nec microwave
Abstract: NE3510 NEC Ga FET marking L NE3510M04-A NE3510M04 sdars HS350 NE3510M04-T2 NE3510M04-T2-A NE3510M04-T2B
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA Reference only
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NE3510M04
NE3510M04-A
NE3510M04-T2
NE3510M04-T2-A
NE3510M04-T2B
NE3510M04-T2B-A
nec microwave
NE3510
NEC Ga FET marking L
NE3510M04-A
NE3510M04
sdars
HS350
NE3510M04-T2
NE3510M04-T2-A
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Untitled
Abstract: No abstract text available
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA Reference only
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Original
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NE3510M04
NE3510M04-A
NE3510M04-T2
NE3510M04-T2-A
NE3510M04-T2B
NE3510M04-T2B-A
PG10676EJ02V0DS
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NE3510M04
Abstract: transistor RF S-parameters HS350 NE3510M04-A NE3510M04-T2 NE3510M04-T2-A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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