Untitled
Abstract: No abstract text available
Text: NJL7502L Ambient Light Sensor GENERAL DESCRIPTION The NJL7502L is the photo transistor which spectral response is similar to human eye. FEATURES 1. Peak wavelength 560 nm 2. Photo current 33 A typ. Condition : White LED, 100Lux 3. Lead pin package APPLICATIONS
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NJL7502L
NJL7502L
100Lux
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NJL7502L
Abstract: njl7502
Text: NJL7502L Ambient Light Sensor GENERAL DESCRIPTION The NJL7502L is the photo transistor which spectral response is similar to human eye. FEATURES 1. Peak wavelength 560 nm 2. Photo current 33 A typ. Condition : White LED, 100Lux 3. Lead pin package APPLICATIONS
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NJL7502L
NJL7502L
100Lux
njl7502
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NJL7502L
Abstract: No abstract text available
Text: NJL7502L Ambient Light Sensor GENERAL DESCRIPTION The NJL7502L is the photo transistor which spectral response is similar to human eye. FEATURES 1. Peak wavelength 560 nm 2. Photo current 33 µA typ. Condition : White LED, 100Lux 3. Lead pin package
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NJL7502L
NJL7502L
100Lux
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K 2645 transistor
Abstract: TRANSISTOR K 2645 transistor MOC8030 MOC8050 MOTOROLA OPTOELECTRONIC K 2645 schematic
Text: MOC8050 MOC8030 80-VOLT OPTOELECTRONIC COUPLER . . . Gallium Arsenide LED optically coupled to a Silicon Photo Darlington Transistor designed for applications requiring electrical isolation, high breakdown voltage, and high current transfer ratios. Characterized for use as telephony relay drivers but provides excellent
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MOC8050
MOC8030
80-VOLT
8S036
DS-2645-R1
K 2645 transistor
TRANSISTOR K 2645 transistor
MOC8030
MOC8050
MOTOROLA OPTOELECTRONIC
K 2645 schematic
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Untitled
Abstract: No abstract text available
Text: DATA SHEET OLH2047/OLH2048/OLH2049: Photo-Transistor Hermetic Optocouplers Features • Current Transfer Ratio CTR guaranteed over –55 °C to +100 °C ambient temperature range • 2500 V electrical isolation • Standard 8-pin DIP configuration • High CTR at low input current
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OLH2047/OLH2048/OLH2049:
OLH2047,
OLH2048,
OLH2049
202294B
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MM-222
Abstract: photo flash capacitor
Text: AMOS TECHNOLOGY LIMITED R2a MM222 LIGHT-SENSE WITH LED DRIVER by external photo transistor DATA SHEET FEATURES • • • • • • • Wide battery operating voltage range : 2.4V to 5.1V. Typical operating current : 100uA, VDD = 3.0V. Flashing LED upon valid detection
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MM222
100uA,
50/60Hz)
MM222
500ms
MM-222
photo flash capacitor
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TRANSISTOR D 2627
Abstract: 4N32 4N33 MOTOROLA 4N29 4N29A 4N31 4N32A 2N6165 4N324
Text: 4N29,4H29A 4H30 4H31 4N32.4N324 NPN PHOTOTRANSISTOR AND PN INFRARED EMITTING DIODE . . . Gallium Arsenide LED optically coupled to a Silicon Photo Darlington Transistor designed for applications requiring electrical, isolation, high-current transfer ratios, small package size and low
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4H29A
4N324
60HZA
1N4003
2N6165
l-J77/3
TRANSISTOR D 2627
4N32
4N33 MOTOROLA
4N29
4N29A
4N31
4N32A
2N6165
4N324
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Untitled
Abstract: No abstract text available
Text: AMOS TECHNOLOGY LIMITED R4a MM216 LIGHT-SENSE ASIC by external photo transistor DATA SHEET FEATURES • • • • • • • • Wide battery operating voltage range : 3.3V to 5.1V. Typical operating current : 150uA, VDD = 4.5V. Trigger pulse with controlled width on valid detection
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MM216
150uA,
50/60Hz)
MM216
125ms.
500ms
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optical detector
Abstract: EE-SY201 IR object DETECTOR
Text: Photomicrosensor EE-SY201 Reflective Dimensions Note: Features All units are in millimeters unless otherwise indicated. • The LED requires a forward current of only 5 mA due to the Photo-Darlington transistor built into the detector. • With a red LED light source.
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EE-SY201
optical detector
EE-SY201
IR object DETECTOR
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ge 4n25
Abstract: a4N26 2N27 4N25 application notes ge 4n26 4N25A VLS07 4N26 4N27 4N28
Text: 4N25, 4N25A 4N26 4N27 4N28 o NPN PHOTOTRANSISTOR PN INFRARED EMITTING AND DIODE . . . Gallium Arsenide LED optically coupled to a Silicon Photo Transistor designed for applications requiring electrical isolation, high-current transfer ratios, small package size and low cost; such as interfacing and coupling svstems, phase and
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4N25A
ge 4n25
a4N26
2N27
4N25 application notes
ge 4n26
4N25A
VLS07
4N26
4N27
4N28
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TRANSISTOR SMD MARKING CODE p1
Abstract: EL series SMD transistor 815Y EL852 smd transistor S1 TRANSISTOR SMD MARKING CODE 4 pin dip photo transistor smd code s1 TRANSISTOR
Text: 4 PIN DIP HIGH VOLTAGE PHOTO DARLINGTON EL852 Series TRANSISTOR PHOTOCOUPLER Features: • High collector- emitter voltage VCEO=350V • Current transfer ratio (CTR: 1000% min. at IF =1mA, VCE =2V) • High isolation voltage between input and output (Viso=5000 V rms )
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EL852
DPC-0000056
TRANSISTOR SMD MARKING CODE p1
EL series SMD transistor
815Y
smd transistor S1
TRANSISTOR SMD MARKING CODE
4 pin dip photo transistor
smd code s1 TRANSISTOR
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TRANSISTOR DNH
Abstract: PS5022 PS1191RA PP1101W PS1101RA PS1101WA PS1102HA PS1192FA PS1192HA peak spectral response 900 nm photo detector
Text: CHARACTERISTICS AND ABSOLUTE MAXIMUM RATING BY MATERIAL n Photo Transistor Through-Hole Shape Absolute Maximum Ratings Collector-Emitter Emitter-Collector Breakdown Collector Breakdown Collector Operating Voltage Dissipation Voltage Current Temp. Part Number
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30MIN.
15MIN.
17MIN.
14MIN.
TRANSISTOR DNH
PS5022
PS1191RA
PP1101W
PS1101RA
PS1101WA
PS1102HA
PS1192FA
PS1192HA
peak spectral response 900 nm photo detector
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Untitled
Abstract: No abstract text available
Text: 8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER 6N135 6N136 EL450x Series Schematic 6N135 / 6N136 Features • High speed 1Mbit/s • High isolation voltage between input and output Viso=5000 Vrms • Guaranteed performance from 0°C to 70°C • Wide operating temperature range of -55°C to 100°C
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6N135
6N136
EL450x
6N136
EL4502
EL4503
DPC-0000112
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Untitled
Abstract: No abstract text available
Text: 4 PIN DIP HIGH VOLTAGE PHOTO DARLINGTON EL852 Series TRANSISTOR PHOTOCOUPLER Features: • High collector- emitter voltage VCEO=350V • Current transfer ratio (CTR: 1000% min. at IF =1mA, VCE =2V) • High isolation voltage between input and output (Viso=5000 V rms )
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EL852
DPC-0000056
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Untitled
Abstract: No abstract text available
Text: Sensors Sensors Sensors FEmitters 1 Infrared LEDs (1) Principle In the absence of an externally applied voltage, the P-N junction of a diode will be at thermal equilibrium and the Fermi levels of the P layer and N layer will be equal (Fig. 1 (a). In this case, the height of the potential barrier will
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MOC3040 equivalent
Abstract: MOC3043 equivalent H21A1 PINS MOC3031 equivalent MOC3040 and applications H22B1 equivalent ISP817 IS606 moc3040 ISP521-1
Text: PHOTO TRANSISTOR General Purpose 4 and 6 Pin Packages; 6 Pin DIP - Safety Approvals: UL, CSA, VDE 0884, BSI, NEMKO, DEMKO, SEMKO, and FIMKO *Note 1 Part Number Features H24A1 Current Transfer Ratio IF = 10mA Min % Isolation Test Voltage (KV) Continuous Forward
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H24A1
H24A2
H24A3
H24A4
H11A1
H11A2
H11A3
H11A4
H11A5
ISRX166012
MOC3040 equivalent
MOC3043 equivalent
H21A1 PINS
MOC3031 equivalent
MOC3040 and applications
H22B1 equivalent
ISP817
IS606
moc3040
ISP521-1
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TLP507
Abstract: TLP507A
Text: TO SH IBA TLP507A TOSHIBA PHOTO-INTERRUPTER INFRARED LED + PHOTODARLINGTON TRANSISTOR TLP507A HIGH-POWER AMPLIFIER APPLICATIONS AUTOMATIC CONTROL UNITS POSITION AND ROTATIONAL SPEED SENSORS The TLP507A photo-interrupter features a high current transfer ratio 1^;/Ijr .
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TLP507A
TLP507A
TLP507
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njl7502
Abstract: NJL7502L FAP-I
Text: NJL7502L W r t.« # Ambient Light Sensor • GENERAL DESCRIPTION The NJL7502L is the photo transistor which spectral response is similar to human eye. ■ ■ FEATURES 1. Peak wavelength 560 nm 2. Photo current 3. Lead pin package 33pAtyp. Condition : White LED, 100Lux
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NJL7502L
NJL7502L
33pAtyp.
100Lux
ELECTRO-10
njl7502
FAP-I
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omron Ly 2
Abstract: EE-SY201
Text: omRon EE-SY201 Low-cost Reflective PhotoDarlington Output Requires Low Driving Input • Only 5-mA forward current required by the LED ■ Best suited to drive CMOS IC ■ Incorporating an LED emitter and Photo-Darlington Transistor receiver Ordering Information
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EE-SY201
omron Ly 2
EE-SY201
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPS616 TOSHIBA PHOTO TRANSISTOR • ■ SILICON NPN EPITAXIAL PLANAR MF FLOPPY DISK DRIVE VCR POSITION DETECTOR OF HOME ELECTRIC EQUIPMENT OPTO-ELECTRONIC SWITCH • ^ 3.1mm epoxy resin package, black • Light current • Half value angle : 6 i= +30° (TYP.)
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TPS616
TLN119
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TIL186
Abstract: No abstract text available
Text: TILI 86-1, TILI 86-2, TIL186-3, TIL186 4 AC INPUT OPTOCOUPLERS 0 2 9 8 1 , DECEMBER 1 9 8 6 -R E V IS E D JUNE 198 9 • A-C Signal Input • Choice of Four Current Transfer Ratios • Gallium Arsenide Dual-Diode Infrared Sources Coupled to a Silicon NPN Photo-Transistor
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TIL186-3,
TIL186
E65085
aA186
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transistor circuit
Abstract: 357 photo
Text: O K I electronic components OC33 PHOTO COUPLER GENERAL DESCRIPTION The OC33 is a combination of a light emission diode GaAs LED and a light receiving silicon photo transistor. FEATURES • Current transfer ratio: 20% min. • Isolation voltage: 1,000 V min.
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2x10a
5x10a
5x102
transistor circuit
357 photo
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cd photo detector
Abstract: No abstract text available
Text: Sensors Sensors Sensors •Em itters 1 Infrared LEDs 1) Principle In the absence of an externally applied voltage, the P-N junction of a diode will be at thermal equilibrium and the Fermi levels of the P layer and N layer will be equal (Fig. 1 (a). In this case, the height of the poten
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Untitled
Abstract: No abstract text available
Text: CA424 DC-DC CONVERTER > Low power The CA424 is a low power, high efficiency dc - d c Converter. It can operate from single battery cell voltages as low as 0.9 volts. Only five external components are required. The I.C. consists of a temperature compensated voltage
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CA424
CA424
-jj40x10
L-267jiH
Fclock-25KH
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