TDA8589BJ
Abstract: TDA8588BJ TDA8588B TDA8589J TDA8588AJ TDA8588 tda8589b philips speakers tweeter 440 ac voltage regulator TDA8589AJ
Text: DATA SHEET TDA8589J; TDA8589xJ I2C-bus controlled 4 45 Watt power amplifier and multiple voltage regulator Product specication 2004 Feb 24 Philips Semiconductors Product specication I2C-bus controlled 4 45 Watt power amplier and multiple voltage regulator
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TDA8589J;
TDA8589xJ
SCA76
R32/01/pp55
TDA8589BJ
TDA8588BJ
TDA8588B
TDA8589J
TDA8588AJ
TDA8588
tda8589b
philips speakers tweeter
440 ac voltage regulator
TDA8589AJ
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BUK7518-30
Abstract: PHP55N03T
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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O220AB
PHP55N03T
BUK7518-30
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Untitled
Abstract: No abstract text available
Text: TDA8947J 4 通道音频放大器 Rev. 02 — 2005 年 6 月 16 日 产品数据表 1. 简介 TDA8947J 包含四个相同的音频功率放大器。 TDA8947J 可以用作：四个固定增益为 26 dB 的单端 SE 通道，固定增益为 32 dB 的桥接式负载 (BTL) 双通道，或 SE 双通道 （增
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TDA8947J
TDA8944AJ
TDA8946AJ
TDA8947J
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7518
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device
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OT404
BUK7618-30
7518
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BUK9518-30
Abstract: BUK9618-30
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.
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OT404
BUK9618-30
BUK9518-30
BUK9618-30
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology.
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PHB55N03LT
OT404
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7518
Abstract: BUK7518-30 PHB55N03T
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device
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OT404
PHB55N03T
7518
BUK7518-30
PHB55N03T
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BUK7518-30
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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O220AB
BUK7518-30
175on
BUK7518-30
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BUK9518-30
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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BUK9518-30
BUK9518-30
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BUK95180-100A
Abstract: BUK96180-100A
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features
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O220AB
OT404
BUK95180-100A
BUK96180-100A
O220AB
OT40otation
BUK95180-100A
BUK96180-100A
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SMD Transistor Marking Code 335
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device
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PHB55N03T
OT404
PHB55N03T
OT404
SMD Transistor Marking Code 335
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PHP55N04LT
Abstract: PHB55N04LT PHD55N04LT
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP55N04LT, PHB55N04LT PHD55N04LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible
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PHP55N04LT,
PHB55N04LT
PHD55N04LT
PHP55N04LT
O220AB)
PHB55N04LT
PHD55N04LT
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PHB55N03LT
Abstract: PHD55N03LT PHP55N03LT
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES PHP55N03LT, PHB55N03LT PHD55N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible
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PHP55N03LT,
PHB55N03LT
PHD55N03LT
PHP55N03LT
O220AB)
PHB55N03LT
PHD55N03LT
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phd55n03
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP55N03LT, PHB55N03LT, PHD55N03LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance
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PHP55N03LT,
PHB55N03LT,
PHD55N03LT
PHP55N03LT
phd55n03
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TRANSISTOR SMD MARKING CODE w2
Abstract: smd TRANSISTOR code marking w2 marking code C1H SMD circuit diagram of philips PC satellite receiver marking code C1H mmic lc oscillator 30ghz shf schematic circuit 6 pin TRANSISTOR SMD CODE PA GSM intercom circuit diagram vlf metal detector schematic murata smd inductors marking codes
Text: Appendix RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors Philips Semiconductors RF Manual 5th edition APPENDIX Product and design manual for RF Products Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright
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Header 8x2
Abstract: 742-08-3-103-J-XX 93CS56L PLX PCI9054 PCI9054-PQFP176 PCICONUNV BMC-30 1N4001 FA-365 LA12
Text: 1 2 3 4 5 6 3V3 NOT MOUNTED ES1 WORKAROUND Philips Semiconductors A D4 1N4001 3V3 D5 1N4001 D6 1N4001 C6 0.1 uF C2 0.1 uF C7 0.1 uF C3 0.1 uF C8 0.1 uF C4 0.1 uF C9 0.1 uF C5 0.1 uF C10 0.1 uF 0.1 uF A + C77 C1 12 MHz/3.3 V F316-0257 R2 3V3 DP1 DM1 OC1_N/VBUS
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1N4001
F316-0257
BLM21PG221SN1
MIC2026-2
FDN338P
uF/16
IP4059CX5
Header 8x2
742-08-3-103-J-XX
93CS56L
PLX PCI9054
PCI9054-PQFP176
PCICONUNV
BMC-30
1N4001
FA-365
LA12
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SOD124
Abstract: viper 171 TOPSWITCH BZG142 BZG142-68 viper flyback transformer Marking STMicroelectronics zener diode philips zener diode IEC 60060-1 Marking STMicroelectronics surface zener diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D168 BZG142 SMA ZenBlock; zener with integrated blocking diode Product specification Supersedes data of 2001 Apr 17 2001 Aug 20 Philips Semiconductors Product specification SMA ZenBlock; zener with integrated blocking diode
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M3D168
BZG142
MGU215
DO-214AC)
SCA73
613510/03/pp8
SOD124
viper 171
TOPSWITCH
BZG142
BZG142-68
viper flyback transformer
Marking STMicroelectronics zener diode
philips zener diode
IEC 60060-1
Marking STMicroelectronics surface zener diode
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M3D462
Abstract: IEC 60060-1 starplug philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D462 BZG142 SMA ZenBlock; zener with integrated blocking diode Product specification Supersedes data of 2000 Dec 19 2001 Apr 17 Philips Semiconductors Product specification SMA ZenBlock; zener with integrated blocking diode
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M3D462
BZG142
DO-214AC
613510/02/pp8
M3D462
IEC 60060-1
starplug philips
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BLC5G22LS-100
Abstract: BLC5G22-100 LDMOS LDMOS Technology for RF Power Amplifiers BLC5G22 metallization LDMOS digital BLF4G22-100 ldmos pa driver BLF5G22-180
Text: 5th Generation LDMOS Philips’ 0.4 µm technology for base station RF PAs sets the standard in W-CDMA amplifier efficiency For RF power amplifiers PAs and base station manufacturers, our 5th generation LDMOS technology is a major advance. This technology offers key advantages for
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BUK7514-30
Abstract: PHP69N03T
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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O220AB
PHP69N03T
BUK7514-30
PHP69N03T
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BUK9514-30
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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BUK9514-30
BUK9514-30
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BUK7505-30A
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology which features very low on-state resistance. It is
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BUK7505-30A
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elco capacitor uf
Abstract: DBS13P TDA1561Q
Text: INTEGRATED CIRCUITS DATA SHEET TDA1561Q 2 x 23 W car radio power amplifier Preliminary specification Supersedes data of September 1991 File under Integrated Circuits, IC01 Philips Semiconductors 1995 May 08 Philips Semiconductors Preliminary specification
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TDA1561Q
TDA1561Q
13-lead
DBS13P)
SCD39
513061/1500/02/pp20
elco capacitor uf
DBS13P
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philips uaa series
Abstract: UF89 Uf 89 SERIE MS1 UAA 1001
Text: P H IL IP S UF 89 P ENTODE with variable mutual conductance for use as H.F. or I.P. amplifier PENTHODE à pente variable pour utilisation comme am plificatrice H.F. ou M . P. P ENTODE mit veränderlicher Steilheit zur Verwendung als HP- oder ZF-Verstärker
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