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    PHEMT* NOISE AMPLIFIER WITH BYPASS SWITCH Search Results

    PHEMT* NOISE AMPLIFIER WITH BYPASS SWITCH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4GQF15FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation

    PHEMT* NOISE AMPLIFIER WITH BYPASS SWITCH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2.F 1 marking

    Abstract: 4.1 amplifier circuit diagram dc to 3 ghz lna application circuits diode marking c2 sma FET GAAS marking a gaas Low Noise Amplifier sma marking code pd 2.4 agc 130 watts power amplifier schematic 500 watts amplifier schematic diagram Diode SMA marking code PD
    Text: MGA-72543 PHEMT* Low Noise Amplifier with Bypass Switch Data Sheet Description Features Avago’s MGA-72543 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA ,which is designed for an adaptive CDMA receiver LNA and adaptive CDMA transmit driver amplifier.


    Original     		PDF MGA-72543 MGA-72543 5989-3744EN 5989-4189EN 2.F 1 marking 4.1 amplifier circuit diagram dc to 3 ghz lna application circuits diode marking c2 sma FET GAAS marking a gaas Low Noise Amplifier sma marking code pd 2.4 agc 130 watts power amplifier schematic 500 watts amplifier schematic diagram Diode SMA marking code PD

    PHEMT* Noise Amplifier with Bypass Switch

    Abstract: rfics marking 76 A004R IS-136 MGA72543 MGA-72543 MGA-72543-TR2 marking code 02 mmic 2 bit dip switch MMIC SOT 343 marking CODE
    Text: PHEMT* Low Noise Amplifier with Bypass Switch Technical Data MGA-72543 Features • Lead-free Option Available Surface Mount Package SOT-343 SC-70 • Operating Frequency 0.1 GHz ~ 6.0 GHz • Noise Figure: 1.4 dB at 2 GHz • Gain: 14 dB at 2 GHz • Bypass Switch on Chip


    Original     		PDF MGA-72543 OT-343 SC-70) IS-95, J-STD-008) IS-136) A004R: Hi157 5988-4279EN 5989-1808EN PHEMT* Noise Amplifier with Bypass Switch rfics marking 76 A004R IS-136 MGA72543 MGA-72543 MGA-72543-TR2 marking code 02 mmic 2 bit dip switch MMIC SOT 343 marking CODE

    HMC373LP3

    Abstract: capacitor 0604 Low Noise Amplifiers lna 850 MHz
    Text: HMC373LP3 v01.0604 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz 8 Typical Applications Features The HMC373LP3 is ideal for basestation receivers: Noise Figure: 0.9 dB +35 dBm Output IP3 AMPLIFIERS - SMT • GSM, GPRS & EDGE


    Original     		PDF HMC373LP3 HMC373LP3 capacitor 0604 Low Noise Amplifiers lna 850 MHz

    DSRC 5.8 GHz

    Abstract: Tower Mounted Amplifiers Schematic schematic dsrc HMC604LP3 HMC604LP3E
    Text: HMC604LP3 / 604LP3E v00.0308 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 4.8 - 6.0 GHz LOW NOISE AMPLIFIERS - SMT 5 Typical Applications Features The HMC604LP3 / HMC604LP3E is ideal for: Noise Figure: 1.5 dB • WiMAX/C-band Radio Output IP3: +26 dBm


    Original     		PDF HMC604LP3 604LP3E HMC604LP3E DSRC 5.8 GHz Tower Mounted Amplifiers Schematic schematic dsrc

    ATF-54143 application notes

    Abstract: ATF54143.s2p low cost hearing aid circuit diagram circuit diagram of low cost hearing aid with applications PIN attenuator ADS model lna 2.5 GHZ s parameter ads design agilent ads combiner circuit diagram of low cost hearing aid agilent pHEMT transistor LNA LOW NOISE AMPLIFIER Tower Mounted Amplifier
    Text: A High IIP3 Balanced Low Noise Amplifier for Cellular Base Station Applications Using the Agilent Enhancement Mode PHEMT ATF-54143 Transistor and Anaren Pico Xinger 3 dB Hybrid Couplers Application Note 1281 Introduction Most base stations BTS can transmit a signal to a mobile


    Original     		PDF ATF-54143 5988-5688EN ATF-54143 application notes ATF54143.s2p low cost hearing aid circuit diagram circuit diagram of low cost hearing aid with applications PIN attenuator ADS model lna 2.5 GHZ s parameter ads design agilent ads combiner circuit diagram of low cost hearing aid agilent pHEMT transistor LNA LOW NOISE AMPLIFIER Tower Mounted Amplifier

    wifi transceiver block diagram

    Abstract: wi-fi transceiver block diagram wifi tdd Transceiver wifi transceiver
    Text: WiFi Front End Module Design for Smart Phone Applications Ping Li, Paul Dicarlo Skyworks Solutions, Inc. 20 Sylvan Road, Woburn, MA 01801 U.S.A. * Email: ping.li@skyworksinc.com Abstract Along with the explosive growth of smart phones, a new wave of the mobile device development is on the way, in


    Original     		PDF

    wifi 5 watt amplifier circuit

    Abstract: MGA-30489 MGA-30689 30689 ALM-1812 VMMK-1225 ACPM 5040 ACMD-7402 mga-62563 ALM-80110
    Text: Wireless Semiconductor Solutions for RF and Microwave Communications Selection Guide Your Imagination, Our Innovation Sense • Illuminate • Connect Avago Technologies Wireless Semiconductor Solutions for RF and Microwave Communications Accelerating Progress in


    Original     		PDF AV00-0138EN AV00-0157EN wifi 5 watt amplifier circuit MGA-30489 MGA-30689 30689 ALM-1812 VMMK-1225 ACPM 5040 ACMD-7402 mga-62563 ALM-80110

    Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN

    Abstract: 180NM IBM
    Text: IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 46, NO. 11, NOVEMBER 2011 2613 Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN Anuj Madan, Member, IEEE, Michael J. McPartlin, Member, IEEE, Zhan-Feng Zhou, Chun-Wen Paul Huang, Member, IEEE, Christophe Masse, and John D. Cressler, Fellow, IEEE


    Original     		PDF 11b/g Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN 180NM IBM

    Untitled

    Abstract: No abstract text available
    Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK A Selection of Hittite Components for Broadband Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation


    Original     		PDF HMC920LP5E HMC980 HMC981 HMC980LP4E

    Untitled

    Abstract: No abstract text available
    Text: CMH82 Preliminary Datasheet ? High-Linearity, Cellular LNA/Mixer IC for use in TDMA and CDMA Mobile Phones ? Integrated bypass switch for LNA ? GaAs PHEMT Process CDMA ? Leadless 3.5 x 3.5 mm. SMT package ? LO Input power range: -12.0 to 0 dBm IF LNA ? Operating voltage range: 2.7 to 4 V


    Original     		PDF CMH82 VQFN-20 CMH82

    Integrated Synthesizers with Mixers

    Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers
    Text: RFMD PRODUCT SELECTION GUIDE 2013-2014 Amplifiers Attenuators Modulators Switches Upconverters/Downconverters Voltage-Controlled Oscillators Synthesizers CATV Amplifiers and Tuners High Reliability Components Components for Cellular Applications Open Foundry Services


    Original     		PDF 11F-B, Integrated Synthesizers with Mixers Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers

    Untitled

    Abstract: No abstract text available
    Text: CMH192 Preliminary Datasheet ? High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones ? Integrated bypass switch for LNA ? GaAs PHEMT Process IF Out ? Leadless 3.5 x 3.5 mm. SMT package ? LO Input power range: -9.0 to 0 dBm ? Operating voltage range: 2.7 to 4 V


    Original     		PDF CMH192 VQFN-20 CMH192

    ku-band pll lnb

    Abstract: MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions System Block Diagrams and Suggested Products 3 Wireless Infrastructure 3 • Basestation Radiocard 5 • Basestation Low Noise Amplifier LNA 5 • Basestation Tower Mounted Amplifier (TMA)


    Original     		PDF 11a/b/g AV00-0061EN AV00-0116EN ku-band pll lnb MGA-68563 mga-62563 MMIC SOT 363 HP 5082-3081 ATF-36077 5Ghz lna transistor datasheet schottky diode 3 lead ATF-511P8 power fet 70 mil micro-X Package

    Infineon CMH192 GaAs

    Abstract: CMH192 mmic MIXER 210
    Text: GaAs MMIC CMH192 Preliminary Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process IF Out • Leadless 3.5 x 3.5 mm. SMT package • LO Input power range: -9.0 to 0 dBm


    Original     		PDF CMH192 VQFN-20 CMH192 Infineon CMH192 GaAs mmic MIXER 210

    CMOS LNA at 2.4 GHz

    Abstract: RF5511 9421 rf mems switch SiGE wlan LNA
    Text: RF5511 Proposed 3.3 V, SWITCH AND LNA FRONT END SOLUTION Package Style: FLIP CHIP, 11 PIN, 1 x 1 x 0.4 mm Features „ „ „ „ Single Die Front End Solution Single Supply Voltage 3.0 V to 4.5 V Integrated SP3T Switch and LNA with Bypass Typical gain is 11 dB and


    Original     		PDF RF5511 IEEE802 11b/g RF5511 DS090604 CMOS LNA at 2.4 GHz 9421 rf mems switch SiGE wlan LNA

    ATF at 2.4 Ghz

    Abstract: ATF-541M4-TR1 MARKING CODE l22 lna Base Station TMA C65 - 004 PHEMT marking code a 2501 KK 716 50 ohm 2 ghz Antenna marking code C5 zo 107
    Text: ATF-541M4 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Miniature Leadless Package Data Sheet Description Avago Technologies’ ­ ATF­‑541M4 is a high linearity, low noise, single supply E‑PHEMT housed in a miniature lead‑ less package. The ATF-541M4’s small size and low profile makes it ideal


    Original     		PDF ATF-541M4 ATF541M4 ATF-541M4 5988-9005EN AV01-0621EN ATF at 2.4 Ghz ATF-541M4-TR1 MARKING CODE l22 lna Base Station TMA C65 - 004 PHEMT marking code a 2501 KK 716 50 ohm 2 ghz Antenna marking code C5 zo 107

    PG311

    Abstract: No abstract text available
    Text: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -7.0 to 0 dBm


    Original     		PDF CMH192 Q62705-K608 VQFN-20 PG311

    CMH82

    Abstract: MMIC code -03
    Text: GaAs MMIC CMH82 Preliminary Datasheet • High-Linearity, Cellular LNA/Mixer IC for use in TDMA and CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process CDMA • Leadless 3.5 x 3.5 mm. SMT package • LO Input power range: -12.0 to 0 dBm


    Original     		PDF CMH82 VQFN-20 CMH82 MMIC code -03

    low noise high frequency HEMT from agilent

    Abstract: rfics marking 5 ATF-541M4 ATF-541M4-BLK ATF-541M4-TR1 ATF-541M4-TR2 L236
    Text: Agilent ATF-541M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Features • High linearity performance • Single Supply Enhancement Mode Technology[1] • Very low noise figure Description Agilent Technologies’s


    Original     		PDF ATF-541M4 5988-4025EN 5988-9005EN low noise high frequency HEMT from agilent rfics marking 5 ATF-541M4-BLK ATF-541M4-TR1 ATF-541M4-TR2 L236

    PCBA-410

    Abstract: No abstract text available
    Text: RF2374 3V LOW NOISE AMPLIFIER „ „ „ „ „ „ „ „ „ „ 6 RF OUT RF IN 1 Logic Control GND 2 5 GND 3 4 Functional Block Diagram Applications „ 7 GAIN SELECT „ Low Noise and High Intercept Point Adjustable Bias Current Power Down Control Low Insertion Loss Bypass


    Original     		PDF RF2374 800MHz RF2374 DS070501 PCBA-410

    LNA RF2373

    Abstract: RF2373 RF2370
    Text: RFMD RF2370 and RF2373 Broadband Low-Noise Amplifiers for WLAN and Digital Cellular Applications Features: • Low noise and high intercept point • Adjustable bias current Developed for WLAN and digital cellular applications, RFMD® offers broadband low


    Original     		PDF RF2370 RF2373 RF2370) RF2373 LNA RF2373

    RF3858

    Abstract: RF pcb antenna 922 928 RF3858PCK-410 RF3858SR
    Text: RF3858 RF38583.0V to 4.2V, ISM Band Transmit/Receive Module with Diversity Transfer Switch 3.0V TO 4.2V, ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH GND GND GND LNA OUT GND LNA VCC Package: LGA, 32-pin, 8mm x 8mm x 1.2mm LNA IN 1 32 31


    Original     		PDF RF38583 RF3858 32-pin, DS111104 RF3858 RF3858SR RF3858TR13 RF3858PCK-410 RF pcb antenna 922 928 RF3858PCK-410

    AS5V

    Abstract: RF2374 QFN-8 RF
    Text: RF2374 3V LOW NOISE AMPLIFIER „ „ „ „ „ „ „ „ „ „ 6 RF OUT RF IN 1 Logic Control GND 2 5 GND 3 4 Functional Block Diagram Applications „ 7 GAIN SELECT „ Low Noise and High Intercept Point Adjustable Bias Current Power Down Control Low Insertion Loss Bypass


    Original     		PDF RF2374 800MHz RF2374 DS070705 AS5V QFN-8 RF

    MGA72543

    Abstract: No abstract text available
    Text: What HEWLETT 1 "KM PACK ARD PHEMT* Low Noise Amplifier with Bypass Switch Technical Data MGA-72543 Features • O perating Frequ en cy 0.1 GHz ~ 6.0 GHz Surface Mount Package SOT-343 SC-70 • N oise Figure: 1.4 dB at 2 GHz • Gain: 14 dB at 2 GHz • B ypass S w itch on Chip


    OCR Scan     		PDF MGA-72543 OT-343 SC-70) MGA72543