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    PG-DSO-20

    Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
    Text: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test


    Original     		PG-DSO-20 PG-RFP-10 H-34265-8 H-33265-8 H-30248-2 H-36248-2 H-33288-2 H-31248-2 H-37248-2 H-34288-2 PG-DSO-20 a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M PDF

    BCP56

    Abstract: LM7805 PTFA091201GL PTFA091201HL A0912
    Text: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in


    Original     		PTFA091201GL PTFA091201HL PTFA091201GL PTFA091201HL 120-watt PG-63248-2 PG-64248-2 BCP56 LM7805 A0912 PDF

    LM7805

    Abstract: elna 50v, 1uF LM7805 voltage regulator d 1879 TRANSISTOR BCP56 PTFA181001GL ELNA capacitor 100 uf 50v
    Text: Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the


    Original     		PTFA181001GL PTFA181001HL PTFA181001GL 100-watt LM7805 elna 50v, 1uF LM7805 voltage regulator d 1879 TRANSISTOR BCP56 ELNA capacitor 100 uf 50v PDF

    d683

    Abstract: elna 50v BCP56 LM7805 PTFA181001GL
    Text: PTFA181001GL Use GL only Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805 – 1880 MHz Description The PTFA181001GL is a 100-watt LDMOS FET designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz


    Original     		PTFA181001GL PTFA181001GL 100-watt d683 elna 50v BCP56 LM7805 PDF

    po111

    Abstract: 3773 transistor voltage diagram BCP56 LM7805 PTFA041501GL PTFA041501HL infineon gold
    Text: PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They


    Original     		PTFA041501GL PTFA041501HL PTFA041501GL PTFA041501HL 150-watt PG-64248-2 IS-95 po111 3773 transistor voltage diagram BCP56 LM7805 infineon gold PDF

    po111

    Abstract: ELNA capacitor 100 uf 50v transistor a09
    Text: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in


    Original     		PTFA091201GL PTFA091201HL PTFA091201HL 120-watt PG-63248-2 PG-64248-2 po111 ELNA capacitor 100 uf 50v transistor a09 PDF

    PTFB182503FL

    Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
    Text: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production


    Original     		PTFA041501E PTFA041501F PG-DSO-20-63 PG-RFP-10 H-33265-8 H-34265-8 H-30260-2 H-36260-2 H-30265-2 H-30248-2 PTFB182503FL PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503 PDF

    A211801E

    Abstract: A0912 TMA210 PTFA211801E A091201E "RF Power Transistors" ER 2680 PTF080101M PTF080101S PTF140451E
    Text: Preliminary Product Selection Guide Preliminary Product Selection Guide Pac kag es ffor or LDMO S RF P ower Tran sistor s and IC s ack age LDMOS Po ans ors ICs RF Power Product Selection Guide TEP AC - Therm al ly -Enh anc ed C er amic TEPA Thermal ally ly-Enh


    Original     		H-30248-2 H-36248-2 H-30260-2 H-36260-2 H-30265-2 H-31248-2 H-37248-2 H-31260-2 H-31260-2 H-31265-2 A211801E A0912 TMA210 PTFA211801E A091201E "RF Power Transistors" ER 2680 PTF080101M PTF080101S PTF140451E PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA181001GL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805 – 1880 MHz Description The PTFA181001GL is a 100-watt LDMOS FET designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz


    Original     		PTFA181001GL PTFA181001GL 100-watt PG-63248-2 PTFA181001HL PG-64248-2 PDF

    po111

    Abstract: LM7805 LM780
    Text: PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They


    Original     		PTFA041501GL PTFA041501HL PTFA041501HL 150-watt PG-63248-2 PG-64248-2 IS-95 po111 LM7805 LM780 PDF