R6094 pmt divider circuit
Abstract: Hamamatsu r6094 C9321CA-02 R4110U-74 AUTOMATIC STREET LIGHT CONTROLLER using IR sensor InGaas PIN photodiode chip back illuminated apd raman wafer 60g H9656 sensor x-ray
Text: New CCD for Low-Light Scientific Applications High-Speed InGaAs APD + TIA ROSA Highly Sensitive Image Intensifier with Large Active Area Flat-Panel Sensor Product Line Extended The Improved Macro Imaging System AEQUORIA Imaging-Based Plate Reader FDSS for HighThroughput
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31-Nov
R6094 pmt divider circuit
Hamamatsu r6094
C9321CA-02
R4110U-74
AUTOMATIC STREET LIGHT CONTROLLER using IR sensor
InGaas PIN photodiode chip back illuminated
apd raman
wafer 60g
H9656
sensor x-ray
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cds photo diode
Abstract: diode assembly
Text: PHOTO IC Photo IC diode assembly S10108, S10109 For flame eye/using photo IC diode RoHS compliance instead of CdS cell S10108 and S10109 sensors are designed specifically for flame detection (flame eye) in oil-fired hot water boilers and heaters. These sensors incorporate a photo IC diode instead of conventional CdS cells and are available with 2 types of incident light direction (head-on
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S10108,
S10109
S10108
S10109
S10108:
S10109)
SE-171
KPIC1066E01
cds photo diode
diode assembly
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cds photo diode
Abstract: S10108
Text: PHOTO IC Photo IC diode assembly S10108, S10109 For flame eye/using photo IC diode RoHS compliance instead of CdS cell S10108 and S10109 sensors are designed specifically for flame detection (flame eye) in oil-fired hot water boilers and heaters. These sensors incorporate a photo IC diode instead of conventional CdS cells and are available with 2 types of incident light direction (head-on
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S10108,
S10109
S10108
S10109
S10108:
S10109)
SE-171
KPIC1066E01
cds photo diode
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Untitled
Abstract: No abstract text available
Text: Photo IC diode assemblies S10108, S10109 For flame eye, using photo IC diode instead of CdS cell The S10108 and S10109 sensors are designed specifically for flame detection flame eye in oil-fired hot water boilers and heaters. These sensors incorporate a photo IC diode instead of CdS cells and are available with 2 types of incident light
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S10108,
S10109
S10108
S10109
S10108:
S10109)
B1201,
KPIC1066E02
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UIC1001
Abstract: UIC4001CP mouse microcontroller matrix receiver digital optical quadrature SENSOR EM84502 quadrature mouse phototransistor mouse Phototransistor HLMP-ED80 mouse optical receiver circuit diagram
Text: Version: 15 July 2004 UIC1001 Solid-State Optical Mouse Sensor with Quadrature Outputs Functional Description The UIC1001 is a reflective optical sensor that provides a non-mechanical tracking engine for implementing a standard mouse. It is based on optical navigation technology that measures
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UIC1001
UIC1001
18pin
HLMP-ED80
UIC4001CP
UIC4001CP
mouse microcontroller
matrix receiver digital
optical quadrature SENSOR
EM84502
quadrature mouse phototransistor
mouse Phototransistor
HLMP-ED80
mouse optical receiver circuit diagram
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H10769A
Abstract: H10770A H7422
Text: NEWS 01 2010 SOLID STATE PRODUCTS PAGE 10 New silicon infrared enhanced photodiodes for scientific measurement and YAG laser monitoring SOLID STATE PRODUCTS CCD image sensors S11510 series PAGE 12 ELECTRON TUBE PRODUCTS Side-on PMT R9876, R11540 PAGE 25 SYSTEMS PRODUCTS
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S11510
R9876,
R11540
photomultiD-82211
DE128228814
H10769A
H10770A
H7422
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0256C
Abstract: photodiode ADC laptop circuit board diagram uv photodiode, GaP UV photodiodes 254 OPT0256C
Text: PRODUCT INFORMATION OPT 0256C Oct/2002 OPT 0256C Stand-Alone UV-VIS Photo Detecting Array with ADC The photo detecting array OPT 0256C represents a new generation of highly accurate optical sensors for integrated solutions. Each photodiode is equipped with its own
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0256C
Oct/2002
24-pin
0256C
6251-581-1PI
D-79108
D-79008
photodiode ADC
laptop circuit board diagram
uv photodiode, GaP
UV photodiodes 254
OPT0256C
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MOS RM3
Abstract: No abstract text available
Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing
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XO035
XO035
35-micron
MOS RM3
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MOS RM3
Abstract: mos rm3 data XO035 Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"
Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing
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XO035
XO035
35micron
MOS RM3
mos rm3 data
Silicon Image 1364
cmos transistor 0.35 um
analog devices transistor tutorials
"X-Fab" Core cell library
6E-08
opto mos application
ESD "p-well" n-well"
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hamamatsu CDs photoconductive
Abstract: No abstract text available
Text: PRELIMINARY PHOTO IC Photo IC diode S10085 Plastic package shaped the same as metal package S10085 photo IC diode has spectral response almost only the visible range. S10085 offers small torelance in different color temperatures than the conventional type S9648 . S10085 is encapsulated in a plastic package having the same shape as metal packages. The shape of S10085 also
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S10085
S10085
S9648)
SE-171
KPIC1063E01
hamamatsu CDs photoconductive
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Untitled
Abstract: No abstract text available
Text: PHOTO IC Photo IC diode S9648 Plastic package shaped the same as metal package S9648 photo IC has spectral response close to human eye sensitivity. Two active areas are made on a single chip. Almost only the visible range can be measured by finding the difference between the two output signals in the internal current amplifier circuit. Compared to the conventional
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S9648
S9648
SE-171
KPIC1057E02
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startac
Abstract: davq
Text: ADVANCE INFORMATION OPT 0256C Photo Detector Array IC Edition May 15, 2002 6251-581-1AI MICRONAS OPT 0256C ADVANCE INFORMATION Contents Page Section Title 3 1. Introduction 4 4 4 4 4 5 6 7 7 7 7 7 7 7 7 7 8 8 9 9 9 9 9 9 11 2. 2.1. 2.2. 2.2.1. 2.3. 2.4. 2.4.1.
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0256C
6251-581-1AI
0256C
startac
davq
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S9648
Abstract: No abstract text available
Text: PHOTO IC Photo IC diode S9648 Plastic package shaped the same as metal package S9648 photo IC has spectral response close to human eye sensitivity. Two active areas are made on a single chip. Almost only the visible range can be measured by finding the difference between the two output signals in the internal current amplifier circuit. Compared to the conventional
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S9648
S9648
SE-171
KPIC1057E01
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human detection sensors schematic diagram
Abstract: S9648-100 hamamatsu CDs photoconductive cells kk cds photo diode hamamatsu CDs photoconductive s9648 KPIC1057E03 SE-171 schematic photo diode
Text: PHOTO IC Photo IC diode S9648-100 Plastic package shaped the same as metal package The S9648-100 photo IC has spectral response close to human eye sensitivity. Two active areas are made on a single chip. Almost only the visible range can be measured by finding the difference between the two output signals in the internal current amplifier circuit. Compared to the
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S9648-100
S9648-100
SE-171
KPIC1057E03
human detection sensors schematic diagram
hamamatsu CDs photoconductive cells kk
cds photo diode
hamamatsu CDs photoconductive
s9648
KPIC1057E03
schematic photo diode
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S9648-100
Abstract: s9648
Text: Photo IC diode S9648-100 Plastic package shaped the same as metal package The S9648-100 photo IC has spectral response close to human eye sensitivity. Two active areas are made on a single chip. Almost only the visible range can be measured by finding the difference between the two output signals in the internal current amplifier
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S9648-100
S9648-100
SE-171
KPIC1057E04
s9648
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RAL9003-HR
Abstract: gretagmacbeth 6566
Text: Farbsensor/ Color sensor PCS-II Spezifikation/ Specification 1 Elektrische Anschlüsse/ Electrical interfaces Die elektrischen Anschlüsse des PCS-II zeigt Fig. 1./ The electrical connections of the PCS-II Shows Fig. 1. Fig. 1: Elektrische Anschlüsse am Sensor/ Electrical interfaces
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Untitled
Abstract: No abstract text available
Text: 635nm Pure Red Laser Diode Datasheet RLD63NZC5 series Application Features • Leveling • Ranging • Sensor • Bar-code reader • Laser pointer Features 1 LD anode common 2) PD cathode common 3) 5.6CAN 3pin package Absolute maximum ratings Tc= 25°C)
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635nm
RLD63NZC5
R1102A
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schematic photo diode
Abstract: s9648
Text: Photo IC diode S9648-100 Plastic package shaped the same as metal package The S9648-100 photo IC has spectral response close to human eye sensitivity. Two photosensitive areas are made on a single chip. Almost only the visible range can be measured by finding the difference between the two output signals in the internal
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S9648-100
S9648-100
KPIC1057E05
schematic photo diode
s9648
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YNV-C02
Abstract: YEC YNV-C02 inverter ynv-c02 TX38D81VC1CAB lcd inverter ynv-c02 DAC-07B035 YEC YNV-C01 delta DAC 09B017 inverter yec DAC-09B017
Text: TravelMate2200/2700&Aspire1670 Service Guide Service guide files and updates are available on the AIPG/CSD web; for more information, please refer to http://csd.acer.com.tw PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on TravelMate2200/2700 & Aspire1670 service guide.
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TravelMate2200/2700
Aspire1670
TravelMate2200/2700
Aspire1670
YNV-C02
YEC YNV-C02
inverter ynv-c02
TX38D81VC1CAB
lcd inverter ynv-c02
DAC-07B035
YEC YNV-C01
delta DAC 09B017
inverter yec
DAC-09B017
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Photodiodes
Abstract: GaAsP Laser Diode PHOTO SENSORS insb diode led uv
Text: Types and Applications of Hamamatsu Opto-semiconductors Products ' Hiqh fcneigy Particles Si Photodiodes — UV 1— Visible I Hiqti Ene'sy P h /s « i lAJtinai MediCirt liviustrial w ^ u n n g tn rw ra ritc UV Enhanced Si Photodiodes Pollution Anaiv/t's,. ‘¿ pat iroptwlorr,ôtera
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phototransistor sensor
Abstract: FPA700A FPA700 FPA710 FPA710A FPA720 FPA720A phototransistor array element sensor
Text: 1-111 Photo Sensors Cont’d Matching Factor •oilT(Min) Device No. Description •oUT(Max) VcE(sat) <CE(lt) Ip = 50 mA H = 10 m W /cm 2 H = 20 m W /cm 2 v CEO lç = 500 mA VCE = 5.0 V ■CE lg - 1.0 mA Tung. @ 2854°K mA V V mA Distance = 0 .0 5 ' Typ
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FPA700
FPA700A
FPA710
12-Element
FPA710A
FPA720
10-Element
FPA720A
phototransistor sensor
phototransistor array
element sensor
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Cds cell
Abstract: mkb7h38 dual Cds cell
Text: o n mm SILICON RS E i SENSORS PHOTOCONDUCTIVE CELLS <CdS • CdSe) Cadmium Sulfide CdS) and Cadmium Selenium (CdSe) photocells are available in hermetically sealed, plastic coated, ceramic coated and plastic packages. These devices are offered in a wide range of standard resistances. Each product
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MPY-76C59X
MPY-54C69X
MPY-54C348X
MPY-20C59
MPY-12C49
MPY-12C28
PY-12C
MPY-54C679
MPY-5H37
Cds cell
mkb7h38
dual Cds cell
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Silicon Photocells
Abstract: S1010 photocell encoder silicon photocell Silicon Sensors, Inc s05025 s1020 S0520
Text: Silicon Photocell Sensors Texas Optoelectronics, Inc. SILICON PHOTOCELL SENSORS TOI silicon photocells are employed in photometer, switching, position detection, tape and disc EOTBOT sensing, solar energy conversion, and other numerous applications. Silicon photosensors with
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S05025
S0505
S0510
000D524
Silicon Photocells
S1010
photocell encoder
silicon photocell
Silicon Sensors, Inc
s1020
S0520
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CCD151
Abstract: fairchild ccd CAM1600R
Text: Fairchild Imaging Sensors C A M 1600R Line Scan Camera 3456 - ELEMENTS CAM1600R FEATURES High resolution: 3456 elements per line. Compact enclosure. Burled channel CCD sensor. Clock controlled operation-digital system compatibility. Dynamic range: >1000:1.
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1600R
CAM1600R
CCD151
fairchild ccd CAM1600R
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