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    PD57002 EQUIVALENT Search Results

    PD57002 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FM82DUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D Visit Toshiba Electronic Devices & Storage Corporation

    PD57002 EQUIVALENT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BTS 132 SMD

    Abstract: AN1294 J-STD-020B PD57002-E PD57002S-E
    Text: PD57002-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package Description


    Original     		PD57002-E PowerSO-10RF PowerSO-10 BTS 132 SMD AN1294 J-STD-020B PD57002-E PD57002S-E PDF

    BTS 132 SMD

    Abstract: J-STD-020B PD57002-E PD57002S-E AN1294
    Text: PD57002-E PD57002S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package Description


    Original     		PD57002-E PD57002S-E PowerSO-10RF PowerSO-10 BTS 132 SMD J-STD-020B PD57002-E PD57002S-E AN1294 PDF

    STEVAL-TDR007V1

    Abstract: PD57018 PD57002-E PD57018-E PD57060-E
    Text: STEVAL-TDR007V1 3 stage RF power amplifier demonstration board using: PD57002-E, PD57018-E, 2 x PD57060-E Features • N-channel enhancement-mode lateral MOSFETs ■ Excellent thermal stability ■ Frequency: 1030 MHz ■ Supply voltage: 36 V ■ Peak power: 200 W typical


    Original     		STEVAL-TDR007V1 PD57002-E, PD57018-E, PD57060-E STEVAL-TDR007V1 PD57002-E PD57018-E PD57018 PD57002-E PD57018-E PD57060-E PDF

    PD57002-E

    Abstract: BTS 132 SMD PD57002S PD57002S-E AN1294 JESD97 PD57002
    Text: PD57002-E PD57002S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 2W with 15dB gain @ 960MHz / 28V ■ New RF plastic package


    Original     		PD57002-E PD57002S-E 960MHz PowerSO-10RF PD57002 PowerSO-10 PD57002-E BTS 132 SMD PD57002S PD57002S-E AN1294 JESD97 PDF

    BTS 132 SMD

    Abstract: No abstract text available
    Text: PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package


    Original     		PD57002-E PowerSO-10 BTS 132 SMD PDF

    PD57002-E

    Abstract: PD57018-E PD57060-E JESD97 STEVAL-TDR007V1 1030 mhz STEVAL-TDR00
    Text: STEVAL-TDR007V1 3 stages RF power amplifier demonstration board using: PD57002-E, PD57018-E, 2 x PD57060-E Features • N-channel enhancement-mode lateral MOSFETs ■ Excellent thermal stability ■ Frequency: 1030 MHz ■ Supply voltage: 36 V ■ Peak power: 200 W typical


    Original     		STEVAL-TDR007V1 PD57002-E, PD57018-E, PD57060-E STEVAL-TDR007V1 PD57002-E PD57018-E AB-2x57060-1030 PD57002-E PD57018-E PD57060-E JESD97 1030 mhz STEVAL-TDR00 PDF

    PD57018-E

    Abstract: PD57060-E JESD97 PD57002-E STEVAL-TDR007V1 STEVAL-TDR00 AB-2x57060-1030
    Text: STEVAL-TDR007V1 3 stages RF power amplifier demonstration board using: PD57002-E, PD57018-E, 2 x PD57060-E Features • N-channel enhancement-mode lateral MOSFETs ■ Excellent thermal stability ■ Frequency: 1030 MHz ■ Supply voltage: 36 V ■ Peak power: 200 W typical


    Original     		STEVAL-TDR007V1 PD57002-E, PD57018-E, PD57060-E STEVAL-TDR007V1 PD57002-E PD57018-E AB-2x57060-1030 PD57018-E PD57060-E JESD97 PD57002-E STEVAL-TDR00 PDF

    SO42

    Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
    Text: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002


    Original     		PowerSO-10RF PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002 PD57006 PD57018 SO42 STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier PDF

    SD57045

    Abstract: pb97 PD57045S AN1294 GSM1800 GSM900 IS-54 MO-184 PCS1900 PowerSO-10RF
    Text: AN1294 APPLICATION NOTE PowerSO-10RF: THE FIRST TRUE RF POWER SMD PACKAGE S. Juhel - N. Hamelin 1. ABSTRACT During the last 10 years, as the size of electronic assemblies decreased and their reliability increased, there has been a need across the board for various components which have to be surface mounted.


    Original     		AN1294 PowerSO-10RF: PowerSO-10RF SD57045 pb97 PD57045S AN1294 GSM1800 GSM900 IS-54 MO-184 PCS1900 PDF

    pb97

    Abstract: SD57045 MO-184 PD57045S similar at PD57006 AN1294 GSM1800 GSM900 IS-54 PCS1900
    Text: AN1294 APPLICATION NOTE PowerSO-10RF: THE FIRST TRUE RF POWER SMD PACKAGE S. Juhel - N. Hamelin 1. ABSTRACT During the last 10 years, as the size of electronic assemblies decreased and their reliability increased, there has been a need across the board for various components which have to be surface mounted.


    Original     		AN1294 PowerSO-10RF: PowerSO-10RF pb97 SD57045 MO-184 PD57045S similar at PD57006 AN1294 GSM1800 GSM900 IS-54 PCS1900 PDF

    pb97

    Abstract: SD57045 MO-184 similar at PD57006 PD57045S AN1294 GSM1800 GSM900 IS-54 PCS1900
    Text: AN1294 APPLICATION NOTE PowerSO-10RF: THE FIRST TRUE RF POWER SMD PACKAGE S. Juhel - N. Hamelin 1. ABSTRACT During the last 10 years, as the size of electronic assemblies decreased and their reliability increased, there has been a need across the board for various components which have to be surface mounted.


    Original     		AN1294 PowerSO-10RF: PowerSO-10RF pb97 SD57045 MO-184 similar at PD57006 PD57045S AN1294 GSM1800 GSM900 IS-54 PCS1900 PDF