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    PHEMT GAN Search Results

    PHEMT GAN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    PHEMT GAN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SUF-8533SR

    Abstract: pHEMT operating junction temperature DS110718
    Text: SUF-8533 SUF-8533DC to 12 GHz, Cascadable pHEMT MMIC Amplifier DC to 12 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features RFMD’s SUF-8533 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier covering DC to 12 GHz. This pHEMT FET based amplifier


    Original     		PDF SUF-8533DC SUF-8533 16-Pin, SUF-8533 DS110718 SUF-8533SB SUF-8533SQ SUF-8533SR SUF-8533TR7 pHEMT operating junction temperature DS110718

    F31Z

    Abstract: SPF-3143Z SPF3143Z SPF-3143 pHEMT FET marking A spf3143
    Text: SPF-3143Z SPF-3143Z Low Noise pHEMT GaAs FET LOW NOISE pHEMT GaAs FET NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: SOT-343 Product Description Features SiGe BiCMOS Si BiCMOS SiGe HBT 9 GaAs pHEMT Si CMOS Si BJT GaN HEMT „ 0.58dB NFMIN at 2GHz


    Original     		PDF SPF-3143Z OT-343 31dBm SPF-3143Z DS091103 F31Z SPF3143Z SPF-3143 pHEMT FET marking A spf3143

    FPD200 DIE

    Abstract: No abstract text available
    Text: FPD200 FPD200General Purpose pHEMT Die GENERAL PURPOSE pHEMT DIE Package Style: Bare Die Product Description Features The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate,


    Original     		PDF FPD200 FPD200General FPD200 mx200Î 19dBm 12GHz 18GHz FPD200-000 DS090519 FPD200 DIE

    FPD200

    Abstract: FPD200 DIE MIL-HDBK-263 bjt 137 FPD200-000
    Text: FPD200 FPD200General Purpose pHEMT Die GENERAL PURPOSE pHEMT DIE Package Style: Bare Die Product Description Features The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate,


    Original     		PDF FPD200 FPD200General FPD200 25mx200m 19dBm 12GHz 18GHz FPD200-000 DS090519 FPD200 DIE MIL-HDBK-263 bjt 137 FPD200-000

    SUF-8533

    Abstract: gp bjt
    Text: SUF-8533DC to 12 GHz, Cascadable pHEMT MMIC Amplifier SUF-8533 Preliminary DC to 12 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features RFMD’s SUF-8533 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier covering DC to 12 GHz. This pHEMT FET based amplifier


    Original     		PDF SUF-8533DC SUF-8533 16-Pin, SUF-8533 EDS-106168 SUF-8533PCBA-410 gp bjt

    FPD1500DFN

    Abstract: FPD750DFN FPD750SOT89
    Text: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a


    Original     		PDF FPD750DFN FPD750DFN mx750 24dBm 85GHz 39dBm 85GHz) EB750DFN-BA FPD1500DFN FPD750SOT89

    P 9806 AD

    Abstract: No abstract text available
    Text: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power


    Original     		PDF FPD2000AS FPD2000AS 33dBm 46dBm 880MHz) EB-2000AS-AB 85GHz) EB-2000AS-AA P 9806 AD

    Transistor AC 51 0865 75 730

    Abstract: No abstract text available
    Text: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pmx1500Pm


    Original     		PDF FPD1500SOT89CE FPD1500SOT8 FPD1500SOT89CE 25Pmx1500Pm FPD1500SOT89CESQ FPD1500SOT89CESR FPD1500SOT89PCK 85GHz DS130523 Transistor AC 51 0865 75 730

    pseudomorphic HEMT

    Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
    Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm


    Original     		PDF FPD6836SOT343 FPD6836SOT3 OT343 FPD6836SOT343 mx750 1850MHz) 18dBm 2002/95/EC) FPD6836SOT343E FPD6836SOT343E-AG pseudomorphic HEMT TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564

    FPD1500

    Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
    Text: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a


    Original     		PDF FPD1500DFN FPD1500DFN mx750 27dBm 85GHz 42dBm 85GHz) EB1500DFN-BA FPD1500 SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE

    transistor Bc 542

    Abstract: transistor bc 567
    Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power


    Original     		PDF FPD1000AS FPD1000AS 31dBm 42dBm -52dBc 21dBm 85GHz) EB-1000AS-AA 14GHz) transistor Bc 542 transistor bc 567

    Untitled

    Abstract: No abstract text available
    Text: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pm x 3000Pm


    Original     		PDF FPD3000SOT89CE FPD3000SOT8 FPD3000SOT89CE 3000Pm FPD3000SOT89CESQ FPD3000SOT89PCK 85GHz FPD3000SOT89CESR DS111103

    FPD3000SOT89

    Abstract: FPD3000SOT89E InGaAs hemt biasing
    Text: FPD3000SOT89E FPD3000SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm


    Original     		PDF FPD3000SOT89E FPD3000SOT8 FPD3000SOT89E 25mx1500m FPD3000SOT89E: FPD3000SOT89PCK FPD3000SOT89ESQ DS100630 FPD3000SOT89 InGaAs hemt biasing

    FPD3000SOT89

    Abstract: No abstract text available
    Text: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm


    Original     		PDF FPD3000SOT89CE FPD3000SOT8 30dBm 45dBm FPD3000SOT89CE 25mx1500m FPD3000SOT89CE: FPD3000SOT89CECE EB3000SOT89-BC FPD3000SOT89

    Transistor AC 51 0865 75 834

    Abstract: No abstract text available
    Text: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m


    Original     		PDF FPD1500SOT89CE FPD1500SOT8 FPD1500SOT89CE mx1500ï FPD1500SOT89CESR FPD1500SOT89PCK FPD1500SOT89CESQ 85GHz DS111103 Transistor AC 51 0865 75 834

    FPD1500SOT89E

    Abstract: est 0114 FPD1500SOT89 MIL-HDBK-263
    Text: FPD1500SOT89E FPD1500SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm


    Original     		PDF FPD1500SOT89E FPD1500SOT8 FPD1500SOT89E 25mx1500m FPD1500SOT89E: FPD1500SOT89PCK FPD1500SOT89ESQ FPD1500SOT89ESR est 0114 FPD1500SOT89 MIL-HDBK-263

    PMX15

    Abstract: No abstract text available
    Text: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pmx1500Pm


    Original     		PDF FPD750SOT89 FPD750SOT89E FPD750SOT89CE Pmx1500 FPD750SOT89ESR FPD750SOT89EE FPD750SOT89EPCK FPD750SOT89EPCK-411 FPD750SOT89EPCK-412 FPD750SOT89ESQ PMX15

    Untitled

    Abstract: No abstract text available
    Text: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m


    Original     		PDF FPD750SOT89E FPD750SOT89 FPD750SOT89CE mx1500ï 25dBm FPD750SOT89PCK FPD750SOT89ESQ FPD750SOT89ESR

    Untitled

    Abstract: No abstract text available
    Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.


    Original     		PDF FPD7612P70 FPD7612P70 22dBm 85GHz 24GHz

    Untitled

    Abstract: No abstract text available
    Text: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25m x 3000m


    Original     		PDF FPD3000SOT89CE FPD3000SOT8 FPD3000SOT89CE 30dBm FPD3000SOT89CESQ FPD3000SOT89CESR FPD3000SOT89PCK DS111103 85GHz

    FPD1500SOT89

    Abstract: FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh
    Text: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		PDF FPD1500SOT89 FPD1500SOT8 FPD1500SOT89 25mx1500m 42dBm FPD1500SOT89E: FPD1500SOT89CESR FPD1500SOT89CESQ FPD1500SOT89CESB DS090612 FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh

    fpd3000

    Abstract: 3024D FPD3000SOT89
    Text: FPD3000SOT89CE FPD3000SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25m x 3000m


    Original     		PDF FPD3000SOT8 FPD3000SOT89CE FPD3000SOT89CE 3000m 30dBm 45dBm FPD3000SOT89CE: FPD3000SOT89CESQ FPD3000SOT89CESR fpd3000 3024D FPD3000SOT89

    FPD3000SOT89E

    Abstract: FPD3000SOT89CE FPD3000SOT89 micro transistor 1203 EB3000SOT89-BC
    Text: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		PDF FPD3000SOT89 FPD3000SOT8 30dBm 45dBm FPD3000SOT89 25mx1500m FPD3000SOT89E: FPD3000SOT89CE EB3000SOT89-BC FPD3000SOT89E FPD3000SOT89CE micro transistor 1203 EB3000SOT89-BC

    pseudomorphic HEMT

    Abstract: fpd7612general FPD7612 MIL-HDBK-263 AlGaAs resistivity
    Text: FPD7612 FPD7612General Purpose pHEMT GENERAL PURPOSE pHEMT Package Style: Bare Die Product Description Features The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed


    Original     		PDF FPD7612 FPD7612General FPD7612 25mx200m 12GHz 18GHz 22-A114. MIL-STD-1686 MIL-HDBK-263. pseudomorphic HEMT MIL-HDBK-263 AlGaAs resistivity