TB223
Abstract: amidon BN-61-202
Text: June 22, 2012 TB223 Frequency=20-35MHz Pout=30W Gain=17dB Vds=24Vdc Idq=0.4A Efficiency=30 to 58% L2701 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com June 22, 2012 TB223 Pout/Gain vs Pin: Freq=20 MHz, Vds=24Vdc, Idq=0.4A
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TB223
20-35MHz
24Vdc
L2701
TB223
24Vdc,
17-turn,
850mu
amidon BN-61-202
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F-WH-D-8025M24S
Abstract: No abstract text available
Text: Product Specification DC Fan Part Number: F-WH-D-8025M24S Central Components Manufacturing, 440 Lincoln Blvd., Middlesex, NJ 08846 Ph:732-469-5720 Fx: 732-469-1919 F-WH-D-8025M24S DATA SHEET GENERAL SPECIFCIATION Frame and Impeller Thermoplastic Lead wires
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F-WH-D-8025M24S
/-10MM,
80x80x25mm
10kgf.
F-WH-D-8025M24S
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C5V6 ph
Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Text: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER
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1N821
1N4733A
1N821A
1N4734A
1N823
1N4735A
1N823A
C5V6 ph
C18 ph
PH C5V1
philips diode PH 33D
C8V2 PH
C10 PH
c4v7 ph
c5v1ph
c3v9ph
C33PH
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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Digital Weighing Scale schematic
Abstract: tedea 1042 Tedea-Huntleigh model 1022 schematic diagram to convert 230VAC to 5VDC POWER tedea huntleigh load cell 3410 tedea load cell 1004 Weighing scale sensor gozinta Tedea-Huntleigh 9010 manual weight indicator vt200 tedea huntleigh load cell 3411
Text: VISHAY INTERTECHN O L O G Y , INC . INTERACTIVE data book load cells and indicators vishay transDucers vse-db0086-0802 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0086-0802
Digital Weighing Scale schematic
tedea 1042
Tedea-Huntleigh model 1022
schematic diagram to convert 230VAC to 5VDC POWER
tedea huntleigh load cell 3410
tedea load cell 1004
Weighing scale sensor gozinta
Tedea-Huntleigh 9010
manual weight indicator vt200
tedea huntleigh load cell 3411
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sm panda
Abstract: cable SM Fiber
Text: FBT WDM 980/1550nm PM Wavelength Division Multiplexer Parameter Specification Center Wavelength 980 nm & 1550 nm Band Width + 10 nm Insertion Loss ≤ 0.8 dB Isolation ≥ 17 dB Extinction Ratio > 17dB Return Loss ≥ 55 dB 980nm Port SM or 980 PM Panda fiber
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980/1550nm
980nm
1550nm
sm panda
cable SM Fiber
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SPC56EC74
Abstract: No abstract text available
Text: SPC564Bxx SPC56ECxx 32-bit MCU family built on the Power Architecture for automotive body electronics applications Datasheet target specification • Communication interfaces – Up to 6 FlexCAN with 64 buffers each – Up to 10 LINFlex/UART channels
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SPC564Bxx
SPC56ECxx
32-bit
AES-128
32-ch.
SPC56EC74
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SPC564B64
Abstract: SPC56EC74 SPC56EC64
Text: SPC564Bxx SPC56ECxx 32-bit MCU family built on the Power Architecture for automotive body electronics applications Target specification Features • ■ Communication interfaces – Up to 6 FlexCAN with 64 buffers each – Up to 10 LINFlex/UART channels
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SPC564Bxx
SPC56ECxx
32-bit
AES-128
32-ch.
SPC564B64
SPC56EC74
SPC56EC64
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SPC56EC64
Abstract: SPC56EC74 SPC564B64 SPC564B74 spc564b64l7 SPC564B70 PJ6N SPC56EC74L7 SPC56EC70 e200z0h
Text: SPC564Bxx SPC56ECxx 32-bit MCU family built on the Power Architecture for automotive body electronics applications Target specification Features • e200z4d, 32-bit Power Architecture® – up to 120 MHz and 200 MIPs operation ■ e200z0h, 32-bit Power Architecture
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SPC564Bxx
SPC56ECxx
32-bit
e200z4d,
e200z0h,
64KByte
16-entry
QFP176)
SPC56EC64
SPC56EC74
SPC564B64
SPC564B74
spc564b64l7
SPC564B70
PJ6N
SPC56EC74L7
SPC56EC70
e200z0h
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PH 17G
Abstract: MBG048 PH 17D BYD17J philips diode PH 15 DIODE PH AV 20 BYD17K specification of BYD17M DIODE BYD17 BYD17G
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D121 BYD17 series Controlled avalanche rectifiers Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 26 Philips Semiconductors Product specification Controlled avalanche rectifiers
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M3D121
BYD17
MAM061
PH 17G
MBG048
PH 17D
BYD17J
philips diode PH 15
DIODE PH AV 20
BYD17K
specification of BYD17M DIODE
BYD17G
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PH 17G
Abstract: PH 17D philips diode PH 15 BYD17D equivalent MBG048 specification of BYD17M DIODE BYD17g equivalent BYD17M BYD17 BYD17D
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D121 BYD17 series Controlled avalanche rectifiers Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01 1996 May 24 Philips Semiconductors Product specification
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M3D121
BYD17
MAM061
PH 17G
PH 17D
philips diode PH 15
BYD17D equivalent
MBG048
specification of BYD17M DIODE
BYD17g equivalent
BYD17M
BYD17D
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TPS54232
Abstract: car audio crossover B220A TPS54232D TPS54232DR
Text: TPS54232 www.ti.com . SLVS876 – NOVEMBER 2008 2A, 28V, 1MHz, STEP DOWN SWIFT DC/DC CONVERTER WITH ECO-MODE™
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TPS54232
SLVS876
TPS54232
car audio crossover
B220A
TPS54232D
TPS54232DR
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JESD22-A114A
Abstract: MSOP10 TPS54140 TPS54140DGQ TPS54140DGQR
Text: TPS54140 www.ti.com . SLVS889 – OCTOBER 2008 1.5-A, 42V STEP DOWN
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TPS54140
SLVS889
200-m
300kHz
JESD22-A114A
MSOP10
TPS54140
TPS54140DGQ
TPS54140DGQR
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Untitled
Abstract: No abstract text available
Text: TTw Optimum Choice 300 RED SCHOOL LANE PHILLIPSBURG, N.J. 08865 industries , INC. PART NUMBER %LI2 "L" NO DC DCR MAX. DCI MAX. Q iJ pH) (O) (A m p s ) “L” WITH DCI (pH) TEST LEVEL ( VRMS) 5% DCI (A m p s ) 10 % (908) 454-2600 FAX (908) 454-3742 FOR % DECREASE IN "L"
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AB0R
Abstract: keyboard interfacing controllers code 80C51 P83C542EBAA P87C542EBAA KSR3 KSR6
Text: INTEGRATED CIRCUITS IC20 hllips Semiconductors PHILIPS PH ILIPS 711QÔ2L 00ô7b00 T41 This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors Objective specification ACCESS.bus microcontroller 83C542/87C542 DESCRIPTION LOGIC SYMBOL
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83C542/87C542
83C542/87C542
8XC542
83C542)
87C542)
256x8
16-bit
853-0403G
711002t.
00fl7b23
AB0R
keyboard interfacing controllers code
80C51
P83C542EBAA
P87C542EBAA
KSR3
KSR6
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LH 531 G 24
Abstract: d sub female AWG 10 power dm121073 p1209 53742
Text: 17D *M W SERIES A M PHENOL D-SUB M IN IA TU RE CO M BINATIO N ARRANG EM ENT POWER/COAX A m ph en ols 17D *M W series are a sp a ce saving “D" style con ne cto r for ap plicatio ns w here signal con tacts and high pow er or shielded con tacts are required.
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il-C-24308.
T00S3AL.
D00DG4L.
LH 531 G 24
d sub female AWG 10 power
dm121073
p1209
53742
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TOKO RMC 2A6597H
Abstract: 2A6597H ICM4712701 RMC-2A6597H TOKO 455KHz ceramic filter SFG455 SFG455A3 TOKO 455KHz filter signetics rf Receiver Circuits signetics PLL
Text: SÖE D PH ILI PS INTERNATIONAL 711QflHb QQSQQbl 7H1 « P H I N Slgnetics RF Communications Preliminary specification Low-voltage high performance mixer FM IF system DESCRIPTION The NE/SA617 is a low voltage high performance monolithic FM IF system incorporating a mixer/oscillator, two limiting
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NE/SA617
NE/SA617
20-lead
NE617was
NE605.
711QflSb
TOKO RMC 2A6597H
2A6597H
ICM4712701
RMC-2A6597H
TOKO 455KHz ceramic filter
SFG455
SFG455A3
TOKO 455KHz filter
signetics rf Receiver Circuits
signetics PLL
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L33 TRANSISTOR
Abstract: transistor L33 npn l33 l33 sot23 l33 thermal UBC370 DD44170 transistor KIN BF747 BF747W
Text: NPN 1 GHz wideband transistor PH IL IP S INTERNATIONAL DESCRIPTION "/ ' SbE D • 3 i^ /^ 7 BF747W 71 1D ô E b G D 4 4 ‘17D L33 « P H I N PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It is primarily intended as a mixer, oscillator and IF amplifier in UHF
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BF747W
711DflEb
DD44170
OT323
BF747W
BF747.
UBC370
OT323.
L33 TRANSISTOR
transistor L33
npn l33
l33 sot23
l33 thermal
UBC370
transistor KIN
BF747
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PH 17D
Abstract: No abstract text available
Text: AM PHEN O L D -SU B M IN IA TU R E 17D/117D F SERIES FIXED M A C H IN ED C O N TA C T IN D U S T R IA L CO N NEC TO R A m ph en ols 17D and 117DF series are a fixed co n ta ct heavier du ty D-sub suitable for com m e rcial or industrial use. The m achined co n ta cts provide stability and
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17D/117D
117DF
T00S3flb
PH 17D
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M68732SHA
Abstract: No abstract text available
Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MODULE M68732SHA Silicon MOS FET Power Amplifier, 470-520MHz 6.7W FM PORTABLE PIN: l.Pin :RF INPUT :GATE BIAS SUPPLY 3 .V D D :DRAIN BIAS SUPPLY 4 .P0 :RF OUTPUT
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M68732SHA
470-520MHz
25deg
50ohms
50ohms
M68732SHA
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VTR17D1
Abstract: opto-switch VTR17E1 optoswitch
Text: Reflective Optoswitch V TR 17D1, 17E1 Arrow Retro with Flying Leads PRODUCT DESCRIPTION This series of reflective optical switches com bines an infrared em itting diode IRED w ith an NPN phototransistor (VTR17D1) or photodar lington (VTR17E1) in a one piece, sealed, IR
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VTR17D1,
3D30faCH
VTR17D1
VTR17E1
VTR17E1.
opto-switch
optoswitch
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PH 17G
Abstract: PH-17G ph-17j MBG048 BYD17G RECTIFIER BYD17 BYD17D BYD17G BYD17J BYD17K
Text: Philips Semiconductors Product specification Controlled avalanche rectifiers BYD17 series FEATURES • Glass passivated • High maximum operating temperature k a • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability
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BYD17
7110A2b
PH 17G
PH-17G
ph-17j
MBG048
BYD17G RECTIFIER
BYD17D
BYD17G
BYD17J
BYD17K
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Untitled
Abstract: No abstract text available
Text: SPF-2086, -2086K 0.1-12GHz Medium Power PHEMT G aAs FET October, 1995 Features - High Associated Gain: 17dB @ 2GHz, 10dB @ 12GHz - 0.2dB Noise Figure @ 2GHz, 0.9dB NF @ 12GHz 86 Plastic Package - +21 dBm Output Power at P1dB - 50% Power Added Efficiency 0.51 0 .02 0
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SPF-2086,
-2086K
1-12GHz
12GHz
21dBm
100mW
400mW
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