galvanized steel thermal conductivity
Abstract: EC-2216 DOD-A-82720 MIL-A-82720 Oakite EC-1945 ec 2216 EC-3901 Aluminum alloys physical properties D2240
Text: 3 Scotch-Weld TM Epoxy Adhesive 2216 B/A Gray • 2216 B/A Tan NS • 2216 B/A Translucent Technical Data March, 2002 Product Description 3MTM Scotch-WeldTM Epoxy Adhesive 2216 B/A Gray, Tan NS and Translucent are flexible, two-part, room temperature curing epoxies with high peel and shear strengths.
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MIL-A-82720
DOD-A-82720.
220-7E-01
galvanized steel thermal conductivity
EC-2216
DOD-A-82720
Oakite
EC-1945
ec 2216
EC-3901
Aluminum alloys physical properties
D2240
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R220
Abstract: 1R00 R050 R500
Text: CYNTEC CO., LTD. 乾坤科技股份有限公司 DOCUMENT : RLN6A0000 REVISION PAGE : A0 : 1 OF 9 2/3W 2532 LOW RESISTNACE CHIP RESISTOR 1. Scope This specification applies to 2.5mm x 3.1mm size 2/3W, fixed metal film low resistance value chip resistors rectangular type.
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RLN6A0000
R220
1R00
R050
R500
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DOD-A-82720
Abstract: FR4 epoxy dielectric constant 4.2 DP-190 DP-100 Plus DP270 DP460 DP-420 3M DP100
Text: 0362220 Epoxy-Hotmelt 3/30/04 11:29 AM Page 1 High-performance adhesives for demanding electronics applications. With the ever-increasing sophistication of electronics, you need the most dependable and versatile methods for their fabrication and assembly. 3M Scotch-Weld epoxies and Jet-melt
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DP-100
DP-125
DP-190
DP-270
DP-420
DP-460
DOD-A-82720
FR4 epoxy dielectric constant 4.2
DP-100 Plus
DP270
DP460
3M DP100
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EPCOS EMI FILTER 220 V 3 A
Abstract: J-STD-020D CA04F2FT5AUD010G
Text: Ceramic transient voltage suppressors SMD multilayer transient voltage suppressors, ESD/EMI filters Series/Type: B72862F1050S160 Date: January 2009 EPCOS AG 2009. Reproduction, publication and dissemination of this publication, enclosures hereto and the
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B72862F1050S160
EPCOS EMI FILTER 220 V 3 A
J-STD-020D
CA04F2FT5AUD010G
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iso 7637 pulse 5
Abstract: varistors smd k30a Varistor cu3225 CU4032K30 EPCOS EMI FILTER 220 V 3 A Varistor 4032 B72650M1140K072 CU3225K14AUTOG2 CU3225K17AUTOG2
Text: Ceramic transient voltage suppressors SMD disk varistors for automotive applications Series/Type: Date: August 2008 EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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330-mm
iso 7637 pulse 5
varistors smd
k30a
Varistor cu3225
CU4032K30
EPCOS EMI FILTER 220 V 3 A
Varistor 4032
B72650M1140K072
CU3225K14AUTOG2
CU3225K17AUTOG2
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s95A
Abstract: B72660M0600S172 B72660M0950S172 CU4032S60AG2 CU4032S95AG2 J-STD-020D
Text: Ceramic transient voltage suppressors SMD disk varistors for telecom applications Series/Type: Date: August 2008 EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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330-mm
s95A
B72660M0600S172
B72660M0950S172
CU4032S60AG2
CU4032S95AG2
J-STD-020D
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Untitled
Abstract: No abstract text available
Text: CTVS Ceramic transient voltage suppressors SMD multilayer varistors MLVs , low clamping voltage series Series/Type: Date: July 2014 EPCOS AG 2014. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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CU 4032 K 275 G2
Abstract: CT0402V90RFG CT0603V150RFG CT0402V150RFG CT0402V275RFG IEC-61000-4-2 1608WH 1003 B72500T7151V060
Text: Ceramic transient voltage suppressors SMD multilayer transient voltage suppressors, radio frequency series Series/Type: Date: August 2008 EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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CT1812S
Abstract: CT1812 transistor mj 4032 B72580T0600S172 B72580T0950S172 B72580T6111K072 B72580T6750K072 viscosity B7258 B72580-T6111-K072
Text: Ceramic transient voltage suppressors SMD multilayer transient voltage suppressors for telecom applications Series/Type: Date: August 2008 EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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CT0402S14AHSG
Abstract: B72762A8140S160 CA04P2S14THSG CA04P2V150THSG CA05P4S14THSG CA06P4V150THSG CT0402V150HSG CT0603L25HSG CT0603S14AHSG B72714A
Text: Ceramic transient voltage suppressors SMD multilayer transient voltage suppressors, high-speed series Series/Type: Date: August 2008 EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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allmax
Abstract: circuitos integrados memoria ram 6116 MC68HC705 manual circuitos integrados megamax-4g ee tools megamax-4g memorias ram RomMax puerto paralelo
Text: HERRAMIENTAS DE DESARROLLO COP8 El set de herramientas de desarrollo COP8 de National Semiconductor le permite soportar sus diseños a través de un amplia gama de productos de software y hardware. Usando estas herramientas, su aplicación puede ser diseñada, implementada compilada y ensamblada usando
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Abstract: No abstract text available
Text: Ceramic transient voltage suppressors SMD multilayer transient voltage suppressors, high-speed series Series/Type: Date: November 2012 EPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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Untitled
Abstract: No abstract text available
Text: Ceramic transient voltage suppressors SMD multilayer transient voltage suppressors, low capacitance series Series/Type: Date: November 2012 EPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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Sn62Pb36Ag2
Abstract: J-STD-020D
Text: Ceramic transient voltage suppressors SMD multilayer transient voltage suppressors, ESD/EMI filters Series/Type: B72862F1050S160 Date: November 2010 EPCOS AG 2010. Reproduction, publication and dissemination of this publication, enclosures hereto and the
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B72862F1050S160
Sn62Pb36Ag2
J-STD-020D
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CA04F2FT5AUD010
Abstract: CA04F2FT5AUD010G CA05F4RC5LCM270G
Text: Ceramic transient voltage suppressors SMD multilayer transient voltage suppressors, ESD/EMI filters Series/Type: Date: August 2008 The following products presented in this data sheet are being withdrawn. Ordering Code B72814R8050S162 B72814R1050S162 B72814R2050S162
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B72814R8050S162
B72814R1050S162
B72814R2050S162
B72814R3050S162
B72814R5050S162
B72814R7050S162
2009f
CA04F2FT5AUD010
CA04F2FT5AUD010G
CA05F4RC5LCM270G
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22CV10AP
Abstract: 22cv10 nte quick cross ict peel 18CV8J palce programmer schematic blackjack vhdl code PA7140J-20 INTEL PLD910 PALCE610
Text: Data Book General Information PEEL Arrays PEEL Devices Special Products and Services Development Tools Application Notes and Reports Package Information PLACE Users Manual_ Introduction to PLACE PLACE Installation Getting Started with PLACE Operation Reference Guide
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PEEL 253
Abstract: No abstract text available
Text: AMI PEEL 253 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL253 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power, reprogrammable,
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PEEL253
PEEL 253
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PEEL 253
Abstract: PEEL253
Text: AMI PEEL 253 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL253 is a CMOS Programmable Electrically Erasable Logic device that provides a high-performance, low-power, reprogrammable,
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PEEL253
PEEL 253
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82S153
Abstract: No abstract text available
Text: •AMI > g o u ld «Semiconductors CHIOS Programmable Electrically Erasable Logic Device PEEL 253 Features — PC-based software translates existing JEDEC files to PEEL253 format • Advanced CMOS E2PROM Technology • Architectural and Design Enhancements
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PEEL253
82S153
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL CMOS TECHNOLOGY, INC. Preliminary Data TM PA7040 PEEL Array CMOS Programmable Electrically Erasable Logic Array Features Flexible Architecture User-Configurable High Density Logic Array — — — — Create multi-level l/O-buried logic circuits
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PA7040
120mA
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Untitled
Abstract: No abstract text available
Text: •> GOULD AMI CMOS Programmable Electrically Erasable Logic Array Device Ptellmlaary Data • Semiconductors PEEL PA7040 General D escription User-Configurable High Density Logic Array • Create multi-level l/O-buried logic circuits • Over 120 sum-of-products functions
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PA7040
155mA
13ns/20ns
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ICT Peel
Abstract: SIGNETICS* 82S153 82S153
Text: GOULD SEMICONDUCTOR DIV D3E D J MDSSTlb DDIDMD? 4 4055916 GOULD SEMICONDUCTOR •»!■ n m ii n * U U U LU Electronics DIV 03E 10407 D CMOS Programmable Electrically Erasable Logic Device Preliminary Data Sheet T - M H 3 -H T 1 PEEL" 253 — PC-based software translates existing JED EC files
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PEEL253
ICT Peel
SIGNETICS* 82S153
82S153
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pin diagram and block diagram of 74ls74
Abstract: TTL 74LS74 Micron TLC 74ls74 timing setup hold pin DIAGRAM OF IC 74ls74
Text: nn.„ n r u u u lu AMI • Semiconductors CMOS Programmable Electrically Erasable Logic Amy Device Preliminary Data PEEL PA7040 General Description Features U ser-C o n fig u ra b le High D ensity Lo g ic A rray • • • • Create multi-level l/O-buried logic circuits
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PA7040
PA7040
PA7040s
pin diagram and block diagram of 74ls74
TTL 74LS74
Micron TLC
74ls74 timing setup hold
pin DIAGRAM OF IC 74ls74
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL253 CMOS Programmable Electrically Erasable Logic Device Features • ADVANCED CMOS EEPROM TECHNOLOGY ■ FPLA ARCHITECTURE ■ COMPATIBLE PERFORMANCE — tpD = 30ns max, to E = 30ns max SUPERSET REPLACEMENT FOR PLS153
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PEEL253
PLS153
terms/10
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