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    PHOTO INTERRUPTER DARLINGTON SENSOR Search Results

    PHOTO INTERRUPTER DARLINGTON SENSOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MRMS591P Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd
    MRMS581P Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd
    MRUS74SD-001 Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd
    MRMS791B Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd
    MRUS74SK-001 Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd

    PHOTO INTERRUPTER DARLINGTON SENSOR Datasheets Context Search

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    optical interrupter darlington

    Abstract: ISTS300 ISTS400
    Text: ISTS300 ISTS400 1mm APERTURE OPTO-ELECTRONIC SINGLE CHANNEL SLOTTED INTERRUPTER SWITCHES WITH DARLINGTON SENSORS 1 25.7 24.1 19.05 E 2 12.7 1 2 6.6 3 6.6 3.3 3.0 2.8 11.1 10.5 3.3 3.0 OPTICAL CENTRE LINE 0.45 0.40 7.62 2.8 9.0 8.0 11.1 10.5 OPTICAL CENTRE


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    PDF ISTS300 ISTS400 ISTS300, ISTS400 100pps DB92184-AAS/A2 optical interrupter darlington ISTS300

    optical interrupter darlington

    Abstract: photo interrupter darlington sensor photo darlington sensor H21B1 H21B3 H22B1 photointerrupters H21B2 H21B4 H21B5
    Text: H21B1, H21B2, H21B3, H21B4, H21B5, H21B6 H22B1, H22B2, H22B3, H22B4, H22B5, H22B6 1mm APERTURE OPTO-ELECTRONIC SINGLE CHANNEL SLOTTED INTERRUPTER SWITCHES WITH DARLINGTON SENSORS 1 25.7 24.1 19.05 E 2 12.7 Dimensions in mm 3.3 DIA 2 PLCS 4 1 2 6.6 3 11.1 10.5


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    PDF H21B1, H21B2, H21B3, H21B4, H21B5, H21B6 H22B1, H22B2, H22B3, H22B4, optical interrupter darlington photo interrupter darlington sensor photo darlington sensor H21B1 H21B3 H22B1 photointerrupters H21B2 H21B4 H21B5

    Untitled

    Abstract: No abstract text available
    Text: Sensors Sensors Sensors FEmitters 1 Infrared LEDs (1) Principle In the absence of an externally applied voltage, the P-N junction of a diode will be at thermal equilibrium and the Fermi levels of the P layer and N layer will be equal (Fig. 1 (a). In this case, the height of the potential barrier will


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    MOC3040 equivalent

    Abstract: MOC3043 equivalent H21A1 PINS MOC3031 equivalent MOC3040 and applications H22B1 equivalent ISP817 IS606 moc3040 ISP521-1
    Text: PHOTO TRANSISTOR General Purpose 4 and 6 Pin Packages; 6 Pin DIP - Safety Approvals: UL, CSA, VDE 0884, BSI, NEMKO, DEMKO, SEMKO, and FIMKO *Note 1 Part Number Features H24A1 Current Transfer Ratio IF = 10mA Min % Isolation Test Voltage (KV) Continuous Forward


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    PDF H24A1 H24A2 H24A3 H24A4 H11A1 H11A2 H11A3 H11A4 H11A5 ISRX166012 MOC3040 equivalent MOC3043 equivalent H21A1 PINS MOC3031 equivalent MOC3040 and applications H22B1 equivalent ISP817 IS606 moc3040 ISP521-1

    photo interrupter module

    Abstract: wiring circuit stepper motor "Photo Interrupter" Application Note mosfet discrete totem pole CIRCUIT PCA9539 principle stepper motor unipolar stepper motor programming in c 7.5 stepper motor PCA9538 optical interrupter darlington
    Text: AN10814 Driving stepper motors using NXP I2C-bus GPIO expanders Rev. 01 — 11 September 2009 Application note Document information Info Content Keywords stepper, stepper motor, GPIO, push-pull, quasi-bidirectional, MOSFET, optical interrupter, Fast-mode Plus, Fm+, I2C-bus


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    PDF AN10814 20090information AN10814 photo interrupter module wiring circuit stepper motor "Photo Interrupter" Application Note mosfet discrete totem pole CIRCUIT PCA9539 principle stepper motor unipolar stepper motor programming in c 7.5 stepper motor PCA9538 optical interrupter darlington

    optical interrupter darlington

    Abstract: "Photo Interrupter" Application Note Photo interrupter application notes photo darlington sensor photo interrupter darlington sensor OPTICAL INTERRUPTER CNY29 2550T "Optical Switch" 272 optical interrupter speed sensor
    Text: PHOTODARLINGTON OPTICAL INTERRUPTER SWITCH CNY29 PACKAGE DIMENSIONS 0.972 24.7 0.957 (24.3) Ø 0.133 (3.4) Ø 0.126 (3.2) (2X) 0.472 (12.0) 0.457 (11.6) CL 0.249 (6.35) 0.243 (6.15) + D E + CL 0.39 (1.00) 0.34 (0.85) 0.755 (19.2) 0.745 (18.9) 0.129 (3.3)


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    PDF CNY29 DS300282 optical interrupter darlington "Photo Interrupter" Application Note Photo interrupter application notes photo darlington sensor photo interrupter darlington sensor OPTICAL INTERRUPTER CNY29 2550T "Optical Switch" 272 optical interrupter speed sensor

    photo darlington sensor

    Abstract: light sensitive trigger circuit Application TRansistor A 940 cmos light DETECTOR CIRCUIT DIAGRAM injection molding machine PHOTO GAP DETECTOR infrared emitters and detectors light detector Reflective photosensor "Infrared LED" 880 nm wavelength circuits
    Text: Sensors Sensors Sensors FEmitters 1 Infrared LEDs (1) Principle In the absence of an externally applied voltage, the P-N junction of a diode will be at thermal equilibrium and the Fermi levels of the P layer and N layer will be equal (Fig. 1 (a). In this case, the height of the potential barrier will


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    photo interrupter darlington sensor

    Abstract: toshiba 4b1 TPS607A tps607 04b1 "Photo Interrupter" 4b1 toshiba TLN107A AUTOMATIC CONTROL UNIT
    Text: TOSHIBA TPS607A TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS607A PHOTO DARLINGTON TRANSISTOR FOR PHOTO INTERRUPTER Unit in mm PHOTOELECTRIC COUNTER 4 POSITION DETECTION AUTOMATIC CONTROL UNIT +0 ö 4 .4 -0 .2 +0 3-0 .2 2.4 ± 0 . 3


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    PDF TPS607A TLN107A, TLN107A driven40mm TPS607A photo interrupter darlington sensor toshiba 4b1 tps607 04b1 "Photo Interrupter" 4b1 toshiba AUTOMATIC CONTROL UNIT

    TPS607A

    Abstract: photo interrupter darlington sensor
    Text: TOSHIBA TPS607A TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS607A PHOTO DARLINGTON TRANSISTOR FOR PHOTO INTERRUPTER PHOTOELECTRIC COUNTER POSITION DETECTION AUTOMATIC CONTROL UNIT • High sensitivity ; lL = 2mA TYP, • The same external shape as the infrared LED TLN107A, and is


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    PDF TPS607A TLN107A, TLN107A --40mm TPS607A 500//A photo interrupter darlington sensor

    TPS607A

    Abstract: No abstract text available
    Text: TO SHIBA TPS607A TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR T• P <; ■ MF fi n 7 » »a » PHOTO DARLINGTON TRANSISTOR FOR PHOTO INTERRUPTER U nit in mm 4 PHOTOELECTRIC COUNTER POSITION DETECTION -4r AUTOMATIC CONTROL UNIT +0 4.4 -0.2


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    PDF TPS607A TLN107A, TLN107A TPS607A

    toshiba 4b1

    Abstract: 4b1 toshiba photo interrupter darlington sensor TLN107A TPS617 TLN107
    Text: TO SHIBA TPS617 TPS617 TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR Unit in mm PHOTO DARINGTON TRANSISTOR FOR PHOTO INTERRUPTER PHOTOELECTRIC COUNTER POSITION DETECTION AUTOMATIC CONTROL UNIT Visible light cut type black package High sensitivity : I l = 1.4mA (TYP.)


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    PDF TPS617 TLN107A, TLN107A driven40mm TPS617 toshiba 4b1 4b1 toshiba photo interrupter darlington sensor TLN107

    photo interrupter darlington sensor

    Abstract: No abstract text available
    Text: T O SH IB A TPS617 TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS61 7 PHOTO DARINGTON TRANSISTOR FOR PHOTO INTERRUPTER PHOTOELECTRIC COUNTER POSITION DETECTION AUTOMATIC CONTROL UNIT • Visible light cut type black package • High sensitivity : I l = 1.4mA (TYP.)


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    PDF TPS617 TPS61 TLN107A, TLN107A --40mm TPS617 photo interrupter darlington sensor

    Untitled

    Abstract: No abstract text available
    Text: NPN Photo Darlington TPS607A 4 A p p lic a tio n s - ^ 7 - • Photo Interrupter • Photoelectric Counter • Position Detection • Automatic Control Unit Featu res • High Sensitivity: IL = 2mA (Typ.) • Spectrally and Mechanically Compatible with the


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    PDF TPS607A TLN107A TPS607A 500pA 98-4LEDS 0001L4S

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPS617 TOSHIBA PHOTO DARLINGTON TRANSISTOR SILICON NPN EPITAXIAL PLANAR T• P■ <MF; f i i■ 7* PHOTO DAR IN G TO N TRANSISTOR FOR PHOTO INTERRUPTER U n i t in m m PHOTOELECTRIC COUNTER POSITION DETECTION A U T O M A T IC CONTROL UNIT • Visible light cut type black package


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    PDF TPS617 TLN107A, TLN107A driven40mm TPS617

    cd photo detector

    Abstract: No abstract text available
    Text: Sensors Sensors Sensors •Em itters 1 Infrared LEDs 1) Principle In the absence of an externally applied voltage, the P-N junction of a diode will be at thermal equilibrium and the Fermi levels of the P layer and N layer will be equal (Fig. 1 (a). In this case, the height of the poten­


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    Untitled

    Abstract: No abstract text available
    Text: PHOTO DARLINGTON MARKTECH INTERNATIONAL 1ÖE D • ST'ì'ibSS D Q G D 4 1 4 7 ■ MTD6170 SILICON NPN EPITAXIAL PLANAR SILICON PHOTO DARLINGTON FOR PHOTO SENSOR C 421 H — J rr -4! B C 1 L APPLICATIONS K \ ! — E — • OPTICAL SWITCH L M 2 t J - D


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    PDF MTD6170 MTE1070A.

    all type transistor equivalent

    Abstract: pin details of photo transistor block diagram circuit diagram for photointerrupter IR block photodiode phototransistor HV photodiode chip silicon Infrared Phototransistor pn junction diode structure high sensitivity reflective photo interrupter ir led PHOTODIODE
    Text: Introduction Detecting devices Photodiode When light is incident on a silicon PN junction, the light generates electron and hole pairs in the silicon crystal. When the energy of the incident light is greater than the silicon energy band gap Eg , the electrons and holes scatter in accordance with the concentration gradient of the


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    photo interrupter darlington sensor

    Abstract: optical interrupter darlington GQG041S MTD6170 MTE1070A photo darlington sensor new ij8
    Text: PHOTO DARLINGTON MARKTECH INTERNATIONAL 1ÖE D • 57^55 DGGOM14 7 ■ MTD6170 SILICON NPN EPITAXIAL PLANAR SILICON PHOTO DARLINGTON FOR PHOTO SENSOR APPLICATIONS • O P T IC A L SW IT C H • IN T E R R U P T E R 1. EMITTER 2. COLLECTOR • TAPE, C A R D R E A D E R S


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    PDF DGGOM14 MTD6170 MTE1070A. GQG041S I070A photo interrupter darlington sensor optical interrupter darlington MTD6170 MTE1070A photo darlington sensor new ij8

    DARLINGTON phototransistor 14

    Abstract: phototransistor 3 pin LED phototransistor IC PACKAGE VISIBLE LIGHT PHOTOdarlington TRANSISTOR IR LED infrared led OPTICAL INTERRUPTER reflective object sensors
    Text: EO OPTOELECTRONICS TABLE OF CONTENTS Description VISIBLE PRODUCTS How To Use This Catalog Part Num ber Index OPTOCOUPLERS How To Use The V isible Products Section 55 V isib le Products Specification Definitions 56 3 mm T-1 and T-100 LED Lam ps 57 How To Use The O ptocoupler Section


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    PDF T-13/4 DARLINGTON phototransistor 14 phototransistor 3 pin LED phototransistor IC PACKAGE VISIBLE LIGHT PHOTOdarlington TRANSISTOR IR LED infrared led OPTICAL INTERRUPTER reflective object sensors

    Untitled

    Abstract: No abstract text available
    Text: INFRARED + PHOTO DARLINGTON TRANSISTOR TLP850 TLP850 TIMING DETECTION OF AUTOMATIC CONTROLLER AND COPYING MACHINE. EDGE SENSOR U n it in m m a «te TLP850 is a photo in te rru p te r w ith a wide detecting gap and high cu rren t tran sfer ratio (Ic / I p ) .


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    PDF TLP850 TLP850) TLP850 TLPS501 Ta-25Â

    photo darlington sensor

    Abstract: No abstract text available
    Text: N E C E L ECTRONICS INC S'ìC D • PHOTO INTERRUPTER — 6 4 27525 N E C ELECTRONICS - TYPE NO. b4E7S5S 00DS4S7 2 ■ INC_ 59C 05457 ABSOLUTE MAXIMUM RATINGS T a=25 ’C lF(mA) VCEO(V) IC(mA) i ! V F (V) T o p tfC ) P S4001 General purpose


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    PDF 00DS4S7 S4001 PS4003 S4005 photo darlington sensor

    photosensors

    Abstract: AN501 stanley CN501 DN401 DN106 CN306 CN504 CN505 CN305 DN106 stanley
    Text: EU LTR A HIGH POWER INFRARED LED T-m-H SSE D I I STANLEY CO INC 4b7filSa 0G00L.2Ô 7 Stanley infrared LEDs, including the super-intensity, high-speed DN Series, are available in four wavelengths 850,880, 925, 950nm as well as in a wide variety of package types.


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    PDF 0G00L 950nm) 950nm BNt925nm 850nm 800nm photosensors AN501 stanley CN501 DN401 DN106 CN306 CN504 CN505 CN305 DN106 stanley

    LASCR

    Abstract: No abstract text available
    Text: OPTOELECTRONICS THEORY OPTOELECTRONIC DEVICES T h is sectio n d e sc rib e s th e basic se m ic o n d u c to r devices utilized in o p to ele ctro n ic s, th e ir p rin c ip le s o f o p e ra tio n a n d th e ir circuit fu n c tio n s in o rd e r to give th e circuit d e sig n e r a n


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    pnp phototransistor

    Abstract: LASCR zero voltage switching of a tungsten lam
    Text: OPTOELECTRONICS THEORY OPTOELECTRONIC DEVICES T h is sectio n d e scrib es th e basic se m ic o n d u cto r devices utilized in o p to electro n ics, th e ir p rin c ip le s o f o p e ra tio n a n d th e ir circuit fu n c tio n s in o rd e r to give th e circuit d e sig n e r an


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