICE OPTICAL FIBER COMMUNICATION SILICON AVALANCHE PHOTO DIODE DESCRIPTION NDL1202 is an Avalanche Photo Diode especially designed for a detector of large capacity and long distance optical fiber communication systems. It has a high speed response time and a wide spectral sensitivity between 500 and 1 000 nm.


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    PDF L1202 NDL1202 1987M l1202 nec A 1383

    LED pigtailed

    Abstract: Diode PH 13M
    Text: M itsubishi O ptical D e vice C la ssifica tio n Item LD modules Wave length •1.3jum/1.55j«m Laser diode •0.98um/1.48Mm for pump Laser diode •InGaAs-PIN Photo diode •InGaAs-APO Photo diode •active diameter ¿20/* m ~«4300^m Device Package •TO CAN, Chip-on-Carrier


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    PDF STM-4/OC-12, LED pigtailed Diode PH 13M

    nec 2502 4 pin

    Abstract: UPD75308 T-41-67 PD6120 PH503 photo amplifier application circuit c1339g 1339g Micro Servo
    Text: N E C 30E D ELECTRONICS INC b4S7525 G0 a i b 3 1 2 • PHOTO DIODE PH 503 PIN PHOTO DIODE BUILT IN l-V AMPLIFIER DETECTOR FOR CD, OPTICAL DISC MEMORY P A C K A G E D IM E N S IO N S U nit : mm 6.9 ±0.2 P H 503 is 6 elements P IN Photo Diode built in l-V A m p li­


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    PDF b4S7525 PH503 1339G PD6353G PH503 UPD6355G UPD6353G SE303A-C PH302C, PH310 nec 2502 4 pin UPD75308 T-41-67 PD6120 photo amplifier application circuit c1339g 1339g Micro Servo

    TDA8808

    Abstract: FHFM 103 plastic Disc Capacitors 808T SI 7300 S028 TDA8808AT TDA8808T
    Text: TD A 8808T TDA8808AT PHOTO DIODE SIGNAL PROCESSOR FOR COMPACT DISC PLAYERS GENERAL DESCRIPTION The TDA8808 is a bipolar integrated circuit designed fo r use in compact disc players w ith a single spot read-out system. It amplifies the photo-diode signals and processes the error signals fo r the


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    PDF TDA8808T TDA8808AT TDA8808 TDA8808T TDA8808AT 711002b FHFM 103 plastic Disc Capacitors 808T SI 7300 S028

    NDL2102

    Abstract: No abstract text available
    Text: DATA SHEET NEC PHOTO DIODE NDL2102 ELECTRON DEVICE OPTICAL FIBER COMMUNICATION SILICO N PIN PHOTO DIODE DESCRIPTIO N NDL2102 is an epitaxial PIN photodiode detectors with excellent quantum efficiency, switching speed, and spectral range. This photodetector is designed for a detector of communications system and as general purpose detectors for 550 to 950 nm


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    PDF NDL2102 NDL2102 L2102 1987M