C707 10m006
Abstract: 358 ez 902 sim c707 C707 10M006 049 2 C707 C707D pci ped 358 ez 802 C707 10M006 537 2 C707 10M006 001 0
Text: Amphenol Amphenol-Tuchel Electronics GmbH Smart Card Connectors Series C700 www.smart-card-connector.info Our project competence for your innovative solutions Amphenol's development strategy is to partner with customers early in their development process. We bring a high level expertise
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Engineerin00
D-74080
C707 10m006
358 ez 902
sim c707
C707 10M006 049 2
C707
C707D
pci ped
358 ez 802
C707 10M006 537 2
C707 10M006 001 0
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C702 10M008 925 4
Abstract: C707 10m006 358 ez 902 C702 10M008 230 40 C707 10M006 001 0 amphenol simlock C707 10M006 537 2 Smart Card Connector C707A Amphenol-Tuchel snap on tools for electronic
Text: Amphenol Amphenol-Tuchel Electronics GmbH Smart Card Connectors Series C700 www.smart-card-connector.info Our project competence for your innovative solutions Amphenol's development strategy is to partner with customers early in their development process. We bring a high level expertise
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D-74080
C702 10M008 925 4
C707 10m006
358 ez 902
C702 10M008 230 40
C707 10M006 001 0
amphenol simlock
C707 10M006 537 2
Smart Card Connector C707A
Amphenol-Tuchel
snap on tools for electronic
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9RV3
Abstract: No abstract text available
Text: DS-VA-GT1000-eng August , 2014 Data Sheet Glass Tube Flowmeter Model GT1000 Model GT1020 Model GT1024 Variable Area Industrial Glass Tube, Variable Area Flowmeters Description The Brooks GT 1000 combines ruggedness and simplicity in design to provide a versatile
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DS-VA-GT1000-eng
GT1000
GT1020
GT1024
9RV3
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20VA
Abstract: PED Limited DC220V PED Newmarket
Text: C [ i) ¿/f5"5/ ^ 77 S l] i[nl@D(ol! Series 43 PED Lim ited D escrip tio n These robust solenoids are suitable for heavy-duty applications. They offer a very high force/size ratio. These solenoids are available in both pull and thrust versions. Force/stroke curves
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-1500V
DW/10/87/1000
20VA
PED Limited
DC220V
PED Newmarket
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Untitled
Abstract: No abstract text available
Text: STP60NS04Z N - CHANNEL CLAMPED 10m£2 - 60A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP60N S04Z V R d S o ii Id <0.015 Q. 60 A dss CLAM PED . TYPICAL Ros(on) =0.010 Î2 . 100% AVALANCHE TESTED . LOW CAPACITANCE AND GATE CHARGE . 175 °C MAXIMUM JUNCTION
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STP60NS04Z
O-220
STP60N
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Untitled
Abstract: No abstract text available
Text: STP80NS04Z N - CHANNEL CLAMPED 7.5mG - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP 80N S04Z V dss R d S o ii Id CLAM PED <0.008 Q. 80 A . TYPICAL RDs(on) = 0.0075 £2 . 100% AVALANCHE TESTED . LOW CAPACITANCE AND GATE CHARGE . 175 °C MAXIMUM JUNCTION
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STP80NS04Z
O-220
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Untitled
Abstract: No abstract text available
Text: STP60NS04Z N - CHANNEL CLAMPED 10m ^ - 60A - T0-220 FULLY PROTECTED MESH OVERLAY MOSFET PRELIMINARY DATA TYPE STP60N S04Z V dss R dS oii Id CLAM PED < 0 .0 1 5 Q. 60 A . . TYPICAL RDS(on) =0.010 £2 100% AVALANCHE TESTED . LOW CAPACITANCE AND GATE CHARGE
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STP60NS04Z
T0-220
STP60N
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Untitled
Abstract: No abstract text available
Text: STP80NS04Z N - CHANNEL CLAMPED 7.5mQ - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE STP80N S04Z . . . . V ds s RDS on Id CLAM PED < 0 .0 0 8 Q 80 A TYPICAL RDS(on) = 0.0075 Î2 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 °C MAXIMUM JUNCTION
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STP80NS04Z
O-220
STP80N
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transistor BUZ20
Abstract: BUZ20
Text: fZ T SGS-THOMSON HD g(^ (ilL(i(g'ir»M(gi B U Z20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D S(on BUZ20 100 V 0.2 ß 12 A • 100 VOLTS - FOR UPS AP PLICATIO NS • ULTRA FAST SW ITCHING • RATED FOR UNCLAM PED INDUCTIVE SW ITCHING (ENERGY TEST) ♦
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BUZ20
00A//xS
transistor BUZ20
BUZ20
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SLRS007B
Abstract: SGSL293
Text: SN754410 QUADRUPLE HALF-H DRIVER I SLRS007B - NOVEMBER 1986 - REVISED NOVEMBER 1995 1-A Output-Current Capability Per Driver Applications Include Half-H and Full-H Solenoid Drivers and Motor Drivers Designed for Positive-Supply Applications Wide Supply-Vottage Range of 4.5 V to 36 V
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SN754410
SGSL293
SLRS007B
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2SK812
Abstract: 2sk8
Text: NEC F n -c h a n n e l m o s f ie l d e ffe c t p o w e r t r a n s is t o r ELECTRON DEVICE DESCRIPTION Ï 5 Ï The 2SK812 is N-Channel MOS Field E ffect Power Transistor designed fo r solenoid, m otor and lamp driver. FEATURES • b 412 S K . 8 1 2 PACKAGE D IM EN SIO N S
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2SK812
2SK812
1987M
2sk8
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PED Engineering
Abstract: PED Newmarket 57 PED Newmarket BLP components 5W solenoid PED solenoid
Text: — Solenoids n > / Series 67 Latching Solenoid GENERAL DESCRIPTION DC pulse operated Magnet maintained for zero power consumption Ideal for low energy applications i.e. dry cells -5 °C to +75°C PE BLP COMPONENTS LTD. FORCE/STROKE CURVE Fig 1. ON TIME - Sec
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1028BS
Abstract: 1028B
Text: TOSHIBA T EN T A TIV E TPD1028BS TO SH IB A IN TELLIG EN T PO W ER D EV ICE SILICON M O N O LITH IC PO W ER M OS IC TPD1028BS LOW-SIDE SWITCH FOR MOTOR, SOLENOID AND LAMP DRIVE TPD 1028BS is a m o n o lith ic p o w e r IC fo r low -side sw itch. T h e IC has a vertical M O SFET o u tp u t w h ich can be directly
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TPD1028BS
1028BS
1028B
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PED relay
Abstract: belling lee P.E.D. relay ped relays
Text: Introduction BLP Com ponents and Dialight design, develop and manufacture a w ide range o f electrical and electronic products for diverse markets - industrial, defence, commercial and domestic. The company's activities are supported by extensive in-house'
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BS9000
PED relay
belling lee
P.E.D. relay
ped relays
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sgsp301
Abstract: No abstract text available
Text: Æ 7 SGS-THOM SON SGSP301 R jflO M [l[UI TrM O gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS(on Id SGSP301 100 V 1.4 n 2.0 A • HIGH SPEED SW ITCHING APPLICATIO NS • G EN E R AL PURPOSE APPLICATIO NS • ULTR A FAST SW ITCHING
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SGSP301
25OyA
sgsp301
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sp222
Abstract: SGS-P222
Text: r = 7 ^ 7 # S C S -T H O M S O N » » ilL iO T C M Ig S SG SP222 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D S on fD SGSP222 50 V 0.13 Í2 10 A • HIGH SPEED SW ITCHING APPLICATIO NS • ULTR A FAST SW ITCHING • EASY DRIVE FOR REDUCED COST AND SIZE
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SP222
SGSP222
OT-82
T-194
sp222
SGS-P222
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SGSP201
Abstract: SGS-THOMSON 435
Text: r i 7 SGS-THOMSON ^ 7 # MtgœiLIÊTrœiOÊS SGSP201 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS SGSP201 100 V ^DS on 1.4 fi Id 2.0 A • HIGH SPEED SW ITCHING APPLICATIO NS • ULTRA FAST SW ITCHING • EASY DRIVE FOR REDUCED COST AND SIZE
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SGSP201
T-194
SGSP201
SGS-THOMSON 435
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Str 5654
Abstract: M/5607 1/str 5607
Text: Subminiature D Connectors DIN 41 652 • IEC 807 Certified according to DIN EN ISO 9001 in design/development, production, installation and servicing D-Sub Series Connectors Solder Buckets 3 Str<îig h t Solder ins W rap posts straight press-in Crimp Contact
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NL-5203
P-1000
N-0667
MO/16
ZA-2011
Str 5654
M/5607
1/str 5607
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Untitled
Abstract: No abstract text available
Text: Hormis S RFD3N08L, RFD3N08LSM Semiconductor y 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs juiy 1998 Features Description • 3A, 80V • UIS Rating Curve The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors
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RFD3N08L,
RFD3N08LSM
RFD3N08L
RFD3N08LSM
19e-4
55e-2
58e-5)
19e-3
12e-6)
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MJH16018
Abstract: baker e4 MTPSP10 P6302 a626 AM503 bt 109 transistor K1118 MJ16018 MTP8P10
Text: MOTORGLA SC XSTRS/R F 12E D I t»3b?E5M []GaS227 1 | 7 ^ 3 3 - / S ' ' MOTOROLA r - 3 3 -/ 3 SEMICONDUCTOR TECHNICAL DATA M J16018 MJH16018 Designer's Data Sheet NPN Silicon Pow er Transistors 1.5 k V Sw itch m ode III Series These transistors are designed for high-voltage, high-speed, power switching in induc
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I6S98SC
MJ16018
O-218AC
MJH16018
MJH16018
baker e4
MTPSP10
P6302
a626
AM503
bt 109 transistor
K1118
MJ16018
MTP8P10
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BUT14
Abstract: SAF 1092 2sc 3402 transistor HN 554 transistor 100-C 3399 transistor motorola darlington power transistor TRANSISTOR 2SC 635
Text: MOTOROLA SC XSTRS/R F la E D | 33t3755 M OOflMaM1! fa | MOTOROLA S E M IC O N D U C T O R BUT14 TECHNICAL DATA 25 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 850 VOLTS
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33t3755M
BUT14
BUT14
SAF 1092
2sc 3402 transistor
HN 554 transistor
100-C
3399 transistor
motorola darlington power transistor
TRANSISTOR 2SC 635
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TT220
Abstract: No abstract text available
Text: SGS-THOMSON * J f m[*IMmi gTO(oM][](g§ STHI07N50 STHI07N50FI HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT PRELIMINARY DATA TYPE V DSS STHI07N50 STHI07N50FI 500 V 500 V 7 A 7 A • HIGH INPUT IMPEDANCE • LOW O N-VOLTAGE • HIGH CURRENT C APABILITY
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STHI07N50
STHI07N50FI
ATT220
500ms
TT220
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BUT35
Abstract: transistors but35 CM4050
Text: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS
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b3L75S4
T-35-1?
BUT35
BUT35
transistors but35
CM4050
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BUT35
Abstract: THT bsc 25 transistors but35 ASX 12 D transistor CM4050
Text: MO T O R O L A SC XST RS /R 12E D I b3b75S4 DDaMflbfl T | F MOTOROLA SEM ICON DUCTOR TECHNICAL DATA 40 AMPERES NPN SILICON POW ER DARLINGTON TRAN SISTO RS SW ITCHM ODE SER IES NPN SILICON POW ER DARLINGTON TRAN SISTO RS WITH BASE-EM ITTER SPEEDU P DIODE 1000 VOLTS
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b3b75S4
BUT35
BUT35
THT bsc 25
transistors but35
ASX 12 D transistor
CM4050
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