IS-136
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG132G L-BAND SPDT SWITCH DESCRIPTION µPG132G is an L-Band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.
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PG132G
PG132G
IS-136
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IS-136
Abstract: PPG130G PPG131G PPG132G PPG133G PPG137GV-E1 PPG138GV
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PPG137GV L-BAND SPDT SWITCH DESCRIPTION The PPG137GV is a L-Band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital mobile communication system. It housed in an very small 8-pin SSOP that is smaller than usual 8-pin SOP and easy to install and contributes to
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PPG137GV
PPG137GV
PPG137GV-E1
IS-136
PPG130G
PPG131G
PPG132G
PPG133G
PPG137GV-E1
PPG138GV
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GSM based home appliance control circuit diagram
Abstract: PPG130G PPG131G PPG132G PPG133G PPG137GV-E1 PPG138GV PPG138GV-E1
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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nec vco
Abstract: P1314
Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT ¿ PG 139GV L-BAND DPDT MMIC SWITCH DESCRIPTION The ¿¿PG139GV is L-Band Double Pole, Double Throw (DPDT switch developed for digital cellular or cordless telephone and PCS applications.
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uPG139GV
nec vco
P1314
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC GaAs INTEGRATED CIRCUIT /PG132G L-BAND SPDT SWITCH DESCRIPTION /¿PG132G is an L-Band SPDT Single Pole D oubleThrow GaAs FET switch w hich w as developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.
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uPG132G
PG132G
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VCO NEC
Abstract: upg137gv nec vco
Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT ¿iPG137GV L-BAND SPDT SWITCH DESCRIPTION The //PG137GV is a L-Band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital mobile communication system. It housed in an very small 8-pin SSOP that is smaller than usual 8-pin SOP and easy to install and contributes to
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uPG137GV
//PG137GV
PG137GV-E1
VCO NEC
nec vco
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC GaAs INTEGRATED CIRCUIT /¿PG132G L-BAND SPDT SWITCH DESCRIPTION ¿¡PG132G is an L-Band SPDT Single Pole Double Throw GaAs FET switch w hich was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss.
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OCR Scan
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PDF
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uPG132G
PG132G
VP15-00-2
WS60-00-1
10535EJ7V0IF00)
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT uPG138GV L-BAND SPDT SWITCH DESCRIPTION The ¿iPG138GV is L-Band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital mobile com m unication system. It housed in an very small 8-pin SSOP that is smaller than usual 8-pin SOP and easy to install and contributes to
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uPG138GV
iPG138GV
iPG138GV,
iPG138GV)
jPG138GV-E1
IR35-00-3
WS60-00-1
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G132 NEC
Abstract: No abstract text available
Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT uPG137GV L-BAND SPDT SWITCH DESCRIPTION The ¿iPG137GV is a L-Band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital mobile communication system. It housed in an very small 8-pin SSOP that is smaller than usual 8-pin SOP and easy to install and contributes to
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OCR Scan
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PDF
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uPG137GV
iPG137GV
jPG137GV-E1
IR35-00-3
VP15-00-3
WS60-00-1
G132 NEC
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smd+2tx
Abstract: No abstract text available
Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT ¿ iP G 13 9 G V L-BAND DPDT MMIC SWITCH DESCRIPTION The ^¡PG139GV is L-Band Double Pole, Double Throw DPDT switch developed for digital cellular or cordless telephone and PCS applications.
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OCR Scan
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PDF
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PG139GV
VP15-00-3
WS60-00-1
smd+2tx
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