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    PHILIPS HIGH FREQUENCY BIPOLAR TRANSISTOR WITH FT Search Results

    PHILIPS HIGH FREQUENCY BIPOLAR TRANSISTOR WITH FT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    PHILIPS HIGH FREQUENCY BIPOLAR TRANSISTOR WITH FT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Philips high frequency bipolar transistor with Ft

    Abstract: equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original     		PDF MGM011 BLV861 BLV2045 Philips high frequency bipolar transistor with Ft equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout

    NTC 220-11

    Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original     		PDF transisto25-735. NTC 220-11 PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide

    1000w inverter PURE SINE WAVE schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW
    Text: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design


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    RF Power transistor

    Abstract: TV power transistor datasheet MSC638 BLV59 MBK442 MSC643 POWER transistor rf power transistors MDA505 TRANSISTOR 2132
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 2 RF power transistors characteristics RF POWER TRANSISTOR CHARACTERISTICS 2.1 This section describes how to interpret and use the data published by Philips Semiconductors on its transmitting


    Original     		PDF BLV59, BLV59 RF Power transistor TV power transistor datasheet MSC638 BLV59 MBK442 MSC643 POWER transistor rf power transistors MDA505 TRANSISTOR 2132

    "CHAPTER 1 Introduction to Power Semiconductors"

    Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor
    Text: Introduction Power Semiconductor Applications Philips Semiconductors CHAPTER 1 Introduction to Power Semiconductors 1.1 General 1.2 Power MOSFETS 1.3 High Voltage Bipolar Transistors 1 Introduction Power Semiconductor Applications Philips Semiconductors General


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    BFQ67W

    Abstract: PMBT3640 PMBTH10 BFM520
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Wideband Transistors 1997 Nov 24 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE


    Original     		PDF OT143 OT223 OT323 BFT25 BF747 BF547 BF547W BFS17 BFS17W BF689K BFQ67W PMBT3640 PMBTH10 BFM520

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


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    BGF425W

    Abstract: BFG425W BFG400W BFC425W RT4000 BLV2046 HP 2531 AN98024 BGY1816 BGY1916
    Text: APPLICATION NOTE 50 W base station power amplifier for DCS1800 and PCS1900 AN98024 Philips Semiconductors 50 W base station power amplifier for DCS1800 and PCS1900 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 PRE-DRIVER BFG425W 4 DRIVER (BGY1816/BGY1916) 5 FINAL STAGE (BLV2046)


    Original     		PDF DCS1800 PCS1900 AN98024 BFG425W) BGY1816/BGY1916) BLV2046) BGF425W BFG425W BFG400W BFC425W RT4000 BLV2046 HP 2531 AN98024 BGY1816 BGY1916

    2SK163 spice model

    Abstract: BF256B spice model bf245b spice model TRANSISTOR SMD wb BGY88 spice model bf1202 Microwave GaAs FET catalogue 2sk163 BSS83 spice model BAW 62 SOT23
    Text: RF Manual 7 edition th Application and design manual for RF products November 2005 date of release: November 2005 document order number: 9397 750 15371 Henk Roelofs,Vice President & General Manager RF Products Introduction Welcome to the 7th edition of our RF Manual. We knew that the new focus of applicationbased information with fully interactive operation would pay off, but the appreciation expressed


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    AN243

    Abstract: DM5101 AN240 ALVT16245 Philips high frequency bipolar transistor with Ft ALVT 74lvt244 Philips schottky transistor spice
    Text: INTEGRATED CIRCUITS AN243 LVT Low Voltage Technology and ALVT (Advanced LVT) Author: Tinus van de Wouw Philips Semiconductors January 1998 Philips Semiconductors Application note LVT (Low Voltage Technology) and ALVT (Advanced LVT) AN243 Author: Tinus van de Wouw, Philips Semiconductors, Nijmegen


    Original     		PDF AN243 DM5101/200/FP/pp10 AN243 DM5101 AN240 ALVT16245 Philips high frequency bipolar transistor with Ft ALVT 74lvt244 Philips schottky transistor spice

    Audio Power Amplifier MOSFET TOSHIBA

    Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows


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    2F1 SMD Transistor

    Abstract: 2F2 SMD Transistor w2 smd transistor TRANSISTOR SMD w2 schematic diagram induction heating BFG425W smd transistor w2 2 GHz LNA BFG425W APPLICATION BFG410W
    Text: Philips Semiconductors Application Note Ultra Low Noise Amplifiers for 900 and 2000 MHz with High IP3 by Korné Vennema Philips Semiconductors Slatersville, RI December 1996 #KV96-157 This application note describes four Low Noise Amplifier designs with the


    Original     		PDF KV96-157 BFG410W BFG425W, BFG410W BFG425W BFG425W. BFG400W 2F1 SMD Transistor 2F2 SMD Transistor w2 smd transistor TRANSISTOR SMD w2 schematic diagram induction heating BFG425W smd transistor w2 2 GHz LNA BFG425W APPLICATION

    Philips high frequency bipolar transistor with Ft

    Abstract: BFG424F low noise block down converter IF Amplifiers CFH703A DRO lnb mixer lnb SOT343F BGM1420 innovative dro
    Text: Satellite LNB One-stop shop for low-noise block down converter designs Helping simplify your supply chain, Philips Semiconductors meets all your hardware needs for low-noise block down converter LNB designs. Our high-quality components are finely tuned to work together seamlessly for the best


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: IN TE G R A TE D C lR C U fT S TD F5242T Brushless DC motor drive circuit Preliminary specification File under Integrated Circuits, IC11 Philips Semiconductors 1997 Apr 23 P H IL IP S PHILIPS P h ilip s S e m ic o n d u c t o r s P re lim in a ry s p e c if ic a t io n


    OCR Scan     		PDF F5242T TDF5242T SCA54

    mj power transistor

    Abstract: 251 3j lgbt BUK856-800A T0220AB
    Text: N AMER PHILIPS/DISCRETE bTE T> m bbS3131 0030117 251 • APX Product Specification Philips Semiconductors BUK856-800A Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated gate bipolar power transistor in a


    OCR Scan     		PDF BUK856-800A T0220AB mj power transistor 251 3j lgbt BUK856-800A

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC


    OCR Scan     		PDF BUK854-800A T0220AB

    transistor igbt

    Abstract: BUK854-800A IEC134 T0220AB igbt buk854
    Text: N AMER PHILIPS / D I S C R E T E bT E D • h b S B T a i □DBQ'iOG TSfl H A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a


    OCR Scan     		PDF BUK854-800A T0220AB transistor igbt BUK854-800A IEC134 T0220AB igbt buk854

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor tGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC


    OCR Scan     		PDF BUK854-800A T0220AB

    TRANSISTOR SUBSTITUTION 1993

    Abstract: volterra VOLTERRA VT c1e2 hp8566A BFR520 CT-20 ED-11 TRANSISTOR SUBSTITUTION BFR520 transistor
    Text: IEEE JOURNAL ON SOLID-STATE CIRCUITS, VOL. 31, NO. 1, JANUARY 1996 114 Advanced Modeling of Distortion Effects in Bipolar Transistors Using the Mextram Model Leo C. N. de Vreede, Henk G. de Graaff, Koen M outhaan, Student M em ber, IEEE, M arinus de Kok, Joseph L. Tauritz, M ember, IEEE, and Roel G. F. Baets, M ember, IE E E


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    transistor LC 945

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC


    OCR Scan     		PDF BUK856-800A T0220AB transistor LC 945

    Untitled

    Abstract: No abstract text available
    Text: Philips Sem icond uctors Linear Products P relim inary specification Stereo continuous calibration DAC TDA1545A FEATURES GENERAL DESCRIPTION • Space saving package S08 or DIL8 The TDA1545A is the first device of a new generation of the digital-to-analog convertors which embodies the


    OCR Scan     		PDF TDA1545A 16-bit

    transistor 20107

    Abstract: transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor bfg520 antenna preamplifier BP547 bfg135 application note MPSH10 small amplifier
    Text: TARGET SYSTEMS PRODUCTS Function Type Description Cellular N AMPS /{E> TACS IS-54/-136 TDMA IS—95 CDMA Cordless GSM DCS1800 PCS PDC RF Amplifiers { SA5200 CTO CT1 SS X X Wireless Data DECT PHS 802.11 CDPD X X Gain block-1 GHZ PAGERS RF Front End SA611 1 GHz low voli LNA and mixer


    OCR Scan     		PDF SA5200 SA611 SA2420 SA621 SA1620 SA1921 UAA2073 UAA2077AM UAA2077BM UAA2077CM transistor 20107 transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor bfg520 antenna preamplifier BP547 bfg135 application note MPSH10 small amplifier

    tl 494 convertor

    Abstract: TDA1545A
    Text: P h ilip s S e m ic o n d u c to r s L in e a r P ro d u c ts P r e lim in a r y s p e c ific a tio n Stereo continuous calibration DAC TDA1545A FEATURES GENERAL DESCRIPTION • Space saving package SOS or DIL8 The TDA1545A is the first device of a new generation of


    OCR Scan     		PDF 16-bit 71106Eb QD7C51S7 tl 494 convertor TDA1545A

    RF Transistor s-parameter

    Abstract: bipolar transistor s-parameter lm 7803 s-parameter RF POWER TRANSISTOR NPN BJT with i-v characteristics transistor D 5032 bipolar transistor ghz s-parameter 60Ghz TRANSISTOR 30GHZ qubic4
    Text: IEEE BCTM 10.2 An S-parameter Technique for Substrate Resistance Characterization of RF Bipolar Transistors S.D. Harker*, R.J. Havenst , J.C.J. Paasschenst , D. Szmyd*, L.F. Tiemeijer*, and E.F. Weagel* ‘ Philips Semiconductors, 9201 Pan American Frwy. NE, Albuquerque, NM 87113, USA


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