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    PDTC* MARKING CODE Search Results

    PDTC* MARKING CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    PDTC* MARKING CODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING Y1 TRANSISTOR

    Abstract: Y2 marking HJ2584 Y2MARKING PDTC* MARKING CODE
    Text: HI-SINCERITY Spec. No. : HJ200204 Issued Date : 1998.04.08 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ2584 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ2584 is designed for use in low voltage and low drop out regulator applications.


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    PDF HJ200204 HJ2584 HJ2584 O-252 183oC 217oC 260oC MARKING Y1 TRANSISTOR Y2 marking Y2MARKING PDTC* MARKING CODE

    HJ10387

    Abstract: A1 marking code amplifier Y2 MARKING HE6028
    Text: HI-SINCERITY Spec. No. : HE6028 Issued Date : 1997.06.24 Revised Date : 2005.07.14 Page No. : 1/5 MICROELECTRONICS CORP. HJ10387 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ10387 is designed for general purpose amplifier and low speed switching applications.


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    PDF HE6028 HJ10387 HJ10387 O-252 200oC 183oC 217oC 260oC 245oC A1 marking code amplifier Y2 MARKING HE6028

    Untitled

    Abstract: No abstract text available
    Text: PD - 94919 IRG4BC10SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low voltage drop; 1.1V typical at 2A • S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in


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    PDF IRG4BC10SPbF O-220AB O-220AB 10NTROLLING O-220AB.

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


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    PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    hitachi j50

    Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
    Text: CONTENTS Index . 5 General Information . 9


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    PDF D-85622 hitachi j50 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent

    t416

    Abstract: 817 CN
    Text: DISCRETE SEMICONDUCTORS PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE


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    PDF PDTC114YE PDTC114YE 5002/00/03/pp8 t416 817 CN

    114ET

    Abstract: PDTA114E PDTC114E
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Nov 26 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ET FEATURES • Built-in bias resistors R1 and R2


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    PDF PDTC114ET MAM097 PDTA114ET. 115002/00/07/pp8 114ET PDTA114E PDTC114E

    AN 6752

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Objective specification Supersedes data of 1998 May 18 Philips Sem iconductors 1999 Apr 13 PHILIPS Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTA114TT FEATURES • Built-in bias resistor R1 typ. 10k£2


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    PDF PDTA114TT MAM286 114TT. 115002/00/03/pp8 AN 6752