P781
Abstract: P7816 DATASHEET OF IC 741 photo diode photoreflector KPCA0007EA KPCB0016EB KPCB0018EA KPCB0019EA KPCB0020EA
Text: PHOTOREFLECTOR Photoreflector P7816 Thin package, photo IC diode output type photoreflector P7816 is a photoreflector using a photo IC diode on the output. The photo IC diode consists of a photodiode integrated with a current amplifier, and linearly amplifies and outputs the photocurrent generated in the photodiode. The two lead, current output allows operation just the same as
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P7816
P7816
SE-171
KPC1005E01
P781
DATASHEET OF IC 741
photo diode
photoreflector
KPCA0007EA
KPCB0016EB
KPCB0018EA
KPCB0019EA
KPCB0020EA
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PH525
Abstract: NEC Infrared application note tracking
Text: DATA SHEET PHOTO IC PH525F PHOTO DIODE INTERNAL I/V AMPLIFIER DETECTOR FOR CD DESCRIPTION The PH525F is 6 elements photo diode built in I/V amplifiers for CD. It is easy to adjust the center of beam spot by using the Focus and Tracking input terminal, and possible to obtain high speed and high sensitivity.
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PH525F
PH525F
PH525
NEC Infrared application note
tracking
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NDL5422P
Abstract: VMA23
Text: φ50 µm InGaAs PIN PHOTO DIODE BUTTERFLY MODULE WITH INTERNAL PRE-AMPLIFIER FOR 2.5 Gb/s NDL5422P FEATURES DESCRIPTION • INTERNAL Si PRE-AMPLIFIER IC The NDL5422P is an InGaAs PIN photo diode 6 pin butterfly package module incorporating silicon pre-amplifier IC. It is
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NDL5422P
NDL5422P
GI-50/125
24-Hour
VMA23
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Untitled
Abstract: No abstract text available
Text: OD9604N Photo Diode Preamp Module 2.488 Gbps InGaAs Technology + 3.3 V INTRODUCTION Oki Semiconductor’s OD9604N PD Preamp Module is a surface-mount 1.3-µm, InGaAs PIN photo diode combined with a transimpedance amplifier. This OD9604N is designed to operate at 2.488 Gbps in
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OD9604N
STM16/OC48
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Untitled
Abstract: No abstract text available
Text: OD9601N Photo Diode Preamp Module 1.25-Gbps InGaAs Technology + 3.3 V INTRODUCTION Oki Semiconductor’s OD9601N PD Preamp Module is a surface-mount 1.3-µm, InGaAs PIN photo diode combined with a transimpedance amplifier. This OD9601N is designed to operate at 1.25 Gbps in
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OD9601N
25-Gbps
STM4/OC12/OC24
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650-nm
Abstract: PH533
Text: DATA SHEET PHOTO IC PH533 HIGH SPEED, HIGH SENSITIVITY PHOTO DIODE INTERNAL I/V AMPLIFIER DETECTOR FOR DVD DESCRIPTION The PH533 is a 6-element photo diode built in I/V amplifiers for DVD. It is easy to adjust the center of beam spot by using the Focus and Tracking input terminal, and possible to obtain high speed and high sensitivity.
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PH533
PH533
650-nm
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Untitled
Abstract: No abstract text available
Text: OD9602N Photo Diode Preamp Module 622 Mbps InGaAs Technology + 3.3 V introduction Oki Semiconductor’s OD9602N PD Preamp Module is a surface-mount 1.3-µm, InGaAs PIN photo diode combined with a transimpedance amplifier. This OD9602N is designed to operate at 622 Mbps in
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OD9602N
STM4/OC12
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TDA8808
Abstract: TDA8808AT TDA8808T TDA8808T/C3
Text: INTEGRATED CIRCUITS DATA SHEET TDA8808T TDA8808AT Photo diode signal processor for compact disc players Product specification File under Integrated Circuits, IC01 November 1987 Philips Semiconductors Product specification Photo diode signal processor for compact disc players
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TDA8808T
TDA8808AT
TDA8808
TDA8808AT
TDA8808T
TDA8808T/C3
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PDF PIN PHOTO DIODE DESCRIPTION
Abstract: tda8808 TDA8808AT TDA8808T GCLF PHOTO diode
Text: INTEGRATED CIRCUITS DATA SHEET TDA8808T TDA8808AT Photo diode signal processor for compact disc players Product specification File under Integrated Circuits, IC01 November 1987 Philips Semiconductors Product specification Photo diode signal processor for compact disc players
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TDA8808T
TDA8808AT
TDA8808
PDF PIN PHOTO DIODE DESCRIPTION
TDA8808AT
TDA8808T
GCLF
PHOTO diode
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TPS808
Abstract: TLN107A
Text: TOSHIBA TPS808 TOSHIBA PHOTO IC SILICON EPITAXIAL PLANAR PHOTO IC FOR PHOTO INTERRUPTER TPS808 PHOTOELECTRIC COUNTER POSITION AND ROTATIONAL SPEED SENSOR Unit in mm 4 J h ^TJ +o +0 4.4 - 0.2 TPS808 is a photo IC integrating photo diode, amplifier circuit
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TPS808
TPS808
900mm
TLN107A,
TLN107A
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TLN107A
Abstract: TPS806 photo diode amplifier TLN107
Text: TOSHIBA TPS806 TOSHIBA PHOTO IC SILICON EPITAXIAL PLANAR PHOTO IC FOR PHOTO INTERRUPTER TPS806 Unit in mm PHOTOELECTRIC COUNTER +0 POSITION AND ROTATIONAL SPEED SENSOR TPS806 is a photo IC integrating photo diode, amplifier circuit and waveform shaping circuit in 1 chip.
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TPS806
TPS806
900mm
TLN107A,
TLN107A
photo diode amplifier
TLN107
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TPS805
Abstract: TLN107A
Text: TOSHIBA TPS805 TOSHIBA PHOTO IC SILICON EPITAXIAL PLANAR PHOTO IC FOR PHOTO INTERRUPTER TPS805 Unit in mm 4 PHOTOELECTRIC COUNTER POSITION AND ROTATIONAL SPEED SENSOR +0 TPS805 is a photo IC integrating photo diode, amplifier circuit and waveform shaping circuit in 1 chip.
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TPS805
TPS805
900nm
TLN107A,
TLN107A
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p12359ej2v0ds00
Abstract: PH561
Text: PRELIMINARY DATA SHEET NEC PHOTO 1C PH561 HIGH SPEED, HIGH SENSITIVITY PHOTO DIODE INTERNAL l/V AMPLIFIER DETECTOR FOR DVD, DVD-ROM, DVD-RAM DESCRIPTION The PH561 is 8 elements photo diode built in l/V amplifiers for DVD, DVD-ROM, DVD-RAM. It is easy to adjust the
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PH561
PH561
p12359ej2v0ds00
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPS805 TOSHIBA PHOTO IC PHOTO IC FOR PHOTO INTERRUPTER SILICON EPITAXIAL PLANAR TPS80 5 Unit in mm 4 PHOTOELECTRIC COUNTER LhJ POSITION AND ROTATIONAL SPEED SENSOR +o +o 4 .4 -0 .2 • TPS805 is a photo IC integrating photo diode, amplifier circuit
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TPS805
TPS80
TPS805
900nm
TLN107A,
TLN107A
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TPS808 TOSHIBA PHOTO IC SILICON EPITAXIAL PLANAR PHOTO IC FOR PHOTO INTERRUPTER TPS808 Unit in mm PHOTOELECTRIC COUNTER POSITION AND ROTATIONAL SPEED SENSOR • TPS808 is a photo IC integrating photo diode, amplifier circuit and waveform shaping circuit in 1 chip.
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TPS808
TPS808
900mm
TLN107A,
TLN107A
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TPS806 TOSHIBA PHOTO IC SILICON EPITAXIAL PLANAR PHOTO IC FOR PHOTO INTERRUPTER TPS806 U nit in mm PHOTOELECTRIC COUNTER POSITION AND ROTATIONAL SPEED SENSOR 4 ,4 -1-0 - 0.2 +0 2.4 ± 0.3 TPS806 is a photo IC integrating photo diode, amplifier circuit
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TPS806
TPS806
900mm
TLN107A,
TLN107A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPS806 TOSHIBA PHOTO IC • ■ SILICON EPITAXIAL PLANAR MF PHOTO IC FOR PHOTO INTERRUPTER U nit in mm PHOTOELECTRIC COUNTER p 47 +0 POSITION AND ROTATIONAL SPEED SENSOR 4 .4 -0 .2 +0 2.4 ±0.3 • TPS806 is a photo IC integrating photo diode, amplifier circuit
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TPS806
900mm
TLN107A,
TLN107A
TPS806
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPS807 TOSHIBA PHOTO IC SILICON EPITAXIAL PLANAR T• P■ <MF; R f l 7m PHOTO IC FOR PHOTO INTERRUPTER Unit in mm 4 PHOTOELECTRIC COUNTER POSITION AND ROTATIONAL SPEED SENSOR +0 4.4 - 0 .2 • TPS807 is a photo IC integrating photo diode, amplifier circuit
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TPS807
TLN107A,
TLN107A
900nm
TPS807
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PDF
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TPS807
Abstract: No abstract text available
Text: T O SH IB A TPS807 TO SH IBA PHOTO IC SILICON EPITAXIAL PLANAR TPS807 PHOTO IC FOR PHOTO INTERRUPTER U n it in mm PHOTOELECTRIC COUNTER POSITION AND ROTATIONAL SPEED SENSOR • TPS807 is a photo IC integrating photo diode, amplifier circuit and waveform shaping circuit in 1 chip.
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TPS807
TPS807
900nm
TLN107A,
TLN107A
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TPS805
Abstract: No abstract text available
Text: T O SH IB A TPS805 TOSHIBA PHOTO IC SILICON EPITAXIAL PLANAR PHOTO IC FOR PHOTO INTERRUPTER TPS805 Unit in mm PHOTOELECTRIC COUNTER POSITION AND ROTATIONAL SPEED SENSOR • • • • • TPS805 is a photo IC integrating photo diode, amplifier circuit and waveform shaping circuit in 1 chip.
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TPS805
TPS805
900nm
TLN107A,
TLN107A
Dis85
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LED pigtailed
Abstract: Diode PH 13M
Text: M itsubishi O ptical D e vice C la ssifica tio n Item LD modules Wave length •1.3jum/1.55j«m Laser diode •0.98um/1.48Mm for pump Laser diode •InGaAs-PIN Photo diode •InGaAs-APO Photo diode •active diameter ¿20/* m ~«4300^m Device Package •TO CAN, Chip-on-Carrier
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STM-4/OC-12,
LED pigtailed
Diode PH 13M
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nec 2502 4 pin
Abstract: UPD75308 T-41-67 PD6120 PH503 photo amplifier application circuit c1339g 1339g Micro Servo
Text: N E C 30E D ELECTRONICS INC b4S7525 G0 a i b 3 1 2 • PHOTO DIODE PH 503 PIN PHOTO DIODE BUILT IN l-V AMPLIFIER DETECTOR FOR CD, OPTICAL DISC MEMORY P A C K A G E D IM E N S IO N S U nit : mm 6.9 ±0.2 P H 503 is 6 elements P IN Photo Diode built in l-V A m p li
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b4S7525
PH503
1339G
PD6353G
PH503
UPD6355G
UPD6353G
SE303A-C
PH302C,
PH310
nec 2502 4 pin
UPD75308
T-41-67
PD6120
photo amplifier application circuit
c1339g
1339g
Micro Servo
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660nm 3w
Abstract: No abstract text available
Text: TOSHIBA TPS825 TOSHIBA PHOTO IC SILICON EPITAXIAL PLANAR TPS825 PHOTO 1C FOR PLASTIC FIBER / POLYMER CLAD FIBER U nit in mm TPS825 contains a light receiving IC integrating photo diode, amplifier circuit, waveform shaping circuit, etc. in 1 chip. B.0.5 ~
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TPS825
TPS825
660nm 3w
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Untitled
Abstract: No abstract text available
Text: Optoisolator Specifications H11B255 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier The H ] IB255 consists o f a gallium arsenide infrared em itting diode coupled with a silicon photo-Darlington amplifier in a dual in-line package. This device is also
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H11B255
IB255
60apacitance
100STÌ
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