4c6 toroids
Abstract: Design of H.F. Wideband Power Transformers Philips Application Note ECO6907 4C6 toroid AN98030 2222 632 BLW96 ECO6907 BLW50F blw96 equivalent
Text: APPLICATION NOTE Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F AN98030 Philips Semiconductors Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F Application note AN98030 CONTENTS 1 PART 1 SINGLE-STAGE WIDEBAND 1.6 − 30 MHz LINEAR AMPLIFIER FOR 400 W PEP USING TWO BLW96
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BLW96
BLW50F
AN98030
BLW96
4c6 toroids
Design of H.F. Wideband Power Transformers
Philips Application Note ECO6907
4C6 toroid
AN98030
2222 632
ECO6907
BLW50F
blw96 equivalent
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philips ferroxcube 4c6
Abstract: ferroxcube toroid philips toroid 4c6 ferroxcube 4C6 toroid core Philips Components, Soft Ferrites Data Handbook M BLF175 ferroxcube 31 toroid core 4C6 toroid Philips Components, Soft Ferrites Data Handbook soft ferrites philips handbook
Text: APPLICATION NOTE A linear amplifier 1.6 − 28 MHz for 8 W PEP in class-A with the BLF175 NCO8705 Philips Semiconductors A linear amplifier (1.6 − 28 MHz) for 8 W PEP in class-A with the BLF175 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 GENERAL CONSIDERATIONS
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BLF175
NCO8705
SCA57
philips ferroxcube 4c6
ferroxcube toroid
philips toroid 4c6
ferroxcube 4C6 toroid core
Philips Components, Soft Ferrites Data Handbook M
BLF175
ferroxcube 31 toroid core
4C6 toroid
Philips Components, Soft Ferrites Data Handbook
soft ferrites philips handbook
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8122 Tube
Abstract: BURLE-8122 8122 application note ERIE CAPACITORS CD77-030 Jettron Products TP-105 TP-118 TP-122 300 watts amplifier circuit diagram
Text: Return To Product Page 8122 Power Tube Linear Beam Power Tube Coaxial-Electrode Structure Ceramic Metal Seals Full Ratings up to 500 MHz Forced-Air Cooled 380 Watts PEP Output at 30 MHz AB1 570 Watts PEP Output at 30 MHz AB2 300 Watts CW Output at 470 MHz
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BURLE-8122
11-Pin
E11-81
GE11-1
8122 Tube
8122 application note
ERIE CAPACITORS
CD77-030
Jettron Products
TP-105
TP-118
TP-122
300 watts amplifier circuit diagram
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8122 Tube
Abstract: beam Tube BURLE-8122 8122 ERIE 9813-000 "Power Tube" diodes 8122 CD464-2 burle sk 3050 c
Text: 8122 Power Tube Linear Beam Power Tube Coaxial-Electrode Structure Ceramic Metal Seals Full Ratings up to 500 MHz Forced-Air Cooled 380 Watts PEP Output at 30 MHz AB1 570 Watts PEP Output at 30 MHz AB2 Watts CW Output at 470 MHz Matched Pair Available BURLE-8122 is a very small, low-cost, forced-air-cooled beam
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BURLE-8122
8122 Tube
beam Tube
8122
ERIE 9813-000
"Power Tube"
diodes 8122
CD464-2
burle
sk 3050 c
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NTE338F
Abstract: No abstract text available
Text: NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W PEP
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NTE338F
NTE338F
30MHz.
30MHz
-30dB
001MHz
30MHz
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MRF426
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP
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MRF426
MRF426
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NTE338F
Abstract: 20W power transistor
Text: NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W PEP
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NTE338F
NTE338F
30MHz.
30MHz
001MHz
30MHz
20W power transistor
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allen bradley CB series
Abstract: "class AB Linear" hf CB allen bradley
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF426 . . . designed for high gain driver and output linear am plifier stages in 1.5 to 30 MHz HF/SSB equipment. • • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP
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MRF426
MRF426
allen bradley CB series
"class AB Linear" hf
CB allen bradley
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"class AB Linear" hf
Abstract: allen bradley CC series Mrf426
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F426 The RF Line NPN Silicon RF P o w er Tran sisto r . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP
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MRF426
"class AB Linear" hf
allen bradley CC series
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MIL-STD-1311
Abstract: 300 watt hf transistor 12 volt HF SSB APPLICATIONS RF 28 v 300 watt beam Tube vhf linear pulse power amplifier TP-105 TP-118 Jettron Products
Text: Power Tube Linear Beam Power Amplifier Tube 1000 Watts Peak Sync Output in VHF Translator Service 265 Watt Average-Noise-Power Output with White Noise Loading 300 Watt Power Output in UHF-Linear Telephony Service Watts PEP Output in SSB Suppressed-Carrier Service
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MIL-STD-1311.
MIL-STD-1311
300 watt hf transistor 12 volt
HF SSB APPLICATIONS RF 28 v 300 watt
beam Tube
vhf linear pulse power amplifier
TP-105
TP-118
Jettron Products
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MRF426
Abstract: equivalent transistor rf "30 mhz"
Text: MRF426 The RF Line NPN Silicon Power Transistor 25W PEP , 30MHz, 28V M/A-COM Products Released - Rev. 05202009 Designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • • • • • Product Image Specified 28 V, 30 MHz characteristics —
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MRF426
30MHz,
MRF426
equivalent transistor rf "30 mhz"
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blx13
Abstract: 2204B
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line N P N Silico n RF Pow er T ran sistor MRF426 . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP
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MRF426
MRF426
blx13
2204B
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circuit diagram of door interlock system
Abstract: A 1266 Y1266 beam Tube spark gap TP-105 TP-117 TP-118 TP-122 thyratron
Text: 8794 Power Tube Linear Beam Power Tube - 3000 Watts Peak Sync in Translator Service - 10,000 Watts PEP Output in SSB Service - Full Input to 400 MHz The BURLE 8794 is intended specifically to meet the high linearity, high gain requirements of modern, reliable, SSB and
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Y1277
circuit diagram of door interlock system
A 1266
Y1266
beam Tube
spark gap
TP-105
TP-117
TP-118
TP-122
thyratron
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TIC 136 Transistor
Abstract: mrf475 tic 136 mrf475 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF475 The RF Line 12 W PEP — 12 W (CW) — 30 MHz NPN SILICON RF POWER TRANSISTOR R F POWER TRANSISTO R . . . designed prim arily for use in single sideband linear amplifier output applications in citizens band and other communications
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MRF475
TIC 136 Transistor
mrf475
tic 136
mrf475 transistor
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Untitled
Abstract: No abstract text available
Text: e PTB 20230 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended
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1-877-GOLDMOS
1301-PTB
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ericsson 20151
Abstract: 9434 1198E bav 17 diode
Text: e PTB 20151 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended
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ATC-100
G-200
1-877-GOLDMOS
1301-PTB
ericsson 20151
9434
1198E
bav 17 diode
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ericsson 20151
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20151 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across 1.8 to 2.0 GHz frequency band. Rated at 45 watts minimum output power for PEP applications, it is
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ATC-100
G-200
ericsson 20151
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828 TRANSISTOR equivalent
Abstract: No abstract text available
Text: e PTB 20230 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended
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1-877-GOLDMOS
1301-PTB
828 TRANSISTOR equivalent
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4440 AMPLIFIER CIRCUIT
Abstract: 8877 tube TEM00 TP105 TP-105
Text: Return To Product Page 8891 Power Tube Beam Power Tube • • • • • 20.0 Kilowatt Peak Sync. Output Thru VHF-TV Band at 13 dB Gain 17.5 Kilowatt PEP Output for Single Sideband Service at 20 dB Gain Efficient Forced-Air Cooling Full Input to 400 MHz
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DC100V
Abstract: MK715 resistive touch panel bolymin touch panels Bolymin
Text: BOLYMIN Touch Panel Description Touch panels are input devices that apply the film processing techologies the company has acquired while working on plastic film panels PEP . Since the keyboards themselves are transparent, the touch panels can be placed directly on top of a display device. They are space-saving,
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MK715
DC100V
resistive touch panel bolymin
touch panels
Bolymin
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dlc10
Abstract: RF NPN POWER TRANSISTOR 3 GHZ 200 watts package 20223 si1206 r410a
Text: ERICSSON ^ PTB 20151 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter HF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended
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ATC-100
G-200
BCP56
dlc10
RF NPN POWER TRANSISTOR 3 GHZ 200 watts
package 20223
si1206
r410a
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PTB 20245
Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ
Text: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is
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G-200
1-877-GOLDMOS
1301-PTB
PTB 20245
RF NPN POWER TRANSISTOR C 10-12 GHZ
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RF NPN POWER TRANSISTOR 3 GHZ 200 watts
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20230 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor D escription The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended
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AP602-F
Abstract: AP602 AP602-PCB1960 AP602-PCB2140 AP602-PCB900 JESD22-A114
Text: AP602 High Dynamic Range 4W 28V HBT Amplifier Product Features Product Description • 800 – 2400 MHz • +35.7 dBm P1dB • -52 dBc ACLR @ ½W PAVG • -47 dBc IMD3 @ ½W PEP • 16% Efficiency @ ½W PAVG Functional Diagram The AP602 is a high dynamic range power amplifier in a
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AP602
AP602
JESD22-A114
JESD22-C101
J-STD-020
1-800-WJ1-4401
AP602-F
AP602-PCB1960
AP602-PCB2140
AP602-PCB900
JESD22-A114
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