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    PEM 83 Search Results

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    PEM 83 Price and Stock

    Texas Instruments LMK04832PAP/EM

    Clock & Timer Development Tools Radiation-tolerant, 30-krad, ultra-low-noise, 3.2-GHz 15-output JESD204C clock jitter cleaner 64-HTQFP 25 to 25
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LMK04832PAP/EM
    • 1 $4654.87
    • 10 $4654.87
    • 100 $4654.87
    • 1000 $4654.87
    • 10000 $4654.87
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    PEM 83 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mhx2

    Abstract: No abstract text available
    Text: PEM Series CHASSIS MOUNT, MULTI-STAGE EMI/RFI LINE FILTER MECHANICAL DIMENSIONS Unit: mm A L L' 2x N 4.8 N' E D FEATURES The PEM series offers wide variety of high performance EMI filters in numerous packages. This series offers a variety of circuit types with multiple stages of filtration over a


    Original     		PDF 10KHz 30MHz. 115/250VAC PEM20Q-8M-GC3 PEM20Q-8-GC3 mhx2

    MS-026D

    Abstract: as5sp128k32dq
    Text: COTSPEM PEM COTS AS5SP128K36DQ AS5SP128K36DQ SSRAM SSRAM SSRAM AustinSemiconductor, Semiconductor,Inc. Inc. Austin Parameter Symbol Cycle Time tCYC Cycle Time tCYC Cycle Time tCYC Clock Access Time tCD Clock Access Time tCD Clock Access Time tCD Output Enable


    Original     		PDF AS5SP128K36 MS-026D as5sp128k32dq

    H11M1

    Abstract: n1u3 SSTL25 RAS 2415 d4m7
    Text: i PEM 2.4G b SDRAM-DDR 2.4Gb Austin Semiconductor, Inc. AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS „ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps „ Package: „ 40 - 70% SPACE SAVINGS „ Reduced part count


    Original     		PDF AS4DDR32M72PBG1 32Mx72 333Mbps 23mm-1 208-PBGA H11M1 n1u3 SSTL25 RAS 2415 d4m7

    H11M1

    Abstract: n1u3 SSTL25
    Text: i PEM 2.4G b SDRAM-DDR 2.4Gb Austin Semiconductor, Inc. AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS „ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps „ Package: „ 40 - 70% SPACE SAVINGS „ Reduced part count


    Original     		PDF AS4DDR32M72PBG1 32Mx72 333Mbps 23mm-1 208-PBGA H11M1 n1u3 SSTL25

    AS4DDR16M72PBG

    Abstract: AS4DDR32M72PBG W3E16M72S-XBX E1-E16
    Text: i PEM 1.2 G b SDRAM-DDR Gb Austin Semiconductor, Inc. AS4DDR16M72PBG 16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS „ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps „ Package: „ 40% SPACE SAVINGS „ Reduced part count „ Reduced I/O count


    Original     		PDF AS4DDR16M72PBG 16Mx72 333Mbps M72-8/XT AS4DDR16M72-10/XT 219-PBGA AS4DDR16M72PBG AS4DDR32M72PBG W3E16M72S-XBX E1-E16

    Untitled

    Abstract: No abstract text available
    Text: COTS PEM SDRAM AS4DDR32M16 8 Meg x 16 x 4 Banks PIN ASSIGNMENT Double Data Rate SDRAM COTS, Plastic Encapsulated Microcircuit Top View FIGURE 1: 66-Pin TSOP FEATURES • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/received with data,


    Original     		PDF AS4DDR32M16 66-Pin AS4DDR32M16DG-75/IT -40oC 105oC

    Untitled

    Abstract: No abstract text available
    Text: COTS PEM SDRAM AS4DDR32M16 8 Meg x 16 x 4 Banks PIN ASSIGNMENT Double Data Rate SDRAM COTS, Plastic Encapsulated Microcircuit Top View FIGURE 1: 66-Pin TSOP FEATURES • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/received with data,


    Original     		PDF AS4DDR32M16 66-Pin AS4DDR32M16DG-75/IT -40oC 105oC

    AS4DDR16M72PBG

    Abstract: AS4DDR32M72PBG W3E16M72S-XBX
    Text: i PEM 1.2 G b SDRAM-DDR Gb Austin Semiconductor, Inc. AS4DDR16M72PBG 16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS „ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps „ Package: „ 40% SPACE SAVINGS „ Reduced part count „ Reduced I/O count


    Original     		PDF AS4DDR16M72PBG 16Mx72 333Mbps 219-PBGA AS4DDR16M72PBG AS4DDR32M72PBG W3E16M72S-XBX

    AS5SP128K32DQ

    Abstract: CMOS linear array
    Text: COTS PEM AS5SP128K32DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 4.0Mb, 128K x 32, Synchronous SRAM Fast Access Times Parameter Cycle Time Clock Access Time


    Original     		PDF AS5SP128K32DQ MS026-D/BHA AS5SP128K32DQ CMOS linear array

    DM 321

    Abstract: DDR pinout AS4DDR32M72PBG
    Text: i PEM 2.4G b SDRAM-DDR 2.4Gb Austin Semiconductor, Inc. AS4DDR32M72PBG 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS „ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps „ Package: „ 40% SPACE SAVINGS „ Reduced part count „ Reduced I/O count


    Original     		PDF AS4DDR32M72PBG 32Mx72 333Mbps AS4DDR32M72-75/XT AS4DDR32M72-8/XT AS4DDR32M72-10/XT 219-PBGA DM 321 DDR pinout AS4DDR32M72PBG

    Untitled

    Abstract: No abstract text available
    Text: COTS PEM AS5SP256K36DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 9.0Mb, 256K x 36, Synchronous SRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0


    Original     		PDF AS5SP256K36DQ MS026-D/BHA

    transistor w2d

    Abstract: transistor w2a 1050C 850C
    Text: COTS PEM AS5SP512K36DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 CLK CE1\ I/O Gating and Control CE3\ BWx\ GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address Registers Row Decode Memory Array


    Original     		PDF AS5SP512K36DQ MS026-D/BHA transistor w2d transistor w2a 1050C 850C

    transistor w2d

    Abstract: AS5SP128K36DQ
    Text: COTS PEM AS5SP128K36DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 CLK CE1\ I/O Gating and Control CE3\ BWx\ GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address Registers Row Decode Memory Array


    Original     		PDF AS5SP128K36DQ 200Mhz 166Mhz 133Mhz MS026-D/BHA transistor w2d AS5SP128K36DQ

    Untitled

    Abstract: No abstract text available
    Text: CO TS PEM COTS SSRAM AS5SP256K36DQ Austin Semiconductor, Inc. 81 84 82 83 87 85 86 89 88 91 92 90 95 93 96 94 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\


    Original     		PDF AS5SP256K36DQ AS5SP256K36DQ

    transistor w2d

    Abstract: No abstract text available
    Text: COTS PEM AS5SP512K18DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 CLK CE1\ I/O Gating and Control CE3\ CONTROL BLOCK GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address Registers Row Decode


    Original     		PDF AS5SP512K18DQ MS026-D/BHA transistor w2d

    NASM45938

    Abstract: NASM25027 MIL-S-8879 MIL-PRF-46010 PennEngineering LUBRICANT NASM25027 NATIONAL AEROSPACE STANDARDS MIL-S-8879 A M5 self-locking nut 5052-H34
    Text: M I N I AT U R E S ELF-CLINCHING F ASTENERS MINIATURE SELFCLINCHING FASTENERS PEM brand miniature fasteners fit into a minimal space and provide strong, reusable threads. Types FE, FEO and UL are self-locking. Types FE and FEO meet locking torque requirements of NASM25027


    Original     		PDF NASM25027 NASM45938/7 CAGE-46384 NASM45938 NASM25027 MIL-S-8879 MIL-PRF-46010 PennEngineering LUBRICANT NASM25027 NATIONAL AEROSPACE STANDARDS MIL-S-8879 A M5 self-locking nut 5052-H34

    w2d 98

    Abstract: No abstract text available
    Text: COTS PEM SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit


    Original     		PDF AS5SP256K36DQ AS5SP256K36DQ w2d 98

    AS4DDR32M72PBG

    Abstract: Of83
    Text: i PEM 2.4G b SDRAM-DDR 2.4Gb Austin Semiconductor, Inc. AS4DDR32M72PBG 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS „ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps „ Package: „ 40% SPACE SAVINGS „ Reduced part count „ Reduced I/O count


    Original     		PDF AS4DDR32M72PBG 32Mx72 333Mbps AS4DDR32M72PBG Of83

    32M16

    Abstract: AS4DDR32M16 DDR250 DDR266B DDR333
    Text: CO TS PEM COTS SDRAM Austin Semiconductor, Inc. 8 Meg x 16 x 4 Banks AS4DDR32M16 PIN ASSIGNMENT Double Data Rate SDRAM COTS, Plastic Encapsulated Microcircuit Top View FIGURE 1: 66-Pin TSOP FEATURES • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/received with data,


    Original     		PDF AS4DDR32M16 66-Pin AS4DDR32M16DG-75/IT -40oC 105oC 32M16 AS4DDR32M16 DDR250 DDR266B DDR333

    Untitled

    Abstract: No abstract text available
    Text: COTS PEM SSRAM AS5SP256K36 BLOCK DIAGRAM OE\ ZZ CLK CE1\ CE2 I/O Gating and Control CE3\ BWE\ BWx\ CONTROL BLOCK GW\ ADV\ ADSC\ ADSP\ MODE A0-Ax AS5SP256K36 Rev. 2.1 09/11 BURST CNTL. Address Registers Row Decode Memory Array x36 SBP ❑ Synchronous Pipeline


    Original     		PDF AS5SP256K36 220mA 180mA 140mA 120mA 110mA 100mA 35oc/w 275mA 250mA

    Untitled

    Abstract: No abstract text available
    Text: COTS PEM SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit


    Original     		PDF AS5SP256K36DQ

    transistor w2d

    Abstract: ADV748
    Text: COTS PEM AS5SP1M18DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns ZZ CLK CE1\ I/O Gating and Control CE3\ BWx\ CONTROL BLOCK GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address


    Original     		PDF AS5SP1M18DQ 200Mhz 166Mhz 133Mhz MS026-D/BHA transistor w2d ADV748

    PEM SOS-632-8

    Abstract: SOS-440-10 7075-T6 aluminum sos-6440-4 SOS-832-16 SOS-632-12 SOS-440-12 BSOS-440-10 SO-440-6 SOS-440-8
    Text: S ELF-CLINCHING S TA N D O F F S SELF-CLINCHING STANDOFFS These standoffs, which use the proven self-clinching design, install with a squeeze in punched or drilled round holes – and become permanently mounted in the thin sheet. PEM brand standoffs are installed with their heads flush with one surface


    Original     		PDF SO-12 1-800-DIAL-PEM CAGE-46384 PEM SOS-632-8 SOS-440-10 7075-T6 aluminum sos-6440-4 SOS-832-16 SOS-632-12 SOS-440-12 BSOS-440-10 SO-440-6 SOS-440-8

    Untitled

    Abstract: No abstract text available
    Text: PEM Series C H A S S IS M O U N T , MULTI-STAGE EMI/RFI LINE FILTER MECHANICAL D IM E N S IO N S Unit: mm TO @ ^ C€ FEATURES The PEM series offers wide variety of high performance EMI filters in numerous packages. This series offers a variety of circuit types with multiple stages of filtration over a


    OCR Scan     		PDF 30MHz. 115/250VAC PEM20Q-8-GC3