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    PHOENIX MICROWAVE Search Results

    PHOENIX MICROWAVE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    ADL6010ACPZN-R7 Analog Devices Microwave Detector Visit Analog Devices Buy
    ADL6010ACPZN-R2 Analog Devices Microwave Detector Visit Analog Devices Buy
    ADL5721ACPZN-R7 Analog Devices Microwave HIR Visit Analog Devices Buy
    ADL6010SCPZN-R2 Analog Devices Microwave Detector Visit Analog Devices Buy
    ADL5723ACPZN-R7 Analog Devices Microwave HIR Visit Analog Devices Buy
    ADL6010ACPZN Analog Devices Microwave Detector Visit Analog Devices Buy

    PHOENIX MICROWAVE Datasheets Context Search

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    SIT Static Induction Transistor

    Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
    Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are


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    PDF AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier

    TRW62601

    Abstract: BALLAST MOTOROLA TP62601 motorola rf Power Transistor 328A-03 Motorola 305 RF TRANSISTOR 1 WATT
    Text: MOTOROLA Order this document by TP62601/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Oscillator Transistor TP62601 . . . designed for use as power oscillators at frequencies to 3.0 GHz with typical output power of over 1.0 watt. • Operation to 3.0 GHz


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    PDF TP62601/D TP62601 TRW62601 TP62601/D* TRW62601 BALLAST MOTOROLA TP62601 motorola rf Power Transistor 328A-03 Motorola 305 RF TRANSISTOR 1 WATT

    6 watts resistor

    Abstract: MRF16006 motorola rf Power Transistor
    Text: MOTOROLA Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz


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    PDF MRF16006/D MRF16006 MRF16006/D* 6 watts resistor MRF16006 motorola rf Power Transistor

    MRF10005

    Abstract: motorola rf Power Transistor
    Text: MOTOROLA Order this document by MRF10005/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Transistor MRF10005 . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high


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    PDF MRF10005/D MRF10005 MRF10005/D* MRF10005 motorola rf Power Transistor

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz


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    PDF MRF16030/D MRF16030 MRF16030/D*

    transistor 955 MOTOROLA

    Abstract: MRF16006
    Text: MOTOROLA Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR


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    PDF MRF16006/D MRF16006 MRF16006 MRF16006/D* MRF16006/D transistor 955 MOTOROLA

    Motorola Microwave power Transistor

    Abstract: MRF16006 Transistor MRF16006
    Text: MOTOROLA Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz


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    PDF MRF16006/D MRF16006 MRF16006/D* Motorola Microwave power Transistor MRF16006 Transistor MRF16006

    motorola rf Power Transistor

    Abstract: Motorola Microwave power Transistor MRF10005 J189 j112 motorola
    Text: MOTOROLA Order this document by MRF10005/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Transistor MRF10005 . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high


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    PDF MRF10005/D MRF10005 MRF10005/D* motorola rf Power Transistor Motorola Microwave power Transistor MRF10005 J189 j112 motorola

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF1090MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1090MA Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc


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    PDF MRF1090MA/D MRF1090MA MRF1090MA/D*

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRW2001/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Transistors MRW2001 MRW2005 Designed primarily for large–signal output and driver amplifier stages in the 1.0 to 2.3 GHz frequency range. • Designed for Class B or C, Common Base Power Amplifiers


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    PDF MRW2001/D MRW2001 MRW2005 MRW2001 MRW2001/D*

    Motorola transistors MRF3104

    Abstract: MRF3104 MRF3105 MRF3106
    Text: MOTOROLA The RF Line MRF3104 MRF3105 MRF3106 Microwave Linear Power Transistors • Designed for Class A, Common Emitter Linear Power Amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics: MRF3104 MRF3105 MRF3106 0.5 W 10.5 dB 0.8 W 9 dB 1.6 W 8 dB Output Power


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    PDF MRF3104 MRF3105 MRF3106 MRF3104 MRF3105 MRF3104/D Motorola transistors MRF3104 MRF3106

    MRF1004MA

    Abstract: TACAN TACAN 41 J295
    Text: MOTOROLA Order this document by MRF1004MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1004MA Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.


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    PDF MRF1004MA/D MRF1004MA MRF1004MA/D* MRF1004MA TACAN TACAN 41 J295

    MRF10120

    Abstract: motorola rf Power Transistor MOTOROLA 381 equivalent transistor j222 J280
    Text: MOTOROLA Order this document by MRF10120/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Long Pulse Power Transistor MRF10120 Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc


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    PDF MRF10120/D MRF10120 MRF10120/D* MRF10120 motorola rf Power Transistor MOTOROLA 381 equivalent transistor j222 J280

    transistor j222

    Abstract: MOTOROLA 381 equivalent motorola transistor 307 MRF10120 motorola rf Power Transistor
    Text: MOTOROLA Order this document by MRF10120/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Long Pulse Power Transistor MRF10120 Designed for 960 – 1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc


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    PDF MRF10120/D MRF10120 MRF10120/D* transistor j222 MOTOROLA 381 equivalent motorola transistor 307 MRF10120 motorola rf Power Transistor

    Untitled

    Abstract: No abstract text available
    Text: PHOENIX WIRELESS SHORT FORM PRODUCTS CHART AMPLIFIERS Phoenix L ow H igh M in. T yp. M ax. Typ. M in. Typ. Typ. Typ. N om . Typ. M odel Freq. F req. G ain G ain NF Pout P out IP3 Isol. V olt C urrent C ase P age (MHz.) (MHz.) (dB.) (dB.) (dB.) (dB.) (dBm.) (dBm.) (dBm.) (dB.)


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    PDF PA1117 PA1116 PA1118 PA1043C PA1081 PA1044C PS743 2400MHz. 2200MII:

    H R C M F 2J

    Abstract: No abstract text available
    Text: INTEG RATED ASSEM BLIES Phoenix Microwave Corporation has been supplying high volume integrated assemblies to both the commercial and military m arket place for several years. These assemblies integrate varied functional blocks in one convenient package to


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    Untitled

    Abstract: No abstract text available
    Text: LPA Telecommunication Application Note INTRODUCTION. The Phoenix Microwave LPA Linear Amplifier Modules provide ultra-linear performance at economical prices. These modules cover the popular 800 to 960 MHz and 1800 to 2000 MHz frequency ranges. New types


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    PDF PA1062 30dBm. 60dBm. 40dBm.

    Untitled

    Abstract: No abstract text available
    Text: Quality Assurance & Reliability Since its inception, Phoenix Microwave Corp. has been dedicated to provide high quality spec-compliant components to our valued customers. Quality and reliability are first and foremost throughout all levels of the organization and are


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    PDF 107/B 1Q08/B 105/C 1010/B, 213/C 2001/A, 204/D 214/Table 205/D 1014/A

    724 motorola NPN Transistor

    Abstract: motorola transistor r 724 MRF2010M motorola rf Power Transistor transistor amplifier 3 ghz 10 watts MRF201 MOTOROLA POWER TRANSISTOR 14 DS5802 Motorola 406 MRF2010
    Text: Order this document by MRF2010M/D M MOTOROLA MRF2010M SEMICONDUCTORS P.O. BOX 20912 • PHOENIX, ARIZONA 85036 The RF Line 10W M ICRO W AVE POWER TRANSISTO R NPN SILICON MICROWAVE POWER TRANSISTOR . . . designed for Class B and C comm on base broadband amplifier


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    PDF MRF2010M/D MRF2010M MRF2010M/D 724 motorola NPN Transistor motorola transistor r 724 MRF2010M motorola rf Power Transistor transistor amplifier 3 ghz 10 watts MRF201 MOTOROLA POWER TRANSISTOR 14 DS5802 Motorola 406 MRF2010

    PA-1023

    Abstract: No abstract text available
    Text: CATV & WIRELESS PRODUCTS CELLULAR K M CPS VSAT CAT'/ V/LAM ISM ULTRA LINEAR HIGH INTERCEPT AMPLIFIERS Phoenix Microwave Corp. has in­ troduced new products for the de­ manding specifications required by the communications market place. In­ cluded in this brochure are ultra-linear


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    PDF PS656 PS723 2000M 3000M 1100M 2500M 1100MHz. PA-1023

    PS619

    Abstract: PS678
    Text: ATTENUATORS Phoenix Microwave’s extensive thick film processing technology coupled with state-of-the art designs, has resulted in a unique line of TTL-controlled digital attenuators covering a wide range of RF and Microwave frequencies. Exceptional step accuracy and guaranteed monotomic behavior are the main features of these


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    PDF PS681* PS619 PS678

    Untitled

    Abstract: No abstract text available
    Text: C om pany back g ro und Phoenix Microwave Corp. was founded by a team of engineers and businessmen with long and extensive experience in the com­ mercial and military microwave component industry. It is a pri­ vately owned small business concern housed in a 25,000 sq. ft.


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    WILTRON

    Abstract: No abstract text available
    Text: E pffeDiaCS*SALES REPRESENTATIVES U.S. & CANADIAN Alabama, Georgia, Mississippi, S. Carolina Arizona California Northern California (Southern) Youngewirth & Olenick 4855 E. Warner Road Suite 24-138 Phoenix, AZ 85044 Tel: (800) 515-1554 Fax: (800) 515-1574


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    PA988

    Abstract: PA381 PA195 PA1032 PS605 phoenix pa880 PS665 PS668
    Text: PH O ENIX MICROWAVE ALPHANUMERIC P/N LISTING Phoenix C atalog P/N Page # PA002 PA005 PA010 PA015 PA030 PA050 PA055 PA056 PAIO PAI 00 PAI 10 PAI 12 PAI 20 PAI 50 PAI 62 PAI 70 PAI 77 PAI 79 PAI 80 PAI 81 PA190 PA191 PA195 PAI 96 PAI 97 PA198 PA209 PA211 PA219


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    PDF PA002 PA005 PA010 PA015 PA030 PA050 PA055 PA056 PA190 PA191 PA988 PA381 PA195 PA1032 PS605 phoenix pa880 PS665 PS668