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    PH-13 TRANSISTOR Search Results

    PH-13 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PH-13 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    0119A

    Abstract: A3240 A3240ELH halleffect sensor
    Text: PRELIMINARY INFORMATION subject to change without notice July 13, 1999 X Suffix ‘–LT’ & ‘–UA’ Pinning PTCT CC 2 3 OUTPUT SUPPLY 1 GROUND V Dwg. PH-003-2 Pinning is shown viewed from branded side. Data Sheet 27621.20 3240 CHOPPER-STABILIZED, PRECISION


    Original     		PDF PH-003-2 A3240-- MH-015 0119A A3240 A3240ELH halleffect sensor

    0119A

    Abstract: A3280 A3281 A3281ELH A3283 SC 3281
    Text: PRELIMINARY INFORMATION subject to change without notice July 13, 1999 X Suffix ‘–LT’ & ‘–UA’ Pinning PTCT 1 2 3 GROUND OUTPUT CC SUPPLY V Dwg. PH-003-2 Pinning is shown viewed from branded side. ABSOLUTE MAXIMUM RATINGS at TA = +25°C Supply Voltage, VCC . 26.5 V


    Original     		PDF PH-003-2 MH-015 0119A A3280 A3281 A3281ELH A3283 SC 3281

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    Untitled

    Abstract: No abstract text available
    Text: GaN POWER with UMS UMS State-of-the-Art Offer UMS launches its first family of state-of-the-art GaN power transistors: • High Power • High Efficiency • Thermally Optimized UMS GaN transistors are available in Flanged Packages. General Purpose Part Number


    Original     		PDF CHK015A-SMA CHK025A-SOA CHK040A-SOA CHK080A-SRA CHZ050

    Untitled

    Abstract: No abstract text available
    Text: 2N2880 Qualified Levels: JAN, JANTX, and JANTXV NPN Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/315 DESCRIPTION This NPN silicon transistor is rated at 5 amps and is military qualified up to a JANTXV level. This TO-59 isolated package features a 180 degree lead orientation.


    Original     		PDF 2N2880 MIL-PRF-19500/315 T4-LDS-0327, 190-32UNF-2A

    2n3749

    Abstract: No abstract text available
    Text: 2N3749 Qualified Levels: JAN, JANTX, and JANTXV NPN Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/315 DESCRIPTION This NPN silicon transistor is rated at 5 amps and is military qualified up to the JANTXV level. This TO-111 isolated package features a 180 degree lead orientation.


    Original     		PDF 2N3749 MIL-PRF-19500/315 O-111 H28/1 FED-STD-H28/1) T4-LDS-0328, 190-32UNF-2A 2n3749

    TA 8644

    Abstract: BFP690 SCT595 GMA marking
    Text: BFP690 NPN Silicon Germanium RF Transistor 4 Preliminary data 5  For medium power amplifiers  Maxim. available Gain Gma = 17 dB at 1.8 GHz 3  Gold metallization for high reliability 2  70 GHz fT - Silicon Germanium technology 1 VPW05980 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFP690 VPW05980 SCT595 200mA Oct-30-2002 TA 8644 BFP690 SCT595 GMA marking

    marking r4s

    Abstract: R4S BFP640 BFP640 BFP640 noise figure
    Text: BFP640 3 NPN Silicon Germanium RF Transistor Preliminary data 4  High gain low noise RF transistor  Provides outstanding performance for a wide range of wireless applications 2  Ideal for CDMA and WLAN applications 1  Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640 VPS05605 OT343 Jul-25-2002 marking r4s R4S BFP640 BFP640 BFP640 noise figure

    80mAF

    Abstract: 6069 marking
    Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability


    Original     		PDF BFP650 VPS05605 OT343 Aug-16-2004 80mAF 6069 marking

    R4S BFP640

    Abstract: BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz
    Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz


    Original     		PDF BFP640 VPS05605 OT343 Apr-21-2004 R4S BFP640 BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz

    D1407

    Abstract: BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406
    Text: BUZ54 PowerMOS transistor N AMER PH IL IP S/ DISCR ET E — QbE D — — • ^53=131 D014717 5 7 31-13 ~ — - July 1987 QUICK REFERENCE DATA PARAMETER sym bo l Drain-source voltage VDS Drain current d.c. Id Total power dissipation Ptot Drain-source on-state resistance


    OCR Scan     		PDF BUZ54_ bfa53131 BUZ54 T-39-13 D1407 BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406

    LMT2903N

    Abstract: lmt2903 LMT393 LMT393D LM 2903 MOTOROLA LMT2903D T393 LM 797 T2903 LMT39
    Text: Tö Lÿnh Mürphÿ Fréni Motorola Desìqn-NÉT Ph:602-244-659i Fäx:6Ö2-244-6693 797 13:55 MOTOROLA LMT393, LMT2903 • SEMICONDUCTOR TECHNICAL DATA ADVANCE INFORMATION DUAL SINGLE SUPPLY COMPARATORS □UAL COMPARATORS The LMT393family of comparators are dual independent voltage


    OCR Scan     		PDF 602-244-659i LMT393, LMT2903 LMT393family T2903 LMT2903N lmt2903 LMT393 LMT393D LM 2903 MOTOROLA LMT2903D T393 LM 797 T2903 LMT39

    TRANSISTOR BD 338

    Abstract: Philips 336 transistor 338 BD 338 N 1507-50A BD335 BD331
    Text: BD332; 334 BD336; 338 PH I L I P S INTERNATIONAL SbE J> I 7 1 1 0 0 2 b 0 0 4 2 0 =^ lfl4 I H P H I N SILICON DARLINGTON POWER TRANSISTORS T'13-3i P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; plastic SO T-82 envelope for clip mounting; can also be soldered


    OCR Scan     		PDF BD332; BD336; 13-3i BD337. T--33--31 711002b TRANSISTOR BD 338 Philips 336 transistor 338 BD 338 N 1507-50A BD335 BD331

    IH33

    Abstract: LIMING relay ECG978 relay by liming YBS3 LIMING VOLTAGE RELAY APPLICATIONS OF astable multivibrator
    Text: I PH ILIPS E C G I NC 17E D • bbSBTEö ECG978 DUAL TIMING CIRCUIT Sem iconductors 14 13 12 I I FEATURES: • TIM IN G FROM M IC R O SEC O N D S THROUGH HOURS • OPERATES IN BOTH ASTABLE A N D M O N O ­ STABLE M OOES • ADJUSTABLE DUTY C Y C L E • H IGH CURRENT OUTPUT C A N SOURCE OR


    OCR Scan     		PDF ECG978 ECG978 22-SECOND IH33 LIMING relay relay by liming YBS3 LIMING VOLTAGE RELAY APPLICATIONS OF astable multivibrator

    KTC4520

    Abstract: TT-B-2
    Text: KEC SEMICONDUCTOR KTC4520 TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. FEATURES • Excellent Switching Times. : ton=0.5juS Max. , tf=0.3j/S(M ax.), a t Ic=2A.


    OCR Scan     		PDF KTC4520 220AB ELECTR05 KTC4520 TT-B-2

    CI L200

    Abstract: KTC4521
    Text: SEMICONDUCTOR KTC4521 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. FEATURES • Excellent Switching Times. : ton=0.5iiS Max. , tf=0.3/iS(Max.), at IC=4A. • High Collector Voltage : V c e o = 5 0 0 V .


    OCR Scan     		PDF KTC4521 200/iH CI L200 KTC4521

    F40 marking

    Abstract: KTC3882
    Text: KTC3882 SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. TV TUNER, VHF OSCILLATOR APPLICATION. A MILLIMETERS 2.93+0.20 B 1.30+0.20/—0.15 C D 1.30 MAX 0.45+0.15/—0.05 E 2.40+0.3 0 /- 0 .20 DIM MAXIMUM RATINGS Ta=25°C


    OCR Scan     		PDF KTC3882 OT-23 50MHzV F40 marking KTC3882

    Untitled

    Abstract: No abstract text available
    Text: KRC407 — SEMICONDUCTOR KRC409 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.


    OCR Scan     		PDF KRC407 KRC409TRANSISTOR KRC409 KRC408 KRC407â

    TIP31C

    Abstract: TIP32C
    Text: SEMICONDUCTOR TECHNICAL DATA TIP32C TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Complementary to TIP31C. MILLIMETERS MAXIMUM RATINGS Ta=25°C 15.30 MAX CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage -100 V V CBO Collector-Emitter Voltage


    OCR Scan     		PDF TIP32C TIP31C. 220AB --500mA -30-100-300-lk -3k-10k -3k-10k TIP31C TIP32C

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    KTA2014E

    Abstract: KTC4075E
    Text: KTA2014E SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Ii f e Linearity : h F E 0 .1 m A /h F E (2 m A )= 0 .9 5 (T y p .). • Low Noise : NF=ldB(Typ.), 10dB(Max.).


    OCR Scan     		PDF KTA2014E KTC4075E. KTA2014E KTC4075E

    kra102s equivalent

    Abstract: KRA104S kra102s KRA101S-KRA106S 106S KRA101S KRA103S KRA105S KRA106S transistor mark PH
    Text: K R A IO ISKRA106S SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.


    OCR Scan     		PDF KRA101S- KRA106S KRA101S KRA102S KRA103S KRA104S KRA105S KRA106S KRA105S kra102s equivalent KRA101S-KRA106S 106S transistor mark PH

    TIP31C

    Abstract: TIP32C
    Text: SEMICONDUCTOR TIP32C TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Complementary to TIP31C. DIM MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL Collector-Base Voltage RATING UNIT -100 V CBO


    OCR Scan     		PDF TIP32C TIP31C. --500mA -30-100-300-lk -3k-10k TIP31C TIP32C